Datasheet TC429EPA, TC429CPA, TC429MJA Datasheet (Microchip Technology)

Page 1
M
TC429
6A Single High-Speed, CMOS Power MOSFET Driver
Features
• High Peak Output Current: 6A
• Wide Operating Range: 7V to 18V
• High Impedance CMOS Logic Input
• Logic Input Threshold Independent of Supply Voltage
• Low Supply Current
- With Logic 1 Input – 5mA Max
- With Logic 0 Input – 0.5mA Max
• Output Voltage Swing Within 25mV of Ground or V
DD
• Short Delay Time: 75nsec Max
• High Capacitive Load Drive Capability
-t
, t
RISE
C
LOAD
= 35nsec Max With
FALL
= 2500pF
Applications
• Switch-Mode Power Supp lie s
• CCD Drivers
• Pulse Transformer Drive
• Class D Switching Amplifiers
Device Selection Table
Part Number Package Temp. Range
TC429CPA 8-Pin PDIP 0°C to +70°C TC429EPA 8-Pin PDIP -40°C to +85°C TC429MJA 8-Pin CERDIP -55°C to +125°C
General Description
The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5 output impedance and 6A peak output current drive.
A 2500pF capaciti ve load will be drive n 1 8V i n 2 5ns ec . The rapid switching times with large capacitive loads minimize MOSFET transition power loss.
A TTL/CMOS input logic level is translated into an output voltage swing that equals the supply and will swing to with in 25mV of gr ound or V swing may equal the supply. Logic input current is under 10µA, making direct interface to CMOS/bipolar switch-mode power supply controllers easy. Input “speed-up” capacitors are not required.
The CMOS design minimizes quiescent power supply current. With a logic 1 input, power supply current is 5mA maximum and decreases to 0.5mA for logic 0 inputs.
For dual devices, see the TC426/TC427/TC428, TC4426/TC4427/TC4428 and TC4426A/TC4427A/ TC4428A data sheets.
For noninverting applications, or applications requiring latch-up protection, see the TC4420/TC4429 data sheet.
. Input voltage
DD
Typical Application
1,8
V
DD
Package Type
8-Pin PDIP/CERDIP
2
V
18
DD
27
INPUT
NC
36
45
NC = No internal connection NOTE: Duplicate pins must both be connected for proper operation.
2002 Microchip Technology Inc. DS21416B-page 1
TC429
V
DD
OUTPUT
OUTPUT
GNDGND
Input
GND
4,5
Effective
Input
C = 38pF
300mV
TC429
6,7
Output
Page 2
TC429
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage.....................................................+20V
*Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Input Voltage, Any Terminal
...................................V
+ 0.3V to GND 0.3V
DD
Power Dissipation (TA 70°C)
PDIP.........................................................730mW
CERDIP....................................................800mW
Derating Factor
PDIP.................................5.6mW/°C Above 36°C
CERDIP................................................6.4mW/°C
Operating Temperature Range
C Version.........................................0°C to +70°C
E Version......................................-40°C to +85°C
M Ve rsion ...................................-55°C to +125°C
Storage Temperature Range..............-65°C to +150°C
TC429 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C with 7V V
Symbol Parameter Min Typ Max Units Test Conditions
Input
V
IH
V
IL
I
IN
Output
V
OH
V
OL
R
O
I
PK
Switching Time (Note 1) t
R
t
F
t
D1
t
D2
Power Supply
I
S
Note 1: Switching times ensured by design.
Logic 1, High Input Voltage 2.4 1.8 V Logic 0, Low Input Voltage 1.3 0.8 V Input Curre n t -10 10 µA0V ≤ V
High Output Voltage VDD – 0.025 —— V Low Output Voltage ——0.025 V Output Resistance 1.8 2.5 VIN = 0.8V,
Peak Output Current 6 AVDD = 18V (Figure 3-4)
Rise Time 23 35 nsec Figure 3-1, CL = 2500pF Fall Time 25 35 nsec Figure 3-1, CL = 2500pF Delay Time 53 75 nsec Figure 3-1 Delay Time 60 75 nsec Figure 3-1
Power Supply Current
18V, unless otherwise noted.
DD
1.5 2.5
3.5
0.3
0.5
V
IN
DD
= 10mA, VDD = 18V
I
OUT
V
5
mA VIN = 3V
= 2.4V,
IN
I
= 10mA, VDD = 18V
OUT
V
= 0V
IN
DS21416B-page 2 2002 Microchip Technology Inc.
Page 3
TC429
TC429 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Over operating temperature range with 7V V
Symbol Parameter Min Typ Max Units Test Conditions
Input
V
IH
V
IL
I
IN
Logic 1, High Input Voltage 2.4 —— V Logic 0, Low Input Voltage ——0.8 V Input Current -10 10 µA0V ≤ V
Output
V
OH
V
OL
R
O
High Output Voltage VDD – 0.025 ——V Low Output Voltage ——0.025 V Output Resistance ——5 VIN = 0.8V,
——5
Switching Ti me (Note 1) t
R
t
F
t
D1
t
D2
Rise Time ——70 nsec Figure 3-1, CL = 2500pF Fall Time ——70 nsec Figure 3-1, CL = 2500pF Delay Time ——100 nsec Figure 3-1 Delay Time ——120 nsec Figure 3-1
Power Supply
I
S
Note 1: Switching times ensured by design.
Power Supply Current
— —
18V, unless otherwise noted.
DD
I
OUT
12
V
mA VIN = 3V
1
I
OUT
V
IN
IN
V
IN
DD
= 10mA, VDD = 18V
= 2.4V,
= 10mA, VDD = 18V
= 0V
2002 Microchip Technology Inc. DS21416B-page 3
Page 4
TC429
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1: PIN FUNCTION TABLE
Pin No.
(8-Pin PDIP,
CERDIP)
1V 2 INPUT Control input, TTL/CMOS compatible logic input. 3 NC No connection. 4 GND Ground. 5 GND Ground. 6 OUTPUT CMOS totem-pole output, common to Pin 7. 7 OUTPUT CMOS totem-pole output, common to Pin 6. 8V
Symbol Description
DD
DD
Supply input, 7V to 18V.
Supply input, 7V to 18V.
DS21416B-page 4 2002 Microchip Technology Inc.
Page 5
TC429
3.0 APPLICATIONS INFORMATION
3.1 Supply Bypassing
Charging and discharging large capacitive loads quickly re qui res la rge cur rents . F or exam ple , ch argi ng a 2500pF load to 18 V in 25nsec requires a 1.8A current from the devices power supply.
T o ensu re low supply im pedance over a wide frequency range, a parallel capacitor combination is recom­mended for supply bypas sing. Low-induc tance ceramic disk capacitors w ith short lead lengt hs (< 0.5 in.) shoul d be used. A 1µF film c apac itor in p aral lel with o ne or tw o
0.1µF ceramic disk capacitors normally provides adequate bypassing.
3.2 Grounding
The high-current capability of the TC429 demands careful PC board layout for best performance. Since the TC429 is an inverting driver, any ground lead impedance will ap pear as negati ve feedback which can degrade switching speed. The feedback is especially noticeable with slow rise-time inputs, such as those produced by an open-col lector outp ut with resis tor pull­up. The TC429 input s tructure includes about 300mV of hysteresis to ensure clean transitions and freedom from oscillation, but attention to layout is still recommended.
Figure 3-3 shows the feedback effect in detail. As the TC429 input begins to go positive, the output goes negative and several amperes of current flow in the ground le ad. As l ittle as 0.05 of PC trac e resistance can produce hundre ds of millivolt s at the TC429 gro und pins. If the driving logic is referenced to power ground, the effective logi c input level is reduce d and oscillations may result.
To ensure optimum device performance, separate ground traces should be provided for the logic and power connections. Con necting log ic ground di rectly to the TC429 GND pins e nsures full logic d rive to the input and fast output switching. Both GND pins should be connected to power ground.
FIGURE 3-1: INVERTING DRIVER
SWITCHING TIME TEST CIRCUIT
= 18V
V
DD
Output
CL = 2500pF
Input: 100kHz,
square wave,
t
= t
RISE
FALL
t
R
10%10%
0.1µF
18
26
Input
7
TC429
45
+5V
Input
10%
0V
18V
Output
0V
t
D1
90% 90%
t
F
t
1µF
90%
D2
FIGURE 3-2: SWITCHING SPEED
INPUT
OUTPUT
VOLTAGE (5V/DIV)
5V
TIME (100ns/DIV)
CL = 2500pF V
= 18V
S
100ns
10nsec
CL = 2500pF V
= 7V
S
INPUT
VOLTAGE (5V/DIV)
OUTPUT
5V
TIME (100ns/DIV)
2002 Microchip Technology Inc. DS21416B-page 5
100ns
Page 6
TC429
FIGURE 3-3: SWITCHING TIME
DEGRADATION DUE TO NEGATIVE FEEDBACK
+18V
TC429
2.4V
0V
Logic
Ground
Power
Ground
300 mV
1
8
2
5
4
1µF
TEK Current
Probe 6302
6,7
0.1µF0.1µF
6A PC Trace Resistance = 0.05W
18V
0V
2500pF
3.3 Input St age
The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transi stor drives a 3mA current sourc e load. With a logic “1” input, the maximum quiescent supply current is 5mA. Logic “0” input level signals reduce quiescent current to 500µA maximum.
The TC429 input is designed to provide 300mV of hysteresis, providing clean transitions and minimizing output stage current spiking when changing states. Input voltage level s are approximately 1 .5V , maki ng the device TTL compatible over the 7V to 18V operating supply range. Input current is less than 10µA over this range.
The TC429 can be directly driven by TL494, SG1526/ 1527, SG1524, SE5560 or similar switch-mode power supply integrated circuits. By off-loading the power-dri ving duties to t he TC429, the power supply controller can operate at lower dissipation, improving performance and reliability.
FIGURE 3-4: PEAK OUTPUT CURRENT
TEST CIRCUIT
+18V
1µF
18V
0V
2500pF
0V
2.4V
6,7
TEK Current
Probe 6302
0.1µF0.1µF
1
8
2
5
4
TC429
3.4 Power Dissipation
CMOS circuits usually permit the user to ignore power dissipation. Logic families such as the 4000 and 74C have outputs th at can only s upply a few milliamperes of current, an d even shorting outputs to gro und will not force enough current to destroy the dev ice. The TC429, however , can source or sink seve ral ampere s and driv e large capacitive loads at high frequency. The package power dissipation limit can easily be exceeded. Therefore, some attention should be given to power dissipation when driving low impedance loads and/or operating at high frequency.
The supply current versus frequency and supply current versus cap acitive lo ad charac teristic curv es will aid in determining power dissipation calculations. Table 3-1 lists the maximum operating frequency for several power supply voltages when driving a 2500pF load. More accurate power dissipation figures can be obtained by summing the three power sources.
Input signal duty cycle, power supply voltage and capacitive load influence package power dissipation. Given power dissipation and package thermal resis­tance, the maximum ambient operation temperature is easily calculated. The 8-pin CERDIP junction-to­ambient thermal resistance is 150°C/W. At +25°C, the package is rated at 800mW maximum dissipation. Maximum allowable chip temperature is +150°C.
DS21416B-page 6 2002 Microchip Technology Inc.
Page 7
TC429
Three components make up total package power dissipation:
Capacitive load dissipation (P
)
C
Quiescent power (PQ)
Transition power (P
)
T
The capacitive l oad-ca used d issip ati on is a direct func­tion of frequency, capacitive load and supply voltage.
The package power dissipation is:
= f C V
P
C
2
S
Where:
f = Switching frequency C = Capacitive load V
= Supply voltage
S
Quiescent power dissipation depends on input signal duty cycle. A logic low input results in a low-power dissipation mode with only 0.5mA total current drain. Logic high signals raise the current to 5mA maximum.
The quiescent power dissipation is:
= VS (D (IH) + (1 – D) IL)
P
Q
Where:
= Quiescent current with input high (5mA max)
I
H
I
= Quiescent current with input low
L
(0.5mA max)
D = Duty cycle
Transitio n po wer dis si p ation arises because the outp ut stage N- and P-channel MOS transistors are ON simultaneously for a very short period when the output changes.
The transition package power dissipation is approximately:
= f VS (3.3 x 10–9 A Sec)
P
T
An example shows the relative magnitude for each item.
C = 2500pF VS= 15V D = 50% f = 200kHz P
= Package power dissipation = PC + PT + P
D
= 113mW + 10mW + 41mW = 164mW
Maximum operating temperature = T
θJA (PD)
J
= 125°C
Where:
= Maximum allowable junction temperature
T
J
(+150°C)
θ
= Junction-to-ambient therm al resi stance
JA
(150°C/W, CERDIP)
Note: Ambient operating temperature should not
exceed +85°C for I JA devices or +125°C for MJA devices.
T ABLE 3-1: MAXIMUM OPERATING
FREQUENCIES
V
S
18V 500kHz 15V 700kHz 10V 1.3MHz
5V >2MHz
CONDITIONS: 1. CERDIP Package (θJA =150°C/W)
2. T
3. C
= +25°C
A
= 2500pF
L
f
MAX
FIGURE 3-5: PEAK OUTPUT
CURRENT CAPABILITY
5V/DIV
500mV/DIV
(5 AMP/DIV)
5V
INPUT
OUTPUT
500mV
TIME (5µs/DIV)
VS = 18V R
= 0.1
L
5µs
3.5 POWER-ON OSCILLATION
Note: It is extremely important that all MOSFET
Q
Power-on oscillations are due to trace size and layout as well as component placement. A quick fix for most applications which exhibit power-on oscillation problems is to plac e a ppro xi ma tely 10 k in series wi th the input of the MOSFET driver.
Driver applications be evaluated for the possibility of having High-Power Oscillations occurring during the power-on cycle.
2002 Microchip Technology Inc. DS21416B-page 7
Page 8
TC429
60
50
0
30
0
0
5101520
)
(
)
ge
C
L
60
50
0
30
0
0
0
5
)
e
525
50100125150
t
t
R
t
t
00
0
00
0K
)
(
)
d
t
t
90
80
0
60
50
0
075
)
(
)
e
525
50100125
t
t
0
60
50
0
30
0
0
0
(
)
010010K
)
00kHz
0kHz
d
T
C
z
0
0
00
80
60
0
5
(
)
ge
01520
)
t
t
C
C
pF
5V
50
50
0
30
0
0
0
0100
1
15V
0V
8V
5V
T
C
C
(
)
)
y
4
0816
20
ge
(
)
)
4
3
5-25
50100
50
e
(
)
C)
50
02575125
5
C
8
C
4.0 TYPICAL CHARACTERISTICS
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are pro vided for information al purposes only. The performance characte ristics listed herei n are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Rise/Fall Times vs. Supply Volta
4
nsec
IME
2
1
SUPPLY VOLTAGE (V
Supply Current vs. Capacitive Loa
7
mA
4
400kH
2
UPPLY CURRENT
1
1
2
2
CAPACITIVE LOAD (pF
Rise/Fall Times vs. Temperatur
4
2
1
-50-2
7
C
Delay Times vs. Temperatur
= +1
nsec
7
DELAY TIME
4
-50-2 C
Rise/Fall Times vs. Capacitive Loa
1
nsec
1
IME
1
CAPACITIVE LOAD (pF
Delay Times vs. Supply Volta
14
= 2500
4
1
SUPPLY VOLTAGE (V
1
12
nsec
1
ELAY TIME
1
Supply Current vs. Frequenc
4
mA
2
UPPLY CURRENT
1
FREQUENCY (kHz
1
= 1
1
Supply Current vs. Supply Volta
= +2
=
mA
UPPLY CURRENT
SUPPLY VOLTAGE (V
Supply Current vs. Temperatur
= +1
=
mA
UPPLY CURRENT
-7
-
1
DS21416B-page 8 2002 Microchip Technology Inc.
Page 9
TYPICAL CHARACTERISTICS (CONTINUED)
S
310mV
V
3
300mV
5
0
5
5
C
(
)
300
00
00
)
06080100
5V
0V
15V
15V
18V
18V
5
C
Hig
t
(
)
00
300
00
00
)
020406080100
5V
0V
15V
18V
5
t
00
00
000
00
00
600
04070100110120
)
P
TC429
Voltage Transfer Characteristics
20
TA = +2
°
1
V
1
UTPUT VOLTAGE
0
0.25 0.50 0.75 1 1.50 1.75 2
INPUT VOLTAGE (V)
1
14
12
1
MAX. POWER (mW)
4
2
Pin CERDIP
HYSTERESI
200m
1.25
Thermal Derating Curves
-Pin DI
h Output Voltage vs. Curren
400
= +2
2
1
UTPUT VOLTAGE (mV)
0204
CURRENT SOURCED (mA
Low Output Voltage vs. Curren
4
= +2
=
1
mV
2
1
UTPUT VOLTAGE
CURRENT SUNK (mA
=
1
102
AMBIENT TEMPERATURE (C
2002 Microchip Technology Inc. DS21416B-page 9
Page 10
TC429
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5.0 PACKAGING INFORMATION
5.1 Package Marking Information
Package mar k ing data not avai lable at this ti me.
5.2 Package Dimensions
-Pin Plastic DI
.260 (6.60 .240 (6.10
.045 (1.14 .030 (0.76
.400 (10.16
.348 (8.84
.200 (5.08 .140 (3.56
.150 (3.81 .115 (2.92
.110 (2.79 .090 (2.29
8-Pin CERDIP (Narrow)
.110 (2.79 .090 (2.29
.070 (1.78 .040 (1.02
.022 (0.56 .015 (0.38
.040 (1.02 .020 (0.51
.300 (7.62 .230 (5.84
.310 (7.87 .290 (7.37
.015 (0.38 .008 (0.20
.400 (10.16
.310 (7.87
Dimensions: inches (mm)
.055 (1.40) MAX
.200 (5.08 .160 (4.06
.200 (5.08 .125 (3.18
.400 (10.16
.370 (9.40
.065 (1.65 .045 (1.14
.020 (0.51 .016 (0.41
.020 (0.51) MIN
.040 (1.02 .020 (0.51
.150 (3.81
.015 (0.38 .008 (0.20
.320 (8.13 .290 (7.37
.400 (10.16
.320 (8.13
Dimensions: inches (mm)
DS21416B-page 10 2002 Microchip Technology Inc.
Page 11
TC429
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom­mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc. DS21416B-page11
Page 12
TC429
NOTES:
DS21416B-page12 2002 Microchip Technology Inc.
Page 13
TC429
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchips products as critical com­ponents in life support systems is not authorized except with express written approval by Microchip. No licenses are con­veyed, implicitly or otherwise, under any intellectual property rights.
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Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086
Hong Kong
Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, OShaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan 11F- 3, No. 2 07 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL Parc dActivite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-2 0 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820
03/01/02
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DS21416B-page 14 2002 Microchip Technology Inc.
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