Datasheet TC1040CEUA Datasheet (SGS-THOMSON Microelectronics)

UA

SOP

TC1040

Linear Building Block – Dual Low Power Comparator and

Voltage Reference with Shutdown

Features

• Combines Two Comparators and a Voltage
Reference in a Single Package

• Optimized for SingleSupply Operation

• Small Package: 8-Pin MSOP

• Ultra Low Input Bias Current: Less than100pA

• Low Quiescent Current, Operating: 10µA(Typ.)
Shutdown Mode: 6µA(Typ.)

• Rail-to-Rail Inputs and Outputs

•OperatesDowntoV

DD

=1.8V

• Referenceand One Comparator Remain Active in
Shutdown to Provide Supervisory Functions

Applications

• Power Supply Circuits

• Battery Operated Equipment

• Consumer Products

• Replacements for Discrete Components

Device Selection Table

Part Number Package

TC1040CEUA 8-Pin MSOP -40°C to +85°C

Temperature

Range

Package Type

General Description

The TC1040 is a mixed-function device combining two
comparators and a voltage reference in a single 8-pin
package. The inverting input of Comparator A and the
non-inverting input of Comparator B are internally
connected to thereference.

This increased integration allows the user to replace
two packages, which saves space, lowers supply
current and increases system performance. The
TC1040 operates from two 1.5V alkaline cells down to
V

= 1.8V. It requires only 10µA typical of supply

DD

current, which significantly extends battery life. A low
power shutdown input (SHDN

) disables one of the
comparators, placing its outputs in a high-impedance
state. This mode saves battery power and allows
comparator outputs to share common analog lines
(multiplexing). Shutdown current is 6µA(typical).

Rail-to-rail inputs and outputs allow operation from low
supply voltages with large input and output signal
swings.

Packaged in an 8-Pin MSOP, the TC1040 is ideal for
applicationsrequiring low power leveldetection.

Functional Block Diagram

OUTA

1

TC1040

8

OUTB

-Pin M

OUTB

OUTA

V

SS

INA+

INB-



2002 Microchip TechnologyInc. DS21345B-page 1

TC1040CE

8

7

6

5

V

DD

REF

SHDN

V

INA+

INB-

2

SS

3

4

A

+

–

Voltage

Reference

B

–

V

SS

7

V

DD

+

6

REF

5

SHDN

TC1040

1.0 ELECTRICAL
CHARACTERISTICS

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of t he device
at these or any other conditions above those indicated in the

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage......................................................6.0V

Voltage on Any Pin..........(V

– 0.3V) to (VDD+0.3V)

SS

operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affectdevice reliability.

Junction Temperature.......................................+150°C

Operating Temperature Range.............-40°C to +85°C

StorageTemperature Range..............-55°C to +150°C

TC1040 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD= 3.0V. Minimum and maximum values apply for TA= -40° to

+85°C and V

Symbol Parameter Min Typ Max Units Test Conditions

V

DD

I

Q

I

SHDN

Shutdown Input

V

IH

V

IL

I

SI

Comparators

(SD) Output Resistance in Shutdown 20 — — MΩ SHDN =VSS,COMPBonly

R

OUT

(SD) Output Capacitance in Sh utdown — — 5 pF SHDN =VSS,COMPBonly

C

OUT

T

SEL

T

DESEL

V

IR

V

OS

I

B

V

OH

V

OL

PSRR Power Supply Rejection Ratio 60 — — dB TA=25°C

I

SRC

I

SINK

t

PD1

t

PD2

Voltage Reference

V

REF

I

REF(SOURCE)

I

REF(SINK)

C

L(REF)

E

VREF

e

VREF

= 1.8V to 5.5V,unless otherwise specified.

DD

Supply Voltage 1.8 — 5.5 V
SupplyCurrent Operating — 10 15 µA All outputs unloaded, SHDN =V
Supply Current, Shutdown — 0.05 0.1 µA SHDN =V

InputHighThreshold 80% V
Input Low Threshold — — 20% V

——V

DD

DD

V

SS

Shutdown Input Current — — ±100 nA

Select Time (For Valid Output) — 20 — µsec (SHDN =VIHto V

R

=10kΩ to V

L

Deselect Time — 500 — nsec (SHDN =VILto V

R

=10kΩ to V

L

)

OUT

COMPB only

SS,

)

OUT

COMPB only

SS,

Input Voltage Range VSS–0.2 — VDD+0.2 V
Input Offset Voltage -5

-5

—+5+5mV VDD=3V,TA=25°C

T

=-40°Cto85°C

A

Input Bias Current — — ±100 pA TA= 25°C, INA+, INB-= VDDto V
OutputHighVoltage VDD–0.3 — — V RL=10kΩ to V
OutputLow Voltage — — 0.3 V RL=10kΩ to V

V

=1.8Vto5V

DD

OutputSource Current 1 — — mA INA+= VDD,INB-=V

OutputShorted to V

SS
DD

SS

SS

VDD=1.8V

OutputSinkCurrent 2 — — mA INA+= VSS,INB-=V

OutputShorted to V
VDD=1.8V

DD,

DD

Response Time — 4 — µsec 100mV Overdrive, CL= 100pF
Response Time — 6 — µsec 10mV Overdrive,CL= 100pF

Reference Voltage 1.176 1.200 1.224 V
Source Current 50 — — µA
Sink Current 50 — — µA
Load Capacitance — — 100 pF
Voltage Noise — 20 — µV

100Hz to 100kHz

RMS

Noise Density — 1.0 — µV/√Hz 1kHz

DD

SS

DS21345B-page 2



2002 Microchip TechnologyInc.

2.0 PIN DESCRIPTION

The description of the pins are listed i n Table 2-1.

TABLE 2-1: P IN FUNCTION TABLE

TC1040

Pin No.

(8-Pin MSOP)

1 OUTA Comparator output.
2V
3 INA+ Non-inverting input to Comparator A.
4 INB- InvertinginputtoComparator B.
5 SHDN
6 REF Voltage reference output.
7V
8 OUTB Comparator output.

Symbol Description

SS

DD

Negative power supply.

Shutdown input.

Positive power supply.



2002 Microchip TechnologyInc. DS21345B-page 3

TC1040

3.0 DETAILED DESCRIPTION

The TC1040 i s oneof a series of v ery lowpower, linear
building block products targeted at low voltage, single
supply applications. The TC1040 minimum operating
voltage is 1.8V and typical supply current is only 10µA
(fully enabled). It combines two comparators and a
voltage reference in a single package. A shutdown
mode is incorporated for easy adaptation to system
power management schemes. During shutdown, one
comparatoris disabled (i.e., powered down with output
at a high impedance).The“stillawake”comparatorand
voltage reference can be used as a wake-up timer,
power supply monitor, LDO controller or other
continuous duty circuit function.

3.1 Comparators

The TC1040 contains t wo comparators. The compara­tor’s inputrange extends beyond both supply voltages
by 200mV and the outputs will swing to within several
millivolts of thesupplies,depending on theload current
being driven. The inverting input of Comparator A and
the non-inverting input of Comparator B are internally
connected to the output of the voltage reference.

The comparators exhibit a propagation delay and
supply current which are largely independent of supply
voltage. The low input bias current and offset voltage
make them suitable f or high impedance precision
applications.

Comparator B is disabled during shutdown and has a
high impedance output. Comparator COMPA remains
active.

3.2 Voltage Reference

A 2.0 percent tolerance, internally biased, 1.20V
bandgap voltage reference is included in the TC1040.
It has a push-pull output capable of sourcing and
sinking 50µA. The voltage reference remains fully
enabled during shutdown.

4.0 TYPICAL APPLICATIONS

The TC1040 lends itself to a wide variety of
applications,particularlyin battery powered systems. It
typically finds application in power management,
processor supervisory and interface circuitry.

4.1 Wake-Up Timer

Many microcontrollers havea l ow-power “sleep” mode
thatsignificantly reduces their supply current. Typically,
the microcontrolleris placedin thismode via a software
instruction, and returns to a fully-enabled state upon
reception of an external signal (“wake-up”). Thewake­up signal isusually supplied by a hardware timer. Most
system applicationsdemandthatthis timer have along
duration (typically seconds or minutes), and consume
as l ittle supply current aspossible.

The circuit shown in Figure 4-1 is a wake-up timer
made from Comparator A. (Comparator A is used
because the wake-up timer must operate when SHDN
is active.) Capacitor C1 charges through R1 until a
voltage equal to V
“wake-up” is driven active. Upon wake-up, the
microcontroller resets the timer by forcing a logic low
on a dedicated,opendrainI/Oportpin. Thisdischarges
C1 through R4 (the value of R4 is chosen to limit
maximum current sunk by the I/O port pin). With a 3V
supply, the circuit as shown consumes typically 8µA
and f urnishes a nominal timer duration of25 seconds.

FIGURE 4-1: WAKE-UP TIMER

R1
5M

C

1

10µF

is reached, at which point the

R

Microcontroller

I/O*

Wake-Up

1/2

R4

V

DD

V

DD

COMPA

+

–

3.3 Shutdown Input

SHDN at VILdisablesonecomparator.TheSHDN input
cannot be allowed to float; whennotused, connect it to
V

. The disabled comparator’s output is in a high

DD

impedance state when shutdown is active. The
disabledcomparator’s inputsandoutputscan bedriven
from rail-to-rail by an external voltage when the
TC1040 is inshutdown.No latchup wi ll occurwhen the
device is driven to its enabled state when SHDN
to V

.

IH

DS21345B-page 4

is set

*Open Drain Port Pin

V

R

TC1040



2002 Microchip TechnologyInc.

TC1040

4.2 Precision Battery Monitor

Figure 4-2 is a precision battery low/battery dead
monitoring circuit. Typically, the battery low output
warns the user that a battery dead condition i s
imminent. Battery dead typically initiates a forced
shutdown to prevent operation at low internal supply
voltages(whichcan cause unstable system operation).

The circuit in Figure 4-2 uses a single TC1040, one­half of a TC1029, and only six external r esistors.
COMPA and COMPB provide precision voltage
detection using V
R4 set the detection threshold for BATT LOW

as a reference. Resistors R2 and

R

, while
Resistors R1 and R7 set the detection threshold for
BATT FAIL. The component values shown assert
BATT LOW

at 2.2V (typical) and BATT FAIL at 2.0
(typical). Total current consumed by this circuit is
typically 22µA at 3V. Resistors R5 and R6 provide
hysteresis for comparators COMPA and COMPB,
respectively.

4.3 External Hysteresis (Comparator)

Hysteresis can be set externally with two resistors
using positive f eedback techniques (see Figure4-3).
The design procedure for setting external comparator
hysteresis is as follows:

1. Choose the feedback resistor R

input bias current of the comparator is at most
100pA, the current through R
100nA (i.e., 1000 times the input bias current)
and retain excellent accuracy. The current
through R
R

where VRis a stable reference voltage.

C

at the comparator’s trip point is VR/

C

2. Determinethehysteresisvoltage(V

the upper andlower thresholds.

.Sincethe

C

canbesetto

C

)between

HY

3. Calculate R

as follows:

A

EQUATION 4-1:

V

HY



=

-----------

C



V

DD

SRC

RAR

4. Choose the rising threshold voltage for V
(V

).

THR

5. Calculate R

as follows:

B

EQUATION 4-2:

R

-----------------------------------------------------------=

B



---------------------



VRRA×

6. Verify the threshold voltages with these
formulas:

V

rising:

SRC

V

THR

1

1




1

–

–

-------

-------

R

R

A

C

EQUATION 4-3:

V

V

SRC

THR

falling:

VR()RA()




------­R

1

A

1



-------

++=



R

B

1



-------



R

C

EQUATION 4-4:

RAVDD×



V

THFVTHR

--------- ------------- ---

–=



R

C



2002 Microchip TechnologyInc. DS21345B-page 5

TC1040

FIGURE 4-2: PRECISION BATTERY MONITOR

3V

Alkaline

+

TC1034

TC1040

V

+

AMP1

–

DD

To System DC/DC

Converter

R2, 330k, 1%

R1, 270k, 1%

V

R

R4, 470k, 1%

R5, 7.5M

V

DD

+

COMPA

–

V

DD

–

COMPB

+

R6, 7.5M

R3, 470k, 1%

BATTLOW

BATTFAIL

FIGURE 4-3: COMPARATOR

EXTERNAL HYSTERESIS
CONFIGURATION

R

C

V

SRC

TC1040

R

A

R

B

V

DD

+

–

COMPA

1/2

V

R

V

OUT

DS21345B-page 6



2002 Microchip TechnologyInc.

TC1040

5.0 TYPICAL CHARACTERISTICS

Note: The graphs and tables provided following this noteare astatistical summary based ona limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range ( e.g., outside specified power supplyrange) and therefore outside the warranted range.

Comparator Propagation Delay

vs. Supply Voltage

7

= 25

T

°C

A

= 100pF

C

L

sec)

µ

6

Overdrive = 10mV

5

4

3.5

4 4.5 5 5.5

3

DELAY TO RISING EDGE (

2

1.5

2

Overdrive = 50mV

2.5 3

SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V)

Comparator Propagation Delay

vs. Temperature

7

Overdrive = 100mV

sec)

µ

6

V

DD

V

5

4

DELAY TO FALLING EDGE (

3

-40°C85°C25°C
TEMPERATURE (°C)

DD

V

DD

V

DD

= 5V

= 4V

= 3V

= 2V

Comparator Propagation Delay

vs. Supply Voltage

7

= 25

T

°C

A

= 100pF

C

L

sec)

µ

6

Overdrive = 10mV

5

4

Overdrive = 50mV

3

DELAY TO FALLING EDGE (

2

1.5

2

Overdrive = 100mV

2.5 3

3.5

4 4.5 5 5.5

Comparator Output Swing
vs. Output Source Current

2.5

= 25

°C

T

A

2.0

(V)

OUT

- V

DD

V

1.5

1.0

.5

V

= 1.8V

DD

0

0

12345 6

I

(mA)

SOURCE

V

V

DD

DD

= 3V

= 5.5V

Comparator Propagation Delay

vs. Temperature

7

Overdrive = 100mV

sec)

µ

6

5

4

DELAY TO RISING EDGE (

3

-40°C85°C25°C
TEMPERATURE (°C)

V

DD

V

DD

V

DD

V

DD

Comparator Output Swing

vs. Output Sink Current

2.5

= 25

T

°C

A

2.0

(V)

1.5

SS

- V

1.0

OUT

V

.5

0

012 345

V

I

SINK

DD

= 1.8V

V

DD

(mA)

V

DD

= 5.5V

= 5V

= 4V

= 2V

= 3V

= 3V

6

Comparator Output Short-Circuit

Current vs. Supply Voltage

60

50

40

30

20

10

Sourcing

0

OUTPUT SHORT-CIRCUIT CURRENT (mA)

0



2002 Microchip TechnologyInc. DS21345B-page 7

T

Sinking

12345 6

SUPPLY VOLTAGE (V)

= 85°C

A

TA = -40°C

TA = 25°C

= -40

A

T

= 85°C

T

A

T

A

C

°

= 25°C

1.240

1.220

1.200

1.180

1.160

REFERENCE VOLTAGE (V)

1.140

Reference Voltage vs.

Load Current

V

V

= 1.8V

DD

V

= 1.8V

DD

0

24

LOAD CURRENT (mA)

DD

= 3V

V

DD

Sinking

Sourcing

V

DD

V

= 3V

DD

6

8

= 5.5V

= 5.5V

4

3

2

1

0

10

0

SUPPLY AND REFERENCE VOLTAGES (V)

Line Transient

Response of V

V

DD

V

REF

100 200

TIME (µsec)

REF

300

400

TC1040

T

25

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

Reference Voltage

vs. Supply Voltage

1.25

1.20

1.15

1.10

REFERENCE VOLTAGE (V)

1.05
1

23

SUPPLY VOLTAGE (V)

Supply Current vs. Supply Voltage

12

11

A)

µ

(

10

9

8

SUPPLY CURRENT

7

4

5

6

0123456

SUPPLY VOLTAGE (V)

= 85°C

A

TA = -40°C

=

DS21345B-page 8



2002 Microchip TechnologyInc.

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

Package marking data not available at this time.

6.2 Taping Form

Component Taping Orientation for 8-Pin MSOP Devices

PIN 1

TC1040

User Direction of Feed

W

Carrier Tape, Number of Components Per Reel and Reel Size

Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size

8-Pin MSOP 12 mm 8 mm 2500 13 in

6.3 Package Dimensions

8-Pin MSOP

.026 (0.65) TYP.

.122 (3.10)
.114 (2.90)

P

Standard Reel Component Orientation
for TR Suffix Device

PIN 1

.122 (3.10)
.114 (2.90)

.197 (5.00)
.189 (4.80)

.043 (1.10)

MAX.

.016 (0.40)
.010 (0.25)



2002 Microchip TechnologyInc. DS21345B-page 9

.006 (0.15)
.002 (0.05)

6° MAX.

.028 (0.70)
.016 (0.40)

Dimensions: inches (mm)

.008 (0.20)
.005 (0.13)

TC1040

NOTES:

DS21345B-page 10



2002 Microchip TechnologyInc.

TC1040

Sales and Support

Data Sheets

Products supportedby a preliminary DataSheetmayhave an erratasheetdescribing minor operational differences and recom­mendedworkarounds.To determine if an errata sheetexists for a particulardevice, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip CorporateLiterature Center U.S. FAX: [phone]

3. The Microchip Worldwide Site (www .microchip.com)
Pleasespecify which device, revision of silicon and Data Sheet (includeLiterature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn)to receivethe most currentinformation on our products.

 2002 Microchip Technology Inc. DS21345B-page11

TC1040

NOTES:

DS21345B-page12  2002 Microchip Technology Inc.

TC1040

Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. Itis your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use ofsuch information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com­ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con­veyed, implicitly orotherwise, under any intellectual property
rights.

Trademarks

The Microchip name and logo, the Microchip logo, F ilterLab,
K

EELOQ,microID,MPLAB,PIC,PICmicro,PICMASTER,

PICSTART, PRO MATE, SEEVAL and The Embedde d Control
SolutionsCompany areregiste red trademarksof MicrochipTech­nologyIncorp or ated in the U.S.A. and other countries .

dsPIC, ECONOMONITOR, FanSense, Fle xRO M , fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode
and TotalEndurancearetrademarksofMicrochipTechnology
Incorporated in theU.S.A.

Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip TechnologyIncorporated in t he U.S.A.

All other trademarks mentioned herein are property of their
respective companies.

© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.

Printed on recycled paper.

Microchip received QS-9000 quality system
certification for its worldwide headquarters,
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Chandler and Tempe, Arizona inJuly 1999
and Mountain View, California inMarch 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its

®

PICmicro
devices, Serial EEPROMs, microperipherals,
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addition, Microchip’s quality system for the
design and manufacture of development
systemsisISO 9001certified.



2002 Microchip TechnologyInc. DS21345B-page 13

8-bit MCUs, KEELOQ®code hopping

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Kanagawa, 222-0033, Japan
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Korea

Microchip Technology Korea
168-1, Youngbo Bldg. 3Floor
Samsung-Dong, K angnam-Ku
Seoul, Korea 135-882
Tel: [phone] Fax: [phone]

Singapore

Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: [phone] Fax: [phone]

Taiwan

Microchip Technology Taiwan
11F-3, No. 207
Tung HuaNorth Road
Taipei, 105, Taiwan
Tel: [phone] Fax: [phone]

EUROPE

Denmark

Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: [phone] Fax: [phone]

France

Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: [phone] Fax: [phone]

Germany

Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: [phone] Fax: [phone]

Italy

Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: [phone] Fax: [phone]

United Kingdom

Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, EnglandRG41 5TU
Tel: [phone] Fax: [phone]

03/01/02

DS21345B-page 14

*DS21345B*



2002 Microchip Technology Inc.