Page 1
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
Copyright 1991, Texas Instruments Incorporated
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
• High-Resolution, Solid-State Image Sensor
for NTSC B/W TV Applications
• 11-mm Image-Area Diagonal, Compatible
With 2/3” Vidicon Optics
• 754 (H) x 244 (V) Active Elements in
Image-Sensing Area
• Low Dark Current
• Electron-Hole Recombination Antiblooming
• Dynamic Range . . . More Than 60 dB
• High Sensitivity
• High Photoresponse Uniformity
• High Blue Response
• Single-Phase Clocking
• Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
description
The TC241 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W
NTSC TV applications. The device is intended to replace a 2/3-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC241 is configured into 244 lines with 780 elements in each line. Twenty-four
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image- sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the
vertical resolution and minimizing aliasing. The device can also be run as a 754 (H) by 244 (V) noninterlaced
sensor with significant reduction in the dark signal.
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip
converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability.
The TC241 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark current, high photoresponse uniformity, and single-phase clocking.
The TC241 is characterized for operation from –10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication
Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies
available from Texas Instruments.
SUB
GND
AMP GND
OUT1
OUT2
OUT3
ADB
TDB
SAG
IAG
SUB
SUB
CDB
IDB
TRG
SRG1
SRG2
SRG3
SAG
IAG
ABG
SUB
22
21
20
19
18
17
16
15
14
13
1211
10
9
8
7
6
5
4
3
2
1
DUAL-IN-LINE PACKAGE
(TOP VIEW)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Page 2
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
functional block diagram
Clearing Drain
Dark-Reference Elements
Amplifiers
OUT2
OUT3
ADB
TDB
SAG
IAG
2
3
4
5
6
7
8
OUT1
9
AMP GND GND
10
SRG3
SRG2
SRG1
TRG
CDB13IDB
14
15
16
17
18
SAG
19
IAG
ABG
20
21
Gates and Serial Registers
Multiplexer, Transfer
Storage Area
Blooming Protection
Image Area With
Top Drain
6 Dummy
Elements
Page 3
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
sensor topology diagram
Area
Image-Storage
Area
Image-Sensing
488
244
251
251
251
One 1/2-Amplitude Element
Columns
6 Dummy
1
3
753
1
24
8
8
7
780
One 1/2-Amplitude Element
Terminal Functions
TERMINAL
NAME NO.
I/O
DESCRIPTION
ABG 21 I Antiblooming gate
ADB 5 I Supply voltage for amplifier-drain bias
AMP GND 9 Amplifier ground
CDB 13 I Supply voltage for clearing-drain bias
GND 10 Ground
IAG
†
2 I Image-area gate
IAG
†
20 I Image-area gate
IDB 14 I Supply voltage for input diode bias
OUT1 8 O Output signal 1
OUT2 7 O Output signal 2
OUT3 6 O Output signal 3
SAG
†
3 I Storage-area gate
SAG
†
19 I Storage-area gate
SRG1 16 I Serial-register gate 1
SRG2 17 I Serial-register gate 2
SRG3 18 I Serial-register gate 3
SUB
†
1 Substrate and clock return
SUB
†
11 Substrate and clock return
SUB
†
12 Substrate and clock return
SUB
†
22 Substrate and clock return
TDB 4 I Supply voltage for top-drain bias
TRG 15 I Transfer gate
†
All pins of the same name should be connected together externally.
Page 4
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
detailed description
The TC241 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area,
(3) the multiplexer with serial registers and transfer gates, and (4) the buffer amplifier with charge-detection
nodes. The location of each of these blocks is shown in the functional block diagram.
image-sensing storage areas
Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are
shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are
generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate
is activated by the application of a burst of pulses every horizontal-blanking interval. This prevents blooming
caused by the spilling of charge from overexposed elements into neighboring elements. After the completion
of integration, the signal charge is transferred into the storage area. T o generate the dark reference necessary
in subsequent video-processing circuits for restoration of the video-black level, 23 full columns and one
half-column of elements at the left edge of the image-sensing area are shielded from incident light. Two full
columns and one half-column of elements at the right of the image-sensing area are also shielded from incident
light. The total number of elements per row is 780 (753 active elements plus 25 shielded elements and 2
transitional elements).
multiplexer with transfer gates and serial registers
The multiplexer and transfer-gates transfer charge line by line from the image-element columns into the
corresponding serial register and prepare it for readout. Multiplexing is activated during the horizontal-blanking
interval by applying appropriate pulses to the transfer gates and serial registers. The required pulse timing is
shown in Figure 3. A drain is included in this area to provide the capability to quickly clear the image-sensing
and storage areas of unwanted charge. Such charge can accumulate in the imager during the start-up of
operation or under special circumstances when nonstandard TV operation is desired.
buffer amplifier with charge-detection nodes
The buffer amplifier converts charge into a video signal. Figure 4 shows the circuit diagram of a charge-detection
node and one of the three amplifiers. As charge is transferred into the detection node, the potential of this node
changes in proportion to the amount of signal received. This change is sensed by an MOS transistor and, after
proper buffering, the signal is supplied to the output terminal of the image sensor . After the potential change has
been sensed, the node is reset to a reference voltage supplied by an on-chip reference generator. The reset
is accomplished by a reset gate that is connected internally to the serial register. The detection nodes and
corresponding amplifiers are located some distance from the edge of the storage area; six dummy elements
are used to span this distance. The location of the dummy elements is shown in the functional block diagram.
ABG
IAG
11.5 µm
Clocked Barrier
Virtual Barrier
Antiblooming Gate
Virtual Well
Clocked Well
Light
Antiblooming
Clocking Levels
Accumulated Charge
27 µm
Figure 1. Charge-Accumulation Process
Page 5
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SAG
Channel Stops
Virtual Phase
Clocked Phase
Figure 2. Charge-Transfer Process
Page 6
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Composite
Blanking
SRG3
SRG2
SRG 1
TRG
SAG
IAG
ABG
Blanking Interval
Horizontal
Expanded
Figure 3. Timing Diagram
Page 7
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
OUTn
ADB
SRGn
Two-Stage
Source-
Follower
Amplifier
Reset Gate
and
Output Diode
Detection Node
CCD Register
Virtual
Gate
Clocked
Gate
Reference Generator
Figure 4. Buffer Amplifier and Charge-Detection Node
Page 8
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
spurious-nonuniformity specification
The spurious-nonuniformity specification of the TC241 CCD grades –10, –20, –30, and –40 is based on several
sensor characteristics:
• Amplitude of the nonuniform pixel
• Polarity of the nonuniform pixel
– Black
– White
• Location of the nonuniformity (see Figure 5)
– Area A
– Element columns near horizontal center of the area
– Element rows near vertical center of the area
– Area B
– Up to the pixel or line border
– Up to area A
– Other
– Edge of the imager
– Up to area B
• Nonuniform pixel count
• Distance between nonuniform pixels
• Column amplitude
The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 6. In the illuminated condition,
the nonuniformity is specified as a percentage of the total illumination as shown in Figure 7.
BA
20 Pixels
Lines
11
15 Pixels
Lines
7
Pixels
360
Lines
233
Figure 5. Sensor-Area Map
Page 9
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
mV
Amplitude
t
Illumination
% of Total
t
Figure 6. Pixel-Nonuniformity, Figure 7. Pixel-Nonuniformity,
Dark Condition Illuminated Condition
The grade specification for the TC241 is as follows (CCD video-output signal is 50 mV ±10 mV):
Pixel-nonuniformity:
DARK CONDITION ILLUMINATED CONDITION
DISTANCE
NONUNIFORM PIXEL TYPE
SEPARATION
PART
PIXEL
WHITE BLACK W/B
†
% OF TOTAL
TOTAL
‡
NUMBER
AMPLITUDE, x
(
mV
)
AREA AREA AREA
ILLUMINATION
AREA A
AREA B
COUNT
‡
X Y AREA
()
A B A B A B
TC241-20 x > 3.5 0 0 0 0 0 0 x > 5 0 0 — — — —
2.5 < x ≤ 3.5 2 5 2 5 2 5 5.0 < x ≤ 7.5 2 5
TC241-30
x > 3.5 0 0 0 0 0 0 x > 7.5 0 0
12
10080A
3.5 < x ≤ 7 3 7 3 7 3 7 7.5 < x ≤ 15 3 7
TC241-40
x > 7 0 0 0 0 0 0 x > 15 0 0
15
— — —
†
White and black nonuniform pixel pair
‡
The total spot count is the sum of all nonuniform white, black, and white/black pairs in the dark condition added to the number of nonuniform black
pixels in the illuminated condition. The sum of all nonuniform combinations do not exceed the total count.
Column nonuniformity:
PART
COLUMN
WHITE BLACK
PART
NUMBER
AMPLITUDE, x
AREAS AREAS
NUMBER
(mV)
A AND B A AND B
TC241-20 x > 0.3 0 0
TC241-30 x > 0.5 0 0
TC241-40 x > 0.7 0 0
Page 10
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage range, V
CC
: ADB, CDB, IDB, TDB (see Note 1) 0 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
: ABG, IAG, SAG, SRG, TRG –15 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
–10°C to 45°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
STG
–30°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the substrate terminal.
recommended operating conditions
MIN NOM MAX UNIT
Supply voltage, V
CC
ADB, CDB, IDB, TDB 11 12 13 V
Substrate bias voltage 0 V
High level 1.5 2 2.5
IAG
Intermediate level
§
–5
Low level –10 –9 –8
High level 1.5 2 2.5
SRG1, SRG2, SRG3
Low level –10 –9 –8
High level 2 4 6
I
nput voltage,
V
I
‡
ABG
Intermediate level
§
–2.5
V
Low level –7
High level 1.5 2 2.5
SAG
Low level –10 –9 –8
High level 1.5 2 2.5
TRG
Low level –10 –9 –8
IAG, SAG 2.05
Clock frequency, f
clock
SRG1, SRG2, SRG3, TRG 4.77
MHz
ABG 2.05
Load capacitance OUT1, OUT2, OUT3 8 pF
Operating free-air temperature, T
A
–10 45 °C
‡
The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage
levels.
§
Adjustment is required for optimal performance.
Page 11
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics over recommended operating ranges of supply voltage and operating
free-air temperature (unless otherwise noted)
PARAMETER MIN TYP
†
MAX UNIT
Dynamic range (see Note 2) Antiblooming disabled (see Note 3) 60 dB
Charge-conversion factor 1.4 1.6 1.8 µV/e
Charge-transfer efficiency (see Note 4) 0.9999 0.99995
Signal-response delay time, τ (see Note 5 and Figure 11) 18 20 22 ns
Gamma (see Note 6) 0.97 0.98
Output resistance 700 800 Ω
1/f noise (5 kHz) 0.13
Noise voltage
Random noise (f = 100 kHz) 0.11
µ
V/√H
z
Noise-equivalent signal 120 electrons
ADB (see Note 7) 20
Rejection ratio at 4.77 MHz SRG1, SRG2, SRG3 (see Note 8) 40 dB
ABG (see Note 9) 20
Supply current 5 mA
IAG 12000
SRG1, SRG2, SRG3 120
Input capacitance, C
i
ABG 4000 pF
TRG 350
SAG 14000
†
All typical values are at TA = 25 °C
NOTES: 2. Dynamic range is –20 times the logarithm of the mean-noise signal divided by the saturation-output signal.
3. For this test, the antiblooming gate must be biased at the intermediate level.
4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
an electrical input signal.
5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output-signal valid state.
6. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (this
value represents points near saturation):
ǒ
Exposure (2)
Exposure (1)
Ǔ
g
+
ǒ
Output signal (2)
Output signal (1)
Ǔ
7. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.
8. SRGn rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn.
9. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
Page 12
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
optical characteristics, TA = 40°C (unless otherwise noted)
PARAMETER MIN TYP MAX UNIT
No IR filter
Measured at V
150
Sensitivit
y
With IR filter
U
(see Notes 10 and 11)
19
mV/l
x
Saturation signal, V
sat
(see Note 12) Antiblooming disabled, interlace off 320 400 mV
Maximum usable signal, V
use
Antiblooming enabled, interlace on 180 360 mV
Interlace on 100
Blooming-overload ratio (see Note 13)
Interlace off 200
Image-area well capacity 200 x 10
3
electrons
Smear (see Note 14) See Note 15 0.00072
Dark current Interlace off TA = 21°C 0.027 nA/cm
2
TC241-30 15
Dark signal (see Note 16)
TC241-40 20
mV
p
TC241-30 3.5
Pixel uniformit
y
Output signal
= 50 mV
±10 mV
TC241-40 5
mV
p
TC241-30 0.5
Column uniformit
y
Output signal
= 50 mV
±10 mV
TC241-40 0.7
mV
Shading Output signal = 100 mV 15%
NOTES: 10. Sensitivity is measured at an integration time of 16.667 ms with a source temperature of 2856 K. A CM-500 filter is used.
11. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.
12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
13. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure.
14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image-area vertical height with recommended clock frequencies.
15. Exposure time is 16.67 ms and the fast-dump clocking rate during vertical timing is 2.05 MHz.
16. Dark-signal level is measured from the dummy pixels.
Page 13
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
DR (dynamic range)
+
camera white-clip voltage
V
n
(light input)
Lux
Enabled
With Antiblooming
Blooming Point
Well Capacity
Dependent on
Disabled
With Antiblooming
Blooming Point
Gate High Level
Upon Antiblooming
Level Dependent
DR
V
n
V
sat (min)
V
use (typ)
V
use (max)
V
O
NOTES: A. V
use (typ)
is defined as the voltage determined to equal the camera white clip. This voltage must be less than V
use
(max)
.
B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering
the V
use (typ)
, the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the
camera.
Vn = noise-floor voltage
V
sat (min)
= minimum saturation voltage
V
use (max)
= maximum usable voltage
V
use (typ)
= typical user voltage (camera white clip)
Figure 8. Typical V
sat
, V
use
Relationship
Page 14
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Slew rate between 10% and 90% = 70 to 120 V/µs
Ratio t1 : t2 at 2 MHz = 4:3
Ratio t1 : t2 at 1 MHz = 1:1
0%
VIL max
Intermediate Level
VIH min
100%
t1 t2
Figure 9. Typical Clock Waveform for ABG, IAG, and SAG
Slew rate between 10% and 90% = 300 V/µs
Ratio t1 : t2 = 1:1
0%
VIL max
10%
VIH min
100%
t1 t2
Figure 10. T ypical Clock Waveform for SRG1, SRG2, SRG3, and TRG
Hold
and
Sample
100%
90%
OUT
SRG
– 8 V
0%
– 8 V to –10 V
1.5 V to 2.5 V
CCD Delay
τ
15 ns10 ns
Figure 11. SRG and CCD Output Waveforms
Page 15
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
VERTICAL MODULATION
TRANSFER FUNCTION
(BARS PARALLEL TO SERIAL REGISTER)
0.4
0.2
0
0 0.2 0.4 0.6
MTF
0.6
0.8
Normalized Spatial Frequency
1
0.8 1
0
3.7 7.4 11.1 14.8 18.5
Spatial Frequency – Cycles/mm
λ = 400 to 700-nm Monochromatic Light
HORIZONTAL MODULATION
TRANSFER FUNCTION
(BARS PERPENDICULAR TO SERIAL REGISTER
)
0.4
0.2
0
0 0.2 0.4 0.6
MTF
0.6
0.8
Normalized Spatial Frequency
1
0.8 1
0
8.7 17.4 26.1 34.8 43.5
Spatial Frequency – Cycles/mm
λ = 400 to 700-nm Monochromatic Light
V
ADB
= 12 V
TA = 25°C
V
ADB
= 12 V
TA = 25°C
Figure 12 Figure 13
1
Noise –
10
f – Frequency – Hz
AMPLIFIER NOISE VOLTAGE
vs
FREQUENCY
100
1000
V
ADB
= 12 V
nV/ Hz
10
3
10
4
10
5
10
6
10
7
0.1
0.01
1
400 600 800 1000 1200
Responsivity – A/W
Incident Wavelength – nm
RESPONSIVITY
vs
WAVELENGTH OF INCIDENT LIGHT
Quantum Efficiency
70%
50%
30%
20%
10%
7%
5%
3%
2%
100%
V
ADB
= 12 V
TA = 25°C
TA = 25°C
Figure 14 Figure 15
Page 16
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
TMS3471C
TL1593
TC241
TMS3472A
4.7 µF
+
+
+
+
100 Ω
OUT1
OUT2
OUT3
GT3
GT1
GT2
15 pF
14.3-MHz
Oscillator
20 pF
4443424140393837363534
1
2
3
4
5
6
7
8
9
10
11
33
32
31
30
29
28
27
26
25
24
23
V
CC
1213141516171819202122
L
10
11
16
15
14
13
12
1
2
3
4
5
6
7
8
ADB
10
22
21
20
19
18
17
16
15
14
13
1
2
3
4
5
6
7
8
9
V
ABG–
ABLVL
V
ABG+
V
TMS3473B
IALVL
V
SS
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
9
8
7
6
5
4
3
2
1
11
12
13
14
15
16
17
18
19
47 kΩ
47 kΩ
100 Ω
100 Ω
100 Ω
4.7 µF
4.7 µF
4.7 µF
100 Ω
100 Ω
100 Ω
9
SC (90)
SC
BF
CBLK
CSYNC
CP1
CP2
BCP2
CP2
47 kΩ
47 kΩ
100 pF
11
12
1 kΩ
SH2, 3
SH1
1 kΩ
SH2, 3
SH1
V
CC
4.7 kΩ
V
CC
ABS2
ABS1
ABS0
ADB
V
CC
V
SS
V
ABLVL
IALVL
V
ABG+
V
ABG–
12 V
5 V
–10 V
2 V
–2.5 V
–5 V
4 V
–6 V
DC VOLTAGES
10
20
V
SS
V
AGB+
GND
PD
SAIN
MIDSEL
ABIN
IAIN
I
/N
IALVL
V
AGB–
V
CC
SAOUT
ABOUT
IAOUT
ABLVL
V
CC
ABSR
IASR
V
SS
DLADJ
GND
PD
SRG2,3IN
SRG1IN
TRGIN
2,3PC1
2,3PC2
SSR
10
V
SS
20
V
SS
1PC2
1PC1
V
CC
SRG3OUT
SRG2OUT
SRG1OUT
TRGOUT
V
CC
TSR
SUB
ABG
IAG
SAG
SRG3
SRG2
SRG1
TRG
IDB
CDB
SUB
SUB
IAG
SAG
TDB
ADB
OUT3
OUT2
OUT1
AMPGND
GND
SUB
ANLGV
CC
AIN1
CIN1
IAN2
CIN2
AIN3
CIN3
ANLG GND
S/H
1
S/H
2
S/H3
DGTL V
CC
OUT1
OUT2
OUT3
DGTL GND
V
CC
CLK2M
HGATE
VGATE
WHTB
WHTA
VDGPSB
I/N
HIGH
PD
PS
GT
ABIN
PI
SH2, 3
SH1
GND
T
S1
S2, 3
X2
GT1
GT2
GT3
BCPS0
BCPS1
VDS
E/LFIBCP1
X1
‡
‡
‡
SUPPORT CIRCUITS
DEVICE PACKAGE APPLICATION FUNCTION
TMS3471CFS 44 pin flatpack Timing generator NTSC timing generator
TMS3472ADW 20 pin flatpack with tabs Serial driver Driver for SRG1, SRG2, SRG3, and TRG
TMS3473BDW 20 pin small outline Parallel driver Driver for ABG, IAG, and SAG
TL1593CNS 16 pin small outline (EIAJ) Sample and hold Three-channel sample-and-hold IC
Figure 16. Typical Application Circuit Diagram
†
Decoupling capacitors are not shown.
‡
TI recommends designing AC coupled systems.
Page 17
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MECHANICAL DATA
The package for the TC241 consists of a ceramic base, a glass window, and a 22-lead frame. The glass window is
sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and
fit into mounting holes with 2.54 mm (0.10 in) center-to-center spacings.
(0.217 ± 0.030)
5,50 ± 0,76
3,86 (0.152) MAX
Optical Center
27,81 (1.095) MAX
8,00 (0.315)
23,39 (0.921)
0,25 (0.010)
10,16 (0.400) TYP
2,79 (0.110)
MAX
(0.730)
18,54
2,01 (0.079)
Index Dot
9,35 (0.368)
REF
0,46 (0.018)
2,54 (0.100)
(see Note D)
18,24
(0.718)
2,01 x 2,39
(0.079 x 0.094)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
C
L
TC241 (22 pin)
Optical
(see Note B)
7/94
NOTES: A. Single dimensions are nominal.
B. The center of the package and the center of the image area are not coincident.
C. The distance from the top of the glass to the image-sensor surface is typically 1,46 mm (0.057 in). The glass is 0,95 ±0,08 mm thick
and has an index of refraction of 1.53.
D. Each pin centerline is located within 0,25 mm (0.010 in) of its true longitudinal position.
Page 18
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