Datasheet TA44914W, TA44910W, TA44912W Datasheet (DYNEX)

TA449..W

TA449..W

Asymmetric Thyristor

Advance Information

Replaces March 1998 version, DS4681-4.1 DS4681-5.0 January 2000

APPLICATIONS

■ UPS

■ Induction Heating

■ A.C. Motor Drives

■ Switch Mode Power Supplies

■ Choppers

FEATURES

■ Low Loss Asymmetrical Diffusion Structure

■ Fully Characterised For Operation up to 20kHz

■ High dI/dt and dV/dt ratings

VOLTAGE RATINGS

Type Number Repetitive Peak

Off-state Voltage

V

DRM

V

TA449 14 W
TA449 12 W
TA449 10 W

1400
1200
1000

Repetitive Peak

Reverse Voltage

V

RRM

V

10
10
10

KEY PARAMETERS

V

DRM

I

T(RMS)

I

TSM

dVdt 1000V/

1400V

400A

4000A

µs

dI/dt 1000A/µs
t

q

10.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT AND SURGE RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

TSM

I

2

t

Mean on-state current 255 A
RMS value

Surge (non-repetitive) on-state current

2

t for fusing

I

Half sine wave, duty cycle 50%,

= 80oC, Tj = 125˚C.

T

case

Tj = 125oC, tp = 1ms, VR = 0 4000 A

t

≥ 10ms 80 x 10

p

Outline type code: MU86.

UnitsMax.

400 A

3

A2s

1/12

TA449..W

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

th(j-c)

th(c-h)

T

T

vj

stg

-

Thermal resistance - junction to case

Thermal resistance - case to heatsinkR

Virtual junction temperature

Storage temperature range

Clamping force

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions

Conditions Min. Max. Units

Double side cooled

dc

- 0.07

Single side cooled

- 0.154

0.02

-

- 0.04

Clamping force 5.0kN
with mounting compound

Cathode dc
Double side

Single side

On-state (conducting) - 135

Reverse (blocking)

-

125

-40 150

4.5 5.5 kN

Typ. Max. Units

o

C/W

o

C/W- 0.133Anode dc

o

C/W

o

C/W

o

C/W

o

o

o

C

C

C

V

I

I

TM

RRM

DRM

Maximum on-state voltage At 600A peak, T

Peak reverse current At V

Off-state current At V

RRM

DRM

dV/dt Maximum linear rate of rise of off-state voltage To 60% V

Rate of rise of on-state currentdI/dt

Gate source 20V, 20Ω
tr ≤ 5µs.

I

H

I

L

t

q

Holding current Tj = 25oC, ITM = 1A, VD = 12V - 80 mA

Latching current Tj = 25oC, IG = 0.5A, VD = 12V - 300 mA

Max. turn-off time VR = DF451 voltage drop,

Tj = 125oC, ITM = 200A,
dV/dt = 400V/µs (linear to 60% V
tdIR/dt = 30A/µs Gate open.

t

gt

t

gd

Typ. turn-on time (total)

Typ. delay time -1.5 µs

= 25oC, IT = 50A,

T

j

VD = 300V, IG = 1A, dI/dt = 50A/µs,
dIG/dt = 1A/µs

= 125oC

case

, T

= 125oC

case

, T

= 125oC-1mA

case

= 125oC, Gate open circuit

DRM Tj

Non-repetitive

- 2.9 V

-40mA

- 1000 V/µs

- 1000 A/µs

- 500 A/µsRepetitive

10- µs

),

DRM

-3 µs

2/12

GATE TRIGGER CHARACTERISTICS AND RATINGS

TA449..W

V

V

V

I

P

GT

I

GT

GD

RGM

FGM

GM

G(AV)

ConditionsParameterSymbol

Gate trigger voltage V

Gate trigger current

Min. non trigger voltage -0.2 V

Peak reverse gate voltage

= 12V, RL = 3Ω, T

DWM

V

= 12V, RL = 3Ω, T

DWM

= 25oC

case

= 25oC

case

-

-

Min.

Peak forward gate current -

Peak gate power ­Average gate power

Average time 10ms maxP

Max. Units

-5V

- 400 mA

-5V

-4A

-16W

-3W

3/12

TA449..W

CURVES

Fig.1 Energy per pulse for sinusoidal pulses.

Notes:

1. VD ≤ 600V.
≤ 1V.

2. V

R

3. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

4/12

Notes:

1. VD ≤ 600V.
= 1V.

2. V

R

3. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

Fig.2 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C.

TA449..W

Notes:

1. VD ≤ 600V.
= 1V.

2. V

R

3. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

Fig.3 Maximum allowable peak on-state current vs pulse width for T

Notes:

1. dI/dt = 25A/µs.
≤ 600V.

2. V

D

= 1V.

3. V

R

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

5. Double side cooled.

Fig.4 Energy per pulse for trapezoidal pulses

case

= 90˚C.

5/12

TA449..W

Notes:

1. dI/dt = 25A/µs.
≤ 600V.

2. V

D

3. VR = 1V.

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

5. Double side cooled.

Fig.5 Maximum allowable peak on-state current vs pulse width for T

Notes:

1. dI/dt = 25A/µs.
≤ 600V.

2. V

D

= 1V.

3. V

R

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

5. Double side cooled.

Fig.6 Maximum allowable peak on-state current vs pulse width for T

case

case

= 65˚C.

= 90˚C.

6/12

Notes:

1. dI/dt = 50A/µs.

2. V

3. VR = 1V.

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

Fig.7 Energy per pulse for trapezoidal pulses.

≤ 600V.

D

TA449..W

Notes:

1. dI/dt = 50A/µs.
≤ 600V.

2. V

D

= 1V.

3. V

R

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

5. Double side cooled.

Fig.6 Maximum allowable peak on-state current vs pulse width for T

case

= 90˚C.

7/12

TA449..W

Notes:

1. dI/dt = 100A/µs.

2. V

3. VR = 1V.

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

Fig.10 Energy per pulse for trapezoidal pulses.

≤ 600V.

D

8/12

Notes:

1. dI/dt = 100A/µs.
≤ 600V.

2. V

D

= 1V.

3. V

R

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

5. Double side cooled.

Fig.11 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C.

TA449..W

Notes:

1. dI/dt = 100A/µs.
≤ 600V.

2. V

D

3. VR = 1V.

4. R.C. snubber. C = 0.22µF, R = 4.7Ω.

4. Double side cooled.

Fig.12 Maximum allowable peak on-state current vs pulse width for T

case

= 90˚C.

Fig.13 Maximum on-state conduction characteristic (Tj =

125˚C)

Fig.14 Non-repetitove sub-cycle surge on-state current and

I2t rating. (Initial Tj = 125˚C)

9/12

TA449..W

Fig.15 Gate trigger characteristics

10/12

Fig.16 Transient thermal impedance - junction to case (double side cooled)

TA449..W

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes 3.6 x 2.0 deep
(in both electrodes)

6.3

Cathode tab

Cathode

Ø 42 max

Ø19nom

Ø1.5

Gate

Ø19nom

Ø 38 max

Nominal weight: 50g

Clamping force: 3.5kN ±10%

Lead length: 250mm

Package outine type code: MU86

15.0

Anode

14.0

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Gate triggering and the use of gate characteristics AN4840
Recommendations for clamping power semiconductors AN4839
The effect of temperature on thyristor performance AN4870
Thyristor and diode measurement with a multi-meter AN4853
Turn-on performance of thyristors in parallel AN4999
Use of V

, rT on-state characteristic AN5001

TO

11/12

TA449..W

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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12/12

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© Dynex Semiconductor 2000 Publication No. DS4681-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM