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INTEGRATED CIRCUITS
DATA SH EET
TDA1015
1 to 4 W audio power amplifier
Product specification
File under Integrated Circuits, IC01
November 1982
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
The TDA1015 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device
is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 Ω load impedance. The
very low applicable supply voltage of 3,6 V permits 6 V applications.
Special features are:
• single in-line (SIL) construction for easy mounting
• separated preamplifier and power amplifier
• high output power
• thermal protection
• high input impedance
• low current drain
• limited noise behaviour at radio frequencies
QUICK REFERENCE DATA
Supply voltage range V
Peak output current I
Output power at d
V
= 12 V; RL = 4 Ω P
P
V
= 9 V; RL = 4 Ω P
P
= 6 V; RL = 4 Ω P
V
P
Total harmonic distortion at P
= 10%
tot
= 1 W; RL = 4 Ω d
o
OM
3,6 to 18 V
P
max. 2,5 A
typ. 4,2 W
o
typ. 2,3 W
o
typ. 1,0 W
o
typ. 0,3 %
tot
Input impedance
preamplifier (pin 8) |Zi| > 100 kΩ
power amplifier (pin 6) |Z
Total quiescent current I
Operating ambient temperature T
Storage temperature T
| typ. 20 kΩ
i
tot
typ. 14 mA
−25 to + 150 °C
amb
−55 to + 150 °C
stg
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1; 1996 August 13.
November 1982 2
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
November 1982 3
Fig.1 Circuit diagram.
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
RATINGS
Limiting values in accordance with Absolute Maximum System (IEC 134)
Supply voltage V
Peak output current I
P
OM
Total power dissipation see derating curve Fig.2
Storage temperature T
Operating ambient temperature T
stg
amb
A.C. short-circuit duration of load
during sine-wave drive; VP = 12 V t
sc
max. 18 V
max. 2,5 A
−55 to + 150 °C
−25 to + 150 °C
max. 100 hours
Fig.2 Power derating curve.
HEATSINK DESIGN
Assume V
= 12 V; RL = 4 Ω; T
P
= 45 °C maximum.
amb
The maximum sine-wave dissipation is 1,8 W.
150 45–
R
th j-a=Rth j-tab+Rth tab-h+Rth h-a
Where R
of the package is 45 K/W, so no external heatsink is required.
th j-a
= = 58 K/W.
---------------------18,
November 1982 4
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
D.C. CHARACTERISTICS
Supply voltage range V
Repetitive peak output current I
Total quiescent current at V
= 12 V I
P
P
ORM
tot
3,6 to 18 V
<2A
typ. 14 mA
<25mA
A.C. CHARACTERISTICS
= 25 °C; VP = 12 V; RL = 4 Ω; f = 1 kHz unless otherwise specified; see also Fig.3.
T
amb
A.F. output power at d
= 10% (note 1)
tot
with bootstrap:
V
= 12 V; RL = 4 Ω P
P
V
= 9 V; RL = 4 Ω P
P
V
= 6 V; RL = 4 Ω P
P
o
o
o
typ. 4,2 W
typ. 2,3 W
typ. 1,0 W
without bootstrap:
V
= 12 V; RL = 4 Ω P
P
o
typ. 3,0 W
Voltage gain:
preamplifier (note 2) G
power amplifier G
total amplifier G
v1
v2
v tot
typ. 23 dB
typ. 29 dB
typ. 52 dB
49 to 55 dB
Total harmonic distortion at P
= 1,5 W d
o
tot
typ. 0,3 %
< 1,0 %
Frequency response; −3 dB (note 3) B 60 Hz to 15 kHz
Input impedance:
preamplifier (note 4) |Z
power amplifier |Z
Output impedance preamplifier |Z
Output voltage preamplifier (r.m.s. value); d
< 1% (note 2) V
tot
|
i1
| typ. 20 kΩ
i2
| typ. 1 kΩ
o1
o(rms)
> 100 kΩ
typ. 200 kΩ
typ. 0,8 V
Noise output voltage (r.m.s. value; note 5)
RS = 0 Ω V
R
= 10 kΩ V
S
Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; R
= 0 Ω V
S
n(rms)
n(rms)
n(rms)
typ. 0,2 mV
typ. 0,5 mV
typ. 8 µV
Ripple rejection (note 6); f = 100 Hz RR typ. 38 dB
November 1982 5
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
Notes
1. Measured with an ideal coupling capacitor to the speaker load.
2. Measured with a load resistor of 20 kΩ.
3. Measured at Po = 1 W; the frequency response is mainly determined by C1 and C3 for the low frequencies and by
C4 for the high frequencies.
4. Independent of load impedance of preamplifier.
5. Unweighted r.m.s. noise voltage measured at a bandwidth of 60 Hz to 15 kHz (12 dB/octave).
6. Ripple rejection measured with a source impedance between 0 and 2 kΩ (maximum ripple amplitude: 2 V).
7. The tab must be electrically floating or connected to the substrate (pin 9).
Fig.3 Test circuit.
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
APPLICATION INFORMATION
Fig.4 Circuit diagram of a 1 to 4 W amplifier.
Fig.5 Total quiescent current as a function of supply voltage.
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
Fig.6 Total harmonic distortion as a function of output power across RL; with bootstrap; −−− without
bootstrap; f = 1 kHz; typical values. The available output power is 5% higher when measured at pin 2
(due to series resistance of C10).
Fig.7 Output power across RLas a function of supply voltage with bootstrap; d
The available output power is 5% higher when measured at pin 2 (due to series resistance of C10).
November 1982 8
= 10%; typical values.
tot
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
Fig.8 Voltage gain as a function of frequency; Porelative to 0 dB = 1 W; VP= 12 V; RL= 4 Ω.
Fig.9 Total harmonic distortion as a function of frequency; P = 1 W; VP= 12 V; RL= 4 Ω.
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
Fig.10 Ripple rejection as a function of R2 (see Fig.4); RS= 0; typical values.
Fig.11 Noise output voltage as a function of R2 (see Fig.4); measured according to A-curve; capacitor C5 is
adapted for obtaining a constant bandwidth.
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
Fig.12 Noise output voltage as a function of frequency; curve a: total amplifier; curve b: power amplifier;
B = 5 kHz; RS= 0; typical values.
Fig.13 Voltage gain as a function of R2 (see Fig.4).
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
PACKAGE OUTLINE
SIL9MPF: plastic single in-line medium power package with fin; 9 leads
D
D
1
q
P
pin 1 index
P
1
q
2
q
1
SOT110-1
A
2
A
3
A
A
4
E
seating plane
19
Z
b
e
2
b
b
1
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
18.5
17.8
max.
3.7
2
A
8.7
8.0
A
3
4
15.8
15.4
b
0.67
0.50
b
1
2
1.40
1.14
bcD
1.40
1.14
0.48
0.38
21.8
21.4
(1)
D
1
21.4
20.7
A
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
IEC JEDEC EIAJ
REFERENCES
SOT110-1
w M
(1)
E
eLPP
6.48
6.20
2.54
3.9
3.4
L
c
Q
(1)
w
0.25
Z
max.
1.0
2.75
2.50
1
3.4
3.2
q
Q
1.75
15.1
1.55
14.9
EUROPEAN
PROJECTION
q1q
2
5.9
4.4
5.7
4.2
ISSUE DATE
92-11-17
95-02-25
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Philips Semiconductors Product specification
1 to 4 W audio power amplifier TDA1015
SOLDERING
Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and
surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for
surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often
used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook”
Soldering by dipping or by wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the
joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
be necessary immediately after soldering to keep the temperature within the permissible limit.
(order code 9398 652 90011).
). If the printed-circuit board has been pre-heated, forced cooling may
stg max
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more
than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1982 13
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