Datasheet TDA4817G, TDA4817 Datasheet (Siemens)

Power Factor Controller

TDA 4817

IC for High Power Factor and
Active Harmonic Filtering

Advance Information Bipolar IC

Features

● IC for sinusoidal line-current consumption

● Power factor approaching 1

● Controls boost converter as an active harmonics filter

● Direct drive of SIPMOS transistor

● Zero crossing detector for discontinuous operation mode

with variable frequency

● 110/220 V AC operation without switchover

● Standby current consumption of 0.5 mA

P-DIP-8-1

P-DSO-8-1

Type Ordering Code Package

▼

TDA 4817 Q67000-A8298 P-DIP-8-1

▼

TDA 4817 G Q67000-A8299 P-DSO-8-1 (SMD)
▼ = New type

The TDA 4817 contains all functions for designing electronic ballasts and switched-mode power
supplies with sinusoidal line current consumption and a power factor approaching 1.

The TDA 4817 controls a boost converter as an active harmonic filter in a discontinuous (triangular
shaped current) mode with variable frequency.

A typical application is in electronic ballasts, especially when a large number of such lamps are
concentrated on one line supply point.

The output voltage of this filter is regulated with high efficiency. Therefore the device can be easily
operated on different line voltages (110/220 V

) without any switchover.

AC

The TDA 4817 is an 8-pin-economy-version of the TDA 4814 A without reference voltage output
and start/stop monitoring circuit.

Semiconductor Group 1 05.95

TDA 4817 TDA 4817 G

TDA 4817

Pin Configurations

(top view)

Pin Definitions and Functions
Pin Symbol Function

1 GND Ground
2 QSIP Driver output
3

V

S

Supply voltage
4 C – Comparator input
5 IM1 Multiplier input
6 OP – Input
7 QOP/IM2 Operational-amplifier output QOP and multiplier input M2
8 I Detector Detector input

Semiconductor Group 2

TDA 4817

Block Diagram

Semiconductor Group 3

TDA 4817

Circuit Description

This device has a conditioning circuit for the internal power supply. It allows standby operation with
very low current consumption (less than 0.5 mA), a hysteresis between enable and switch-off levels
and an internal voltage stabilization. An integrated Z-diode limits the voltage onVS, when impressed
current is fed.

The output driver (Q SIP) is controlled by detector input and current comparator.
The detector input (I DET) which is highly resistive in the operating state reacts on hysteresis-

determined voltage levels. To keep down the amount of circuitry required, clamping diodes are
provided which allow control by a current source.

The operating state of the boost converter choke is sensed via the detector input. H-level means
that the choke discharges and the output driver is inhibited. H-level sets a flip-flop, which stores the
switch-off instruction of the current comparator to reduce susceptibility to interference. As soon as
demagnetization is finished the choke voltage reverses and the detector input is set to L-level, thus
enabling the output driver. This ensures that the choke is always currentless when the SIPMOS
transistor switches on and that no current gaps appear.

The nominal voltage of the multiplier output is compared to the voltage derived from the actual line
current (– I COMP), thus setting the switch-off threshold of the comparator. The current comparator
blocks the output driver when the nominal peak value of the choke current given by the multiplier
output is reached.

This state is maintained in the flip-flop until H-level appears at detector input which takes over the
hold function and resets the flip-flop.

Operating states might occur without any useful detector signal. This is the case with magnetic
saturation of the choke and when the input voltage approaches or exceeds the output voltage as,
for example, during switch-on. The driver remains inhibited for the flip-flop due to the absent set
signal.

The trigger signal can be derived from the subsequent lamp generator or a SMPS control device.
The trigger signal level should be so low that with standard operation the signal from the detector
winding dominates. The multiplier delivers the preset nominal value for the current comparator by
multiplying the input voltage (IM1), which determines the nominal waveform and the output voltage
of the control amplifier.

The control amplifier stabilizes the output dc voltage of the active harmonic filter in the event of load
and input voltage changes. The control amplifier compares the actual output voltage to a
reference voltage which is provided in the IC and stable with temperature.

Output Driver

The output driver is intended to drive a SIPMOS transistor directly.
It is designed as a push-pull stage.
Both the capacitive input impedance and keeping the gate level at zero potential in standby

operation by an internal 10-kΩ-resistor are taken into account. Possible effects on the output driver
by line inductances or capacitive couplings via SIPMOS transistor Miller capacitance are limited by
diodes connected to ground and supply voltage.

Semiconductor Group 4

Absolute Maximum Ratings

Parameter Symbol Limit Values Unit Remarks

min. typ. max.

TDA 4817

Supply voltage V
Inputs

Comparator
Operational amplifier

Multiplier
Output OP
Z-current V

-GND I

S

Driver output QSIP V
QSIP clamping diodes

Detector input
Detector clamping diodes

Junction temperature
Storage temperature
Thermal resistance

system-air TDA 4817

TDA 4817 G

V
V
V

V

I

V
I

T
T

R
R

S

C
OP
M1

QOP

Z

QSIP

QSIP

Det

Det

j

stg

th SA
th SA

–

–

– 0.3 V
– 0.3

– 0.3
– 0.3

Z

20
20
20

V VZ = Z-voltage
V

V
V

– 0.3 6 V
0 100 mA Observe P
– 0.3 V

S

– 10 10 mA V

V

> VS or

QSIP

V

< – 0.3 V

QSIP

0.9 6 V
– 10 10 mA V

Det

V

Det

> 6 V or

< 0.9 V

150 ˚C

– 55 125 ˚C

100
170

K/W
K/W

P-DIP-8 package
P-DSO-8 package

max

Operating Range

Supply voltage V
Z-current I
Driver current I
Ambient temperature T

S

Z

QSIP

A

V

Son

V

Z

V

1)

0 100 mA Observe P
– 500 500 mA Observe P
– 25 85 ˚C

max

max

Semiconductor Group 5

TDA 4817

Characteristics

V

< VS < VZ; TA = – 25 to 85 ˚C

SON

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Current Consumption

Without load on driver
(QSIP) and
Load on QSIP with
SIPMOS gate;
dynamic operation

V

; QSIP low

REF

I

S

I

S

I

S

5

0.5
10
15

mA
mA
mA

0 V < VS < V

V

< VS < V

SON

V

= 12 V;

S

f

= 50 kHz;

switch

SON

Z

load QSIP = 10 nF

Hysteresis on

V

S

Turn-ON threshold for

V

rising

S

Switching hysteresis

Comparator

Input offset voltage
Input current
Common-mode input
voltage

Operational Amplifier

Open-loop voltage gain
Input offset voltage
Input current
Common-mode input
voltage
Output current
Output voltage
Gain-bandwidth product
Transition phase
Voltage Feedback
Threshold

Temperature response

V

SH

V

Shy

V

IO

– I

I

V

ICM

G

VO

V

IO

– I

I

V

IC

I

Q

V

Q

f

r

Φ

T

V

FB

∆VFB/∆T

9.6

1.0

– 10

0

60
– 10

0
– 3

1.2

1.96

– 0.3

10.4 11.2

1.7

10
2

3.5

80

10
2

3.5

1.5

4
2
120

2

2.04

0.3

V
V

mV
µA

V

dB
mV
µA

V
mA
V
MHz
deg

V

mV/K

T

= 25 ˚C

j

Pin 6 connected to
Pin 7

Output Driver

H-output voltage
L-output voltage
Output current rising edge
falling edge

V
V

– I

I

QSIP

QSIPH
QSIPL

QSIP

5

200
250

Semiconductor Group 6

300
350

1

400

450

V
V
mA
mA

I

= – 10 mA

QSIP

I

= 10 mA

QSIP

C

= 10 nF

L

C

= 10 nF

L

TDA 4817

Characteristics (cont’d)

V

< VS < VZ; TA = – 25 to 85 ˚C

SON

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Z-Diode (VS)

P

Z-voltage (observe

Multiplier

max

) V

Z

13 15.5 17 V IZ = 200 mA

Quadrant for input
voltages
Input voltage M1
Reference level for M1
Input voltage M2
Reference level for M2
Input current M1, M2
Max. output voltage
Multiplier gain
Multiplier gain
Temperature response
of coefficient

Delay Times

Input comparator-QSIP

Detector

Upper switching voltage
for voltage rising (H)
Lower switching voltage
for voltage falling (L)
Input current
Clamping-diode
level positive

negative

Switching hysteresis
Calculation of output voltage

V

M1

V

REF M1

V

M2

V

REF M2

– I

I

V

QM max

C

Q25

C

Q

∆TC/C

t

I

V

DetH

V

DetL

– I

Det

V

+

Det

V

–

Det

V

Dethy

V

: VQM = C x VM1 x VM2 in V.

QM

0

V

REF

0

0.62

0.55
– 0.3

Q

1.0

0.95

50

I.

0

V

REF

1.6

0.67

– 0.1

2

V

REF

2

0.72

0.77

0.1

+ 1

qu

V
V
V
V
µA
V
V
V
%/K

500 700 ns

1.3

1.6

V

V

10

6.9

µA

V

0.6

300

mV

– 1
– 1

T

= 25 ˚C

j

1)

2)

0.9 V < V

I

= 3 mA

Det

I

= 3 mA

Det

1)

< 6 V

Det

1) V

= 1 V

M1

V

= V

M2

2) Step function on comparator input ∆V

REF

+ 1 V

from – 100 mV to + 100 mV.

Comp

Semiconductor Group 7

Multiplier Characteristics

TDA 4817

Semiconductor Group 8

TDA 4817

Discontinuous Operation Mode with Variable Frequency

The TDA 4817 works in a discontinuous operation mode with variable frequency.
The principle of a freely oscillating controller exploits the physical relationship between current and

voltage at the boost converter choke. The current in the semiconductors flows in a triangular shape.
This is only when the current in the boost converter diode has gone to zero that the transistor goes
conductive. This arrangement does away with the diode’s power-squandering reverse currents.

If triangular currents flow continuously through the boost converter choke the input current
averaged over a high-frequency period is exactly half the peak of the high-frequency choke current.

If the peak values of the choke current are located along an envelope curve that is proportional to
a sinusoidal low- frequency input voltage, the input current available after smoothing in an RFI filter
is sinusoidal.

Semiconductor Group 9

TDA 4817

Application Circuit: Electronic Ballast

Semiconductor Group 10

TDA 4817

The TDA 4817 controls a boost converter as an active harmonic filter, drawing a sinusoidal line
current and providing a regulated DC voltage at the converter output.

The active harmonic filter improves the power factor in electronic ballasts for fluorescent lamps and
in switched-mode power supplies, reducing the harmonic content of the incoming, non rectified
mains current and if suitably dimensioned permitting operation at input voltages between 90 V and
270 V.

Benefits of TDA 4817 in Electronic Ballasts and SMPS

● Sinusoidal line current consumption

● Power factor approaching 1 increases the power available from the AC line by more than 35 %

compared to conventional rectifier circuits. Circuit breakers and connectors become more
reliable because of the lower peak currents.

● Active harmonic filtering reduces harmonic content in line current to meet VDE/IEC/EN-

standards.

● Wide-range power supplies are easier to implement for AC input voltages of 90 to 250 V without

switch-over.

● Preregulated DC output voltage provides optimal operating conditions for a subsequent

converter.

● Reduced smoothing capacitance:

For a given amplitude of the 100/120 Hz ripple voltage the smoothing capacitance can be
reduced by 50 % in comparison to a conventional rectifier circuit.
Reduced choke size:
Rectifier circuits capable of more than 200 W usually employ chokes to decrease the charging
current ot the capacitor. These chokes are larger than those used in a preregulator with power­factor control.

● Higher efficiency:

A preregulator does cause some additional losses, but these are more than compensated for by
the cut in losses created by the rectifier configuration and the optimum operating conditions that
are produced for a subsequent converter, even in the event of supply-voltage fluctuations.

Semiconductor Group 11

Summary of Effects of DC-Voltage Preregulation with Power-Factor Control

TDA 4817

Parameter Conventional

Power
Rectification

Mean DC supply voltage 280 V 340 V
Maximum DC supply voltage with line overvoltage 350 V 350 V
Minimurn DC supply voltage with line undervoltage 230 V 330 V
Relative reverse voltage of diodes with line overvoltage 1 0.7
Relative forward resistance of SIPMOS transistors with

sustained conducting-state power loss and line under­voltage

Relative forward resistance of SIPMOS transistors with
sustained conducting-state power loss and rated supply
voltage

Relative input capacitance with sustained ripple voltage 1 0.3 to 0.5
Power factor 0.5 to 0.7 0.99

1 2.06

1 1.74

Power
Rectification with
Preregulator and
Power-Factor
Control

Semiconductor Group 12