Datasheet TC7662BCPA, TC7662BCOA, TC7662BEPA, TC7662BEOA Datasheet (Microchip Technology)

EVALUATION
KIT
AVAILABLE
CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
TC7662B
Wide Operating Voltage Range: 1.5V to 15V
Boost Pin (Pin 1) for Higher Switching Frequency
High Power Efficiency is 96%
Easy to Use – Requires Only 2 External Non-Critical
Passive Components
Improved Direct Replacement for Industry Stan-
dard ICL7660 and Other Second Source Devices
APPLICATIONS
Simple Conversion of +5V to ±5V Supplies
Voltage Multiplication V
Negative Supplies for Data Acquisition Systems
and Instrumentation
RS232 Power Supplies
Supply Splitter, V
OUT
PIN CONFIGURATION (DIP AND SOIC)
BOOST
CAP
GND
CAP
1
+
2 3
4
TC7662BCPA TC7662BEPA
+
8
V
7
OSC LOW
6
VOLTAGE (LV) V
5
OUT
OUT
= ±VS/2
BOOST
CAP
GND
CAP
= ±nV
1
+
2
TC7662BCOA
3
TC7662BEOA
4
IN
+
8
V
7
OSC LOW
6
VOLTAGE (LV) V
5
OUT
GENERAL DESCRIPTION
The TC7662B is a pin-compatible upgrade to the Indus­try standard TC7660 charge pump voltage converter. It converts a +1.5V to +15V input to a corresponding – 1.5 to – 15V output using only two low-cost capacitors, eliminating inductors and their associated cost, size and EMI.
The on-board oscillator operates at a nominal fre­quency of 10kHz. Frequency is increased to 35kHz when pin 1 is connected to V+, allowing the use of smaller external capacitors. Operation below 10kHz (for lower supply current applications) is also possible by connecting an external capacitor from OSC to ground (with pin 1 open).
The TC7662B is available in both 8-pin DIP and 8-pin small outline (SO) packages in commercial and extended temperature ranges.
ORDERING INFORMATION
Temperature
Part No. Package Range
TC7662BCOA 8-Pin SOIC 0°C to +70°C TC7662BCPA 8-Pin Plastic DIP 0°C to +70°C TC7662BEOA 8-Pin SOIC – 40°C to +85°C TC7662BEPA 8-Pin Plastic DIP – 40°C to +85°C
TC7660EV Evaluation Kit for
Charge Pump Family
FUNCTIONAL BLOCK DIAGRAM
LV
1
7
OSCILLATOR
6
TC7662B
BOOST
OSC
© 2001 Microchip Technology Inc. DS21469A
RC
÷ 2
INTERNAL
VOLTAGE
REGULATOR
VOLTAGE–
LEVEL
TRANSLATOR
V+CAP
82
3
GND
+
LOGIC
NETWORK
4
5
CAP
V
OUT
TC7662B-8 9/11/96
TC7662B
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature Range
C Suffix ..................................................0°C to +70°C
Supply Voltage ...................................................... +16.5V
LV, Boost and OSC Inputs Voltage (Note 1)
V+<5.5V.....................................– 0.3V to (V+ + 0.3V)
E Suffix .............................................– 40°C to +85°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
>5.5V .................................. (V+ – 5.5V) to (V+ + 0.3V)
Current Into LV (Note 1)
V+ >3.5V ............................................................ 20µA
Output Short Duration
(V
5.5V).......................................Continuous
SUPPLY
Power Dissipation (TA 70°C) (Note 2)
Plastic DIP ......................................................730mW
SO ..................................................................470mW
ELECTRICAL CHARACTERISTICS: V
+
= 5V, TA = +25°C, OSC = Free running, Test Circuit Figure 2, Unless
* Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Otherwise Specified.
Symbol Parameter Test Conditions Min Typ Max Unit
+
I
+
I
+
V
H +
V
L
R
OUT
f
OSC
P
Eff
V
Eff Voltage Conversion Efficiency RL = 99 99.9 %
OUT
Z
OSC
Supply Current (Note 3) RL = ∞, +25°C 80 160 µA (Boost pin OPEN OR GND) 0°C ≤ TA +70°C 180 µA
– 40°C ≤ TA +85°C 180 µA – 55°C TA +125°C 200 µA
Supply Current 0°C ≤ TA +70°C 300 µA (Boost pin = V+) – 40°C ≤ T
+85°C 350
A
– 55°C TA +125°C 400
Supply Voltage Range, High RL = 10 kΩ, LV Open, T
TA T
MIN
MAX
3.0 15 V
(Note 4) Supply Voltage Range, Low RL = 10 kΩ, LV to GND, T Output Source Resistance I
= 20mA, 0°C ≤ TA +70°C 65 100
OUT
I
= 20mA, – 40°C ≤ TA +85°C 120
OUT
I
= 20mA, – 55°C ≤ TA +125°C 150
OUT
I
= 3mA, V+ = 2V, LV to GND , 250
OUT
0°C T I
OUT
– 40°C ≤ T I
OUT
+70°C
A
= 3mA, V+ = 2V, LV to GND , 300
+85°C
A
= 3mA, V+ = 2V, LV to GND , 400
TA T
MIN
MAX
1.5 3.5 V
– 55°C TA +125°C
Oscillator Frequency C
= 0,Pin 1 Open or GND 5 10 kHz
OSC
Pin 1 = V
+
35
Power Efficiency RL = 5k 96 96 %
T
TA T
MIN
MAX
95 97
Oscillator Impedance V+ = 2V 1 M
V+ = 5V 100 k
NOTES:
1. Connecting any terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior to “power up” of the TC7662B.
2. Derate linearly above 50°C by 5.5 mW/°C.
3. In the test circuit, there is no external capacitor applied to pin 7. However, when the device is plugged into a test socket, there is usually a very small but finite stray capacitance present, of the order of 5pF.
4. The TC7662B can operate without an external diode over the full temperature and voltage range. This device will function in existing designs which incorporate an external diode with no degradation in overall circuit performance.
TC7662B-8 9/11/96
2
© 2001 Microchip Technology Inc. DS21469A
CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
TC7662B
DETAILED DESCRIPTION
The TC7662B contains all the necessary circuitry to complete a negative voltage converter, with the exception of two external capacitors which may be inexpensive 1µF polarized electrolytic types. The mode of operation of the device may be best understood by considering Figure 2, which shows an idealized negative voltage converter. Ca­pacitor C1 is charged to a voltage V+ for the half cycle when switches S1 and S3 are closed. (Note: Switches S2 and S are open during this half cycle.) During the second half cycle of operation, switches S2 and S4 are closed, with S1 and S open, thereby shifting capacitor C1 negatively by V+ volts. Charge is then transferred from C1 to C2 such that the voltage on C2 is exactly V+, assuming ideal switches and no load on C2. The TC7662B approaches this ideal situation more closely than existing non-mechanical circuits.
In the TC7662B, the four switches of Figure 2 are MOS power switches; S1 is a P-channel device and S2, S3 and S are N-channel devices. The main difficulty with this ap­proach is that in integrating the switches, the substrates of S3 and S4 must always remain reverse biased with respect to their sources, but not so much as to degrade their “ON” resistances. In addition, at circuit start up, and under output short circuit conditions (V be sensed and the substrate bias adjusted accordingly. Failure to accomplish this would result in high power losses and probable device latchup.
The problem is eliminated in the TC7662B by a logic network which senses the output voltage (V with the level translators, and switches the substrates of S and S4 to the correct level to maintain necessary reverse bias.
The voltage regulator portion of the TC7662B is an integral part of the anti-latchup circuitry; however, its inher­ent voltage drop can degrade operation at low voltages. Therefore, to improve low voltage operation, the “LV” pin should be connected to GND, disabling the regulator. For supply voltages greater than 3.5 volts, the LV terminal must be left open to insure latchup proof operation and prevent device damage.
+
V
1 2
+
C
10 µF
1
TC7662B
3 4
= V+), the output voltage must
OUT
) together
OUT
I
I
R
S
L
L
V
(+5V)
8 7 6 5
+
THEORETICAL POWER EFFICIENCY CONSIDERATIONS
In theory, a voltage converter can approach 100%
efficiency if certain conditions are met: A. The drive circuitry consumes minimal power. B. The output switches have extremely low ON resistance
and virtually no offset.
4
C. The impedances of the pump and reservoir capacitors
are negligible at the pump frequency.
3
The TC7662B approaches these conditions for nega-
tive voltage conversion if large values of C1 and C2 are used.
Energy is lost only in the transfer of charge between capacitors if a change in voltage occurs. The energy lost
is defined by:
2
4
E = 1/2 C1 (V
1
– V
2
)
2
where V1 and V2 are the voltages on C1 during the pump and transfer cycles. If the impedances of C1 and C2 are relatively high at the pump frequency (refer to Figure 2) compared to the value of RL, there will be a substantial difference in voltages V1 and V2. Therefore, it is desirable not only to make C2 as large as possible to eliminate output voltage ripple, but also to employ a correspondingly large value for C1 in order to achieve maximum efficiency of operation.
Dos and Don’ts
3
1. Do not exceed maximum supply voltages.
2. Do not connect the LV terminal to GND for supply voltages greater than 3.5 volts.
3. Do not short circuit the output to V+ supply for voltages above 5.5 volts for extended periods; however, transient conditions including start-up are okay.
S
V
IN
1
S
3
S
2
C
1
C
S
4
2
V
OUT
= – V
IN
NOTE: For large values of C
of C
and C2 should be increased to 100 µF.
1
Figure 1. TC7662B Test Circuit
(>1000 pF), the values
OSC
V
O
C
2
10 µF
+
Figure 2. Idealized Negative Voltage Capacitor
3
TC7662B-8 9/11/96© 2001 Microchip Technology Inc. DS21469A
TC7662B
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
4. When using polarized capacitors in the inverting mode, the + terminal of C1 must be connected to pin 2 of the TC7662B and the – terminal of C2 must be connected to GND.
5. If the voltage supply driving the TC7662B has a large source impedance (25-30 ohms), then a 2.2µF capaci­tor from pin 8 to ground may be required to limit the rate of rise of the input voltage to less than 2V/µsec.
TYPICAL APPLICATIONS Simple Negative Voltage Converter
The majority of applications will undoubtedly utilize the TC7662B for generation of negative supply voltages. Figure 3 shows typical connections to provide a negative supply where a positive supply of +1.5V to +15V is available. Keep in mind that pin 6 (LV) is tied to the supply negative (GND) for supply voltages below 3.5 volts.
V+
1
10 µF
Figure 3. Simple Negative Converter and its Output Equivalent
2
+
TC7662B
3 4
a. b.
The output characteristics of the circuit in Figure 3 can be approximated by an ideal voltage source in series with a resistance as shown in Figure 3b. The voltage source has a value of–(V+). The output impedance (RO) is a function of the ON resistance of the internal MOS switches (shown in Figure 2), the switching frequency, the value of C1 and C2, and the ESR (equivalent series resistance) of C1 and C2. A good first order approximation for RO is:
8 7 6 5
10 µF
R
O
V
V
= –V+
+
OUT
V+
+
OUT
voltage and temperature (See the Output Source Resis­tance graphs), typically 23 at +25°C and 5V. Careful selection of C1 and C2 will reduce the remaining terms, minimizing the output impedance. High value capacitors will reduce the 1/(f
x C1) component, and low ESR capaci-
PUMP
tors will lower the ESR term. Increasing the oscillator fre­quency will reduce the 1/(f
x C1) term, but may have the
PUMP
side effect of a net increase in output impedance when C1 > 10µF and there is not enough time to fully charge the capacitors every cycle. In a typical application when f
OSC
=
10kHz and C = C1 = C2 = 10µF: RO 2 x 23 + + 4 x ESRC1 + ESR
(5 x 103 x 10 x 10-6)
1
C2
RO (46 + 20 + 5 x ESRC) Ω
Since the ESRs of the capacitors are reflected in the output impedance multiplied by a factor of 5, a high value could potentially swamp out a low 1/(f
x C1) term,
PUMP
rendering an increase in switching frequency or filter capaci­tance ineffective. Typical electrolytic capacitors may have ESRs as high as 10Ω.
Output Ripple
ESR also affects the ripple voltage seen at the output. The total ripple is determined by 2 voltages, A and B, as shown in Figure 4. Segment A is the voltage drop across the ESR of C2 at the instant it goes from being charged by C (current flowing into C2) to being discharged through the load (current flowing out of C2). The magnitude of this current change is 2 x I ESRC2 volts. Segment B is the voltage change across C during time t2, the half of the cycle when C2 supplies current to the load. The drop at B is I peak ripple voltage is the sum of these voltage drops:
V
( + ESR
RIPPLE
2 x f
, hence the total drop is 2 x I
OUT
x t2/C2 volts. The peak-to-
OUT
1
x I
PUMP
x C
2
C2
OUT
OUT
)
1
x
2
RO 2(R
(f
= , R
PUMP
Combining the four R
RO 2 x RSW + + 4 x ESRC1 + ESRC2Ω
+ R
SW1
ESRC1) + + ESR
f
OSC
2
+ ESRC1) + 2(R
SW3
SW2
1
f
x C
PUMP
SWX
terms as RSW, we see that:
SWX
1
= MOSFET switch resistance)
1
f
x C
PUMP
1
+ R
C2
RSW, the total switch resistance, is a function of supply
TC7662B-8 9/11/96
SW4
+
t
2
0
V
– (V+)
4
B
A
Figure 4. Output Ripple
t
1
© 2001 Microchip Technology Inc. DS21469A
CHARGE PUMP DC-TO-DC
1 2 3 4
8 7 6 5
TC7662B
+
V
+
+
CMOS GATE
10µF
V
OUT
10µF
1 k
V
+
VOLTAGE CONVERTER
TC7662B
Paralleling Devices
Any number of TC7662B voltage converters may be paralleled to reduce output resistance (Figure 5). The reser­voir capacitor, C2, serves all devices, while each device requires its own pump capacitor, C1. The resultant output resistance would be approximately:
R
(of TC7662B)
R
=
OUT
1 2
C
1
3 4
TC7662B
"1"
Figure 5. Paralleling Devices
OUT
n (number of devices)
+
V
8 7 6 5
C
1
1 2 3 4
TC7662B
"n"
8 7 6 5
R
L
C
2
+
Cascading Devices
The TC7662B may be cascaded as shown to produce larger negative multiplication of the initial supply voltage. However, due to the finite efficiency of each device, the practical limit is 10 devices for light loads. The output voltage is defined by:
V
= – n(VIN)
OUT
Changing the TC7662B Oscillator Frequency
It may be desirable in some applications (due to noise or other considerations) to increase the oscillator frequency. This is achieved by one of several methods described below:
By connecting the BOOSTPin (Pin 1) to V+, the oscillator charge and discharge current is increased and, hence the oscillator frequency is increased by approximately 3-1/2 times. The result is a decrease in the output impedance and ripple. This is of major importance for surface mount appli­cations where capacitor size and cost are critical. Smaller capacitors, e.g., 0.1µF, can be used in conjunction with the Boost Pin in order to achieve similar output currents com­pared to the device free running with C1 = C2 = 1µF or 10µF. (Refer to graph of Output Source Resistance as a Function of Oscillator Frequency).
Increasing the oscillator frequency can also be achieved by overdriving the oscillator from an external clock as shown in Figure 7. In order to prevent device latchup, a 1k resistor must be used in series with the clock output. In a situation where the designer has generated the external clock fre­quency using TTL logic, the addition of a 10k pullup resistor to V+ supply is required. Note that the pump fre­quency with external clocking, as with internal clocking, will be 1/2 of the clock frequency. Output transitions occur on the positive-going edge of the clock.
where n is an integer representing the number of devices cascaded. The resulting output resistance would be ap­proximately the weighted sum of the individual TC7662B R
values.
OUT
+
V
1 2
+
TC7662B
10µF
3 4
*V
= –nV
OUT
Figure 6. Cascading Devices for Increased Output Voltage
8 7 6 5
"1"
+
10µF
+
10µF
1 2 3 4
TC7662B
"n"
8 7 6 5
+
10µF
V
OUT
Figure 7. External Clocking
It is also possible to increase the conversion efficiency of the TC7662B at low load levels by lowering the oscillator frequency. This reduces the switching losses, and is shown in Figure 8. However, lowering the oscillator frequency will cause an undesirable increase in the impedance of the pump (C1) and reservoir (C2) capacitors; this is overcome by increasing the values of C1 and C2 by the same factor that the frequency has been reduced. For example, the addition of a 100pF capacitor between pin 7 (Osc) and V+ will lower the oscillator frequency to 1kHz from its nominal frequency of 10kHz (multiple of 10), and thereby necessitate a corre­sponding increase in the value of C1 and C2 (from 10µF to 100µF).
5
TC7662B-8 9/11/96© 2001 Microchip Technology Inc. DS21469A
TC7662B
+
V
1 2
+
C
1
TC7662B
3 4
Figure 8. Lowering Oscillator Frequency
Positive Voltage Doubling
The TC7662B may be employed to achieve positive voltage doubling using the circuit shown in Figure 9. In this application, the pump inverter switches of the TC7662B are used to charge C1 to a voltage level of V+ – VF (where V+ is the supply voltage and VF is the forward voltage on C1 plus the supply voltage (V+) applied through diode D2 to capacitor C2). The voltage thus created on C2 becomes (2 V+) – (2 VF), or twice the supply voltage minus the combined forward voltage drops of diodes D1 and D2.
The source impedance of the output (V on the output current, but for V+ = 5V and an output current of 10 mA, it will be approximately 60Ω.
8 7 6 5
C
2
+
) will depend
OUT
C
V
OSC
OUT
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
+
V
1 2
TC7662B
3 4
+
C
1
Figure 10. Combined Negative Converter and Positive Doubler
8 7 6 5
+
C
2
D
D
Voltage Splitting
The bidirectional characteristics can also be used to split a higher supply in half, as shown in Figure 11. The combined load will be evenly shared between the two sides and a high value resistor to the LV pin ensures start-up. Because the switches share the load in parallel, the output impedance is much lower than in the standard circuits, and higher currents can be drawn from the device. By using this circuit, and then the circuit of Figure 6, +15V can be converted (via +7.5V and –7.5V) to a nominal –15V, though with rather high series resistance (~250).
V –(V+–VF)
+
1
V
OUT
(2 V+) – (2 VF)
2
+
OUT
C
3
=
C
4
=
+
V
1 2
TC7662B
3 4
Figure 9. Positive Voltage Multiplier
8
D
7 6 5
1
+
C
1
D
2
V
OUT
(2 V+) – (2 VF)
+
C
2
=
Combined Negative Voltage Conversion and Positive Supply Multiplication
Figure 10 combines the functions shown in Figures 3 and 9 to provide negative voltage conversion and positive voltage doubling simultaneously. This approach would be, for example, suitable for generating +9V and –5V from an existing +5V supply. In this instance, capacitors C1 and C perform the pump and reservoir functions, respectively, for the generation of the negative voltage, while capacitors C and C4 are pump and reservoir, respectively, for the doubled positive voltage. There is a penalty in this configuration which combines both functions, however, in that the source impedances of the generated supplies will be somewhat higher due to the finite impedance of the common charge pump driver at pin 2 of the device.
TC7662B-8 9/11/96
+
V
50 µF
+
-
+
-
1 2
TC7662B
3 4
© 2001 Microchip Technology Inc. DS21469A
8 7 6 5
V
R
L1
V
=
OUT
V+–V
2
R
L2
3
2
6
50 µF
+
50
-
µF
Figure 11. Splitting a Supply in Half
CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
TC7662B
Regulated Negative Voltage Supply
In some cases, the output impedance of the TC7662B can be a problem, particularly if the load current varies substantially. The circuit of Figure 12 can be used to over­come this by controlling the input voltage, via an ICL7611 low-power CMOS op amp, in such a way as to maintain a nearly constant output voltage. Direct feedback is advisable, since the TC7662Bs output does not respond instanta­neously to change in input, but only after the switching delay. The circuit shown supplies enough delay to accommodate the TC7662B, while maintaining adequate feedback. An increase in pump and storage capacitors is desirable, and the values shown provide an output impedance of less than 5 to a load of 10mA.
+
100µF
50k
+8V
+
10µF
+
V+
1 2
TC7662B
3
­4
8 7 6 5
V
OUT
56k
+8V
50k
100k
TTL DATA
INPUT
1µF
+5 LOGIC SUPPLY
11
12
16
4
1 2
+
3 4
TC7662B
15
8 7 6 5
1µF
+
IH5142
13 14
+5V
1
3
-5V
Figure 13. RS232 Levels from a Single 5V Supply
RS232 DATA OUTPUT
800k
250K
VOLTAGE
ADJUST
Figure 12. Regulating the Output Voltage
100µF
7
TC7662B-8 9/11/96© 2001 Microchip Technology Inc. DS21469A
TC7662B
TYPICAL CHARACTERISTICS
Supply Current vs. Temperature
(with Boost Pin = V
1000
IN
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
)
101.0
Voltage Conversion
800
600
(µA)
DD
400
I
200
0
-40 -20 0 20 40 10060 80
TEMPERATURE (°C)
VIN = 12V
VIN = 5V
Output Source Resistance vs. Supply Voltage
100
70 50
30
100.5 Without Load
100.0
99.5
99.0
10K Load
98.5
VOLTAGE CONVERSION EFFICIENCY (%)
98.0 112111098756423
INPUT VOLTAGE VIN (V)
TA = 25°C
Output Source Resistance vs. Temperature
100
80
60
40
VIN = 2.5V
VIN = 5.5V
OUTPUT SOURCE RESISTANCE ()
10
1.5 1211.510.59.58.57.55.5 6.54.52.5 3.5
Output Voltage vs. Output Current
0
-2
(V)
-4
OUT
-6
-8
-10
OUTPUT VOLTAGE V
-12 0 1009080706040 503010 20
TC7662B-8 9/11/96
SUPPLY VOLTAGE (V)
OUTPUT CURRENT (mA)
I
OUT
= 20mA
T
= 25°C
A
20
OUTPUT SOURCE RESISTANCE ()
200 175 150
(µA)
DD
125 100
75 50
SUPPLY CURRENT I
25
0
8
0
-40 -20 0 20 40 10060 80
TEMPERATURE (°C)
Supply Current vs. Temperature
VIN = 12.5V
VIN = 5.5V
-40 -20 0 20 40 10060 80
TEMPERATURE (°C)
© 2001 Microchip Technology Inc. DS21469A
CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
TC7662B
TYPICAL CHARACTERISTICS
Unloaded Osc Freq vs. Temperature
12
10
8
6
4
2
OSCILLATOR FREQUENCY (kHz)
0
-40 -20 0 20 40 10060 80
TEMPERATURE (°C)
PACKAGE DIMENSIONS
(cont.)
VIN = 5V
VIN = 12V
60
50
40
30
20
10
OSCILLATOR FREQUENCY (kHz)
0
8-Pin Plastic DIP
Unloaded Osc Freq vs. Temperature
with Boost Pin = V
-40 -20 0 20 40 10060 80
TEMPERATURE (°C)
IN
VIN = 5V
VIN = 12V
.045 (1.14) .030 (0.76)
.200 (5.08) .140 (3.56)
.150 (3.81) .115 (2.92)
.400 (10.16)
.348 (8.84)
.110 (2.79) .090 (2.29)
.070 (1.78) .040 (1.02)
.022 (0.56) .015 (0.38)
PIN 1
.260 (6.60) .240 (6.10)
.040 (1.02) .020 (0.51)
.015 (0.38) .008 (0.20)
.310 (7.87) .290 (7.37)
3° MIN.
.400 (10.16)
.310 (7.87)
Dimensions: inches (mm)
9
TC7662B-8 9/11/96© 2001 Microchip Technology Inc. DS21469A
TC7662B
PACKAGE DIMENSIONS (Cont.)
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
8-Pin SOIC
.050 (1.27) TYP.
.197 (5.00) .189 (4.80)
.020 (0.51) .013 (0.33)
.157 (3.99) .150 (3.81)
.010 (0.25) .004 (0.10)
.244 (6.20) .228 (5.79)
.069 (1.75) .053 (1.35)
8° MAX.
.010 (0.25) .007 (0.18)
.050 (1.27) .016 (0.40)
Dimensions: inches (mm)
TC7662B-8 9/11/96
10
© 2001 Microchip Technology Inc. DS21469A
CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
WORLDWIDE SALES AND SERVICE
TC7662B
AMERICAS
Corporate Office
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com
Rocky Mountain
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456
Atlanta
500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640 -03 07
Austin
Analog Product Sales 8303 MoPac Expressway North Suite A-201 Austin, TX 78759 Tel: 512-345-2030 Fax: 512-345 -60 85
Boston
2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692 -38 21
Boston
Analog Product Sales Unit A-8-1 Millbrook Tarry Condominium 97 Lowell Road Concord, MA 01742 Tel: 978-371-6400 Fax: 978-371 -00 50
Chicago
333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-2 85 -00 75
Dallas
4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818 -29 24
Dayton
Two Prestige Place, Suite 130 Miamisburg, OH 45342 Tel: 937-291-1654 Fax: 937-291 -91 75
Detroit
Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-5 38 -22 60
Los Angeles
18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263 -13 38
Mountain View
Analog Product Sales 1300 Terra Bella Avenue Mountain View, CA 94043-1836 Tel: 650-968-9241 Fax: 650-967 -15 90
All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 1/01 Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your re sponsib ility to en sure that your applicatio n mee ts with your specifica tions. No repr esentation or warra nty is given and no liability is assumed by Microc hip Technology Incorporated with re spec t to the accur acy or use of such infor mation, or infrin gemen t of patents or other intel lectual property rights arising from such use or otherwise. Use of Microchipís products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellec­tual property rights. The Micro chip logo and name are registered trad emarks of Microchip Technology Inc. in the U.S.A. and oth er countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
New York
150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Cana da Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
China - Beijing
Microchip Technology Beijing Office Unit 915 New China Hong Kong Manhattan Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104
China - Shanghai
Microchip Technology Shanghai Office Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Hong Kong
Microchip Asia Pacific RM 2101, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, OíShaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Intl. Inc. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea Tel: 82-2-554-7200 Fax: 82-2-558-5934
ASIA/PACIFIC
(continued)
Singapore
Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-334- 8870 Fax: 65-334-8850
Taiwan
Microchip Technology Taiwan 11F-3, No. 2 07 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Australia
Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Denmark
Microchip Technology Denmark ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910
France
Arizona Microchip Technology SARL Parc díActivite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Arizona Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Germany
Analog Product Sales Lochhamer Strasse 13 D-82152 Martinsried, Germany Tel: 49-89-895650-0 Fax: 49-89-895650-22
Italy
Arizona Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820
01/09/01
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TC7662B-8 9/11/96© 2001 Microchip Technology Inc. DS21469A
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