Datasheet TD350 Datasheet (STMicroelectronics)

TD350

Advanced IGBT/MOSFET Driver

■ 0.75A source/1.2A sink min gate drive

■ Active Miller clamp feature

■ Two steps turn-off with adjustable level

and delay

■ Desaturation detection

■ Fault status output

■ Negative gate drive ability

■ Input compatible with pulse transformer or

optocoupler

■ Separate sink and source outputs for easy

gate dr i ve

■ UVLO protection

■ 2kV ESD protection

Description

TD350 is an advanced gate driver for IGBT and
power MOSFET. Control and protection functions
are included and allow the design of high reliability
systems.

Innovative active Miller clamp function avoids the
need of negative gate drive in most applications
and allows th e use of a simple bo otstrap supply
for the high side driver

TD350 includes a two-level turn-off feature with
adjustable level and delay. This function protects
against excessive overvoltag e at turn-off in case
of overcurrent or short-circuit condition. Same
delay is applied at turn-on to prevent pulse width
distortion.
TD350 also includes an IGBT desaturation
protection and a FAULT status output.

TD350 is compat ible with both pulse transformer
and optocoupler signals.

Applications

■ 1200V 3-Phase Inverter

■ Motor C

ontrol

■ UPS Systems

D

SO-14

(Plastic MicroPacka ge)

Pin Connections (top view )

1

IN

VREF

FAULT

NC

COFF

NC

LVOFF

2

3

4

5

6

7

TD350

14

11

13

12

10

DESAT

VH

OUTH

OUTL

VL

9

CLAMP

8

GND

Order Codes

Part Number Temperature Range Package Packaging

TD350ID

TD350IDT Tape & Reel

August 2004 Revision 1 1/11

-40, +125°C SO

Tube

TD350 Block Diagram

1 Block Diagram

Figure 1: Sche m atic block diagram

Vref

Off

UVLO

DESAT

Desat

Control Block

VH

OUTH

OUTL

VL

CLAMP

GND

16V

Optionnal

-10V

Pulse Transformer

VH

Vref

Vref

VH

IN

VREF

FAULT

NC

COFF

NC

LVOFF

Vref

delay

Off Level

TD350

Table 1: Pin description

Name Pin Number Type Function

IN 1 Analog input Input
VREF 2 Analog output +5V reference voltage
FAULT 3 Digital output Fault status output
NC 4 Not connected
COFF 5 Timing capacitor Turn off delay
NC 6 Not connected
LVOFF 7 Analog input Turn off level
GND 8 Power supply Signal ground
CLAMP 9 Analog output Miller clamp
VL 10 Power supply Negative supply
OUTL 11 Analog output Gate drive output (sink)
OUTH 12 Analog output Gate drive output (source)
VH 13 Power supply Positive supply
DESAT 14 Analog input Desaturation protection

2/11

Absolute Maximum Ratin gs TD350

2 Absolute Maximum Rat ings

Table 2: Key parameters and their absolute maximum ratings

Symbol Parameter Value Unit

VHL Maximum Supply Voltage (VH - VL) 28 V

VH Maximum VH voltage vs. GND 28 V

VL Minimum VL voltage vs. GND -12 V

Vout Voltage on OUTH, OUTL, CLAMP pins VL-0.3 to VH+0.3 V

Vdes Voltage on DESAT, FAULT, LVOFF pin -0.3 to VH+0.3 V

Vter Voltage on other pins (IN, COFF, VREF) -0.3 to 7 V

Pd Power dissipation 500 mW

Tstg Storage temperature -55 to 150 °C

Tj Maximum Junction Temperature 150 °C

Rhja Thermal Resis tance Junction-A mbie nt 125 °C/W

Rhjc The rmal Resis tance Junction-C ase 22 °C/W

ESD Electrostatic discharge 2 kV

Table 3: Operat in g conditions

Symbol Parameter Value Unit

VH Positive Supply Voltage vs. GND UVLO to 26 V

VL Negative Supply Voltage vs. GND 0 to -10 V

VH-VL Maximum Total Supply Voltage 26 V

Toper Operating Free Air Temperature Range -40 to 125 °C

3/11

TD350 Electrical Characteristics

3 Electrical Characteristics

Table 4: T

Symbol Parameter Test Condi t io n Min Ty p Max Unit

Input

Vton IN turn-on threshold voltage 0.8 1.0 V
Vtoff IN turn-off threshold voltage 4.0 4.2 V

tonmin Minimum pulse width 100 135 220 ns

Iinp IN Input current 1

Voltage reference - note

Vref Voltage reference

Iref Maximum output current 10 mA

Desaturation protection

Vdes Desaturation threshold 6.5 7.2 7.9 V

Ides Source current 250

Fault output

tfault Delay for fault detection 500 ns

VFL FAULT low voltage Ifsink=10mA 1 V

Clamp

Vtclamp CLAMP pin voltage threshold 2.0 V

VCL Clamp low voltage at Icsink=500mA

Off Delay

Vtdel Voltage threshold 2.35 2.50 2.65 V

Rdel Disch arge resisto r I=1mA 500

Off Levels

Iblvoff LVOFF peak input current (sink) LVOFF=12V 120 200

Violv Offset voltage LVOFF=12V -0.3 -0.15 0 V

Outputs

VOL1 Output low voltage at Iosink=20mA VL+0.35 V
VOL2 Output low voltage at Iosink=200mA

VOL3 Output low voltage at Iosink=500mA

VOH1 Output high voltage 1 Iosource=20mA VH-2.5 V
VOH2 Output high voltage 2 Iosource=200mA VH-3.0 V
VOH3 Output high voltage 3 Iosource=500mA VH-4.0 V

tr Rise time

tf

tpd

∆tw Input to output pulse distortion 10% output change 10 60 110 ns

Under Voltage Lockout (UVLO)

UVLOH UVLO top threshold 10 11 12 V

UVLOL UVLO bottom threshold 9 10 11 V

Vhyst UVLO hysteresis UVH-UVL 0.5 1 V

Supply current

Iin Quiescent current output=0V, no load 5 mA

1) Recommended capac itor range on VR E F pi n i s 10nF to 100nF.

4/11

= -20 to 125°C, VH=16V, VL=-10V (unless otherwise spe cified)

amb

1

T=25°C
Tmin<T<Tmax

T=25°C
Tmin<T<Tmax

T=25°C
Tmin<T<Tmax

T=25°C
Tmin<T<Tmax

CL=1nF, 10% to 90%
VL=0
VL=-10V

Fall time
(2 step turn-off disabled)

Input to output propagation delay at
turn-on (2 step delay disabled)

CL=1nF, 90% to 10%
VL=0
VL=-10V

10% output change

4.85

4.77

270 800 ns

5.00 5.15

5.22

VL+2.5
VL+3.0

VL+1.0
VL+1.5

VL+2.5
VL+3.0

130
175

75
90

µA

V
V

µA

V
V

Ω

µA

V
V

V
V

ns
ns

ns
ns

Functional Description TD350

4 Functional Description

4.1 Input

The input is compatible with optocouplers or pulse
transformers. The input is triggered by the signal
edge and allows the use of low-sized, low-cost
pulse transformer. Input is active low (output is
high when input is low) to ease the use of
optocoupler. When driven by a pulse transformer,
the input pulse (positive and negative) width must
be larger than the minimum pule width t

onmin

.

4.2 Voltage reference

A voltage reference is used to create accurate
timing for the two-level turn-off with external
resistor and capacitor.

4.3 Desaturation protection

Desaturation protection e nsures the protection of
the IGBT in the event of overcurrent. When the
DESAT voltage goes higher that 7V, the output is
driven low (w ith 2 -le vel t urn- off if a pp licable ). T he
FAULT output is activated. The FAULT state is
exited at the next falling edge of IN input.

A programmable blanking time is used to allow
enough time for IGBT saturation. Blanking time is
provided by an internal current source and
external capacitor.

DESAT input can also be used with an external
comparator for overcurrent or over temperature
detection.

4.4 Active Miller clamp

A Miller clamp allows the control of the Miller
current during a high dV/dt situation and can avoid
the use of a negative supply voltage.

During turn-off, the gate voltage is monitored a nd
the clamp output is activated when g ate voltage
goes below 2V (relative to GND). The clamp
voltage is VL+3V max for a Miller current up to
500mA. The cla mp is disabled w hen the IN input
is triggered again.

4.5 Two level turn-off

The two-level turn-off is used to increase the
reliability of the application.

During turn-off, gate voltage can be reduc ed to a
programmable leve l in order to reduce the IGBT
current (in the event of over-current). This action
avoids both dangerous overvoltage across the
IGBT, and RBSOA problems, especially at short
circuit turn-off.

Turn-off (T

) delay is programmable through an

a

external resistor and capacitor for accurate timing.
Turn-off delay (T

) is also used to delay t he input

a

signal to prevent distortion of input pulse width.

4.6 Minimum ON t ime

In order to ensure the proper operation of the 2­level turn-off function, the input ON time (T
must be greater than the T

T

winmin=Ta

R

is the internal discharge resistor and C

del

+2*R

del*Coff

winmin

value:

off

win

is

the external timing capacitor.
Input signals smaller than Ta are ignored. Input

signals larger than T
output stage after the T
width distortion (

∆T

w=Twout-Twin

For an input signal width T
T
T

, the output width T

winmin

(pulse distortion) and the IGBT could be

win

are transmitted to the

winmin

delay with minimum

a

).
between Ta and

win

is reduced below

wout

partially turned on. These input signa ls should be
avoided during normal operation.

4.7 Output

The output stage is able to sink 2.3A and source

1.5A typical at 25°C (1.2A/0.75A minimum over
the full temperature range). Separated sink and
source outputs allow independent gate charge
and discharge control without an extra external
diode.

)

5/11

TD350 Functional Description

4.8 Fault status output

Fault output is used to signal a fault event
(desaturation, UVLO) to a controller. The fault pin
is designed to drive an optocoupler.

4.9 Undervoltage protection

Undervoltage detection protects t he application in
the event of a low VH supply voltage (during start­up or a fault situation). During undervoltage, the
OUTH pin is open and the OUTL pin is driven l ow
(active pull-down for VH>2V, passive pull-down

Figure 2: Detailed Internal Schematic

IN

Comp_Input

Delay

1V-4V

for VH<2V). Fault output s ignals the und ervo ltage
state and is reset only when undervoltage state
disappears.

VH

OUT

FAULT

UVLO

UVH

Vref

VH

250uA

VREF

UVL
Vccmin

2V

COFF

LVOFF

Comp_Desat

7.2V

DESAT

Control Block

Vref

Comp_DelayOff

2.5V

S2

VH

Comp_Clamp

2V

2-level OF F driver

FAULT

CLAMP

VH

OUTH

OUTL

VL

GND

6/11

rev. 3

Timing Diagrams TD350

5 Timing Diagrams

Figure 3: Turn-on and turn-off

IN

COFF

Ta

OUT

CLAMP

Vge

Vce

VL level

Figure 4: Minim um ON time

Tin<Ta Tin>Twinmin

IN

2.5V

COFF

Ta<Tin<Twinmin

Twin

Ta

VH level

Twout

Open

VH level

Miller plateau

Ta

Ta Ta

VH level

LVOFF

VL level

Clamp threshold

LVOFF

OUT

CLAMP

Figure 5: Desaturation fault

IN

COFF

OUT

DESAT

FAULT

Ta

Open

2.5V

Ta

Desat Blanking Time

VL level

Ta

VH level

LVOFF

VL level

7V

open

7/11

TD350 Typical Performance Curves

6 Typical Performance Curves

Figure 6: Supply current vs temperature

5.0

4.0

3.0

In (mA)

2.0

1.0

0.0

-50-250 255075100125

Temp (°C)

Figu re 7: Lo w le vel output v oltag e v s te mp.

3.0

3.0

2.0

2.0

Iosink=500mA

Iosink=500mA

VOL-VL (V)

VOL-VL (V)

1.0

1.0

Iosink=200mA

Iosink=200mA

Figure 9: Voltage reference vs temper ature

5.20

5.10

5.00

Vref (V)

4.90

4.80

-50 -25 0 25 50 75 100 125

Temp (°C)

Figure 10: High level output voltage vs temp.

4.0

4.0

3.0

3.0

Iosource=500mA

Iosource=500mA

2.0

2.0

VH-VOH ( V)

VH-VOH ( V)

1.0

1.0

Iosource=200mA

Iosource=200mA

Iosource=20mA

Iosource=20mA

Iosink=20mA

0.0

0.0

-50 -25 0 25 50 75 100 125

-50 -25 0 25 50 75 100 125

Temp (°C)

Temp (°C)

Iosink=20mA

Figure 8: Desaturation threshold vs

temperature

10

9

8

Vdes (V)

7

6

5

-50 -25 0 25 50 75 100 125

Temp (°C)

8/11

0.0

0.0

-50 -25 0 25 50 75 100 125

-50 -25 0 25 50 75 100 125

Temp (°C)

Temp (°C)

Figure 11: Desaturation source current vs

temp.

500

400

300

200

Ides (uA)

100

0

-50 -25 0 25 50 75 100 125

Temp (°C)

Application Diagrams TD350 7 Application Diagrams

Figure 12: Single supply IGBT drive with active Miller clamp and 2-level turn-off

VH

Vref

VH

5.1V

Vref

IN

VREF

FAULT

NC

COFF

NC

LVOFF

Vref

Off Level

Off

delay

UVLO

DESAT

Desat

Control Block

VH

OUTH

OUTL

VL

CLAMP

GND

16V

TD350

Figure 13: Large IGBT drive with negative gate drive and desaturation detection

Vref

Off

delay

UVLO

DESAT

Desat

Control Block

VH

OUTH

OUTL

VL

CLAMP

16V

-10V

Pulse Transform er

VH

Vref

Vref

IN

VREF

FAULT

NC

COFF

NC

Vref

VH

LVOFF

Off Level

GND

TD350

Figure 14: Use of DESAT input for direct overcurrent detection

Vref

Off

delay

UVLO

TD350

DESAT

Desat

Control Block

VH

OUTH

OUTL

VL

CLAMP

GND

16V

Pulse Transform er

VH

Vref

VH

Vref

IN

VREF

FAULT

NC

COFF

NC

LVOFF

Vref

Off Level

Vref

9/11

TD350 PACKAGE MECHANICAL DATA

8 PACKAGE MECHANICAL DATA

SO-14 MECHANICAL DATA

DIM.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.019
c1 45˚ (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S˚ (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8

10/11

PO13G

Revision History TD350

9 Revision History

Date Revision Description of Changes

01 August 2004 1 First Release

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to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics produc ts are not
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11/11