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NTE182 (NPN) & NTE183 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 10A
D High Current Gain−Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I
C
B
Total Device Dissipation (TC = +25°C), P
CEO
CB
EB
D
Derate Above 25°C 0.72W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction−to−Case, R
J
thJC
−55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.39°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus)IC
CEO
I
CEX
I
CBO
EBO
= 200mA, IB = 0, Note 1 60 − − V
VCE = 30V, IB = 0 − − 700 µA
VCE = 70V, V
VCE = 70V, V
T
= +150°C
C
VCB = 70V, IE = 0 − − 1.0 mA
VCB = 70V, IE = 0, TC = +150°C − − 10 mA
VBE = 5V, IC = 0 − − 5.0 mA
= 1.5V − − 1.0 mA
BE(off)
= 1.5V,
BE(off)
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
− − 5.0 mA
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Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
FE
IC = 4A, VCE = 4V 20 − 100
IC = 10A, VCE = 4V 5.0 − −
Base−Emitter ON Voltage V
Collector−Emitter Saturation Voltage V
BE(on)IC
CE(sat)IC
= 4A, VCE = 4V − − 1.8 V
= 4A, IB = 400mA − − 1.1 V
IC = 10A, IB = 3.3A − − 8.0 V
Dynamic Characteristics
Current Gain−Bandwidth Product f
T
IC = 500mA, VCE = 10V,
f = 1MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
.530 (13.4) Max
2.0 − − MHz
.143 (3.65) Dia Thru
.668
(17.0)
Max
.166 (4.23)
EBC
.655
(16.6)
Max
C (Heat Sink Area)
Area (Bottom)
.150 (3.82) MaxHeat Sink Contact
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