Page 1
LITE-ON
SEMICONDUCTOR
TC0640H thru TC3500H
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilitie s up to 100A @ 10/1000us or 400 @
8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
Bi-Directional
VDRM IPP -
SMC
A
B
G
H
F
E
C
D
58 to 320
100
DIM. MIN. MAX.
A
B
C
D
E
F
G
H
All Dimensions in millimeter
Volts
Amperes
SMC
6.60 7.11
2.92
7.75 8.13
0.05 0.20
2.01 2.62
0.76 1.52
6.22 5.59
3.18
0.31 0.15
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
THERMA L RESIST ANCE
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
MAXIMUM RATED SURGE WAVEFORM
PP
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
(A)
500
400
250
200
160
100
SYMBOL
PP
I
TSM
I
T
STG
T
SYMBOL
Rth
Rth
△
VBR/△T
J
(J-L)
(J-A)
, PEAK PULSE CURRENT (%)
PP
I
100
50
0
J
tr tp
VALUE
100
50
-40 to +15 0
-55 to +15 0
VALUE
20
100
0.1
Peak value (Ipp)
tr= rise time to peak value
tp= De cay time to half value
Half value
TIME
REV. 0, 03-Dec-2001, KSWC02
UNIT
A
A
℃
℃
UNIT
℃
/W
℃
/W
℃
%/
Page 2
ELECTRICAL CHARACTERISTICS
TC0640H thru TC3500H
@ T
A=
℃℃℃℃
25
unless otherwise specifie d
PARAMETER
SYMBOL
UNITS
LIMIT
TC0640H
TC0720H
TC0900H
TC1100H
TC1300H
TC1500H
TC1800H
TC2300H
RATED
REPETITIVE
OFF-STATE
VOLTAGE
DRM
V
Volts uA Volts Volts mA mA mA pF
Max
58
65
75
90
120
140
160
190
OFF-STATE
LEAKAGE
CURRENT
DRM
@ V
DRM
I
BREAKOVER
VOLTAGE
BO
V
ON-STATE
VOLTAGE
T
=1.0A
@ I
T
V
BREAKOVER
CURRENT
IBO-I
BO+
HOLDING
CURRENT
H-
I
H+
I
mA
Max Max Max Min Max Min Typ
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
50
50
50
50
50
50
50
50
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
Max
800
800
800
800
800
800
800
800
OFF-STATE
CAPACITANCE
Co
200
200
200
120
120
120
120
80
TC2600H
TC3100H
TC3500H
SYMBOL
DRM
V
DRM
I
BR
V
BR
I
BO
V
BO
I
H
I
T
V
PP
I
O
C
220
275
320
Stand-o f f Voltage
Leakag e current at stand-off volta ge
Breakdown vol tage
Breakdown current
Breakover voltage
Breakover current
Holding current Note: 1
On state voltage
Peak pulse current
Off state capacitance Note: 2
5
5
5
PARAMETER
300
350
400
3.5
3.5
3.5
I
I
DRM
I
PP
BO
150
150
150
I
H
I
T
V
V
800
800
800
DRM
50
50
50
BR
I
800
800
800
80
80
80
BR
V
V
BO
V
REV. 0, 03-Dec-2001, KSWC02
NOTES: 1. IH> (VL/RL) If this criterion is not obeyed, the T
SPD
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
Triggers but does not ret urn correctly to high-resistance state.
RMS
signal; VR=2V
DC
bias.
Page 3
RATING AND CHARACTERISTICS CURVES
TC0640H thru TC3500H
FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE
100
10
1.0
V
=50V
DRM
0.1
, OFF STATE CURRENT (uA)
DRM)
0.01
I(
0.001
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE
1.10
vs JUNCTION TEMPERATURE
FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE
1.20
1.15
1.10
1.05
1.0
0.95
NORMALIZED BREAKDOWN VOLTAGE
0.90
-50 -25 0
vs JUNCTION TEMPERATURE
VBR(TJ)
V
=25℃)
BR (TJ
50 75 125 150
25
TJ, JUNCTION TEMPERATURE (℃)
100 175
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
100
V
BO (TJ
VBO(TJ)
=25℃)
1.05
1.0
NORMALIZED BREAKOVER VOLTAGE
0.95
-50 -25 0
50 75 125 150
25
100 175
TJ, JUNCTION TEMPERATURE (℃)
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
NORMALIZED HOLDING CURRENT
0.4
0.3
-50 -25 0 25 50 75 100 125
vs JUNCTION TEMPERATURE
IH (TJ)
IH (TJ=25℃)
TJ, JUNCTION TEMPERATURE (℃)
℃
TJ=25
10
, ON STATE CURRENT
(T)
I
1.0
1.0 1.5 2.0
2.5
3.0 3.5
V (T); ON STATE VOLTAGE
FIG. 6 - RELATIVE VARIATION OF JUNCTION
CAPACITANCE vs REVERSE VOLTAGE BIAS
1
CO(VR)
C
(VR = 1V)
NORMALIZE CAPACITANCE
0.1
1 10 100
O
VR, REVERSE VOLTAGE
Tj =25
f=1MHz
V
RMS
4.54.0 5.0
℃
= 1V
REV. 0, 03-Dec-2001, KSWC02
Page 4
TYPICAL CIRCUIT APPLICATIONS
TC0640H thru TC3500H
RING
TIP
FUSE
TSPD 1
TELECOM
EQUIPMENT
E.G. MODEM
RING
TIP
RING
PTC
TSPD 1
TSPD 2
PTC
PTC
TSPD 1
TSPD 2
TSPD 3
TELECOM
EQUIPMENT
E.G. ISDN
TELECOM
EQUIPMENT
E.G. LINE
CARD
TIP
The PTC (Positive Te mpe rature Co efficient) is an overcurrent prote ction dev ice
PTC
REV. 0, 03-Dec-2001, KSWC02
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