Datasheet TC4422MJA, TC4422EPA, TC4421CAT, TC4422CPA, TC4422CAT Datasheet (TelCom Semiconductor)

9A HIGH-SPEED MOSFET DRIVERS

FEATURES

■ Tough CMOS™ Construction

■ High Peak Output Current .................................. 9A

■ High Continuous Output Current ............... 2A Max

■ Fast Rise and Fall Times:

— 30 nsec with 4,700 pF Load
— 180 nsec with 47,000 pF Load

■ Short Internal Delays............................ 30nsec Typ

■ Low Output Impedance ............................ 1.4W Typ

APPLICATIONS

■ Line Drivers for Extra-Heavily-Loaded Lines

■ Pulse Generators

■ Driving the Largest MOSFETs and IGBTs

■ Local Power ON/OFF Switch

■ Motor and Solenoid Driver

PIN CONFIGURATIONS

TC4421
TC4422

GENERAL DESCRIPTION

The TC4421/4422 are high current buffer/drivers

capable of driving large MOSFETs and IGBTs.

They are essentially immune to any form of upset
except direct overvoltage or over-dissipation — they can­not be latched under any conditions within their power and
voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on
their ground terminals; they can accept, without either
damage or logic upset, more than 1A inductive current of
either polarity being forced back into their outputs. In addi­tion, all terminals are fully protected against up to 4 kV of
electrostatic discharge.

The TC4421/4422 inputs may be driven directly from
either TTL or CMOS (3V to 18V). In addition, 300 mV of
hysteresis is built into the input, providing noise immunity
and allowing the device to be driven from slowly rising or
falling waveforms.

1

2

3

4

5-Pin TO-220 8-Pin Plastic DIP/CerDIP

V

1

DD

2

INPUT

TC4421

3

TC4421
TC4422

Tab is
Common
to V

DD

DD

V

GND

GND

INPUT

FUNCTIONAL BLOCK DIAGRAM

TELCOM SEMICONDUCTOR, INC.

NOTE:

OUTPUT

NC

GND

Duplicate pins must both be connected
for proper operation.
NC = No connection

INPUT

GND

TC4422

4

both

4.7V

EFFECTIVE

INPUT C

25 pF

8
7
6
5

V

DD

OUTPUT
OUTPUT
GND

INVERTING

300 mV

NONINVERTING

TC4421/TC4422

Inverting/Noninverting

ORDERING INFORMATION

Part No. Package Temperature Range

TC4421CAT 5-Pin TO-220 0°C to +70°C
TC4421CPA 8-Pin PDIP 0°C to +70°C
TC4421EPA 8-Pin PDIP – 40°C to +85°C
TC4421MJA 8-Pin CerDIP – 55°C to+125°C

TC4422CAT 5-Pin TO-220 0°C to +70°C
TC4422CPA 8-Pin PDIP 0°C to +70°C
TC4422EPA 8-Pin PDIP – 40°C to +85°C
TC4422MJA 8-Pin CerDIP – 55°C to+125°C

V

DD

OUTPUT

TC4421/2-7 -1018/96

4-231

5

6

7

8

TC4421
TC4422

9A HIGH-SPEED MOSFET DRIVERS

ABSOLUTE MAXIMUM RATINGS*

Power Dissipation, TA ≤ 70°C

PDIP ..................................................................730W

CerDIP............................................................800mW

5-Pin TO-220 ......................................................1.6W

Power Dissipation, TA ≤ 70°C

5-Pin TO-220 (With Heat Sink).........................1.60W

Derating Factors (To Ambient)

PDIP ............................................................. 8mW/°C

CerDIP....................................................... 6.4mW/°C

5-Pin TO-220 .............................................. 12mW/°C

Thermal Impedance (To Case)

5-Pin TO-220 R

Storage Temperature ............................– 65°C to +150°C

Operating Temperature (Chip) ................................ 150°C

ELECTRICAL CHARACTERISTICS: T

.....................................................10°C/W

QJ-C

= 25°C with 4.5V ≤ V

A

Operating Temperature (Ambient)

C Version...............................................0°C to +70°C

E Version ..........................................– 40°C to +85°C

M Version .......................................– 55°C to +125°C

Lead Temperature (10 sec).....................................300°C

Supply Voltage ............................................................20V

Input Voltage .......................... (V

+ 0.3V) to (GND - 5V)

DD

Input Current (VIN > VDD) ........................................50 mA

*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma­nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.

≤ 18V unless otherwise specified.

DD

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Logic 1 Input Voltage 2.4 1.8 — V
Logic 0 Input Voltage — 1.3 0.8 V
Input Current 0V ≤ VIN ≤ V

DD

– 10 — 10 µA

Output

V
V
R
R
I

PK

I

DC

I

REV

OH
OL
O
O

High Output Voltage See Figure 1 V
Low Output Voltage See Figure 1 — — 0.025 V
Output Resistance, High VDD = 18V, IO = 10 mA — 1.4 — Ω
Output Resistance, Low VDD = 18V, IO = 10 mA — 0.9 1.7 Ω
Peak Output Current VDD = 18V — 9 — A
Continuous Output Current 10V ≤ V

Latch-Up Protection Duty Cycle ≤ 2% >1500 — — mA

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Rise Time Figure 1, CL = 10,000 pF — 60 75 nsec
Fall Time Figure 1, CL = 10,000 pF — 60 75 nsec
Delay Time Figure 1 — 30 60 nsec
Delay Time Figure 1 — 33 60 nsec

Power Supply

I

S

V

DD

Power Supply Current VIN = 3V — 0.2 1.5 mA

Operating Input Voltage 4.5 — 18 V

Input

V

IH

V

IL

I

IN

Logic 1 Input Voltage 2.4 — — V
Logic 0 Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

– 0.025 — — V

DD

≤ 18V, TC = 25° 2A

DD

(TC4421/22 CAT only)

Withstand Reverse Current t ≤ 300 µsec

VIN = 0V — 55 150 µA

DD

– 10 — 10 µA

4-232

TELCOM SEMICONDUCTOR, INC.

9A HIGH-SPEED MOSFET DRIVERS

1

TC4421
TC4422

ELECTRICAL CHARACTERISTICS (cont.):

Measured over operating temperature range with 4.5V ≤ V

Symbol Parameter Test Conditions Min Typ Max Unit
Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

R

O

Switching Time (Note 1)

t

R

t

F

t

D1

t

D2

Power Supply

I

S

V

DD

NOTE: 1. Switching times guaranteed by design.

Logic 1 Input Voltage 2.4 — — V
Logic 0 Input Voltage — — 0.8 V
Input Current 0V ≤ VIN ≤ V

High Output Voltage See Figure 1 V
Low Output Voltage See Figure 1 — — 0.025 V
Output Resistance, High VDD = 18V, IO = 10 mA — 2.4 3.6 W
Output Resistance, Low VDD = 18V, IO = 10 mA — 1.8 2.7 W

Rise Time Figure 1, CL = 10,000 pF — 60 120 nsec
Fall Time Figure 1, CL = 10,000 pF — 60 120 nsec
Delay Time Figure 1 — 50 80 nsec
Delay Time Figure 1 — 65 80 nsec

Power Supply Current VIN = 3V — 0.45 3 mA

VIN = 0V — 0.06 0.2

Operating Input Voltage 4.5 — 18 V

≤ 18V unless otherwise specified.

S

DD

– 10 — 10 µA

– 0.025 — — V

DD

2

3

4

5

V = 18V

DD

18

0.1 µF 0.1 µF

INPUT

TELCOM SEMICONDUCTOR, INC.

26

7

TC4421

54

0.1 µF

+5V

INPUT

0V

OUTPUT

C = 10,000 pF

L

Figure 1. Switching Time Test Circuit

+18V

OUTPUT

0V

10%

t

t

D1

F

90%

10%

INPUT: 100 kHz, square wave,
t

RISE = tFALL

≤ 10nsec

t

90%

D2

10%

t

6

R

90%

7

8

4-233

TC4421
TC4422

TYPICAL CHARACTERISTICS

Rise Time vs. Supply Voltage

220
200
180
160
140

(nsec)

120

10,000 pF

100

RISE

t

80

4700 pF

60
40

1000 pF

20

0

4681012

22,000 pF

V

DD

14 16 18

9A HIGH SPEED MOSFET DRIVERS

Fall Time vs. Supply Voltage

180
160
140
120

(nsec)

100

FALL

t

80
60

4700 pF

40
20

1000 pF

0

4 6 8 1012141618

22,000 pF

10,000 pF

V

DD

Rise TIme vs. Capacitive Load

300

250

200

(nsec)

150

RISE

t

100

50

0

100 1000 10,000 100,000

C

(pF) C

LOAD

5V

10V

Rise and Fall Times vs. Temperature

90

C

= 10,000 pF

80

70

60

TIME (nsec)

50

40

LOAD

V = 15V

DD

t

RISE

t

FALL

15V

Fall TIme vs. Capacitive Load

300

250

200

(nsec)

150

FALL

t

100

50

0

100 1000 10,000

(pF)

LOAD

Propagation Delay vs. Supply Voltage

50

C = 1000 pF

LOAD

45

40

35

TIME (nsec)

30

t

D1

t

D2

5V

10V

15V

100,000

4-234

30

–40 0 40 80 120

T

(°C)

A

25

810121416184

6

V

DD

TELCOM SEMICONDUCTOR, INC.

9A HIGH SPEED MOSFET DRIVERS

TYPICAL CHARACTERISTICS (Cont.)

Supply Current vs. Capacitive Load

(V = 18V)

DD

220
200

80
60
40
20

0

100

2 MHz

1.125 MHz

632 kHz

200 kHz

C (pF)

LOAD

100,00010,0001000

180
160
140
120
100

SUPPLY

I (mA)

63.2 kHz

20 kHz

Supply Current vs. Frequency

(V = 18V)

DD

180

160
140
120

100

0.1 µF

80

SUPPLY

60

I (mA)

40
20

0

10 100 1000

47,000 pF

10,000 pF

FREQUENCY (kHz)

22,000 pF

470 pF

1

TC4421
TC4422

2

3

4700 pF

Supply Current vs. Capacitive Load,

= 12)

(V

180
160
140
120
100

SUPPLY

I (mA)

2 MHz
80
60
40
20

0

100 100,00010,0001000 10 100 1000

1.125 MHz

632 kHz

200 kHz

DD

C (pF)

LOAD

63.2 kHz

20 kHz

180
160
140
120
100

SUPPLY

I (mA)

Supply Current vs. Capacitive Load

(V = 6V)

DD

100

90
80
70
60
50
40

SUPPLY

I (mA)

2 MHz

30
20
10

0

100 100,00010,0001000

632 kHz

C (pF)

LOAD

200 kHz

63.2 kHz

20 kHz

120

100

SUPPLY

I (mA)

Supply Current vs. Frequency

(V = 12)

DD

22,000 pF

10,000 pF

47,000 pF

80
60

0.1 µF

40
20

0

FREQUENCY (kHz)

Supply Current vs. Frequency

(V = 6V)

DD

47,000 pF

22,000 pF

80

4700 pF

60

40

0.1 µF

20

0

10 100 1000

10

100 1000

FREQUENCY (kHz)

4700 pF

470 pF

10,000 pF

470 pF

4

5

6

7

8

TELCOM SEMICONDUCTOR, INC.

4-235

TC4421
TC4422

TYPICAL CHARACTERISTICS (Cont.)

9A HIGH SPEED MOSFET DRIVERS

Propagation Delay vs. Input Amplitude

120
110
100

90
80
70
60
50

TIME (nsec)

40
30
20
10

0

12345678910

Crossover Energy vs. Supply Voltage

–6

10

–7

10

A•sec

t

D2

t

D1

INPUT (V)

VDD = 10V

C

= 10000V

LOAD

Propagation Delay vs. Temperature

50

45

40

35

T (°C)

A

t

D1

TIME (nsec)

30

25

20

–40 –20 0 20 40 60 80 100 120–60

t

D2

Quiescent Supply Current vs. Temperature

3

10

V = 18V

DD

INPUT = 1

2

10

QUIESCENT

I (µA)

INPUT = 0

4-236

–8

10

4681012141618

NOTE:

The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.

V

DD

High-State Output Resistance

vs. Supply Voltage

6

5.5
5

4.5
4

Ω

3.5
3

DS(ON)

2.5

R ( )

2

1.5
1

0.5

4 6 8 1012141618

TJ= 150° C

TJ= 25° C

V (V)

DD

–40 –20 0 20 40 60 80 100 120–60

T (°C)

J

Low-State Output Resistance

vs. Supply Voltage

6

5.5
5

4.5
4

Ω

3.5
3

DS(ON)

2.5

R ( )

2

1.5
1

0.5

4 6 8 1012141618

TJ= 150°C

TJ= 25°C

V (V)

DD

TELCOM SEMICONDUCTOR, INC.