Datasheet TCED4100G, TCED4100, TCED2100G, TCED2100, TCED1100G Datasheet (Telefunken)

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99234

Optocoupler with Photodarlington Output

Description

The TCED1 100/ TCED2100/ TCED4100 consists of
a phototransistor optically coupled to a gallium arse­nide infrared-emitting diode in a 4-lead up to 16-lead
plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications

Circuits for safe protective separation against
electrical shock according to safety class II

(reinforced isolation):

D

For appl. class I – IV at mains voltage ≤ 300 V

D

For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor

system interface.

VDE Standards

These couplers perform safety functions according
to the following equipment standards:

D

VDE 0884
Optocoupler for electrical safety requirements

D

IEC 950/EN 60950
Office machines (applied for reinforced
isolation for mains voltage ≤ 400 V

RMS

)

D

VDE 0804
Telecommunication apparatus and data
processing

D

IEC 65
Safety for mains-operated electronic and
related household apparatus

14925

Coll. Emitter

Anode Cath.

4 PIN

8 PIN

16 PIN

14580

C

Order Instruction

Ordering Code CTR Ranking Remarks

TCED1100/ TCED1 100G

1)

600% 4 Pin = Single channel
TCED2100 600% 8 Pin = Dual channel
TCED4100 600% 16 Pin = Quad channel

1)

G = Leadform 10.16 mm; G is not market on the body

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99 235

Features

Approvals:

D

BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402

D

FIMKO (SETI): EN 60950,
Certificate number 11992

D

Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 – Double Protection

D

CSA (C–UL) 1577 recognized,
file number E-76222 – Double Protection

D

VDE 0884, Certificate number 115667

VDE 0884 related features:

D

Rated impulse voltage (transient overvoltage)
V

IOTM

= 8 kV peak

D

Isolation test voltage
(partial discharge test voltage) V

pd

= 1.6 kV

D

Rated isolation voltage (RMS includes DC)
V

IOWM

= 600 V

RMS

(848 V peak)

D

Rated recurring peak voltage (repetitive)
V

IORM

= 600 V

RMS

D

Creepage current resistance according to
VDE 0303/IEC 1 12
Comparative Tracking Index: CTI ≥ 175

D

Thickness through insulation ≥ 0.75 mm

D

Internal creepage distance > 4 mm

General features:

D

Isolation materials according to UL94-VO

D

Pollution degree 2 (DIN/VDE 01 10 / resp. IEC 664)

D

Climatic classification 55/100/21 (IEC 68 part 1)

D

Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection

D

Low temperature coefficient of CTR

D

G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCED2100/ TCED4100 optional;
suffix letter ‘G’ is not marked on the optocoupler

D

Coupling System U

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit

Reverse voltage V

R

6 V

Forward current I

F

60 mA

Forward surge current tp ≤ 10 ms I

FSM

1.5 A

Power dissipation T

amb

≤ 25°C P

V

100 mW

Junction temperature T

j

125

°

C

Output (Detector)

Parameter Test Conditions Symbol Value Unit

Collector emitter voltage V

CEO

35 V

Emitter collector voltage V

ECO

7 V

Collector current I

C

80 mA

Collector peak current tp/T = 0.5, tp ≤ 10 ms I

CM

100 mA

Power dissipation T

amb

≤ 25°C P

V

150 mW

Junction temperature T

j

125

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit

AC isolation test voltage (RMS) t = 1 min V

IO

5 kV

Total power dissipation T

amb

≤ 25°C P

tot

250 mW

Operating ambient temperature range T

amb

–40 to +100

°

C

Storage temperature range T

stg

–55 to +125

°

C

Soldering temperature 2 mm from case t ≤ 10 s T

sd

260

°

C

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99236

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Forward voltage IF = 20 mA V

F

1.15 1.4 V

Junction capacitance VR = 0 V, f = 1 MHz C

j

50 pF

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Collector emitter voltage IC = 1 mA V

CEO

32 V

Emitter collector voltage IE = 100 mA V

ECO

7 V

Collector emitter cut-off
current

VCE = 10 V, If = 0, E = 0 I

CEO

15 100 nA

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Collector emitter
saturation voltage

IF = 20 mA, IC = 5 mA V

CEsat

1 V

Cut-off frequency VCE = 5 V, IF = 10 mA,

R

L

= 100

W

f

c

10 kHz

Coupling capacitance f = 1 MHz C

k

0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/I

F

VCE = 2 V, IF = 1 mA TCED1100(G)/

TCED2100/
TCED4100

CTR 6.0 8.0

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99 237

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters Test Conditions Symbol Value Unit

Forward current I

si

130 mA

Output (Detector)

Parameters Test Conditions Symbol Value Unit

Power dissipation T

amb

≤ 25°C P

si

265 mW

Coupler

Parameters Test Conditions Symbol Value Unit

Rated impulse voltage V

IOTM

8 kV

Safety temperature T

si

150

°

C

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Partial discharge test voltage –
Routine test

100%, t

test

= 1 s V

pd

1.6 kV

Partial discharge test voltage – tTr = 60 s, t

test

= 10 s, V

IOTM

8 kV

gg

Lot test (sample test)

Tr test

(see figure 2)

V

pd

1.3 kV

Insulation resistance VIO = 500 V R

IO

10

12

W

VIO = 500 V,
T

amb

= 100°C

R

IO

10

11

W

VIO = 500 V,
T

amb

= 150°C

(construction test only)

R

IO

10

9

W

0 25 50 75 125

0

50

100

150

200

300

P – Total Power Dissipation ( mW )

tot

T

amb

– Ambient Temperature ( °C )

150

14887

100

250

Photodarlington
Psi ( mW )

IR-Diode
Isi ( mA )

Figure 1. Derating diagram

V

IOTM

V

Pd

V

IOWM

V

IORM

V

t

4

t

3

t

test

t

stres

t

2

t

1

t

0

13930

tTr= 60 s

t1, t2= 1 to 10 s
t3, t4= 1 s

t

test

= 10 s

t

stres

= 12 s

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99238

Switching Characteristics

Parameter Test Conditions Symbol Typ. Unit

Rise time VCC = 2 V, IC = 10 mA, RL = 100 W (see figure 3) t

r

300

m

s

Fall time

CC C L

(g)

t

f

250

m

s

CI

w

Channel I

Channel II

50

W

+ V

CC

Oscilloscope
R

I

w

1 M

W

20 pF

I

C

= 10 mA ;

Adjusted through
input amplitude

I

F

RG = 50

W

t

1

= 1 ms

0

14779

R

L

t

p

T

+

0.01

I

F

Figure 3. Test circuit

t

p

t

t

0

0

10%

90%

100%

t

r

t

d

t

on

t

s

t

f

t

off

I

F

I

C

96 11698

t

p

pulse dura­tion
t

d

delay time
t

r

rise time
t

on

(= td + tr) turn-on time

t

s

storage time

t

f

fall time

t

off

(= ts + tf) turn-off time

Figure 4. Switching times

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99 239

Typical Characteristics (T

amb

= 25_C, unless otherwise specified)

0.8

0.9

1.0

1.1

1.2

1.3

0 20406080100

T

amb

– Ambient Temperature ( °C

14389

V – Forward Voltage ( V )

F

IF=10mA

Figure 5. Forward Voltage vs. Ambient Temperature

0.1

1.0

10.0

100.0

1000.0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )14390

F

I – Forward Current ( mA )

Figure 6. Forward Current vs. Forward Voltage

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

–30–20–10 0 10 20 30 40 50 60 70 80 90 100

T

amb

– Ambient Temperature ( °C

14391

CTR – Relative Current Transfer Ratio

rel

VCE=5V
I

F

=1mA

Figure 7. Relative Current Transfer Ratio vs.

Ambient Temperature

1

10

100

1000

10000

100000

20 30 40 50 60 70 80 90 100

T

amb

– Ambient Temperature ( °C

14392

I – Collector Dark Current,

CEO

with open Base ( nA )

VCE=10V
I

F

=0

Figure 8. Collector Dark Current vs.

Ambient Temperature

0.1

1.0

10.0

100.0

1000.0

0.1 1.0 10.0 100.0

IF – Forward Current ( mA )14393

VCE=2V

I – Collector Current ( mA )

C

Figure 9. Collector Current vs. Forward Current

0.1

1.0

10.0

100.0

0.1 1.0 10.0 100.0

VCE – Collector Emitter Voltage ( V

14394

I – Collector Current ( mA )

C

1mA

0.5m
A

0.2mA

0.1m
A

IF=2mA

Figure 10. Collector Current vs. Collector Emitter Voltage

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99240

0.6

0.7

0.8

0.9

1.0

1.1

1 10 100

IC – Collector Current ( mA )14395

V – Collector Emitter Saturation Voltage ( V )

CEsat

CTR=200
%

25
%

50
%

100
%

Figure 11. Collector Emitter Saturation Voltage vs.

Collector Current

ED1100

820UTK63

Type

Date

Code

Coupling

System

Indicator

Company

Logo

Production

Location

15084

Pin 1 Indication

(YM)

Figure 12. Marking example

10

100

1000

10000

0.1 1.0 10.0 100.0

IF – Forward Current ( mA )14396

VCE=2V

CTR – Current Transfer Ratio ( % )

Figure 13. Current Transfer Ratio vs. Forward Current

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99 241

Dimensions of TCED1100 in mm

96 12231

weight: ca. 0.25 g
creepage distance:

y

6 mm

air path:

y

6 mm

after mounting on PC board

Dimensions of TCED1100G in mm

9612234

weight: ca. 0.25 g

creepage distance:

y

8 mm

air path:

y

8 mm

after mounting on PC board

Leadform 10.16 mm (G_type)

TCED1100(G) up to TCED4100

Vishay Telefunken

Rev. A3, 1 1–Jan–99242

Dimensions of TCED2100 in mm

96 12228

weight: ca. 0.5 g
creepage distance:

y

6 mm

air path:

y

6 mm

after mounting on PC board

Dimensions of TCED4100 in mm

96 12227

weight: ca. 1.1 g
creepage distance:

y

6 mm

air path:

y

6 mm

after mounting on PC board