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NTE357
Silicon NPN Transistor
RF Power Output
PO = 7W @ 175MHz
Description:
The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in
the 125−175MHz frequency range.
Features:
D Specified 28V, 175MHz Characteristics −
Output Power = 7.0 Watts
Minimum Gain = 8.4dB
Efficiency = 60%
D Characterized from 125 to 175MHz
D Includes Series Equivalent Impedances
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current−Continuous, I
Total Device Dissipation (TC = +25°C), P
CEO
CB
EB
C
D
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
86mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown
Voltage
Collector−Emitter Breakdown
V
(BR)CEOIC
V
(BR)CESIC
= 200mAdc, IB = 0,
(Note 1)
= 200mAdc, VBE = 0 65 − − Vdc
Voltage
Note 1. Pulsed through 25mH inductor
35 − − Vdc
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter−Base Breakdown
V
(BR)EBOIE
Voltage
Collector Cut−Off Current I
CBO
VCB = 30Vdc, IE = 0 − − 1 mAdc
ON Characteristics
DC Current Gain h
FE
IC = 100mAdc, VCE = 5Vdc 5 − −
Dynamic Characteristics
Output Capacitance C
ob
VCB = 30Vdc, IE = 0,
f = 0.1 to 1.0MHz
Functional Test
Common−Emitter Amplifier
Power Gain
G
PE
P
f = 175MHz
Collector Efficiency η P
f = 175MHz
1.065 (27.08) Max
= 5mAdc, IC = 0 4 − − Vdc
− 8.5 15 pf
= 7W, VCE = 28Vdc,
OUT
= 7W, VCE = 28Vdc,
OUT
.530
(13.46)
C
8.4 12.5 − dB
60 − − %
.005 (0.15)
E
.030 (.762)
.090 (2.28)
.325 (8.28) Dia
8−32 NC−3A
Wrench Flat
.220
(5.58)
E
.305
(7.75)
B
.375 (9.52) Dia
.260 (6.60)
.075
(1.94)
.115 (2.92)
.730
(18.54)
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