Datasheet NTE49, TCG50, TCG49, NTE50 Specification

NTE49 (NPN) & NTE50 (PNP)

Silicon Complementary Transistors

General Purpose, High Voltage Amp, Driver

Description:

The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case
designed for general purpose, high voltage amplifier and driver applications.

Features:

D High Collector Breakdown Voltage: V

D High Power Dissipation: P

= 10W @ TC = +25C

D

(BR)CEO

Absolute Maximum Ratings:

Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T

CEO

CB

EB

C

= +25C), P

A

D

Derate Above 25C 8mW/C.......................................................

Total Power Dissipation (TC = +25C), P

D

Derate Above 25C 80mW/C......................................................

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction−to−Case, R

J

thJC

Thermal Resistance, Junction−to−Ambient, R

= 100V Min @ IC = 1mA

thJA

100V.....................................................

120V........................................................

4V...........................................................

2A......................................................

1W..............................................

10W............................................

−55 to +150C..................................

−55 to +150C..........................................

12.5C/W....................................

125C/W..................................

Rev. 5−13

Electrical Characteristics: (TA = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector−Emitter Breakdown Voltage V

Emitter−Base Breakdown Voltage V

Collector Cutoff Current I

(BR)CEOIC

(BR)EBOIE

CBO

= 1mA, IB = 0 100 − − V

= 100A, IC = 0 4 − − V

VCB = 40V, IE = 0 − − 100 nA

ON Characteristics (Note 2)

DC Current Gain h

FE

IC = 50mA, VCE = 1V 80 125 −

IC = 250mA, VCE = 1V 60 100 −

IC = 500mA, VCE = 1V − 55 −

Collector−Emitter Saturation Voltage V

CE(sat)IC

= 250mA, IB = 10mA − 0.18 0.4 V

IC = 250mA, IB = 25mA − 0.1 − V

Base−Emitter ON Voltage V

BE(on)IC

= 250mA, VCE = 5V − 0.74 1.2 V

Small−Signal Characteristics

Current Gain−Bandwidth Product f

T

IC = 250mA, VCE = 5V,
f = 100MHz, Note 1

Output Capacitance C

ob

VCB = 10V, IE = 0, f = 100kHz − 6 12 pF

Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.

50 150 − MHz

C

.500

(12.7)

1.200

(30.48)

Ref

.300

(7.62)

.400

(10.16)

Min

EBC

.100 (2.54) .100 (2.54)

.132 (3.35) Dia

.325

(9.52)

.180 (4.57).380 (9.56)

.070 (1.78) x 45

Chamf

.050 (1.27)