Mute ThresholdVo = -30dB2.32.94.1V
St-by Threshold0.81.31.8V
St-by Current V6 = GND100µA
Total Output VoltageA Curve;
N
f = 20Hz to 20KHz
150
220500
µV
µV
APPLICATION SUGGESTION
STAND-BY AND MUTE FUNCTIONS
(A) Microprocessor Application
In order to avoid annoying "Pop-Noise" during Turn-On/Off transients, it is necessary to guarantee the right Stby and mute signals sequence. It is quite simple to obtain this function using a microprocessor (Fig. 1 and 2).
At first St-by signal (from
µ
P) goes high and the voltage across the St-by terminal (Pin 7) starts to increase exponentially. The external RC network is intended to turn-on slowly the biasing circuits of the amplifier, this to
avoid "POP" and "CLICK" on the outputs.
When this voltage reaches the St-by threshold level, the amplifier is switched-on and the external capacitors in
series to the input terminals (C3, C5) start to charge.
It's necessary to mantain the mute signal low until the capacitors are fully charged, this to avoid that the device
goes in play mode causing a loud "Pop Noise" on the speakers.
A delay of 100-200ms between St-by and mute signals is suitable for a proper operation.
Figure 1. Microprocessor Application
C1 0.22µF
IN1
R1 10K
ST-BY
C2
10µF
µP
IN2
MUTE
S-GND
C3 0.22µF
R2 10K
C4
1µF
PW-GND
V
CC
4
7
9
Vref
12
6
8
+
-
-
+
+
-
-
+
133
1
2
15
14
C5
470µFC6100nF
OUT1+
OUT1-
OUT2+
OUT2-
D95AU258A
3/11
Page 4
TDA7297SA
d
Figure 2. Microprocessor Dri ving Sig nals
+VS(V)
V
IN
(mV)
V
ST-BY
pin 7
1.8
1.3
0.8
V
MUTE
pin 6
4.1
2.9
2.3
I
q
(mA)
V
OUT
(V)
OFF
ST-BY
PLAYMUTEST-BY
MUTE
OFF
D96AU259/mo
B) Low Cost Application
In low cost applications where the µP is not present, the suggested circuit is shown in fig.3.
The St-by and mute terminals are tied together and they are connected to the supply l ine via an external v oltage
divider.
The device is switched-on/off from the supply line and the external capacitor C4 is intended to delay the St-by
and mute threshold exceeding, avoiding "Popping" problems.
4/11
Page 5
Figure 3. Stand-alone low-cost Application
f = 5K Hz
TDA7297SA
V
CC
R1
47K
R2
47K
C4
10µF
IN1
C3 0.22µF
C5 0.22µF
IN2
PW-GND
ST-BY
S-GND
MUTE
4
7
9
12
6
8
Vref
133
+
1
470µFC2100nF
OUT1+
-
C1
OUT1-
-
2
+
+
15
OUT2+
-
-
14
OUT2-
+
D95AU260A
Figure 4. Disto rti on v s Output Pow er.Figure 5. Disto rti on v s Frequency
THD(%)
10
Vcc = 12 V
Rl = 8 ohm
1
f = 15KHz
0.1
f = 1K Hz
0.010
0.1110
Pout (W)
THD(%)
10
Vcc = 16.5V
1
0.1
0.010
1001k10k20k
Rl = 8 ohm
Pout = 100mW
Pout = 5W
freq ue n cy (H z )
5/11
Page 6
TDA7297SA
Figure 6. Fre quency Resp onse
Level(dBr)
5.0000
4.0000
3.0000
2.0000
1.0000
0.0
-1.000
-2.000
-3.000
-4.000
-5.000
101001k10 k100k
Vcc = 16.5V
Rl = 8 ohm
Pout = 1W
frequency (Hz)
Figure 7. Out put P ower vs Supply V ol ta ge
Po
(W)
10
Rf=8Ω
f=1KHz
8
6
d=10%
4
2
0
6
789101112 Vs(V)
D99AU1080
d=1%
Figure 9. Mute Attenuation vs Vpin 6
Attenuation (dB)
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
11.522.533.544.55
Vpin.6(V)
Figure 10. Stand-By attenuation vs Vpin 7
Attenuation (dB)
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
00.2 0.4 0.6 0.81 1.2 1.4 1.6 1.8 22.2 2.4
Vp in .7 (V )
Figure 8. Ptot & Efficiency vs Ouput Power
Ptot(W)
10
8
6
4
2
0
00.51234567891011
6/11
Ptot
2 x Pout (W )
µ
Vcc = 12V
= 8Ω(both
R
L
channel)
f = 1KHz
Figure 11. Quiescent Current vs Supply
Voltage
µ (%)
80
60
40
20
0
Iq (mA)
70
65
60
55
50
45
40
35
30
6789101112131415161718
Vsupply(V)
Page 7
Figure 12. PC Board Component Layout
Figure 13. Evaluation Board Top Layer Layout
TDA7297SA
Figure 14. Evaluation Board Bottom Layer Layout
7/11
Page 8
TDA7297SA
HEAT SINK DIMENSIONING:
In order to avoid the thermal protection intervention, that is placed approximati vely at Tj = 150°C, it is important
the dimensioning of the Heat Sinker R
The parameters that influence the dimensioning are:
– Maximum dissipated powe r for the device (P
– Max thermal resistance Junction to case (R
– Max. ambient temperature T
amb max
– Quiescent current Iq (mA)
Example:
= 13V, R
V
CC
= (N° channels) ·
P
dmax
= 2 · ( 4.28 ) + 0.5 = 9 W
P
dmax
(Heat Sinker)
= 8ohm, R
load
R
Th c-a
= 2.5 °C/W , T
Th j-c
2
V
cc
-------------------------- -I
R
2
load
--------------
⋅
Π
2
150 T
–
-----------------------------------------R
P
d max
Th
qVcc
amb max
(°C/W).
⋅+
–
Th j-c
dmax
)
Th j-c
amb max
)
= 50°C
150 50–
----------------------2.5–8.6°C/W===
9
In figure 15 is shown the Power derating curve for the device.
Figure 15. Power derating curve
35
35
30
30
25
25
20
20
(c)
Pd (W)
Pd (W)
15
15
10
10
5
5
0
0
04080120160
04080120160
(c)
(d)
(d)
(b)
(b)
Tamb (°C)
Tamb (°C)
(a)
(a)
a)Infinite Heatsink
a)Infinite Heatsink
b)3.5 °C/ W
b)3.5 °C/ W
c)5.0 °C/ W
c)5.0 °C/ W
d)7.0 °C/ W
d)7.0 °C/ W
8/11
Page 9
TDA7297SA
Clipwatt Assembling Suggestions
The suggested mounting method of Clipwatt on external heat sink, requires the use of a clip placed as much
as possible in the plastic body center, as indicated in the example of figure 16.
A thermal grease can be used in order to reduce the additio nal thermal resistance of the contact betw een package and heatsink.
A pressing force of 7 - 10 Kg gives a good contact and the clip mus t be designed in order to avoid a maxi mum
contact pressure of 15 Kg/mm2 between it and the plastic body case.
As example , if a 15Kg force is applied by the clip on the package , the clip must have a contact area of 1mm2
at least.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent r i ght s of STMi croelectr oni cs. Spec i fications mentioned i n this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics product s are not
authorized for use as cri tical comp onents in lif e support devi ces or systems without express written approva l of STMicroel ectronics.
The ST logo is a registered trademark of STMicroelectr oni cs.
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