Datasheet TDA1072AT Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA1072AT

AM receiver circuit

Product specification
File under Integrated Circuits, IC01

March 1989

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

GENERAL DESCRIPTION

The TDA 1072AT integrated AM receiver circuit performs the active and part of the filtering functions of an AM radio
receiver. It is intended for use in mains-fed home receivers and car radios. The circuit can be used for oscillator
frequencies up to 50 MHz and can handle RF signals up to 500 mV. RF radiation and sensitivity to interference are
minimized by an almost symmetrical design. The voltage-controlled oscillator provides signals with extremely low
distortion and high spectral purity over the whole frequency range even when tuning with variable capacitance diodes.
If required, band switching diodes can easily be applied. Selectivity is obtained using a block filter before the IF amplifier.

Features

• Inputs protected against damage by static discharge

• Gain-controlled RF stage

• Double balanced mixer

• Separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils

• Gain-controlled IF stage with wide AGC range

• Full-wave, balanced envelope detector

• Internal generation of AGC voltage with possibility of second-order filtering

• Buffered field strength indicator driver with short-circuit protection

• AF preamplifier with possibilities for simple AF filtering

• Electronic standby switch.

QUICK REFERENCE DATA

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Supply voltage range V
Supply current range I
RF input voltage for

S+N/N = 6 dB at m = 30% V

RF input voltage for 3%

total harmonic distortion
(THD) at m = 80% V

AF output voltage with

= 2 mV; fI = 1 MHz;

V

I

m = 30% and f

AGC range: change of V

for 1 dB change of V

= 400 Hz V

m

I

O(AF)

Field strength indicator

voltage at V

= 2.7 kΩ V

R

L(9)

= 500 mV;

I

PACKAGE OUTLINE

P

P

I

I

O(AF)

IND

7.5 − 10 V
15 − 26 mA

− 1.5 −µV

− 500 − mV

− 310 − mV

− 86 − dB

− 2.8 − V

16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 August 13.

March 1989 2

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

(1) Coil data: TOKO sample no. 7XNS-A7523DY; L1: N1/N2 = 12/32; Qo = 65; QB = 57.

Filter data: Z

= 700 Ωat R

F

= 3 kΩ; Z1 = 4.8 kΩ.

3-4

Fig.1 Block diagram and test circuit (connections shown in broken lines are not part of the test circuit).

March 1989 3

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

FUNCTIONAL DESCRIPTION
Gain-controlled RF stage and mixer

The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range.
Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are
handled with low distortion and the S/N ratio of small signals is also improved. Low noise working is achieved in the
differential amplifier by using transistors with a low base resistance.

A double balanced mixer provides the IF output to pin 1.

Oscillator

The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator
is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using
variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V
buffered oscillator output is available for driving a synthesizer. If this is not needed, resistor R

can be omitted.

L(10)

Gain-controlled IF amplifier

This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. Both
stages are gain-controlled by the AGC negative feedback network.

11-16

. An extra

Detector

The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. The residual IF carrier is
blocked from the signal path by an internal low-pass filter.

AF preamplifier

This stage preamplifies the audio frequency output. The amplifier output stage uses an emitter follower with a series
resistor which, together with an external capacitor, provides the required low-pass filtering for AF signals.

AGC amplifier

The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the
AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives
a fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further
reduced by using capacitors of smaller value in the external filter. The AGC voltage is fed to the RF and IF stages via
suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications.

Field strength indicator output

A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input
signals over the whole dynamic range. If field strength information is not needed, R

can be omitted.

L(9)

Standby switch

This switch is primariIy intended for AM/FM band switching. During standby mode the oscillator, mixer and demodulator
are switched off.

Short-circuit protection

All pins have short-circuit protection to ground.

March 1989 4

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

RATINGS

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT

Supply voltage V

P

= V

13-16

Input voltage

pins 14-15 V
pins 14-16 V
pins 15-16 V
pins 14-16 V
pins 15-16 V

Input current

(pins 14 and 15) I
Total power dissipation (note 1) P
Operating ambient temperature range T
Storage temperature range T
Junction temperature T

V

13

14-15
14-16
15-16
14-16
15-16

14-15

tot
amb
stg
j

− 12 V

− 10 V

− V

− V

P
P

V
V

−−0.6 V

−−0.6 V

− 200 mA

− 300 mW

−40 + 80 °C

−55 + 150 °C

− + 125 °C

Note

1. Mounted on epoxiprint.

THERMAL RESISTANCE

From junction to ambient R

Note

1. Mounted on epoxiprint.

th j-a

300 K/W
160 K/W

(1)

March 1989 5

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

CHARACTERISTICS

= V

V

P

measurements are with respect to ground (pin 16); unless otherwise specified

Supplies

Supply voltage (pin 13) V
Supply current (pin 13) I

RF stage and mixer

Input voltage (DC value) V
RF input impedance at

V

RF input impedance at

V

IF output impedance R

Conversion transconductance

before start of AGC I
Maximum IF output voltage,

inductive coupling to pin 1,

(peak-to-peak value) V
DC value of output current

(pin 1) at V
AGC range of input stage − 30 − dB
RF signal handling capability:

input voltage for THD = 3%

at m = 80% (RMS value) V

Oscillator

Frequency range ∆f 0.6 − 60 MHz
Oscillator amplitude

(pins 11 to 12)

(peak-to-peak value) V
External load impedance R
External load impedance for

no oscillation R
Ripple rejection at V

= 100 mV (RMS value);

f

p

(RR = 20 log [V

13-16

= 8.5 V; T

= 25 °C; fi = 1 MHz; fm = 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all

amb

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

13

13

14-15

< 300 µVR

I

> 10 mV R

I

= 0 V I

I

P

14-15

C

14-15

14-15

C

14-15
1

C

1

1/VI

1(p-p)

1

I(rms)

11-12(p-p)
11-12(ext)

11-12(ext)

7.5 8.5 10 V
15 23 27 mA

− VP / 2 − V

− 5.5 − kΩ

− 25 − pF

− 8 − kΩ

− 22 − pF
500 0 0 kΩ

− 6 − pF

− 6.5 − mA/V

− 5 − V

− 1.2 − mA

− 500 − mV

− 130 150 mV

0.5 − 200 kΩ

−−60 Ω

= 100 Hz

])

13/V11

March 1989 6

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Source voltage for switching

diodes (6 × V

)V

BE

DC output current (for

switching diodes) V

P

= V

13

≤ 9 V I

Change of output voltage at

= 20 mA (switch to

∆I

11

maximum load) ∆V

Buffered oscillator output

DC output voltage V
Output signal amplitude

(peak-to-peak value) V
Output impedance R
Output current I

IF, AGC and AF stages

DC input voltage V
IF input impedance R

C

IF input voltage for

THD = 3% at m = 80% V
Voltage gain before start

of AGC V
AGC range of IF stages:

change of V

change of V

V

= 75 mV ∆V

3-4(ref)

3-4
O(AF)

for 1 dB

;

AF output voltage at

= 50 µVV

V

3-4(IF)

AF output voltage at

V

= 1 mV V

3-4(IF)

AF output impedance (pin 6) Z

Indicator driver

Output voltage at

= 0 mV R

V

I

= 2.7 kΩ V

L(9)

Output voltage at

VI= 500 mV R

= 2.7 kΩ V

L(9)

Load resistance R

11

11

11

10

10(p-p)
10

10(peak)

3-4
3-4
3-4

3-4

3-4/V6

3-4

O(AF)

O(AF)

−3.5 − kΩ

O

9

9
L(9)

− 4.2 − V

0 − 5mA

− 0.5 − V

− 0.7 − V

− 320 − mV

− 170 −Ω

−−−3mA

− 2 − V

2.4 3.0 3.9 kΩ

− 7 − pF

− 90 − mV

− 68 − dB

− 55 − dB

− 130 − mV

− 310 − mV

− 20 150 mV

2.5 2.8 3.1 V

2.7 −−kΩ

March 1989 7

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Standby switch

Switching threshold at

= 7.5 to 18 V;

V

P

= −40 to +80 °C

T

amb

ON-voltage V

OFF-voltage V

ON-current V

OFF-current V

= 0 V I

2

= 20 V I

2

OPERATING CHARACTERISTICS

= 8.5 V; fI = 1 MHz; m = 30%; fm = 400 Hz; T

V

P

= 25 °C; measured in Fig.1; unless otherwise specified

amb

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

RF sensitivity

RF input required for

S+N/N = 6 dB V

S+N/N = 26 dB V

S+N/N = 46 dB V
RF input at start of AGC V

RF large signal handling

RF input at

THD = 3%; m = 80% V

THD = 3%; m = 30% V

THD = 10%; m = 30% V

AGC range

Change of V

1 dB change of V

6 dB change of V

for

I

V

O(AF)
O(AF)

= 500 mV ∆V

I(ref)

V

= 500 mV ∆V

I(ref)

Output signal

AF output voltage at

V

= 4 µV m = 80% V

I

= 1 mV V

V

I

Total harmonic distortion at

= 1 mV m = 80% d

V

I

= 500 mV m = 30% d

V

I

Signal-to-noise ratio V

= 100 mV S+N/N − 58 − dB

I

2

2
2
2

I
I
I
I

I
I
I

I
I

O(AF)
O(AF)

tot
tot

0 − 2V

3.5 − 20 V

−−−200 µA

−−10 µA

− 1.5 −µV

− 15 −µV

− 150 −µV

− 30 −µV

− 500 − mV

− 700 − mV

− 900 − mV

− 86 − dB

− 91 − dB

− 130 − mV

240 310 390 mV

− 0.5 − %

− 1 − %

March 1989 8

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Ripple rejection at

= 2 mV

V

I

= 100 mV (RMS value)

V

P

= 100 Hz

f

p

(RR = 20 log [V

P/VO(AF)

Unwanted signals

Suppression of IF whistles

= 15 µV; m = 0%

at V

I

related to AF signal of
m = 30%

≈ 2 × f

at f
at f

I
I

≈ 3 × f

IF
IF

IF suppression at RF input

for symmetrical input α
for asymmetrical input α

Residual oscillator signal

at mixer output
at f

osc

at 2 × f

osc

]) RR − 38 − dB

α

2IF

α

3IF

IF
IF

I

(osc)

I

(2osc)

− 37 − dB

− 44 − dB

− 40 − dB

− 40 − dB

− 1 −µA

− 1.1 −µA

March 1989 9

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

APPLICATION INFORMATION

(1) Capacitor values depend on crystal type.
(2) Coil data: 9 windings of 0.1 mm dia laminated Cu wire on TOKO coil set 7K 199CN; Qo = 80.

Fig.2 Oscillator circuit using quartz crystal; centre frequency = 27 MHz.

Fig.3 AF output as a function of RF input in the

circuit of Fig.1; fI= 1 MHz; fm = 400 Hz;
m = 30%.

March 1989 10

Fig.4 Total harmonic distortion and S+N/N as

functions of RF input in the circuit of Fig.1;
m = 30% for (S+N)/N curve and m = 80% for
THD curve.

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

Fig.5 Total harmonic distortion as a function of modulation frequency at VI = 5 mV; m = 80%; measured

in the circuit of Fig.1 with C

= 0 µF and 2.2 µF.

7-16(ext)

 with IF filter

 - - with AF filter

 with IF and AF filter

Fig.6 Indicator driver voltage as a function of RF

input in the circuit of Fig.1.

March 1989 11

Fig.7 Typical frequency response curves from

Fig.1 showing the effects of filtering.

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

Fig.8 Car radio application with inductive tuning.

Fig.9 AF output as a function of RF input using the circuit of Fig.8 with that of Fig.1.

March 1989 12

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

Fig.10 Suppression of cross-modulation as a function of input signal, measured in the circuit of Fig.8 with the

input circuit as shown in Fig.11. Curve is for wanted V
at the aerial input, V'
Wanted signal (V'
Unwanted signal (V'

aew

, V'

aew

, V

aeu

are signals at the unloaded output of the aerial.

aeu

): fi = 1 MHz; fm = 400 Hz; m = 30%.

rfw

, V

): fi = 900 kHz; fm = 400 Hz; m = 30%.

rfu

/unwanted V

O(AF)

O(AF)

= 20 dB; V

rfw

, V

are signals

rfu

Effective selectivity of input tuned circuit = 21 dB.

Fig.11 Input circuit to show cross-modulation suppression (see Fig.10).

March 1989 13

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

Fig.12 Oscillator amplitude as a function of the impedance at pins 11 and 12 in the circuit of Fig.8.

Fig.13 Total harmonic distortion and (S+N)/N as functions of RF input using the circuit of Fig.8 with that of Fig.1.

March 1989 14

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

Fig.14 Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in Fig.14;

centre frequency = 455 kHz.

March 1989 15

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

Fig.15 IF filter variants applied to the circuit of Fig.1; for filter data refer to Table 1.

March 1989 16

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

= 455 kHz).

o

(N1) (N2)

= maximum (optional selectivity curve at centre frequency f

F

65 (typ.) 50 75 60 75

33 3 3 kΩ

24 24 24 38 dB

4.8 3.8 4.2 4.8 kΩ

57 40 52 (L1) 18 (L2) 55

0.70 0.67 0.68 0.68 kΩ

35 31 36 42 dB

52 49 54 64 dB

63 58 66 74 dB

See also Fig.14.

FILTER NO. 1 2 3 4 UNIT

laminated wire 0.09 0.08 0.09 0.08 0.09 mm

Coil data L1 L1 L1 L2 L1

Value of C 3900 430 3900 4700 3900 pF

N1: N2 12 : 32 13 : (33 + 66) 15 : 31 29 : 29 13 : 31

Table 1 Data for IF filters shown in Fig.15. Criterium for adjustment is Z

Diameter of Cu

o

Q

Schematic *

of

windings

Toko order no. 7XNS-A7523DY L7PES-A0060BTG 7XNS-A7518DY 7XNS-A7521AIH 7XNS-A7519DY

Resonators

Murata type SFZ455A SFZ455A SFZ455A SFT455B

March 1989 17

D (typical value) 4 4 4 6 dB

L

, R

G

R

Bandwidth (−3 dB) 4.2 4.2 4.2 4.5 kHz

9kHz

S

Filter data

B

I

Z

Q

Z

9kHz

18kHz

F

Bandwidth (−3 dB) 3.6 3.8 3.6 4.0 kHz

S

27kHz

S

S

* The beginning of an arrow indicates the beginning of a winding; N1 is always the inner winding. N2 the outer winding.

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

March 1989 18

good large-signal handling.

(1) Values of capacitors depend on the selected group of capacitive diodes BB112.

Fig.16 Car radio application with capacitive diode tuning and electronic MW/LW switching. The circuit includes pre-stage AGC optimised for

(2) For IF filter and coil data refer to Fig.1.

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

PACKAGE OUTLINE

SO16: plastic small outline package; 16 leads; body width 3.9 mm

D

c

y

Z

16

pin 1 index

1

e

9

8

w M

b

p

SOT109-1

E

H

E

A

2

A

1

L

detail X

A

X

v M

A

Q

(A )

L

p

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

A

max.

1.75

0.069

OUTLINE
VERSION

SOT109-1

A1A2A3b

0.25

1.45

0.10

0.0098

0.0039

0.25

1.25

0.057

0.01

0.049

IEC JEDEC EIAJ

076E07S MS-012AC

p

0.49

0.36

0.019

0.014

0.25

0.19

0.0098

0.0075

(1)E(1) (1)

cD

10.0

4.0

3.8

0.16

0.15

1.27

0.050

9.8

0.39

0.38

REFERENCES

March 1989 19

eHELLpQZywv θ

1.05

0.041

1.0

0.4

0.039

0.016

0.7

0.25

0.6

0.028

0.01 0.004

0.020

EUROPEAN

PROJECTION

0.25 0.1

0.01

0.7

0.3

0.028

0.012

ISSUE DATE

91-08-13
95-01-23

o

8

o

0

6.2

5.8

0.24

0.23

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

Reflow soldering

Reflow soldering techniques are suitable for all SO
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

(order code 9398 652 90011).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering techniques can be used for all SO
packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be
parallel to the solder flow.

• The package footprint must incorporate solder thieves at
the downstream end.

March 1989 20

Philips Semiconductors Product specification

AM receiver circuit TDA1072AT

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

March 1989 21