Page 1
TCET110.(G) up to TCET4100
Vishay Telefunken
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Document Number 83503
Rev. A6, 08–Sep–99
1 (11)
Optocoupler with Phototransistor Output
Description
The TCET110./ TCET2100/ TCET4100 consists of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4-lead up to 16-lead plastic
dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced
isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according to
the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
RMS
)
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
14925
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
13929
C
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2 (11)
Document Number 83503
Rev. A6, 08–Sep–99
Order Instruction
Ordering Code CTR Ranking Remarks
TCET1100/ TCET1100G
1)
50 to 600% 4 Pin = Single channel
TCET1101/ TCET1101G
1)
40 to 80% 4 Pin = Single channel
TCET1102/ TCET1102G
1)
63 to 125% 4 Pin = Single channel
TCET1103/ TCET1103G
1)
100 to 200% 4 Pin = Single channel
TCET1104/ TCET1104G
1)
160 to 320% 4 Pin = Single channel
TCET1105/ TCET1105G
1)
50 to 150% 4 Pin = Single channel
TCET1106/ TCET1106G
1)
100 to 300% 4 Pin = Single channel
TCET1107/ TCET1107G
1)
80 to 160% 4 Pin = Single channel
TCET1108/ TCET1108G
1)
130 to 260% 4 Pin = Single channel
TCET1109/ TCET1109G
1)
200 to 400% 4 Pin = Single channel
TCET2100 50 to 600% 8 Pin = Dual channel
TCET4100 50 to 600% 16 Pin = Quad channel
1)
G = Leadform 10.16 mm; G is not marked on the body
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 11027
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection
D
CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection
D
VDE 0884, Certificate number 115667
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
V
IOTM
= 8 kV peak
D
Isolation test voltage
(partial discharge test voltage) V
pd
= 1.6 kV
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
RMS
(848 V peak)
D
Rated recurring peak voltage (repetitive)
V
IORM
= 600 V
RMS
D
Creepage current resistance according
to VDE 0303/IEC 112
Comparative Tracking Index: CTI ≥ 175
D
Thickness through insulation ≥ 0.75 mm
D
Internal creepage distance > 4 mm
General features:
D
CTR offered in 9 groups
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 / resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCET2100/ TCET4100 optional;
suffix letter ‘G’ is not marked on the optocoupler
D
Coupling System U
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Document Number 83503
Rev. A6, 08–Sep–99
3 (11)
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
R
6 V
Forward current I
F
60 mA
Forward surge current tp ≤ 10 ms I
FSM
1.5 A
Power dissipation T
amb
≤ 25°C P
V
100 mW
Junction temperature T
j
125
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7 V
Collector current I
C
50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
CM
100 mA
Power dissipation T
amb
≤ 25°C P
V
150 mW
Junction temperature T
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1 min V
IO
5 kV
Total power dissipation T
amb
≤ 25°C P
tot
250 mW
Operating ambient temperature
range
T
amb
–40 to +100
°
C
Storage temperature range T
stg
–55 to +125
°
C
Soldering temperature 2 mm from case t ≤ 10 s T
sd
260
°
C
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Document Number 83503
Rev. A6, 08–Sep–99
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = ± 50 mA V
F
1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz C
j
50 pF
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
CEO
70 V
Emitter collector voltage IE = 100 mA V
ECO
7 V
Collector emitter cut-off
current
VCE = 20 V, If = 0, E = 0 I
CEO
10 100 nA
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
IF = 10 mA, IC = 1 mA V
CEsat
0.3 V
Cut-off frequency VCE = 5 V, IF = 10 mA,
R
L
= 100
W
f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
Current Transfer Ratio (CTR)
Parameter T est Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 5 mA TCET1100(G)/
TCET2100/
TCET4100
CTR 0.50 6.0
IC/I
F
VCE = 5 V, IF = 10 mA TCET1101(G) CTR 0.40 0.8
C F
CE F
TCET1102(G) CTR 0.63 1.25
TCET1103(G) CTR 1.0 2.0
TCET1104(G) CTR 1.6 3.2
IC/I
F
VCE = 5 V, IF = 1 mA TCET1101(G) CTR 0.13 0.30
C F
CE F
TCET1102(G) CTR 0.22 0.45
TCET1103(G) CTR 0.34 0.70
TCET1104(G) CTR 0.56 0.90
IC/I
F
VCE = 5 V, IF = 5 mA TCET1105(G) CTR 0.5 1.5
C F
CE F
TCET1106(G) CTR 1.0 3.0
TCET1107(G) CTR 0.8 1.6
TCET1108(G) CTR 1.3 2.6
TCET1109(G) CTR 2.0 4.0
Page 5
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Document Number 83503
Rev. A6, 08–Sep–99
5 (11)
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current I
si
130 mA
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation T
amb
≤ 25°C P
si
265 mW
Coupler
Parameters Test Conditions Symbol V alue Unit
Rated impulse voltage V
IOTM
8 kV
Safety temperature T
si
150
°
C
Insulation Rated Parameters (according to VDE 0884)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage –
Routine test
100%, t
test
= 1 s V
pd
1.6 kV
Partial discharge test voltage – tTr = 60 s, t
test
= 10 s, V
IOTM
8 kV
gg
Lot test (sample test)
Tr test
(see figure 2)
V
pd
1.3 kV
Insulation resistance VIO = 500 V R
IO
10
12
W
VIO = 500 V,
T
amb
= 100°C
R
IO
10
11
W
VIO = 500 V,
T
amb
= 150°C
(construction test only)
R
IO
10
9
W
0 25 50 75 125
0
50
100
150
200
300
P – Total Power Dissipation ( mW )
tot
Tsi – Safety Temperature ( °C )
150
94 9182
100
250
Phototransistor
Psi ( mW )
IR-Diode
Isi ( mA )
Figure 1. Derating diagram
t
13930
t1, t2 = 1 to 10 s
t
3
, t4 = 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
Pd
V
IOWM
V
IORM
0
t
1
t
test
tTr = 60 s
t
stres
t3t
4
t
2
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
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Document Number 83503
Rev. A6, 08–Sep–99
Switching Characteristics
Parameter T est Conditions Symbol Typ. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 W (see figure 3) t
d
3.0
m
s
Rise time
S C L
(g)
t
r
3.0
m
s
Turn-on time t
on
6.0
m
s
Storage time t
s
0.3
m
s
Fall time t
f
4.7
m
s
Turn-off time t
off
5.0
m
s
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 4) t
on
9.0
m
s
Turn-off time
S F L
(g)
t
off
10.0
m
s
Channel I
Channel II
95 10804
Oscilloscope
R
L
= 1 M
W
C
L
= 20 pF
R
G
= 50 W
t
p
t
p
= 50 ms
T
= 0.01
+ 5 V
I
C
= 2 mA;
adjusted through
input amplitude
I
F
0
I
F
50
W
100
W
Figure 3. Test circuit, non-saturated operation
+ 5 V
IF = 10 mA
95 10843
I
C
Channel I
Channel II
Oscilloscope
R
L
> 1 M
W
C
L
< 20 pF
I
F
0
R
G
= 50 W
t
p
t
p
= 50 ms
T
= 0.01
50
W
1 k
W
Figure 4. Test circuit, saturated operation
t
p
t
t
0
0
10%
90%
100%
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
96 11698
t
p
pulse duration
t
d
delay time
t
r
rise time
t
on
(= td + tr) turn-on time
t
s
storage time
t
f
fall time
t
off
(= ts + tf) turn-off time
Figure 5. Switching times
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Typical Characteristics (T
amb
= 25_C, unless otherwise specified)
0
50
100
150
200
250
300
0 40 80 120
P – Total Power Dissipation ( mW )
T
amb
– Ambient Temperature ( °C )96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 6. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
F
I – Forward Current ( mA )
Figure 7. Forward Current vs. Forward Voltage
–25 0 25 50
0
0.5
1.0
1.5
2.0
CTR – Relative Current Transfer Ratio
rel
T
amb
– Ambient Temperature ( °C )95 11025
75
V
CE
=5V
I
F
=5mA
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
0255075
1
10
100
1000
10000
I – Collector Dark Current,
CEO
T
amb
– Ambient Temperature ( °C )
100
95 11026
with open Base ( nA )
VCE=20V
I
F
=0
Figure 9. Collector Dark Current vs. Ambient Temperature
0.1 1 10
0.01
0.1
1
100
I – Collector Current ( mA )
C
IF – Forward Current ( mA )
100
95 11027
10
VCE=5V
Figure 10. Collector Current vs. Forward Current
0.1 1 10
0.1
1
10
100
V
CE
– Collector Emitter Voltage ( V )
100
95 10985
I – Collector Current ( mA )
C
IF=50mA
5mA
2mA
1mA
20mA
10mA
Figure 11. Collector Current vs. Collector Emitter Voltage
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Document Number 83503
Rev. A6, 08–Sep–99
110
0
0.2
0.4
0.6
0.8
1.0
V – Collector Emitter Saturation Voltage ( V
)
CEsat
IC – Collector Current ( mA )
100
CTR=50%
20%
10%
95 11028
Figure 12. Collector Emitter Saturation Voltage vs.
Collector Current
0.1 1 10
1
10
100
1000
CTR – Current Transfer Ratio ( % )
IF – Forward Current ( mA )
100
95 11029
VCE=5V
Figure 13. Current Transfer Ratio vs. Forward Current
02 4 6
0
2
4
6
8
10
I
C
– Collector Current ( mA )
10
95 11030
t / t – Turn on / Turn off Time ( s )
off
m
on
Non Saturated
Operation
V
S
=5V
R
L
=100
W
t
off
t
on
Figure 14. Turn on / off Time vs. Collector Current
0 5 10 15
0
10
20
30
40
50
I
F
– Forward Current ( mA )
20
95 11031
t / t – Turn on / Turn off Time ( s )
off
m
on
Saturated Operation
V
S
=5V
R
L
=1k
W
t
off
t
on
Figure 15. Turn on / off Time vs. Forward Current
ET1100
820UTK63
Type
Date
Code
Coupling
System
Indicator
Company
Logo
Production
Location
15081
Pin1 Indication
(YM)
Figure 16. Marking example
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Document Number 83503
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Dimensions of TCET110. in mm
14789
Dimensions of TCET110.G in mm
14792
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Document Number 83503
Rev. A6, 08–Sep–99
Dimensions of TCET2100 in mm
14784
Dimensions of TCET4100 in mm
14783
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Document Number 83503
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11 (11)
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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