Datasheet TA8211AH Specification

TOSHIBA Bipolar Lin ear I nt egrated Circuit Silicon Monolith ic

TA8211AH

Dual Audio Power Amplifier

The TA8211AH is dual audio power amplifier for consumer

applications.

This IC provides an output power of 6 watts per channel
(at V
It is suitable for power amplifier of TV and home stereo.

Features

= 20 V, f = 1 kHz, THD = 10%, RL = 8 Ω).

CC

TA8211AH

· High output power: P
(V

· Low noise: Vno = 0.14 mVrms (Typ.)
(V

BW = 20 Hz~20 kHz)

· Very few external parts

· Built in thermal shut down protector circuit

· Operating supply voltage range: V

= 20 V, RL = 8 Ω, f = 1 kHz, THD = 10%)

CC

= 28 V, RL = 8 Ω, GV = 34dB, Rg = 10 kΩ,

CC

= 6 W/channel (Typ.)

out

CC (opr)

= 10~30 V (Ta = 25°C)

Block Diagram

6 9

Ripple Filter V

INPUT1

INPUT2

4

8
5

3

1

11

2

IN1

AMP1

400 W

AMP2

IN2

20 kW

20 kW400 W

CC

PW-GNDPre-GND

OUT1

OUT2

Weight: 4.04 g (typ.)

7

10

12

VCC

R

L

R

L

1

2002-02-13

Application Information

Voltage gain

The closed loop voltage gain is determined by R1, R2.

og20G

og20l

og20G

= 400 W

3

og20G

= 220 W

4

+

R

2

+

=l

V

=

~

34 (dB)

-

(a) Amplifier with gain > 34dB

=l

V

When R

~

G

40 (dB)

-

V

is given.

(b) Amplifier with gain < 34dB

=l

V

When R

~

G

30 (dB)

-

V

is given.

Cautions

TA8211AH

Input

RR

21

(dB)

W+W

400k 20

W

400

//RRR

321

(dB)

//RR

32

RRR

++

421

+

(dB)

RR

42

Input

Input

4/2

7/12

Output

5/1

8/11

R

2

400 W

R1

20 kW

Figure 1

4/2

5/1

8/11

R

2

400 W

R1

20 kW

7/12

Output

Figure 2

4/2

5/1

8/11

R

2

400 W

R1

20 kW

R

4

7/12

Output

Figure 3

This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak.
Please set the IC keeping the distance from CRT.

2

2002-02-13

Standard PCB

TA8211AH

(Bottom view)

3

2002-02-13

TA8211AH

Maximum Ratings

Characteristics Symbol Rating Unit

Supply voltage VCC 30 V
Output current (Peak/ch) I
Power dissipation PD (Note) 25 W
Operating temperature T
Storage temperature T

(Ta ==== 25°C)

O (peak)

-20~75 °C

opr
stg

2 A

-55~150 °C

Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.

Electrical Characteristics

(unless otherwise specified, V

Characteristics Symbol

Quiescent current I

Output power

Total harmonic distortion THD ¾ P
Closed loop voltage gain GV ¾ V
Open loop voltage gain GVO ¾ ¾ 60 ¾ dB
Input resistance RIN ¾ ¾ ¾ 30 ¾ kW

Ripple rejection ratio R.R. ¾

Output noise voltage Vno ¾

==== 20 V, RL ==== 600

CC

¾ Vin = 0 ¾ 75 130 mA

CCQ

P

¾ THD = 10% 5.0 6.0 ¾

out (1)

¾ THD = 1% ¾ 4.5 ¾

P

out (2)

Test

Circuit

out
out

Rg = 0, f
V

ripple

Rg = 10 kW,
BW = 20 Hz~20 kHz

9999

, Rg ==== 600

Test Condition Min Typ. Max Unit

= 2 W ¾ 0.1 0.6 %
= 0.775 Vrms (0dBm) 32.5 34.0 35.5 dB

= 100 Hz

ripple

= 0.775 Vrms (0dBm)

9999

, f ==== 1 kHz, Ta ==== 25°C)

-45 -57 ¾ dB

¾ 0.14 0.3 mVrms

Typ. DC Voltage of Each Terminal

(VCC ==== 20 V, Ta ==== 25°C)

W

Terminal No. 1 2 3 4 5 6 7 8 9 10 11 12

DC voltage (V) 2.1 2.25 GND 2.25 2.1 6.8 9.8 2.25 VCC GND 2.25 9.8

4

2002-02-13

Test Circuit

TA8211AH

VCC

INPUT1

INPUT2

1.0 mF

47 mF 47 mF

1.0 mF

4

8
5

3

1

11

2

100 mF

Ripple Filter

IN1

400 W

IN2

6 9

AMP1

20 kW

20 kW400 W

AMP2

OUT1

PW-GNDPre-GND

OUT2

10

12

1000 mF

1000 mF

7

2.2 W 2.2 W

1000 mF

RL

0.12 mF 0.12 mF

RL

5

2002-02-13

TA8211AH

160

120

(mA)

CCQ

80

40

Quiescent current I

0

0

I

CCQ

Vin = 0
Ta = 25°C

8 16 24 32 40

Supply voltage VCC (V)

, V

OUT (DC)

I

CCQ

– VCC

V

OUT (DC)

(V7, V12)

32

(V)

24

OUT (DC)

16

8

0

Output DC voltage V

– f

G

90

80

70

60

(dB)

V

50

40

30

Voltage gain G

20

10

0

30

100 300 1k

V

VCC = 20 V
RL = 8 W
V

out

3k 10k 30k 100k

Frequency f (Hz)

= 0.775 Vrms

(0dBm)

30

VCC = 20 V
RL = 8 W

10

Ta = 25°C
5
3

1

0.5

0.3

0.03

f = 10 kHz

100 Hz

1 kHz

0.1 0.3

Output power P

0.1

0.05

Total harmonic distortion THD (%)

0.02

THD – P

out

1 10 30

3

(W)

out

30

THD – P

10

5
3

VCC = 12 V 20 28

1

0.5

0.3

0.1

0.05

Total harmonic distortion THD (%)

0.02

0.3

1 3

Output power P

out

f = 1 kHz
RL = 8 W
Ta = 25°C

10 100 300

30

(W)

out

5

VCC = 20 V
3

RL = 8 W

P

= 2 W

out

Ta = 25°C
1

0.5

0.3

THD – f

0.1

0.05

Total harmonic distortion THD (%)

0.02
30

100 300 1k 10k 100k3k 30k

Frequency f (Hz)

C.T. – f

-10

-20

-30

-40

-50

-60

Cross talk C.T. (dB)

-70

-80

30 100 300 1k 10k 100k3k 30k

Frequency f (Hz)

VCC = 20 V
RL = 8 W
Rg = 620 W
V

= 0.775Vrms

out

(0dBm)

Ta = 25°C

6

2002-02-13

TA8211AH

-10

-20

-30

-40

-50

-60

-70

Cross talk C.T. (dB)

-80

-90

-100

30

100 300 1k

Signal source resistance Rg (W)

C.T. – Rg

VCC = 20 V
f = 1 kHz

RL = 8 W
V

Ta = 25°C

3k 10k 30k 100k

= 0.775 Vrms

out

(0dBm)

R.R. – f

-10

-20

-30

-40

-50

-60

-70

Ripple rejection ratio R.R. (dB)

-80

-90

30

100 300 1k

Frequency f (Hz)

VCC = 20 V
RL = 8 W
Rg = 620 W
V

= 0.775 Vrms

ripple

(0dBm)

3k 10k 30k

0

-10

-20

-30

-40

-50

-60

-70

Ripple rejection ratio R.R. (dB)

-80

-90

30

100 300 1k

Signal source resistance Rg (W)

R.R. – Rg

VCC = 20 V
RL = 8 W
f

ripple

V

ripple

Ta = 25°C

3k 10k 30k 100k

= 100Hz

= 0.775 Vrms

(0dBm)

– Rg

0.36

V

0.32

0.28

(mVrms)

0.24

no

0.20

0.16

0.12

0.08

0.04

Output noise voltage V

0

30

100 300 1k

Signal source resistance Rg (W)

no

VCC = 20 V
RL = 8 W
BW = 20 Hz~20 kHz
Ta = 25°C

3k 10k 30k 100k

– Ta

V

no

0.16

160

I

– Ta

CCQ

VCC = 20 V
Vin = 0

(mVrms)

0.12

no

0.08

(mA)

120

CCQ

80

0.04

Output noise voltage V

0

-40

-20 0

Ambient temperature Ta (°C)

VCC = 20 V
RL = 8 W
Rg = 10 kW
BW = 20 Hz~20 kHz

20 40 60 80 -40

Quiescent current I

40

0

-20 0

Ambient temperature Ta (°C)

20 40 60 80

7

2002-02-13

TA8211AH

0.5

0.3

THD – Ta

VCC = 20 V
RL = 8 W
f = 1 kHz
P

= 2 W

out

0.1

– VCC

P

16

RL = 8 W
f = 1 kHz
THD = 10%

12

(W)

out

8

out

0.05

Total harmonic distoration THD (%)

0.02

-40

-20 0

Ambient temperature Ta (ºC)

20 40 60 80 0

4

Output power P

0

8

16 24 32 40

Supply voltage VCC (V)

16

RL = 8 W
f = 1 kHz
Ta = 25°C

12

MAX (W)

D

8

MAX – VCC

P

D

– P

16

P

12

(W)

D

8

D

out

VCC = 28 V

RL = 8 W
f = 1 kHz
Ta = 25°C

24

4

Maximum power dissipation P

0

10

14

18 22 26 30

Supply voltage VCC (V)

4

Power dissipation P

0

0

20

18

4

8 12 16 20

Output power P

out

(W)

30

20

15

10

5

0

0

1

2

3

25 2550 100 17575

Ambient temperature Ta (°C)

(W)

D

Allowable power dissipation P

P

– Ta

D

1: Infinite heat sink
2: 4.1°C/W heat sink
3: 9.5°C/W heat sink

125 150

8

2002-02-13

Package Dimensions

TA8211AH

Weight: 4.04 g (typ.)

9

2002-02-13

TA8211AH

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.

000707EBF

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

10

2002-02-13

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.