Page 1
TC4421A/TC4422A
9A High-Speed MOSFET Drivers
Features
• High Peak Output Current: 10A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A (max.)
• Matched Fast Rise and Fall Times:
- 15 ns with 4,700 pF Load
- 135 ns with 47,000 pF Load
• Matched Short Propagatio n Delays: 42 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typ.)
- With Logic ‘0’ Input – 33 µA (typ.)
• Low Output Impedance: 1.2Ω (typ.)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible wi th the TC4420/T C 442 9
and TC4421/TC4422 MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFN
Package
Applications
• Line Drivers for Extra Heavily-Loaded Lines
• Pulse Generators
• Driving the Largest MOSFETs and IGBTs
• Local Power ON/OFF Switch
• Motor and Solenoid Driver
• LF Initiator
General Description
The TC4421A/TC4422A are improved versions of the
earlier TC4421/TC4422 family of single-output
MOSFET drivers. These devices are high-current
buffer/drivers capable of driving large MOSFETs and
Insulated Gate Bipolar Transistors (IGBTs). The
TC4421A/TC4422A have matched output rise and fall
times, as well as matched leading and falling-edge
propagation delay times. The TC4421A/TC4422A
devices also have very low cross-conduction current,
reducing the overall power dissipation of the device.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1A inductive current of either polarity
being forced back into their outputs. In addition, all
terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421A/TC4422A inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages, in addition to a wide operating temperature
range, the TC4421A/TC4422A family of 9A MOSFET
drivers fit into m ost any applic ation where hig h gate/line
capacitance drive is required.
Package Types
8-Pin
PDIP/SOIC
V
1
DD
INPUT
2
TC4421A
NC
3
TC4422A
GND
4
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
© 2005 Microchip Technology Inc. DS21946A-page 1
(1)
TC4421A TC4422A
V
8
7
OUTPUT
6
OUTPUT
GND
5
DD
V
DD
OUTPUT
OUTPUT
GND
V
DD
INPUT
NC
GND
8-Pin DFN
1
2
TC4421A
TC4422A
3
4
(2)
TC4421A TC4422A
V
8
DD
7
OUTPUT
6
OUTPUT
5
GND
V
DD
OUTPUT
OUTPUT
GND
5-Pin TO-220
TC4421A
TC4422A
DD
V
GND
GND
INPUT
OUTPUT
Tab is
Common
to V
DD
Page 2
TC4421A/TC4422A
Functional Block Diagram
TC4421A
130 µA
300 mV
Input
4.7V
GND
Effective
Input
C = 25 pF
TC4422A
Non-Inverting
Inverting
Cross-Conduction
Reduction and Pre-Drive
Circuitry
V
DD
Output
Output
DS21946A-page 2 © 2005 Microchip Technology Inc.
Page 3
TC4421A/TC4422A
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage.....................................................+20V
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Input Voltage....................(VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD)...................................50 mA
DC CHARACTERISTICS
Electrical Specifications: Unless other wise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
Logic ‘0’, Low Input Voltage V
Input Current I
Input Voltage V
IH
IL
IN
IN
Output
High Output Voltage V
Low Output Voltage V
Output Resistanc e, Hi gh R
Output Resistanc e, Low R
Peak Output Current I
Continuous Output Current I
Latch-Up Protection
OHVDD
OL
OH
OL
PK
DC
I
REV
Withstand Reverse Current
Switching Time (Note 1)
Rise Time t
Fall Time t
Propagation Delay Time t
Propagation Delay Time t
R
F
D1
D2
Power Supply
Power Supply Current I
Operating Input Voltage V
S
DD
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
2.4 1.8 — V
—1.30.8V
–10 — +10 µA 0V ≤ VIN ≤ V
–5 — VDD – 0.3 V
– 0.025 — — V DC T e st
— — 0.025 V DC Test
—1.251.5Ω I
—0.81.1Ω I
OUT
OUT
—10.0—AVDD = 18V
2 — — A 10V ≤ VDD ≤ 18V, TA = +25°C
(TC4421A/TC4422A CAT only)
(Note 2)
— >1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec
—2834nsFigure 4-1, CL = 10,000 pF
—2632nsFigure 4-1, CL = 10,000 pF
—3845nsFigure 4-1, CL = 10,000 pF
—4249nsFigure 4-1, CL = 10,000 pF
— 130 250 µA VIN = 3V
—35100µAV
IN
4.5 — 18 V
DD
= 10 mA, VDD = 18V
= 10 mA, VDD = 18V
= 0V
© 2005 Microchip Technology Inc. DS21946A-page 3
Page 4
TC4421A/TC4422A
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
Logic ‘0’, Low Input Voltage V
Input Current I
IH
IL
IN
Output
High Output Voltage V
Low Output Voltage V
Output Resistanc e, Hi gh R
Output Resistanc e, Low R
OHVDD
OL
OH
OL
Switching Time (Note 1)
Rise Time t
Fall Time t
Propagation Delay Time t
Propagation Delay Time t
R
F
D1
D2
Power Supply
Power Supply Current I
Operating Input Voltage V
S
DD
Note 1: Switching t imes ensured by design.
2.4 — — V
——0.8V
–10 — +10 µA 0V ≤ VIN ≤ V
DD
– 0.025 — — V DC Test
——0.025VDC Test
——2.0Ω I
——1.6Ω I
= 10 mA, VDD = 18V
OUT
= 10 mA, VDD = 18V
OUT
—3845nsFigure 4-1, CL = 10,000 pF
—3340nsFigure 4-1, CL = 10,000 pF
—50.460nsFigure 4-1, CL = 10,000 pF
—5360nsFigure 4-1, CL = 10,000 pF
— 200 500 µA VIN = 3V
— 50 150 µA VIN = 0V
4.5 — 18 V
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (V) T
Maximum Junction Temperature T
Storage Temperature Range T
Package Thermal Resistances
Thermal Resistance, 5L-TO-220 θ
Thermal Resistance, 8L-6x5 DFN θ
Thermal Resistance, 8L-PDIP θ
Thermal Resistance, 8L-SOIC θ
A
J
A
JA
JA
JA
JA
–40 — +125 °C
— — +150 °C
–65 — +150 °C
— 71 — °C/W Without heat sink
— 33.2 — °C/W Typical 4-layer board with
—125—°C/W
—155—°C/W
≤ 18V.
DD
vias to ground plane
DS21946A-page 4 © 2005 Microchip Technology Inc.
Page 5
TC4421A/TC4422A
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables prov id ed following this note are a statistical s umm ar y b as ed on a limited num ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
180
160
140
120
100
80
60
Rise Time (ns)
40
20
0
4 6 8 1012141618
10,000 pF
1,000 pF
22,000 pF
100 pF
Supply Voltage (V)
FIGURE 2-1: Rise Time vs. Supply Voltage.
300
250
200
150
100
Rise Time (ns)
50
0
100 1000 10000 100000
Capacitive Load (pF)
5V
10V
15V
300
250
200
150
100
Fall Time (ns)
50
0
100 1000 10000 100000
Capacitive Load (pF)
5V
10V
15V
FIGURE 2-4: Fall Time vs. Capacitive Load.
55
VDD = 15V
50
45
40
35
Time (ns)
30
25
20
-40 -25 -10 5 20 35 50 65 80 95 110 125
t
RISE
t
FALL
Temperature (°C)
FIGURE 2-2: Rise Time vs. Capacitive Load.
180
160
140
120
100
80
60
Fall Time (ns)
40
20
0
4 6 8 10 12 14 16 18
1,000 pF
22,000 pF
10,000 pF
100 pF
Supply Voltage (V)
FIGURE 2-3: Fall Time vs. Supply Voltage.
FIGURE 2-5: Rise and Fall Times vs. Temperature.
-7
1E-7
10
-8
1E-8
10
Crossover Energy (A·sec)
-9
1E-9
10
4 6 8 10 12 14 16 18
Supply Voltage (V)
FIGURE 2-6: Crossover Energy vs Supply Voltage.
© 2005 Microchip Technology Inc. DS21946A-page 5
Page 6
TC4421A/TC4422A
= 10,000 pF
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
80
75
C
LOAD
70
65
60
55
50
45
40
Propagation Delay (nS)
35
t
D2
t
D1
30
4 6 8 10 12 14 16 18
Supply Voltage (V)
FIGURE 2-7: Propagation Delay vs. Supply Voltage.
75
70
65
60
55
50
45
Propagation Delay (ns)
t
t
D2
D1
40
2345678910
Input Amplitude (V)
VDD = 12V
140
120
100
(µA)
INPUT = High
80
60
QUIESCENT
I
40
INPUT = Low
20
4 6 8 10 12 14 16 18
Supply Voltage (V)
FIGURE 2-10: Quiescent Supply Current vs. Supply Voltage.
220
VDD = 18V
200
180
160
140
(µA)
120
100
QUIESCENT
I
80
60
40
20
INPUT = High
INPUT = Low
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-8: Propagation Delay vs. Input Amplitude.
60
VDD = 12V
V
= 5V
IN
55
C
= 10,000 pF
LOAD
50
t
45
40
35
Propagation Delay (ns)
D2
t
D1
30
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-9: Propagation Delay vs. Temperature.
FIGURE 2-11: Quiescent Supply Current vs. Temperature.
2.0
VDD = 12V
1.9
1.8
1.7
1.6
1.5
V
IH
1.4
1.3
1.2
Input Threshold (V)
V
IL
1.1
1.0
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (°C)
FIGURE 2-12: Input Threshold vs. Temperature.
DS21946A-page 6 © 2005 Microchip Technology Inc.
Page 7
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
:
:
TC4421A/TC4422A
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
Input Threshold (V)
1.1
1.0
4 6 8 1012141618
V
IH
V
IL
Supply Voltag e (V)
FIGURE 2-13: Input Threshold vs. Supply Voltage.
5.0
4.5
4.0
3.5
)
3.0
(
2.5
OUT-HI
2.0
R
1.5
1.0
0.5
0.0
TJ = 25°C
4 6 8 1012141618
TJ = 150°C
Supply Voltage (V)
VIN = 5V (TC4422A)
= 0V (TC4421A)
V
IN
180
VDD = 18V
160
140
120
100
80
60
40
Supply Current (mA)
20
0
100 1,000 10,000 100,000
2 MHz
Capacitive Load (pF)
200 kHz
1 MHz
100 kHz
50 kHz
FIGURE 2-16: Supply Current vs.
Capactive Load (V
200
VDD = 12V
180
160
140
120
100
80
60
40
Supply Current (mA)
20
0
100 1,000 10,000 100,000
= 18V).
DD
2 MHz
1 MHz
50 kHz
Capacitive Load (pF)
200 kHz
100 kHz
10 kHz
10 kHz
FIGURE 2-14: High-State Output Resistance vs. Supply Voltage.
3.5
3.0
2.5
)
(
2.0
1.5
OUT-LO
R
1.0
0.5
0.0
4 6 8 1012141618
TJ = 150°C
TJ = 25°C
Supply Voltage (V)
VIN = 0V (TC4422A)
V
= 5V (TC4421A)
IN
FIGURE 2-15: Low-State Output Resistance vs. Supply Voltage.
FIGURE 2-17: Supply Current vs.
Capactive Load (V
220
VDD = 6V
200
180
160
140
120
100
80
60
40
Supply Current (mA)
20
0
100 1,000 10,000 100,000
= 12V).
DD
2 MHz
10 kHz
Capacitive Load (pF)
1 MHz
200 kHz
100 kHz
50 kHz
FIGURE 2-18: Supply Current vs.
Capactive Load (V
DD
= 6V).
© 2005 Microchip Technology Inc. DS21946A-page 7
Page 8
TC4421A/TC4422A
F
47,000 pF
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
180
VDD = 18V
160
140
120
100
Supply Current (mA)
47,000 pF
0.1 µF
80
60
40
20
0
10 100 1000 10000
Frequency (kHz)
10,000 pF
22,000 pF
470 pF
1000 pF
FIGURE 2-19: Supply Cur re nt vs.
Frequency (V
200
180
160
140
120
100
80
60
40
Supply Current (mA)
20
0
10 100 1000 10000
DD
VDD = 12V
47,000 pF
0.1 µ
= 18V).
10,000 pF
22,000 pF
1000 pF
470 pF
Frequency (kHz)
220
VDD = 6V
200
180
160
140
120
100
80
60
40
Supply Current (mA)
20
0
10 100 1000 10000
0.1 µF
Frequency (kHz)
22,000 pF
10,000 pF
1000 pF
470 pF
FIGURE 2-21: Supply Current vs.
Frequency (V
DD
= 6V).
FIGURE 2-20: Supply Cur re nt vs.
Frequency (V
= 12V).
DD
DS21946A-page 8 © 2005 Microchip Technology Inc.
Page 9
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
TC4421A/TC4422A
Pin No.
8-Pin PDIP,
SOIC
11—VDDSupply input, 4.5V to 18V
2 2 1 INPUT Control input, TTL/CMOS-compatible input
3 3 — NC No connection
4 4 2 GND Ground
5 5 4 GND Ground
6 6 5 OUTPUT CMOS push-pull output
7 7 — OUTPUT CMOS push-pull output
883V
—PAD— NCExposed metal pad
——TABV
Pin No.
8-Pin DFN
3.1 Supply Input (VDD)
The VDD input is the bias supp ly for the MO SFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacito r
should be chos en base d on the capaciti ve load th at is
being driven. A minimum val ue of 1. 0µF is suggested.
Pin No.
5-Pin TO-220
Symbol Description
DD
DD
Supply input, 4.5V to 18V
Metal tab is at the VDD potential
3.3 CMOS Push-Pull Output
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4 Ground
3.2 Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevent s output glitchin g even when the
rise and fall time of the input signal is very slow.
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor . The ground pins sh ould be tie d into a g round
plane or have very short traces to the bias supply
source return.
3.5 Exposed Metal Pad
The exposed met al p ad of the 6x5 DFN pac ka ge i s n ot
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a Printe d Circui t Board (PC B) to a id in
heat removal from the package.
3.6 Metal Tab
The metal tab of the TO-220 package is connected to
the V
can be used as a current carrying path for the device.
© 2005 Microchip Technology Inc. DS21946A-page 9
potential of the dev ice. T his co nnect ion to V
DD
DD
Page 10
TC4421A/TC4422A
4.0 APPLICATIONS INFORMATION
V
= 18V
DD
0.1 µF
Input
0.1 µF
1
V
26
Input
DD
8
V
DD
Output
Output
7
4.7 µF
Output
= 10,000 pF
C
L
+18V
Output
GND GND
54
+18V
Input: 100 kHz,
Output
square wave,
t
= t
FALL
≤ 10 nsec
RISE
Note: Pinout shown is for the DFN, PDIP and SOIC packages.
+5V
Input
0V
0V
+5V
Input
0V
0V
10%
t
D1
t
F
90%
10%
Inverting Driver
TC4421A
10%
90%
t
D1
Non-Inverting Driver
TC4422A
10%
90%
t
D2
t
R
90%
10%
90%
t
t
R
D2
90%
tF
10%
FIGURE 4-1: Switching Time Test Circuits.
DS21946A-page 10 © 2005 Microchip Technology Inc.
Page 11
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
TC4421A/TC4422A
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
8-Lead DFN
XXXXXXX
XXXXXXX
XXYYWW
NNN
8-Lead PDIP (300 mil)
Example:
TC4421A
XXXXXXXXX
VAT^^
0514256
Example
TC4421A
VMF
^
0514
256
Example:
3
e
:
3
e
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
TC4421A
e
PA ^ 256
0514
Example
TC4421A
3
e
SN 0514
256
3
:
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
3
e
Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( )
3
e
can be found on the outer packaging for this package.
Note: In the event the full M icroc hip p art numb er cann ot be marked o n one line, it wil l
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2005 Microchip Technology Inc. DS21946A-page 11
Page 12
TC4421A/TC4422A
5-Lead Plastic Transistor Outline (AT) (TO-220)
L H1
b
Q
e1
e3
e
EJECTOR PIN
C1
J1
D
Units
Dimension Limits
Lead Pitch
Overall Lead Centers e1 .263
Space Between Leads e3 .030 1.02.040 0.76
Overall Height
Overall Width
Overall Length D
Flag Length H1 .234 6.55.258 5.94
Flag Thickness F .045 1.40.055 1.14
Through Hole Center
Through Hole Diameter P .146 .156 3.71 3.96
Lead Length
Lead Thickness
Lead Width
Mold Draft Angle
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" (0.254mm) per side.
JEDEC equivalent: TO-220
Drawing No. C04-036
e
A
E
Q
L
J1Base to Bottom of Lead .090 2.29.115 2.92
C1
b
a
E
ØP
(5X)
a
A
F
INCHES*
MIN
.060
.160 4.06
.385
.560
.103 2.87.113 2.62
.540
.014
3° 7° 3° 7°
.072 1.52 1.83
.273 6.68 6.93
.190
.415 9.78 10.54
.590 14.22 14.99
.560 13.72
.022 0.36 0.56
MILLIMETERS
MINMAX
MAX
4.83
14.22
1.020.64.040.025
DS21946A-page 12 © 2005 Microchip Technology Inc.
Page 13
TC4421A/TC4422A
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
© 2005 Microchip Technology Inc. DS21946A-page 13
Page 14
TC4421A/TC4422A
8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)
E1
D
2
n
E
β
eB
Number of Pins
Pitch
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Length D .3 60 .373 .385 9.14 9.46 9.78
Tip to Seating Plan e L .125 .130 .135 3.18 3.30 3.43
Lead Thickness
Upper Lead Width
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing §
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
Dimension Limits MIN NOM MAX MIN NOM MAX
1
α
A
c
Units INCHES* MILLIMETERS
n
p
c
B1
eB
α
β
.008 .012 .015 0.20 0.29 0.38
.045 .058 .070 1.14 1.46 1.78
.310 .370 .430 7.87 9.40 10.92
A1
B1
B
88
.100 2.54
5 10 15 5 10 15
5 10 15 5 10 15
A2
L
p
DS21946A-page 14 © 2005 Microchip Technology Inc.
Page 15
TC4421A/TC4422A
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
Number of Pins
Pitch
Foot Angle
Lead Thickness
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
n
45°
c
β
n
p
φ
c
α
β
1
h
A
φ
L
048048
A1
MILLIMETERSINCHES*Units
88
1.27.050
α
A2
MAXNOMMINMAXNOMMINDimension Limits
1.751.551.35.069.061.053AOverall Height
1.551.421.32.061.056.052A2Molded Package Thickness
0.250.180.10.010.007.004A1Standoff §
6.206.025.79.244.237.228EOverall Width
3.993.913.71.157.154.146E1Molded Package Width
5.004.904.80.197.193.189DOverall Length
0.510.380.25.020.015.010hChamfer Distance
0.760.620.48.030.025.019LFoot Length
0.250.230.20.010.009.008
0.510.420.33.020.017.013BLead Width
1512015120
1512015120
© 2005 Microchip Technology Inc. DS21946A-page 15
Page 16
TC4421A/TC4422A
NOTES:
DS21946A-page 16 © 2005 Microchip Technology Inc.
Page 17
APPENDIX A: REVISION HISTORY
Revision A (May 2005)
• Original Release of thi s Document.
TC4421A/TC4422A
© 2005 Microchip Technology Inc. DS21946A-page 17
Page 18
TC4421A/TC4422A
NOTES:
DS21946A-page 18 © 2005 Microchip Technology Inc.
Page 19
TC4421A/TC4422A
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery , refer to the factory or the listed sales office.
PART NO. X XX
Device
PackageTemperature
XXX
Tape & Reel
Range
Device: TC4421A: 9A High-Speed MOSFET Driver, Inverting
Temperature Range: V = -40°C to +125°C
Package: * AT = TO-220, 5-lead
TC4422A: 9A High-Speed MOSFET Driver, Non-Inverting
MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
PA = Plastic DIP (300 mil Body), 8-lead
OA = Plastic SOIC (150 mil Body), 8-lead
OA713 = Plastic SOIC (150 mil Body), 8-lead
*All package offerings are Pb Free (Lead Free).
(Tape and Reel)
(Tape and Reel)
Examples:
a) TC4421AVAT: 9A High-Speed Inverting
b) TC4421AVOA: 9A High-Speed Inverting
c) TC4421AVMF: 9A High-Speed Inverting
a) TC4422AVPA: 9A High-Speed
b) TC4422AVOA: 9A High-Speed
c) TC4422AVMF: 9A High-Speed
MOSFET Driver,
TO-220 package,
-40°C to +125°C.
MOSFET Driver,
SOIC package,
-40°C to +125°C.
MOSFET Driver,
DFN package,
-40°C to +125°C.
Non-Inverting MOSFET
Driver, PDIP package,
-40°C to +125°C.
Non-Inverting
MOSFET Driver,
SOIC package,
-40°C to +125°C.
Non-Inverting MOSFET
Driver, DFN package,
-40°C to +125°C.
© 2005 Microchip Technology Inc. DS21946A-page 19
Page 20
TC4421A/TC4422A
NOTES:
DS21946A-page 20 © 2005 Microchip Technology Inc.
Page 21
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are com mitted to continuously improving the code protect ion f eatures of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digit al Mill ennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. Use of M icrochip’s prod ucts as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, K
EELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Tec hnology Incor porated in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Linear Active Thermistor,
MPASM, MPLIB, MPLINK, MPSI M, PICkit, PI C DEM,
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,
PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode,
Smart Serial, SmartTel, Total Endurance and WiperLock are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2005, Microchip Technology Inc orporated, Pr inted in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
®
8-bit MCUs, KEELOQ
®
code hopping
© 2005 Microchip Technology Inc. DS21946A-page 21
Page 22
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
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Tel: 770-640-0034
Fax: 770-640-0307
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Fax: 82-2-558-5932 or
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EUROPE
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Tel: 44-118-921-5869
Fax: 44-118-921-5820
04/20/05
DS21946A-page 22 © 2005 Microchip Technology Inc.
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