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Dual N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
BV
DSS
DGS
/R
DS(ON)
(max) (max) (min) SO-8
V
GS(th)
I
D(ON)
240V 6.0Ω 2.0V 1.0A TD9944TG
Order Number/Package
TD9944
Low Threshold
Features
❏ Dual N-channel devices
❏ Low threshold — 2.0V max.
❏ High input impedance
❏ Low input capacitance — 125pF max.
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
Telecom switches
Low Threshold DMOS Technology
These dual low threshold enhancement-mode (normally-off)
transistors utilize a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Pin Configuration
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
DSS
DGS
S
1
1
2
G
1
3
S
2
4
G
2
SO-8
top view
D
8
1
7
D
1
6
D
2
5
D
2
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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Electrical Characteristics (each device, @ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage 240 V VGS = 0V, ID = 2mA
Gate Threshold Voltage 0.6 2.0 V VGS = VDS, ID= 1mA
Change in V
with Temperature -5.0 mV/°CVGS = VDS, ID= 1mA
GS(th)
Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAV
1.0 mA V
ON-State Drain Current 0.5 1.9 VGS = 4.5V, VDS = 25V
A
1.0 2.8 V
Static Drain-to-Source
ON-State Resistance
Change in R
with Temperature 1.4 %/°CVGS = 10V, ID = 0.5A
DS(ON)
Forward Transconductance 300 600 m VDS = 25V, ID = 0.5A
4.0 6.0 Ω VGS = 4.5V, ID = 250mA
4.0 6.0 V
Ω
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
= 125°C
T
A
= 10V, VDS = 25V
GS
= 10V, ID = 0.5A
GS
Input Capacitance 65 125
Common Source Output Capacitance 35 70 pF
VGS = 0V, VDS = 25V
f = 1 MHz
Reverse Transfer Capacitance 10 25
Turn-ON Delay Time 10
Rise Time 10
Turn-OFF Delay Time 20
ns I
VDD = 25V,
= 1.0A,
D
R
= 25Ω
GEN
Fall Time 20
Diode Forward Voltage Drop 1.8 V VGS = 0V, ISD = 1.0A
Reverse Recovery Time 300 ns VGS = 0V, ISD = 1.0A
TD9944
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
TD9944
Output Characteristics
4.0
3.2
2.4
(amperes)
1.6
D
I
0.8
0
0102030 5040
VDS(volts)
BV
Variation with Temperature
DSS
1.1
VGS= 10V
8V
6V
4V
3V
2V
Saturation Characteristics
2.5
2.0
1.5
1.0
(amperes)
D
I
0.5
0
0246 108
VDS(volts)
On-Resistance vs. Drain Current
10
8
VGS= 4.5V
VGS= 10V
8V
6V
4V
3V
2V
1.0
DSS
BV (normalized)
0.9
-50 0 50 100 150
C)°(T
j
Transfer Characteristics
3.0
2.5
VDS= 25V
= -55°C
T
A
2.0
1.5
(amperes)
D
I
1.0
0.5
0
0246810
V
GS
25°C
150°C
(volts)
6
(ohms)
4
DS(ON)
R
2
0
0123 54
(amperes)
I
D
V
and R Variation with Temperature
DS(th)
1.4
VGS= 10V
R
1.2
1.0
GS(th)
0.8
V (normalized)
0.6
-50 0 50 100 150
V @ 1mA
(th)
T
DS(ON)
C)°(
j
@ 10V, 0.5A
2.4
2.0
1.6
1.2
0.8
0.4
DS(ON)
R (normalized)
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Typical Performance Curves
TD9944
Capacitance vs. Drain-to-Source Voltage
200
f = 1MHz
150
100
C (picofarads)
50
C
C
C
0
010203040
VDS(volts)
Transconductance vs. Drain Current
1.0
0.8
0.6
(siemens)
0.4
FS
G
TA = -55°C
TA = 25°C
TA = 150°C
VDS= 25V
ISS
OSS
RSS
Gate Drive Dynamic Characteristics
10
8
6
VDS= 10V
(volts)
GS
4
V
2
0
0 0.4 0.8
63pF
1.2
Q (nanocoulombs)
G
Power Dissipation vs. AmbientTemperature
2.0
TO-243AA
1.0
D
P (watts)
VDS= 40V
150 pF
1.6 2.0
0.2
0
0 4.00.8 1.6 2.4 3.2
ID(amperes)
Maximum Rated Safe Operating Area
10
TA = 25°C
TO-243AA (pulsed)
1.0
(amperes)
D
I
0.1
TO-243AA (DC)
0.01
1 100010010
VDS(volts)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
0
0 15010050
1257525
TCC)°(
Thermal Response Characteristics
1.0
0.8
0.6
TO-243AA
P
= 0.55W
0.4
0.2
D
T
= 25
C°
C
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1
tp(seconds)
12/13/010
1235 Bordeaux Drive, Sunnyvale, CA 94089
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TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
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