Datasheet TDA8000T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA8000; TDA8000T

Smart card interface

Product specification
Supersedes data of 1995 Feb 01
File under Integrated Circuits, IC02

1996 Dec 12

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

FEATURES

• Two protected I/O lines

• VCC regulation (5 V ±4%, 100 mA max. with controlled

rise and fall times)

• VPP generation (12.5, 15 or 21 V ±2.5%, 50 mA max.

APPLICATIONS

• Pay TV

• Telematics

• Cashless payment

• Multipurpose card-readers, etc.

programmable by two bits, with controlled rise and fall
times)

• Clock generation (up to 8 MHz)

• Short-circuit, thermal and card extraction protections

• Two voltage supervisors (digital and analog supplies)

• Automatic activation and deactivation sequences via an

independent internal clock

• Enhanced ESD protections on card connections
(4 kV min.)

• ISO 7816 approval.

GENERAL DESCRIPTION

The TDA8000 is a complete, low-cost analog interface
which can be positioned between a smart card or a
memory card (ISO 7816) and a microcontroller. It is
approved for banking, telecom and pay TV applications.

The complete supply, protection and control functions are
realized with only a few external components, which
makes the TDA8000 very attractive for consumer
applications. Application suggestions and support is
available on request (see examples in
Chapter “Application information”).

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD

I

DD

supply voltage 6.7 − 18 V
supply current idle mode; VDD=12V − 25 − mA

active modes; unloaded − 32 − mA

V

th2

V

CC

I

CC

V

H

I

PP

, t

t

de

act

threshold voltage on V

SUP

card supply voltage 4.8 5.0 5.2 V
card supply current −−−100 mA
high voltage supply for V

PP

programming current read mode; VPP=5V −−−50 mA

write mode; V

>5V −−−50 mA

PP

deactivation/activation cycle

4.5 − 4.68 V

−−30 V

−−500 µs

duration

P

tot

continuous total power
dissipation

TDA8000; T
see Fig.10

TDA8000T; T

amb

amb

= +70 °C;

= +70 °C;

−−2W

−−0.92 W

see Fig.11

T

amb

operating ambient temperature 0 − +70 °C

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TDA8000 DIP28 plastic dual in-line package; 28 leads (600 mil) SOT117-1
TDA8000T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1

1996 Dec 12 2

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

BLOCK DIAGRAM

handbook, full pagewidth

ALARM
ALARM

I/O1(µC)
I/O2(µC)

RSTIN

OFF

START

WRITE

CLKDIV

CLKOUT

17
18

28
27

26

19

20

21

23
25

AND

ENABLE

V

DD

MAIN

SUPPLY

V

SUP

SUPERVISOR

DELAY

15 16 13 12

VOLTAGE

PROTECTIONS

TDA8000

LOGIC

PROTECTIONS

INTERNAL

CLOCK

CLOCK

CIRCUITRY

GENERATOR

ENABLE

V

CC

CLOCK

GND

22

CVNC

3

I/O1

2

I/O2

4

RST

9

PRES

8

PRES

14

V

CC

5

CLK

PSEL1

PSEL2

6
7

OSCILLATOR

124 11

XTAL

CLKIN

Fig.1 Block diagram.

1996 Dec 12 3

V

PP

GENERATOR

V

H

10

MBH810

V

PP

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

PINNING

SYMBOL PIN DESCRIPTION

XTAL 1 crystal connection
I/O2 2 data line to/from the card
I/O1 3 data line to/from the card
RST 4 card reset output
CLK 5 clock output to the card
PSEL1 6 programming voltage selection input (see Table 1)
PSEL2 7 programming voltage selection input (see Table 1)
PRES 8 card presence contact input (active LOW)
PRES 9 card presence contact input (active HIGH)
V

PP

V

H

10 card programming voltage output

11 high voltage supply for VPP generation
GND 12 ground
V
V
V

DD
CC
SUP

13 positive supply voltage

14 card supply output voltage

15 voltage supervisor input
DELAY 16 external capacitor connection for delayed reset timing
ALARM 17 open-collector reset output for the microcontroller (active

HIGH)

ALARM 18 open-collector reset output for the microcontroller (active

LOW)
OFF 19 interrupt output to the microcontroller (active LOW)
START 20 microcontroller input for starting session (active LOW)
WRITE 21 control input for applying programming voltage to the card

(active LOW)
CVNC 22 internally generated 5 V reference, present when V

DD

is

on; to be decoupled externally (47 nF)
CLKDIV 23 input for dividing/not dividing the CLKOUT frequency by

two (active LOW)
CLKIN 24 external clock signal input
CLKOUT 25 clock output to the microcontroller, or another TDA8000
RSTIN 26 card reset input from the microcontroller (active HIGH)
I/O2(µC) 27 data line to/from the microcontroller; must not be left

open-circuit, tie to CVNC if not used
I/O1(µC) 28 data line to/from the microcontroller; must not be left

open-circuit, tie to CVNC if not used

page

XTAL

I/O2

I/O1
RST
CLK

PSEL1

PSEL2

PRES
PRES

V

PP

V

GND

V

DD

V

CC

H

1
2
3
4
5
6
7

TDA8000T

8

9
10
11
12
13
14

TDA8000

Fig.2 Pin configuration.

MBH809

28
27
26
25
24
23
22
21
20
19
18
17
16
15

I/O1(µC)
I/O2(µC)
RSTIN
CLKOUT
CLKIN
CLKDIV
CVNC

WRITE
START
OFF
ALARM
ALARM
DELAY

V

SUP

1996 Dec 12 4

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

FUNCTIONAL DESCRIPTION
Power supply

The circuit operates within a supply voltage range of

6.7 to 18 V. V

and GND are the supply pins. All card

DD

contacts remain inactive during power-up or power-down,
provided VDD does not rise or fall too fast (0.5 V/ms typ.).

P

OWER-UP

The logic part is powered first and is in the reset condition
until VDD reaches V
reaches V

OWER-DOWN

P

th4+Vhys4

When VDD falls below V

. The sequencer is blocked until V

th1

.

, an automatic deactivation of

th4

DD

the contacts is performed.

Voltage supervisor

This block surveys the 5 V supply of the microcontroller

) in order to deliver a defined reset pulse and to avoid

(V

SUP

any transients on card contacts during power-up or
power-down of V

SUP

.

The voltage supervisor remains active even if VDD is
powered-down.

OWER-UP

P
As long as V

is below V

SUP

th2+Vhys2

the capacitor C

DEL

connected to the pin DELAY, will be discharged. When
V

rises to the threshold level, C

SUP

will be recharged.

DEL

ALARM and ALARM remain active, and the sequencer is
blocked until the voltage on the pin DELAY reaches V

OWER-DOWN (see Fig.3)

P
If V

falls below V

SUP

th2

, C

will be discharged, ALARM

DEL

th3

andALARM become active, and an automatic deactivation
of the contacts is performed.

Clock circuitry (see Fig.4)
The clock signal (CLK) can be applied to the card by two

different methods:

1. Generation by a crystal oscillator: the crystal
(3 to 11 MHz) is connected to pin XTAL. Its frequency
is divided by two.

2. Use of a signal frequency already present in the
system and connected to the pin CLKIN (up to 8 MHz).
Pin XTAL has to be connected to GND via a 1 kΩ
resistor. In this event, the CLKOUT signal remains
LOW.

In both events the signal is buffered and enabled.
Pin CLKOUT may be used to clock a microcontroller.

The signal (

1

⁄2f

or f

xtal

if CLKDIV is HIGH) is available

xtal

when the circuit is powered up.

State diagram

Once activated, the circuit has six possible modes of
operation:

• Idle

• Activation

• Read

• Write

• Deactivation

• Fault.

Figure 5 shows how these modes are accessible.

DLE MODE

I
After reset, the circuit enters the IDLE state. A minimum

number of circuits are active while waiting for the
microcontroller to start a session:

• All card contacts are inactive

• Voltage generators are stopped

• Oscillator is running, providing CLKOUT

• Voltage supervisor is active

,

• Pins I/O1(µC) and I/O2(µC) are high impedance.
The OFF line is HIGH if a card is present (PRES and

PRES active) and LOW if a card is not present.

.

CTIVATION SEQUENCE

A
From the IDLE mode, the circuit enters the ACTIVATION

mode when the microcontroller sets the START line
(active LOW). The I/O(µC) signals must not be LOW.
The internal circuitry is activated, the internal clock starts
and the following ISO 7816 sequence is performed:

1. VCC rises from 0 to 5 V

2. I/Os are enabled

3. VPP rises from 0 to 5 V

4. No change

5. CLK is enabled

6. RST is enabled.
The typical time interval between two steps is 32 µs for the

first two steps and 64 µs for the other three. Timing is
derived from the internal clock (see Fig.6).

1996 Dec 12 5

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

Between steps 3 and 5, a HIGH level on pin RSTIN allows
the CLK signal to be applied to the card. This feature
facilitates a precise count of CLK periods while waiting for
the card to respond to a reset.

After step 5, RSTIN has no further action on CLK.
After step 6, RST is set to the complementary value of

RSTIN.

EAD MODE

R
When the activation sequence is completed and, after the

card has replied to its Answer-to-Reset, theTDA8000
enters the READ mode. Data is exchanged between the
card and the microcontroller via the I/O lines.

When it is required to write to the internal memory of the
card, the circuit is set to the WRITE mode by the
microcontroller.

Cards with EPROM memory require a programming
voltage (V

GENERATION

V

PP

PP

).

The circuit supports cards with VPP of 12.5, 15 or 21 V.
The selection of P is achieved by PSEL1 and PSEL2
according to Table 1.

DEACTIVATION SEQUENCE (see Fig.8)
When the session is completed, the microcontroller sets

the START line to its HIGH state.
The circuit then executes an automatic deactivation

sequence by counting back the sequencer:

1. Card reset (RST falls to LOW)

2. CLK is stopped

3. No change

4. VPP falls to 0 V

5. I/O1(µC) and I/O2(µC) become high impedance

6. V

falls to 0 V.

CC

The circuit returns to the IDLE mode on the next rising
edge of the sequencer clock.

P

ROTECTIONS

Main fault conditions are monitored by the circuit:

• Short-circuit on V

• Short-circuit on V

CC
PP

• Over current on I/Os

• Card extraction during transaction

• Overheating problem.

Table 1 Card programming voltage selection

PSEL1 PSEL2

PROGRAMMING

VOLTAGE P

LOW LOW 5

LOW HIGH 12.5
HIGH LOW 15
HIGH HIGH 21

In order to respect the ISO7816 slopes, the circuit
generates V

by charging and discharging an internal

PP

capacitor. The voltage on this capacitor is then amplified
by a power stage gain of 5, powered via an external supply

[30 V (max.)].

pin V

H

RITE MODE (see Fig.7)

W
When the microcontroller sets the WRITE line (active

LOW), the circuit enters the WRITE mode. VPP rises from
5 V to the selected value with a typical slew rate of 1 V/µs.
When the write operation is completed, the microcontroller
returns the WRITE line to its HIGH state, and VPP falls
back to 5 V with the same slew rate.

When one of these fault conditions is detected, the circuit
pulls the interrupt line OFF to its active LOW state and
returns to the FAULT mode.

AULT MODE (see Fig.9)

F
When a fault condition is written to the microcontroller via

the OFF line, the circuit initiates a deactivation sequence.
After the deactivation sequence has been completed, the

OFF line is reset to its HIGH state when the microcontroller
has reset the START line HIGH, except if the fault
condition was due to a card extraction.

Note

The two other causes of emergency deactivation (Power
failure detected on V

DD

or V

) do not act upon OFF.

SUP

WRITE has no action outside a session.

1996 Dec 12 6

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

handbook, full pagewidth

V

V

DELAY

ALARM

handbook, full pagewidth

SUP

Fig.3 ALARM and DELAY as a function of V

CLKOUT

÷ 2

V

+ V

th2

hys2

V

th2

V

th3

t

d

MGG818

(C

SUP

fixes the pulse width).

DEL



ENABLE

ENCLK

CLK

handbook, full pagewidth

CLKDIV

INPUT

IDLE

OSC INPUT

XTAL CLKIN

Fig.4 Clock circuitry.

ACTIVATION

FAULT READWRITEPDOWN

DEACTIVATION

Fig.5 State diagram.

MGG819

MGG820

1996 Dec 12 7

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

handbook, full pagewidth

INTERNAL CLOCK

SEQUENCER CLOCK

ENABLE RESET

PRES

OFF

START

V

CC

I/O

V

PP

CLK

RSTIN

RST

INTERNAL

t

act

t

d(clk)

t

3

123 4 5 6

t

5

Fig.6 Activation sequence.

t

RST

MGG821

handbook, full pagewidth

START (LOW)

VCC (+5 V)

WRITE

(P)

(+5 V)

VPP (0 V)

CLK

RST (HIGH)

Fig.7 Read/Write; Read mode.

1996 Dec 12 8

MGG822

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

t

handbook, full pagewidth

OFF (HIGH)

INTERNAL CLOCK

SEQUENCER CLOCK

ENABLE RESET

START

V

CC

I/O

VPP (+5 V)

CLK

RESET-IN

RST

INTERNAL

de

handbook, full pagewidth

INTERNAL CLOCK

SEQUENCER CLOCK

ENABLE RESET

RESET-IN

START

PRES

OFF

V

CC
I/O

V

PP

CLK

Fig.8 Deactivation sequence after a normal session.

INTERNAL

123456

MGG823

RST

Fig.9 Deactivation after a card extraction during write mode.

1996 Dec 12 9

123456

MGG824

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

V
V
V
V
V

V

P

T
V

DD
x1

H
PP
SUP
x2
x3

x4

tot

stg
es

supply voltage −0.3 +18 V
voltage on pins PSEL1, PSEL2, PRES,

−0.3 V

DD

V
PRES, WRITE, START, OFF,
ALARM and RSTIN

voltage on pin V
voltage on pin V
voltage on pin V

H
PP
SUP

voltage on pins ALARM and DELAY −0.3 V
voltage on pins XTAL, I/O1(µC), I/O2(µC),

−0.3 +30 V

−0.3 V

H

−0.3 +12 V

SUP

−0.3 +6.0 V

V

V

CLKIN, CLKOUT, CLKDIV and CVNC
voltage on pins I/O1, I/O2, RST,

CLK and V

CC

continuous total power dissipation TDA8000; T

duration < 1 ms −0.3 +7.0 V

amb

= +70 °C;

− 2W

note 1; see Fig.10
TDA8000T; T

amb

= +70 °C;

− 0.92 W

note 1; see Fig.11
storage temperature −55 +150 °C
electrostatic voltage on pins I/O1, I/O2, VCC,

−4+4kV

VPP, RST and CLK
electrostatic voltage on other pins −2+2kV

Note

1. P

tot=VDD

+VH×I

× (I

DD(unloaded)

H(unloaded)+VSUP

+ ∑I

× I

)+ICC× (VDD− VCC) + max.{(VH− VPP) × I

signals

+(VDD− CVNC) × I

SUP

CVNC.

Where ‘signals’ means all signal pins used, excluding the supply pins.

PP(read)

+(VH−VPP) × I

PP(write)

}

1996 Dec 12 10

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

handbook, halfpage

4

P

tot

(W)

3

2

1

0

50 0 50 100 150

Fig.10 Power derating curve (DIP28).

HANDLING

MBE256

o

T ( C)

amb

P
(W)

3

tot

2

1

0

50

handbook, halfpage

Fig.11 Power derating curve (SO28).

MBE255

0

50 100 150

o

T ( C)

amb

Each pin withstands the ESD test according to MIL-STD-883C class 3 for card contacts, class 2 for the remaining.
Method 3015 (HBM 1500 Ω, 100 pF) 3 pulses positive and 3 pulses negative; on each pin referenced to ground.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air

SOT117-1 30 K/W
SOT136-1 70 K/W

1996 Dec 12 11

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

CHARACTERISTICS

V

=12V; VH= 25 V; V

DD

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

V

DD

I

DD

V

th1

supply voltage 6.7 − 18 V
supply current idle mode; VDD=8V162230mA

threshold voltage for power-on

reset
V
V

th4
hys4

threshold voltage on VDD(falling) 6.0 − 6.5 V

hysteresis on V

Voltage supervisor

V

SUP

I

SUP

V

th2

V

hys2

V

th3

I

DEL

V

DEL

ALARM,

I

OH

supply voltage for the supervisor − 5 − V

input current on V

threshold voltage on V

hysteresis on V

threshold voltage on DELAY 2.35 − 2.65 V

output current on DELAY pin grounded (charge) −4 −−2.5 µA

voltage on pin DELAY −−3.5 V

ALARM (open-collector outputs)

HIGH level output current on pin

ALARM
V

OL

LOW level output voltage on pin

ALARM
I

OL

LOW level output current on pin

ALARM
V

OH

HIGH level output voltage on pin

ALARM
t

d

t

pulse

Interrupt line

I

OH

V

OL

delay between V

ALARM pulse width C

OFF (open-collector)

HIGH level output current VOH=5V −−25 µA

LOW level output voltage IOL=1mA −−0.4 V

Logic inputs (RSTIN,

V

IL

V

IH

I

IL

I

IH

LOW level input voltage −−0.8 V

HIGH level input voltage 1.5 −− V

LOW level input current VIL=0V −−−20 µA

HIGH level input current VIH=5V −−20 µA

SUP

=5V; f

= 7.16 MHz or f

xtal

CLKIN

idle mode; V

= 3.58 MHz; T

= 18 V 20 28 36 mA

DD

=25°C; unless otherwise specified.

amb

active mode; unloaded 26 32 38 mA

1.5 3.0 4.0 V

th4

th2

SUP

(falling) 4.5 − 4.68 V

SUP

= 4 V (discharge) 6 −− mA

V

DEL

50 − 200 mV

− 1.6 2 mA

10 − 80 mV

VOH=5V −−25 µA

IOL=2mA −−0.4 V

VOL=0V −−−25 µA

and ALARM C

SUP

IOH= −2mA V

= 47 nF; see Fig.3 −−10 µs

DEL

=47nF 30 − 65 ms

DEL

− 1 −− V

SUP

START, WRITE, CLKDIV, PSEL1, PSEL2, PRES, PRES); note 1

1996 Dec 12 12

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Reset output to the card (RST)

V

IDLE

V

OL

V

OH

t

RST

t

r

t

f

Clock output to card (CLK)

V

IDLE

V

OL

V

OH

t

r

t

f

δ duty factor C

∆δ/∆θ thermal drift on duty factor DIP and SO packages −−0.07 − %/K

output voltage in IDLE mode −−0.4 V

LOW level output voltage IOL= 200 µA −−0.45 V

HIGH level output voltage IOH= −200 µA 4.0 − V

= −10 µAV

I

OH

− 0.7 − V

CC

CC
CC

V

V
delay between RSTIN and RST RST enabled; see Fig.6 −−2µs
rise time CL= 330 pF −−1µs
fall time CL= 330 pF −−1µs

output voltage in IDLE mode −−0.4 V
LOW level output voltage IOL= 200 µA −−0.4 V
HIGH level output voltage IOH= −200 µA 2.4 − VCC+ 0.3 V

= −20 µA 0.7V

I

OH

= −10 µAV

I

OH

CC

− 0.7 − VCC+ 0.3 V

CC

− VCC+ 0.3 V

rise time CL= 30 pF; note 2 −−18 ns
fall time CL= 30 pF; note 2 −−18 ns

= 30 pF; (XTAL or

L

45 − 55 %

CLKIN used); note 2

Card programming voltage (V

PP

)

P selected voltage see Table 1
V

PP

I

PP

output voltage idle mode −−0.4 V

read mode V
write mode; I

<50mA P−2.5%

PP

− 4% − VCC+4% V

CC

(3)

− P + 2.5%

(3)

V
output current read mode −−−50 mA

write mode −−−50 mA
write mode; V

PP

−−−400 mA

short-circuited to GND

SR slew rate up or down 0.80 1.0 1.20 V/µs

High-voltage input (V

V

H

I

H

input voltage −−30 V
input current at V

)

H

H

idle mode 2 − 3mA
active mode; unloaded;

WRITE = 0
P=5V 3 − 7mA
P = 12.5 V 5 − 10 mA
P=15V 6 − 11 mA
P=21V 8 − 13 mA

− V

V

H

voltage drop −−2.2 V

PP

1996 Dec 12 13

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Card supply voltage (VCC)

V

CC

I

CC

output voltage idle mode −−0.4 V

active mode;

< 100 mA

I

CC

4.80 − 5.20 V

output current −−−100 mA

V

connected to GND −−−400 mA

CC

SR slew rate up or down 0.80 1.0 1.20 V/µs

5 V reference output (CVNC)

V

CVNC

output voltage at CVNC I

< −15 mA 4.5 5.0 5.5 V

CVNC

Crystal connection (XTAL)

R

xtal(neg)

negative resistance at crystal 3 MHz < fi< 11 MHz;

−−−300 Ω

note 4

V

xtal

f

xtal

DC voltage at crystal 3 − 4V
crystal resonant frequency 3 − 11 MHz

External clock input (CLKIN)

f

ext

V

IL

V

IH

I

IL

I

IH

C

I

frequency at CLKIN note 2 0 − 8 MHz
LOW level input voltage 0 − 0.8 V
HIGH level input voltage 1.5 − 5V
LOW level input current VIL=0V −−−20 µA
HIGH level input current VIH=2V −−20 µA
input capacitance −−5pF

Clock output (CLKOUT)

f

CLKOUT

V

OL

V

OH

, t

t

r

f

δ duty factor

frequency on CLKOUT 1 − 8 MHz
LOW level output voltage IOL=1mA −−0.4 V
HIGH level output voltage VOH= −200 µA3−− V

= −10 µA4−− V

V

OH

rise and fall times CL= 30 pF; note 2 −−25 ns

CLKDIV = 0;

45 − 55 %

CL= 30 pF; note 2
CLKDIV = 1;

40 − 60 %

CL= 30 pF; note 2

∆δ/∆θ thermal drift on duty factor DIP and SO packages −−0.1 − %/C

1996 Dec 12 14

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Data lines [I/O1, I/O2, I/O1(µC), I/O2(µC)]; note 5

V

OH

V

OL

I

IL

V

OH

V

OL

I

IL

V

IDLE

Z

IDLE

R

pu

, t

t

r

f

Protections

T

sd

I

CC(sd)

I

PP(sd)

I

I/O(sd)

Timing

t

act

t

de

t

3

HIGH level output voltage on I/O 4.5 < V

4.5<V
IOH= −20 µA

4.5<V

4.5<V
IOH= −200 µA

LOW level output voltage on I/O I

I/O

= 1 mA;

I/O(µC) grounded

LOW level input current on I/O(µC) I/O(µC) grounded;

I

=0

I/O

I/O(µC) grounded;
I/O connected to V

HIGH level output voltage on

4.5<V

I/O(µC)
LOW level output voltage on

I/O(µC)

I

I/O(µC)

I/O grounded

LOW level input current on I/O I/O grounded; I

I/O grounded; I/O(µC)

connected to V
voltage on I/O outside a session −−0.4 V
impedance on I/O(µC) outside a

session
internal pull-up resistance between

I/O and V

CC

rise and fall times Ci=Co=30pF −−1µs

shut-down local temperature − 135 −°C
shut-down current at V
shut-down current at V

CC
PP

shut-down current at I/O from I/O to I/O(µC) 3 − 5mA

activation sequence duration see Fig.6 250 − 500 µs
deactivation sequence duration see Fig.8 250 − 500 µs
start of the window for sending

see Fig.6 −−140 µs
CLK to the card

SUP
I/O(µC)

SUP
I/O(µC)

< 5.5;

< 5.5;

< 5.5;

< 5.5;

4 − VCC+ 0.2 V

2.4 −− V

−−65 mV

−−−500 µA

−−−5mA

CC

< 5.5 4 − V

I/O

= 1 mA;

I/O(µC)

−−70 mV

=0 −−−500 µA

−−−5mA

SUP

10 −− MΩ

17 20 23 kΩ

−175 −−230 mA

−90 −−140 mA

SUP

+ 0.2 V

1996 Dec 12 15

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

t

5

t

st

t

d(clk)

Notes

1. START, WRITE, CLKDIV and PRES are active LOW; RSTIN and PRES are active HIGH.

2. The transition time and duty factor definitions are shown in Fig.12; .

3. P is the card programming voltage set by pins PSEL1 and PSEL2.

4. This condition ensures correct start-up of the oscillator with crystals having series resistance up to 100 Ω.

5. The path between I/O and I/O(µC) is as follows (see Fig.13):
a) Clamp to VCC.
b) 20 kΩ pull-up resistor to VCC; thus VOH on I/O.
c) Two opposite npn transistors with sensing pnp transistor.
d) Clamp to V
e) The base current of the npn transistor is decreasing when their collector current increases. This means the

end of the window for sending CLK

see Fig.6 160 −− µs

to the card
maximum pulse width on START

−−30 µs

before VCC starts rising
delay between RSTIN and CLK see Fig.6 −−2µs

t

=

1

-------------- ­t1t2+

on I/O and I/O(µC),

OL

δ

; thus VOH on I/O(µC).

SUP

voltage drop is very low for small currents and becomes maximum for some mA. Thus V
current limits, and high impedance feature. The output current from I/O and I/O(µC) when the line is open-circuit
is the sum of the pull-up current and the base currents.

handbook, full pagewidth

t

r

10%

90%

t

1

t

f

90%

Fig.12 Definition of transition times.

1996 Dec 12 16

10%

V

OH

1.5 V

V

OL

t

2

MBH856

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

INTERNAL PIN CONFIGURATION

handbook, full pagewidth

PSEL1

PSEL2

XTAL

I/O2
I/O1

RST

CLK

PRES
PRES

V

PP

V

GND
V

DD

V

CC

V

SUP

100

µA

100

µA

V

CC

5 kΩ

100 Ω

VCC
10 kΩ

50 Ω

20

µA

as PSEL1
as PSEL1
as PSEL1

2.5

H

kΩ

625

Ω

V

20 kΩ

1.25
kΩ

1.25
kΩ

CC

V

CC

V

CC

1.25 V

250

V

CC

100

µA

TDA8000

210

Ω

10 kΩ

10 k

V

DD

Ω

100

µA

V

H

2.5 V

Ω

1.25 V

20
µA

1350

650

V

SUP

1.5 V

Ω

Ω

V

100

5 V

7 kΩ

DD

µA

100

µA

5 V

2.5 V

100

µA

20 kΩ

400

as PSEL1

as PSEL1
as PSEL1

20

µA

µA

V

SUP

2.5
µA

4690

Ω

5310

Ω

I/O1(µC)

I/O2(µC)

RSTINas PSEL1

CLKOUT

CLKIN

CLKDIV
CVNC

WRITE
START

OFF

ALARM

ALARM

DELAY

V

SUP

Fig.13 Internal pin configuration.

1996 Dec 12 17

MBE254

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

APPLICATION INFORMATION

handbook, full pagewidth

V

CC

RST

PORT 1

INT 1

80C51

MICRO-

CONTROLLER

5 V

10 µF

CVNG

ALARM
ALARM

I/O1(µC)
I/O2(µC)

RSTIN

OFF
START
WRITE

CLKDIV

CLKOUT

P

SEL1

P

SEL2

V

SUP

VOLTAGE

SUPERVISOR

PROTECTIONS

LOGIC

INTERNAL

CLOCK

CLOCK

CIRCUITRY

47 nF

DELAY

ENABLE

12 V

22 µF

V

DD

MAIN

SUPPLY

TDA8000

PROTECTIONS

V

CC

GENERATOR

CLOCK

ENABLE

V

PP

GENERATOR

GND

CVNC

I/O1
I/O2
RST

PRES

PRES

V

CC

CLK

V

PP

5.6 V

100 nF

C1

C5

C6

C2

C7

C3

C8

C4

CARD SOCKET

OSC

XTAL

1 kΩ

3.58 MHz

Fig.14 Typical application within a consumer product.

1996 Dec 12 18

MGG825

V

H

25 VCLKIN

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

handbook, full pagewidth

2

I

C

COM

12 V

25 V

10
µF

10
µF

V

RST

DD

INT1

SDA

PORT

SCL
PORT

1

80C51

MICRO-

CONTROLLER

XTAL1
XTAL2

CVNC

ALARM

OFF

START

WRITE
RSTIN
I/O1(µC)
I/O2(µC)
P

SEL1

P

SEL2

CLKDIV

CLKOUT

100 nF

ALARM

V

SUP

TDA8000

CVNC

12 V 25 V

V

V

DD

PRES

PRES

V

RST

CLK

V

H

CC

PP

I/O1

(1)

C1

C2

C3

C4

C5

C6

C7

GND

DELAYGND GND CLKIN XTAL

47 nF

(1) If pin VH is not connected to 25 V, it should be connected to VDD.

I/O2

7.16 MHz

CARD

SOCKET

MGG826

Fig.15 Application in a remote card reader; the microcontroller is clocked and powered by the TDA8000 interface

is achieved via the I2C-bus.

1996 Dec 12 19

C8

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

PACKAGE OUTLINES

handbook, full pagewidth

DIP28: plastic dual in-line package; 28 leads (600 mil)

SOT117-1

seating plane

L

Z

28

1

pin 1 index

D

A

2

A

A

1

e

b

w M

b

1

15

E

14

c

M

(e )

M

E

1

H

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE
VERSION

SOT117-1

1 2

min.

max.

0.066

0.051

IEC JEDEC EIAJ

051G05 MO-015AH

1.7

1.3

b

b

1

0.53

0.38

0.020

0.014

0.32

0.23

0.013

0.009

REFERENCES

cD E weM

(1) (1)

36.0

35.0

1.41

1.34

1996 Dec 12 20

14.1

13.7

0.56

0.54

(1)

92-11-17
95-01-14

Z

max.

1.75.1 0.51 4.0

0.0670.20 0.020 0.16

L

3.9

3.4

EUROPEAN

PROJECTION

M

E

15.80

15.24

0.62

0.60

H

17.15

15.90

0.68

0.63

0.252.54 15.24

0.010.10 0.60

ISSUE DATE

e

1

0.15

0.13

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

SO28: plastic small outline package; 28 leads; body width 7.5 mm

D

c

y

Z

28

pin 1 index

1

e

15

14

w M

b

p

SOT136-1

E

H

E

Q

A

2

A

1

L

p

L

detail X

(A )

A

X

v M

A

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

A

max.

2.65

0.10

OUTLINE
VERSION

SOT136-1

A

0.30

0.10

0.012

0.004

A2A

1

2.45

2.25

0.096

0.089

IEC JEDEC EIAJ

075E06 MS-013AE

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

(1)E(1) (1)

cD

18.1

7.6

7.4

0.30

0.29

1.27

0.050

17.7

0.71

0.69

REFERENCES

1996 Dec 12 21

eHELLpQ

10.65

10.00

0.42

0.39

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

0.035

0.004

0.016

ISSUE DATE

91-08-13
95-01-24

o

8

o

0

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

SOLDERING
Plastic dual in-line packages

Y DIP OR WAVE

B
The maximum permissible temperature of the solder is

260 °C; this temperature must not be in contact with the
joint for more than 5 s. The total contact time of successive
solder waves must not exceed 5 s.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified storage maximum. If the printed-circuit board has
been pre-heated, forced cooling may be necessary
immediately after soldering to keep the temperature within
the permissible limit.

EPAIRING SOLDERED JOINTS

R
Apply a low voltage soldering iron below the seating plane

(or not more than 2 mm above it). If its temperature is
below 300 °C, it must not be in contact for more than 10 s;
if between 300 and 400 °C, for not more than 5 s.

Plastic small outline packages

YWAVE

B
During placement and before soldering, the component

must be fixed with a droplet of adhesive. After curing the
adhesive, the component can be soldered. The adhesive
can be applied by screen printing, pin transfer or syringe
dispensing.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder bath is
10 s, if allowed to cool to less than 150 °C within 6 s.
Typical dwell time is 4 s at 250 °C.

A modified wave soldering technique is recommended
using two solder waves (dual-wave), in which a turbulent
wave with high upward pressure is followed by a smooth
laminar wave. Using a mildly-activated flux eliminates the
need for removal of corrosive residues in most
applications.

Y SOLDER PASTE REFLOW

B
Reflow soldering requires the solder paste (a suspension

of fine solder particles, flux and binding agent) to be
applied to the substrate by screen printing, stencilling or
pressure-syringe dispensing before device placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt, infrared, and
vapour-phase reflow. Dwell times vary between 50 and
300 s according to method. Typical reflow temperatures
range from 215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 min at 45 °C.

EPAIRING SOLDERED JOINTS (BY HAND-HELD SOLDERING

R

IRON OR PULSE

-HEATED SOLDER TOOL)

Fix the component by first soldering two, diagonally
opposite, end pins. Apply the heating tool to the flat part of
the pin only. Contact time must be limited to 10 s at up to
300 °C. When using proper tools, all other pins can be
soldered in one operation within 2 to 5 s at between 270
and 320 °C. (Pulse-heated soldering is not recommended
for SO packages.)

For pulse-heated solder tool (resistance) soldering of VSO
packages, solder is applied to the substrate by dipping or
by an extra thick tin/lead plating before package
placement.

1996 Dec 12 22

Philips Semiconductors Product specification

Smart card interface TDA8000; TDA8000T

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Dec 12 23

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]/xxx
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,

Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1996 SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 537021/1200/04/pp24 Date of release: 1996 Dec 12 Document order number: 9397 750 01383