Page 1
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
B
A
C
D
F
H
E
G
0
TIME
100
50
0
I , PEAK PULSE CURRENT (%)
PP
Peak Value (I )
pp
Half Value
t = rise time to peak value
r
t = decay time to half value
p
t
r
t
p
TCUDORP WEN
Features
· 100A Peak Pulse Current @ 10/1000ms
· 400A Peak Pulse Current @ 8/20ms
· 58 - 320V Stand-Off Voltages
· Oxide-Glass Passivated Junction
· Bi-Directional Protection In a Single Device
· High Off-State impedance and Low On-State
Voltage
Mechanical Data
· Case: SMB, Molded Plastic
· Plastic Material: UL Flammability
Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
· Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
· Weight: 0.093 grams (approx.)
· Marking: Date Code & Marking Code (See Page 4)
· Ordering Information: See Page 4
TB0640H - TB3500H
SURGE PROTECTIVE DEVICE
SMB
Dim Min Max
4.06 4.57
A
3.30 3.94
B
1.96 2.21
C
0.15 0.31
D
5.21 5.59
E
0.05 0.20
F
2.01 2.62
G
0.76 1.52
H
All Dimensions in mm
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Non-Repetitive Peak Impulse Current @10/1000us
Non-Repetitive Peak On-State Current @8.3ms (one-half cycle)
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Typical Positive Temperature Coefficient for Breakdown Voltage
@ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
I
pp
I
TSM
T
j
T
STG
R
qJL
R
qJA
DVBR/DT
j
100 A
50 A
-40 to +150 °C
-55 to +150 °C
20 °C/W
100 °C/W
0.1 %/°C
Maximum Rated Surge Waveform
Waveform Standard Ipp (A)
2/10 us GR-1089-CORE 500
8/20 us IEC 61000-4-5 400
10/160 us FCC Part 68 250
10/700 us ITU-T, K20/K21 200
10/560 us FCC Part 68 160
10/1000 us GR-1089-CORE 100
DS30360 Rev. 3 - 2 1 of 4 TB0640H - TB3500H
Page 2
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
TCUDORP WEN
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Part Number
TB0640H
TB0720H
TB0900H
TB1100H
TB1300H
TB1500H
TB1800H
TB2300H
TB2600H
TB3100H
TB3500H
(V) I
Off-State
Leakage
Current @
V
DRM
DRM
Breakover
Voltage
(uA) VBO (V) VT (V)
On-State
Voltage
@ IT = 1A
Breakover
Current
Min
(mA)
I
BO
Max (mA)
Holding Current
I
H
Min
(mA)
Max (mA)
Off-State
Capacitance
CO (pF)
Rated
Repetitive
Off-State
Voltage
V
DRM
58 5 77 3.5 50 800 150 800 200 T064H
65 5 88 3.5 50 800 150 800 200 T072H
75 5 98 3.5 50 800 150 800 200 T090H
90 5 130 3.5 50 800 150 800 120 T110H
120 5 160 3.5 50 800 150 800 120 T130H
140 5 180 3.5 50 800 150 800 120 T150H
160 5 220 3.5 50 800 150 800 120 T180H
190 5 265 3.5 50 800 150 800 80 T230H
220 5 300 3.5 50 800 150 800 80 T260H
275 5 350 3.5 50 800 150 800 80 T310H
320 5 400 3.5 50 800 150 800 80 T350H
Symbol Parameter
V
I
DRM
DRM
V
I
BR
V
I
BO
I
V
I
PP
C
BR
BO
H
T
O
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current NOTE: 1
On state voltage
Peak pulse current
Off-state capacitance NOTE: 2
Marking
Code
Notes: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
signal, VR = 2VDC bias.
RMS
DS30360 Rev. 3 - 2 2 of 4 TB0640H - TB3500H
Page 3
0.9
T , JUNCTION
J
TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
V = (T )
BR J
V = (T = 25°C)
BR J
0.95
1
1.05
1.1
1.15
1.2
-50
-25 0 25
50
75 100
125
150 175
NORMALIZED BREAKDOWN VOLTAGE
1
1.05
0.95
-50
NORMALIZED BREAKOVER VOLTAGE
T , JUNCTION TEMPERATURE (ºC)
J
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Temperature
1.1
-25
0
75
50
25
125
100
175
150
V = (T )
BO J
V = (T = 25°C)
BO J
1
10
100
1
1.5 3
2.52
4
3.5
5
4.5
I , ON-STATE CURRENT (A)
T
V , ON-STATE VOLTAGE (V)
T
Fig. 4 On-State Current vs. On-State Voltage
T = 25°C
j
I , OFF-STATE CURRENT (uA)
(DRM)
T , JUNCTION TEMPERATURE (°C)
J
Fig. 1 Off-State Current vs. Junction Temperature
0.001
0.01
1
0.1
10
100
-25
0
25 50 75 100 125 150
V = 50V
DRM
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.4
1.3
1.2
-50 -25
0
25 50 10075125
NORMALIZED HOLDING CURRENT
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
I = (T )
H J
I = (T = 25°C)
H J
0.1
1
1
10 100
NORMALIZED CAPACITANCE
V , REVERSE VOLTAGE (V)
R
Fig. 6 Relative Variation of Normalized Capacitance
vs. Reverse Voltage Bias
C = (V )
OR
C = (V = 1V)
O R
T = 25°C
j
f = 1 Mhz
V
RMS
= 1V
TCUDORP WEN
DS30360 Rev. 3 - 2 3 of 4 TB0640H - TB3500H
Page 4
TCUDORP WEN
XXXXX
YWW
Ordering Information
(Note 3)
Device
TB0640H-13
TB0720H-13
TB0900H-13
TB1100H-13
TB1300H-13
TB1500H-13
TB1800H-13
TB2300H-13
TB2600H-13
TB3100H-13
TB3500H-13
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Packaging Shipping
SMB 3000/Tape & Reel
Marking Information
XXXXX = Product Type Marking Code
YWW = Date Code Marking
Y = Year ex: 2 = 2002
WW = Week
Date Code Key
Year 2002 2003
Code
2 3
2004
4
DS30360 Rev. 3 - 2 4 of 4 TB0640H - TB3500H
Loading...