Datasheet TC4425MJA, TC4425EPA, TC4425EOE, TC4425CPA, TC4425COE Datasheet (Microchip Technology)

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4423
TC4424
TC4425

FEATURES

■ High Peak Output Current .................................. 3A

■ Wide Operating Range ..........................4.5V to 18V

■ High Capacitive Load

Drive Capability .......................... 1800pF in 25nsec

■ Short Delay Times ............................. <40nsec Typ.

■ Matched Rise/Fall Times

■ Low Supply Current

— With Logic "1" Input ................................. 3.5mA

— With Logic "0" Input ................................. 350µA

■ Low Output Impedance ............................ 3.5Ω Typ.

■ Latch-Up Protected ..Will Withstand 1.5A Reverse

Current

■ Logic Input Will Withstand Negative Swing Up

to 5V

■ ESD Protected.....................................................4kV

■ Pinouts Same as TC1426/27/28; TC4426/27/28

ORDERING INFORMATION

Temperature

Part No. Package Range

TC4423COE 16-Pin SOIC (Wide) 0°C to +70°C
TC4423CPA 8-Pin Plastic DIP 0°C to +70°C
TC4423EOE 16-Pin SOIC (Wide) – 40°C to +85°C
TC4423EPA 8-Pin Plastic DIP – 40°C to +85°C
TC4423MJA 8-Pin CerDIP – 55°C to +125°C

TC4424COE 16-Pin SOIC (Wide) 0°C to +70°C
TC4424CPA 8-Pin Plastic DIP 0°C to +70°C
TC4424MJA 8-Pin CerDIP – 55°C to +125°C

GENERAL DESCRIPTION

The TC4423/4424/4425 are higher output current ver­sions of the new TC4426/4427/4428 buffer/drivers, which, in
turn, are improved versions of the earlier TC426/427/428
series. All three families are pin-compatible. The TC4423/
4424/4425 drivers are capable of giving reliable service in
far more demanding electrical environments than their ante­cedents.

Although primarily intended for driving power MOSFETs,
the TC4423/4424/4425 drivers are equally well-suited to
driving any other load (capacitive, resistive, or inductive)
which requires a low impedance driver capable of high peak
currents and fast switching times. For example, heavily
loaded clock lines, coaxial cables, or piezoelectric transduc­ers can all be driven from the TC4423/4424/4425. The only
known limitation on loading is the total power dissipated in
the driver must be kept within the maximum power dissipa­tion limits of the package.

Temperature

Part No Package Range

TC4424EOE 16-Pin SO Wide – 40°C to +85°C
TC4424EPA 8-Pin Plastic DIP – 40°C to +85°C

TC4425MJA 8-Pin CerDIP – 55°C to +125°C
TC4425COE 16-Pin SO Wide 0°C to +70°C
TC4425CPA 8-Pin Plastic DIP 0°C to +70°C
TC4425EOE 16-Pin SO Wide – 40°C to +85°C
TC4425EPA 8-Pin Plastic DIP – 40°C to +85°C

FUNCTIONAL BLOCK DIAGRAM

INPUT

GND

EFFECTIVE

INPUT C = 20 pF

(EACH INPUT)

© 2001 Microchip Technology Inc. DS21421A

4.7V

V

INVERTING

300 mV

NONINVERTING

TC4423
TC4424
TC4425

NOTES:

1. TC4425 has one inverting and one noninverting driver.

2. Ground any unused driver input.

DUAL INVERTING
DUAL NONINVERTING
ONE INV., ONE NONINV.

DD

OUTPUT

TC4423/4/5-6 10/21/96

TC4423
TC4424
TC4425

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS

Supply Voltage ......................................................... +22V

Input Voltage, IN A or IN B......VDD + 0.3V to GND – 5.0V

Maximum Chip Temperature.................................+150°C

Storage Temperature Range ................– 65°C to +150°C

Lead Temperature (Soldering, 10 sec) .................+300°C

Package Thermal Resistance

CerDIP R
CerDIP R
PDIP R
PDIP R

PIN CONFIGURATIONS

................................................ 150°C/W

θJ-A

.................................................. 55°C/W

θJ-C

................................................... 125°C/W

θJ-A

..................................................... 45°C/W

θJ-C

4423 4424 4425

16
15
14
13
12
11
10
9

NC

IN A

NC
GND
GND

NC

IN B

NC

16-Pin SO Wide
1
2

3
4

TC4423

5

TC4424
TC4425

6
7
8

NC
OUT A

OUT A
V

DD

V

DD
OUT B
OUT B
NC

NC
OUT A
OUT A

V

DD

V

DD
OUT B
OUT B
NC

SOIC R
SOIC R

................................................... 155°C/W

θJ-A

..................................................... 75°C/W

θJ-C

Operating Temperature Range

C Version...............................................0°C to +70°C

I Version ............................................- 25°C to +85°C

E Version ...........................................- 40°C to +85°C

M Version ........................................- 55°C to +125°C

Package Power Dissipation (TA ≤ 70°C)

Plastic DIP ......................................................730mW

CerDIP............................................................800mW

SOIC...............................................................470mW

NC
OUT A
OUT A

V

DD

V

DD
OUT B
OUT B
NC

NC

IN A

GND

IN B

1
2
3
4

8-Pin DIP

TC4423
TC4424
TC4425

4423 4424 4425

8

NC

NC

OUT A
V

DD

OUT B

OUT A
V

DD

OUT B

7
6
5

NC
OUT A

V

DD

OUT B

NC = NO CONNECTION

NOTE: Duplicate pins must both be connected for proper operation.

ELECTRICAL CHARACTERISTICS: T

= +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.

A

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

OH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 — — V
Logic 0 Low Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 1 — 1 µA

Output

V
V
R
R
I

PK

I

REV

OH
OL
O
O

High Output Voltage V

– 0.025 — — V

DD

Low Output Voltage — — 0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10 mA, VDD = 18V — 2.8 5 Ω

OUT

= 10 mA, VDD = 18V — 3.5 5 Ω

OUT

Peak Output Current — 3 — A
Latch-Up Protection Duty Cycle ≤ 2% 1.5 — — A

Withstand Reverse Current t ≤ 300 µsec

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 1800pF — 23 35 nsec
Fall Time Figure 1, CL = 1800pF — 25 35 nsec
Delay Time Figure 1, CL = 1800pF — 33 75 nsec
Delay Time Figure 1, CL = 1800pF — 38 75 nsec

Power Supply

I

S

TC4423/4/5-6 10/21/96

Power Supply Current VIN = 3V (Both Inputs) — 1.5 2.5 mA

VIN = 0V (Both Inputs) — 0.15 0.25 mA

2

© 2001 Microchip Technology Inc. DS21421A

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

90%

10%

10%

10%

t

D1

+5V

INPUT

16V

OUTPUT

0V

0V

90%

90%

OUTPUT

INPUT

0.1 µ

F CERAMIC

C = 1800pF

L

1 µF
WIMA
MKS-2

V

DD

= 16V

TC4424

(1/2 TC4425)

Test Circuit

1

2

t

D2

t

R

t

F

INPUT: 100 kHz,

square wave,

t

RISE

= t

FALL

≤ 10 nsec

TC4423
TC4424
TC4425

ELECTRICAL CHARACTERISTICS (Cont.) Over operating temperature range with 4.5V ≤ V

≤ 18V, unless

DD

otherwise specified.

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 High Input Voltage 2.4 ——V
Logic 0 Low Input Voltage ——0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 10 — 10 µA

Output

V
V
R
R
I

PK

I

REV

OH
OL
O
O

High Output Voltage V

– 0.025 ——V

DD

Low Output Voltage ——0.025 V
Output Resistance, High I
Output Resistance, Low I

= 10 mA, VDD = 18V — 3.7 8 Ω

OUT

= 10 mA, VDD = 18V — 4.3 8 Ω

OUT

Peak Output Current — 3 — A
Latch-Up Protection Duty Cycle ≤ 2% 1.5 —— A

Withstand Reverse Current t ≤ 300 µsec

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 1800pF — 28 60 nsec
Fall Time Figure 1, CL = 1800pF — 32 60 nsec
Delay Time Figure 1, CL = 1800pF — 32 100 nsec
Delay Time Figure 1, CL = 1800pF — 38 100 nsec

Power Supply

I

S

NOTE: 1. Switching times guaranteed by design.

Power Supply Current VIN = 3V (Both Inputs) — 2 3.5 mA

VIN = 0V (Both Inputs) — 0.2 0.3 mA

Test Circuit

INPUT

INPUT: 100 kHz,

square wave,

t

= t

RISE

FALL

≤ 10 nsec

+5V

INPUT

0V

16V

OUTPUT

0V

© 2001 Microchip Technology Inc. DS21421A

(1/2 TC4425)

10%

t

D1

90%

10%

Figure 1. Inverting Driver Switching Time Figure 2. Noninverting Driver Switching Time

V

1

2

TC4423

t

F

= 16V

DD

1 µF
WIMA
MKS-2

0.1

C = 1800pF

L

90%

t

D2

µF CERAMIC

OUTPUT

t

R

10%

90%

3

TC4423/4/5-6 10/21/96

TC4423
TC4424
TC4425

TYPICAL CHARACTERISTICS

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

Rise Time vs. Supply Voltage

100

4700 pF

80

3300 pF

60

(nsec)

2200 pF

RISE

40

t

20

470 pF

0

4681012

V

Rise TIme vs. Capacitive Load

100

80

60

(nsec)

RISE

40

t

DD

14 16 18

5V

10V
15V

1500 pF
1000 pF

Fall Time vs. Supply Voltage

100

4700 pF

80

3300 pF

60

(nsec)

2200 pF

FALL

t

40

20

470 pF

0

4681012

V

DD

Fall TIme vs. Capacitive Load

100

80

60

(nsec)

FALL

40

t

1500 pF
1000 pF

14 16 18

5V

10V

15V

20

0

100 1000 10,000

Rise and Fall Times vs. Temperature

32

30

28

26

24

TIME (nsec)

22

20

18

–55 –35 5 25 45 65 85 105 125–15

TC4423/4/5-6 10/21/96

C (pF)

C = 2200 pF

LOAD

t

RISE

t

FALL

LOAD

TA (°C)

t

FALL

t

RISE

20

0

100 1000 10,000

Propagation Delay vs. Input Amplitude

100

80

60

40

DELAY TIME (nsec)

20

0123456789101112

4

C

LOAD (pF)

t

D1

INPUT (V)

C = 2200 pF

LOAD

V = 10V

DD

t

D2

© 2001 Microchip Technology Inc. DS21421A

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TYPICAL CHARACTERISTICS (Cont.)

TC4423
TC4424
TC4425

Propagation Delay Time vs. Supply Voltage

50

C = 2200 pF

LOAD

45

40

t

35

30

DELAY TIME (nsec)

25

20

4 6 81012141618

D2

t

D2

V

DD

Quiescent Current vs. Supply Voltage

TA = +25°C

1

(mA)

0.1

QUIESCENT

I

BOTH INPUTS = 1

BOTH INPUTS = 0

Delay Time vs. Temperature

50

C = 2200 pF

45

40

35

30

DELAY TIME (nsec)

25

20

LOAD

t

D2

t

D2

–55 –35 –15 5 25 45 65 85 105 125

TA (°C)

Quiescent Current vs. Temperature

1.4

1.2

1.0

(mA)

0.8

0.6

QUIESCENT

I

0.4

INPUTS = 1

0.01
4 6 8 10 12 14 16 18

Output Resistance (Output High)

vs. Supply Voltage

14

12

WORST CASE @ TJ = +150°C

10

(Ω)

8

DS(ON)

R

6

4

2

4 6 8 10 12 14 16 18

© 2001 Microchip Technology Inc. DS21421A

TYP @ TA = +25°C

0.2

0.0

V

DD

–55 –35 –15 5 25 45 65 85 105 125

INPUTS = 0

TA (°C)

Output Resistance (Output Low)

vs. Supply Voltage

14

12

WORST CASE @ TJ = +150°C

10

(Ω)

8

DS(ON)

R

6

4

2

4 6 8 10 12 14 16 18

V

DD

5

TYP @ TA = +25°C

V

DD

TC4423/4/5-6 10/21/96

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

TC4423
TC4424
TC4425

SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)

Supply Current vs. Capacitive Load

60

V = 18V

DD

50

634 kHz

40

(mA)

30

355 kHz

SUPPLY

I

20

200 kHz

112.5 kHz

10

0

100 1000 10,000

C

LOAD

(pF)

Supply Current vs. Capacitive Load

90

V = 12V

80
70
60

(mA)

50
40

SUPPLY

I

30
20
10

DD

2 MHz

1.125 MHz

634 kHz
355 kHz

0

100 1000 10,000

C

LOAD

(pF)

63.4 kHz

35.5 kHz
20 kHz

200 kHz

112.5 kHz

63.4 kHz
20 kHz

Supply Current vs. Frequency

60

V = 18V

DD

50

40

(mA)

30

SUPPLY

I

20

10

0

10 100 1000

3300 pF

1000 pF

10,000 pF

100 pF

FREQUENCY (kHz)

Supply Current vs. Frequency

90

V = 12V

80
70
60

(mA)I

50
40

SUPPLY

I

30
20
10

DD

0

10 100 1000

3300 pF

1000 pF

10,000 pF

FREQUENCY (kHz)

100 pF

120

100

80

(mA)

60

3.55 MHz

SUPPLY

40

I

2 MHz

20

0

100 1000 10,000

TC4423/4/5-6 10/21/96

Supply Current vs. Capacitive Load

V = 6V

DD

C

(pF)

LOAD

1.125 MHz

634 kHz

355 kHz

112.5 kHz
20 kHz

6

Supply Current vs. Frequency

120

V = 6V

100

80

(mA)

60

SUPPLY

40

20

DD

0

10 100 1000

FREQUENCY (kHz)

© 2001 Microchip Technology Inc. DS21421A

4700 pF

10,000 pF

2200 pF

1000 pF

100 pF

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

200

0

400

600

800

1000

1200

1400

020406080

100

120 140

AMBIENT TEMPERATURE (°C)

8 Pin DIP

16 Pin SOIC

8 Pin CerDIP

Thermal Derating Curves

TC4423
TC4424
TC4425

–8

TC4423 Crossover Energy

10

8
6

4

2

–9

10

8

A • sec

6
4

2

–10

10

024681012141618

V

IN

NOTE: The values on this graph represent the loss

seen by both drivers in a package during one
complete cycle. For a single driver, divide the stated
values by 2. For a single transition of a single driver,
divide the stated value by 4.

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings (See page 2) may
cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to Absolute Maximum Rating Conditions for extended
periods may affect device reliability.

PACKAGE DIMENSIONS

8-Pin Plastic DIP

© 2001 Microchip Technology Inc. DS21421A

.045 (1.14)
.030 (0.76)

.200 (5.08)
.140 (3.56)

.150 (3.81)
.115 (2.92)

.400 (10.16)

.348 (8.84)

.110 (2.79)
.090 (2.29)

.070 (1.78)
.040 (1.02)

.022 (0.56)
.015 (0.38)

PIN 1

.260 (6.60)
.240 (6.10)

.040 (1.02)
.020 (0.51)

7

.015 (0.38)
.008 (0.20)

.310 (7.87)
.290 (7.37)

3° MIN.

.400 (10.16)

.310 (7.87)

Dimensions: inches (mm)

TC4423/4/5-6 10/21/96

TC4423
TC4424
TC4425

PACKAGE DIMENSIONS (Cont.)

.110 (2.79)
.090 (2.29)

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

8-Pin CerDIP

PIN 1

.300 (7.62)
.230 (5.84)

.055 (1.40) MAX.

.200 (5.08)
.160 (4.06)

.200 (5.08)
.125 (3.18)

.400 (10.16)

.370 (9.40)

.065 (1.65)
.045 (1.14)

.020 (0.51) MIN.

.040 (1.02)
.020 (0.51)

.150 (3.81)

MIN.

.020 (0.51)
.016 (0.41)

16-Pin Plastic SOIC (Wide)

PIN 1

.299 (7.59)
.291 (7.40)

.419 (10.65)
.398 (10.10)

.015 (0.38)
.008 (0.20)

.320 (8.13)
.290 (7.37)

.400 (10.16)

.320 (8.13)

3° MIN.

TC4423/4/5-6 10/21/96

.413 (10.49)
.398 (10.10)

.050 (1.27) TYP.

.019 (0.48)
.014 (0.36)

.104 (2.64)
.097 (2.46)

.012 (0.30)
.004 (0.10)

MAX.

8

8°

.013 (0.33)
.009 (0.23)

.050 (1.27)
.016 (0.40)

Dimensions: inches (mm)

© 2001 Microchip Technology Inc. DS21421A

3A DUAL HIGH-SPEED POWER MOSFET DRIVERS

WORLDWIDE SALES AND SERVICE

TC4423
TC4424
TC4425

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All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 1/01 Printed on recycled paper.

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(continued)

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© 2001 Microchip Technology Inc. DS21421A

9

TC4423/4/5-6 10/21/96