Page 1
TCST1000/ TCST2000
Vishay Telefunken
Transmissive Optical Sensor without Aperture
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
B)
Applications
D
Contactless optoelectronic switch,
control and counter
Features
D
Compact construction
D
No setting efforts
D
2 case variations
D
Polycarbonate case protected against
ambient light
D
Current Transfer Ratio (CTR) of typical 2.5%
A
C
+
5.50
0.22”
Top view
+
A)
15134
95 10795
E
C
Order Instruction
Ordering Code Resolution (mm) / Aperture (mm) Remarks
TCST1000
TCST2000
Rev. A3, 08–Jun–99
A)
B)
0.6 / non No mounting flags
0.6 / non With two mounting flags
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1 (8)
Page 2
TCST1000/ TCST2000
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp /T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CEO
ECO
C
CM
V
6 V
60 mA
3 A
100 mW
j
100
°
C
70 V
7 V
100 mA
200 mA
150 mW
j
100
°
C
Coupler
Parameter Test Conditions Symbol Value Unit
Total power dissipation T
≤ 25°C P
amb
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 5 s T
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 60 mA V
Junction capacitance VR = 0, f = 1 MHz C
F
j
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 10 mA V
Collector dark current VCE = 25 V, IF = 0, E = 0 I
CEO
ECO
CEO
70 V
7 V
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector current VCE = 5 V, IF = 20 mA I
Collector emitter saturation
IF = 20 mA, IC = 25 mA V
voltage
Resolution, path of the
I
= 10/90% 0.6 mm
Crel
shutter crossing the radiant
sensitive zone
C
CEsat
0.25 0.5 mA
tot
amb
stg
sd
250 mW
–55 to +85
–55 to +100
260
1.25 1.5 V
50 pF
100 nA
°
°
°
0.4 V
C
C
C
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2 (8) Rev. A3, 08–Jun–99
Document Number 83762
Page 3
TCST1000/ TCST2000
Vishay Telefunken
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Turn-on time VS = 5 V, IC = 1 mA, RL = 100 W (see figure 1) t
S C L
Turn-off time
on
t
off
15.0
10.0
m
s
m
s
0
RG = 50 W
t
p
= 0.01
T
tp = 50 ms
95 10890
W
+ 5 V
= 2 mA;
I
C
Channel I
Channel II
adjusted through
input amplitude
Oscilloscope
R
y 1 M
W
L
C
x 20 pF
L
I
F
0
I
C
100%
90%
10%
0
t
r
t
d
t
on
t
p
t
d
t
r
t
(= td + tr) turn-on time
on
pulse duration
delay time
rise time
t
p
t
s
t
off
t
s
t
f
t
(= ts + tf) turn-off time
off
I
I
F
F
50
W
100
Figure 1. Test circuit
t
f
96 11698
t
t
storage time
fall time
Figure 2. Switching times
Rev. A3, 08–Jun–99
www.vishay.comDocument Number 83762
3 (8)
Page 4
TCST1000/ TCST2000
Vishay Telefunken
Typical Characteristics (T
400
300
Coupled device
200
Phototransistor
IR-diode
100
tot
P – Total Power Dissipation ( mW )
0
0 30 60 90 120
95 11088
1000.0
100.0
T
– Ambient Temperature ( °C )
amb
Figure 3. Total Power Dissipation vs.
Ambient Temperature
= 25_C, unless otherwise specified)
amb
10000
VCE=25V
I
=0
F
10
1
0255075
T
amb
150
1000
100
with open Base ( nA )
CEO
I – Collector Dark Current,
95 11090
Figure 6. Collector Dark Current vs. Ambient Temperature
10
VCE=5V
1
100
– Ambient Temperature ( °C )
10.0
1.0
F
I – Forward Current ( mA )
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
Figure 4. Forward Current vs. Forward Voltage
2.0
VCE=5V
I
=20mA
F
1.5
1.0
0.5
rel
CTR – Relative Current Transfer Ratio
0
95 11089
–25 0 25 50
T
– Ambient Temperature ( °C )
amb
75
100
0.1
0.01
C
I – Collector Current ( mA )
0.001
0.1 1 10
95 11083
IF – Forward Current ( mA )
Figure 7. Collector Current vs. Forward Current
10
IF=50mA
C
I – Collector Current ( mA )
95 11084
1
0.1
0.01
0.1 1 10
V
– Collector Emitter Voltage ( V )
CE
20mA
10mA
5mA
2mA
100
100
Figure 5. Relative Current Transfer Ratio vs.
Figure 8. Collector Current vs. Collector Emitter Voltage
Ambient Temperature
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4 (8) Rev. A3, 08–Jun–99
Document Number 83762
Page 5
TCST1000/ TCST2000
Vishay Telefunken
100
VCE=5V
10
1
CTR – Current Transfer Ratio ( % )
95 11085
0.1
0.1 1 10
IF – Forward Current ( mA )
100
Figure 9. Current Transfer Ratio vs. Forward Current
20
m
15
10
Non Saturated
Operation
V
=5V
S
R
=100
W
L
110
100
90
80
70
60
50
40
30
20
Crel
I – Relative Collector Current
10
0
–0.5–0.4–0.3–0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
0
s
s – Displacement ( mm )15141
Figure 11. Relative Collector Current vs. Displacement
t
on
t
off
10
8
off
on
t / t – Turn on / Turn off Time ( s )
95 11086
5
0
02 46
I
– Collector Current ( mA )
C
Figure 10. Turn on / off Time vs. Collector Current
Rev. A3, 08–Jun–99
www.vishay.comDocument Number 83762
5 (8)
Page 6
TCST1000/ TCST2000
Vishay Telefunken
Dimensions of TCST1000 in mm
96 12099
www.vishay.com
6 (8) Rev. A3, 08–Jun–99
Document Number 83762
Page 7
Dimensions of TCST2000 in mm
TCST1000/ TCST2000
Vishay Telefunken
Rev. A3, 08–Jun–99
96 12098
www.vishay.comDocument Number 83762
7 (8)
Page 8
TCST1000/ TCST2000
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8 (8) Rev. A3, 08–Jun–99
Document Number 83762
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