Page 1
Bulletin I27105 rev. B 02/02
T..RIA SERIES
MEDIUM POWER PHASE CONTROL THYRISTORS
Features
Electrically isolated base plate
Types up to 1200 V
3500 V
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
RMS
RRM
isolating voltage
Description
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Major Ratings and Characteristics
Power Modules
50 A
70 A
90 A
Parameters T50RIA T70RIA T90RIA Units
I
T(AV)
@ T
I
T(RMS)
I
@ 50Hz 1310 1660 1780 A
TSM
@ 60Hz 1370 1740 1870 A
I2t @ 50Hz 8550 13860 15900 A2s
@ 60Hz 7800 12650 14500 A2s
2
I
√t 85500 138500 159100 A2√s
V
DRM/VRRM
T
J
50 70 90 A
70 70 70
C
80 110 141 A
100 to 1200 V
-40 to 125
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o
C
o
C
1
Page 2
T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage V
DRM/VRRM
Code peak reverse voltage peak reverse voltage @ 25°C
10 100 150
20 200 300
T50RIA 40 400 500
T70RIA 60 600 700 100
T90RIA 80 800 900
100 1000 1100
120 1200 1300
On-state Conduction
Parameter T50RIA T70RIA T90RIA Units Conditions
I
Max. average on-state current 50 70 90 A 180° conduction, half sine wave
T(AV)
@ Case temperature 70 70 70 °C
I
Max. RMS on-state current 80 110 141 A
T(RMS)
I
Maximum peak, one-cycle 1310 1660 1780 A t = 10ms No voltage
TSM
on-state, non-repetitive 1370 1740 1870 t = 8.3ms reapplied
surge current 1100 1400 1500 t = 10ms 100% V
2
I
t Maximum I2t for fusing 8550 13860 15900 A2s t = 10ms No voltage Initial TJ = TJ max.
2
√t Maximum I2√t for fusing 85500 138500 159100 A2√s t = 0.1 to 10ms, no voltage reapplied
I
V
Low level value of threshold 0.97 0.77 0.78 V (16.7% x π x I
(TO)1
T
voltage
V
High level value of threshold 1.13 0.88 0.88 (I > π x I
(TO)2
T
voltage
r
Low level value on-state 4 .1 3.6 2. 9 mΩ (16.7% x π x I
t1
slope resistance
r
High level value on-state 3. 3 3.2 2 .6 (I > π x I
t2
slope resistance
Maximum on-state voltage drop 1.60 1.55 1.55 V I
V
TM
IHMaximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25°C
I
Maximum latching current 400 mA Anode supply = 6V resistive load = 10Ω
L
Switching
Parameter T50RIA T70RIA T90RIA Units Conditions
t
Typical turn-on time 0.9 µs TJ = 25oC Vd = 50% V
gd
t
Typical reverse recovery time 3.0 µs T
rr
Typical turn-off time 110 µs T
t
q
, maximum repetitive V
, maximum non-repetitive I
RSM
DRM/IRRM
VVµA
1150 1460 1570 t = 8.3ms reapplied Sine half wave,
7800 12650 14500 t = 8.3ms reapplied
6050 9800 11250 t = 10ms 100% V
5520 8950 10270 t = 8.3ms reapplied
(AV)
T
(AV)
T
= π x I
TM
Av. power = V
gate pulse: 10V, 100µs, T
I
= 500mA, tr <= 0.5, tp >= 6µs
g
=125°C, I
J
= TJ max., I
J
-di/dt = 15A/µs, V
RRM
RRM
< I < π x I
T(AV)
T(AV)
), @ TJ max.
< I < π x I
(AV)
T
(AV)
T
), @ TJ max.
, TJ = 25°C., tp = 400µs square
T(AV)
x I
T(TO)
= 50A tp = 300µs di/dt =10A/µs
TM
= 50A, tp = 300µs,
TM
+ r
T(AV)
= 25°C
J
, I
DRM
TM
= 100V; linear to 80%V
r
max.
), @ TJ max.
), @ TJ max.
x (I
T(RMS)
f
= 50 A
)
DRM
2
2
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Page 3
Bulletin I27105 rev. B 02/02
Blocking
Parameter T50RIA T70RIA T90RIA Units Conditions
Maximum peak reverse and 15 mA TJ = TJ = TJ max.
I
RRM
off-state leakage current
I
DRM
V
RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted,
INS
dv/
Critical rate of rise of off-state 500 V/µs TJ = TJ max., linear to 80% rated V
dt
voltage
(1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90
TJ = 25°C, t = 1s
Triggering
Parameter T50RIA T70RIA T90RIA Units Conditions
P
Max. peak gate power 10 12 12 W tp ≤ 5ms, T
GM
P
Max. average gate power 2.5 3. 0 3.0 W f=50Hz, TJ = TJ max.
G(AV)
Max. peak gate current 2.5 3.0 3.0 A tp ≤ 5ms, T
I
GM
Max. peak negative 10 10 10 V
-V
GT
gate voltage
V
Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 6V, resistive
GT
voltage to trigger 2.5 2.5 2.5 T
1.5 1.5 1.5 T
Max. required DC gate 250 270 270 TJ = - 40°C Anode supply = 6V, resistive
I
GT
current to trigger 100 12 0 120 mA T
50 60 60 T
V
Max. gate voltage 0. 2 0.2 0.2 V @ TJ = TJ max., rated V
GD
that will not trigger
I
Max. gate current 5.0 6.0 6.0 mA
GD
that will not trigger
di/
Max. rate of rise of 200 A/µs VD = 0.67 rated V
dt
turned-on current 180 I
g
160 T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs
150 For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6
= TJ max.
J
= TJ max.
J
= 25°C load; Ra = 1Ω
J
= TJ max.
J
= 25°C load; Ra = 1Ω
J
= TJ max.
J
, ITM = 2 x rated di/dt
= 400mA for T50RIA and Ig = 500mA for
DRM
T..RIA Series
DRM
applied
DRM
(1)
Thermal and Mechanical Specifications
Parameter T50RIA T70RIA T90RIA Units Conditions
TJMax. junction operating -40 to 125 °C
temperature range
T
Max. storage temperature -40 to 150 °C
stg
range
R
Max. thermal resistance, 0.65 0.50 0.38 K/W DC operation, per junction
thJC
junction to case
R
Max. thermal resistance, 0.2 K/W Mounting surface smooth, flat and greased
thCS
case to heatsink
T Mounting to heatsink 1.3 ± 10% Nm M3.5 mounting screws (2)
torque ± 10% terminals 3 ± 10% M5 screw terminals
wt Approximate weight 54 g See outline table
Case style D-56 T type
(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the
spread of the compound.
non lubricated
threads
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3
Page 4
T..RIA Series
Bulletin I27105 rev. B 02/02
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
o
180o120
o
90
T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 K/W
T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24
T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20
Ordering Information Table
when devices operate at different conduction angles than DC)
thJC
o
60
o
30
180
o
120
o
o
90
o
60
o
30
Outline Table
Device Code
T 50 RIA 120
2
1
4
3
1 - Module type
2 - Current rating
3 - Circuit configuration **
4 - Voltage code : code x 10 = V
Circuit configuration **
G
RRM
+
-
All dimensions in millimeters (inches)
4
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Page 5
T..RIA Series
Bulletin I27105 rev. B 02/02
130
120
T 50R IA.. S eries
R (DC) = 0.65 K/W
thJ C
110
100
Conduction Angle
90
80
70
60
Maxi mum Allowable Cas e T emperature ( C)
50
0 102030405060
30
60
90
120
180
Average On-s tate Current (A)
Fig. 1 - Current Ratings Characteristics
80
180
70
120
60
50
40
90
60
30
RMS Limit
30
20
10
Maximum Average On-s tate Power L os s (W)
0
0 1020304050
Conduction Angle
T 50R IA.. S eries
T = 125 C
J
Aver age On-s tate Cur r ent (A)
Fig. 3 - On-state Power Loss Characteristics
130
120
T 50R IA.. S eries
R (DC) = 0.65 K /W
thJ C
110
100
Conducti on P eri od
90
80
70
60
Max imum Al lowable Cas e T emperatur e ( C)
50
0 1020304050607080
30
60
90
120
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
0
.
5
0
.
7
K
K
/
W
1
K
/
W
1
.
5
K
/
W
2
K
/
W
3
K
/
W
5
K
/
W
1
0
K
/
W
R
0
.
3
t
h
K
S
/
W
/
A
W
=
0
.
1
K
/
W
-
D
e
l
t
a
R
0 20406080100120
Max i mum All owable Ambient T emper atur e ( C)
180
DC
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110
90
80
70
DC
180
120
90
60
30
100
60
50
RMS Limit
40
30
20
10
Max im um Aver age On -s tate P ower L oss (W)
0
0 1020304050607080
Conduction P eriod
T 50R IA.. S eries
T = 125 C
J
Average On-s tate Current (A)
Fig. 4 - On-state Power Loss Characteristics
R
0
t
.
h
3
S
K
A
/
W
0
.
5
K
0
.
7
K
1
K
/
W
1
.
5
K
2
K
/
3
K
/
5
K
/
=
0.
/
W
/
W
/
W
W
W
W
1
K
/
W
-
D
el
t
a
R
020406080100120
Max imum All owable Ambient T emperature ( C)
5
Page 6
T..RIA Series
Bulletin I27105 rev. B 02/02
1200
1100
1000
900
At Any Rated L oad Condition And With
R ated V Applied Following Surge.
RRM
Initial T = 125 C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1300
Max imum Non R epeti tive S urge Cur r ent
1200
1100
1000
Versus P ulse T rain Duration. Control
Of Con duction May Not B e Maintained.
No Voltage R eapplied
R ated V R eapplied
Initial T = 125 C
RRM
900
800
700
600
T50RIA.. Series
Peak Half S ine Wave On-state Current (A)
500
110100
Nu mber Of E qual Ampli tu de Half Cy cle Curren t P uls es (N)
800
700
T 50R IA.. S eries
600
P eak H alf S ine W ave O n-s tate Current (A)
500
0.01 0.1 1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
1000
100
T = 25 C
J
10
T = 125 C
J
J
Ins tantaneous On-s tate Current (A)
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Ins tantaneous On-s tate Vol tage (V )
T 50R IA.. S eries
Fig. 10 - On-state Voltage Drop Characteristics
100
R ectangular gate puls e
a) R ecommended load line for
rated di/dt : 20V, 30ohms ;
tr=0.5 s , tp>=6 s
b) R ecommended load line for
<=30 % rated di/dt : 20V, 65ohms
10
tr=1 s , tp>=6 s
1
In s tantaneous Gate Vol tage (V)
VGD
0.1
0.001 0.01 0.1 1 10 100 1000
IGD
(b)
Tj=25 C
Tj=125 C
Ins tantaneous Gate Cur rent (A)
(a)
Tj=-40 C
T 50R IA.. S eries F requency L imited by PG(AV)
(1) P GM = 10W, tp = 5ms
(2) P GM = 20W, tp = 2ms
(3) P GM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500 s
(3)
(4)
(1)
(2)
Fig. 9 - Gate Characteristics
6
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Page 7
T..RIA Series
Bulletin I27105 rev. B 02/02
130
120
T 70R IA.. S eries
R (DC) = 0.50 K/W
thJ C
110
100
Conduction Angle
90
80
70
60
Maximum Allowable Case T emperature ( C)
50
0 1020304050607080
30
60
90
120
Average On-s tate Cur rent (A)
180
130
120
T 70R IA.. S eries
R (DC) = 0.50 K/W
thJ C
110
100
90
80
70
60
Maximum Allowable Cas e T emperature ( C)
50
0 20406080100120
306090
120
Average On-s tate Cu rrent (A)
Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics
100
90
80
70
60
180
120
90
60
30
RMS Limit
50
40
30
20
10
Maximum Average On-s tate P ower L os s (W)
0
0 10203040506070
Conduction Angle
T 70R IA.. S eries
T = 125 C
J
Average On-s tate Current (A)
5
7
0 20406080100120
Maximum Allowable Ambient T emperature ( C)
0
R
.
3
K
t
0
.
5
K
0
/
.
7
K
/
W
1
K
/
W
1
.
5
K
/
W
2
K
/
W
3
K
/
W
K
/
W
K
/
W
h
/
W
S
A
W
=
0
.
1
K
/
W
-
D
e
l
t
a
R
Fig. 18 - On-state Power Loss Characteristics
Conduction P eriod
180
DC
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140
DC
180
120
120
90
100
60
30
80
RMS Limit
60
40
20
Maximum Average On-s tate P ower L oss (W)
0
0 20406080100120
Conducti on P er iod
T 70R IA.. S eries
T = 125 C
J
Aver age On-s tate Cur r ent (A)
Fig. 15 - On-state Power Loss Characteristics
R
t
h
S
0
A
.
=
3
K
0
.
/
W
1
0
.
5
K
/
W
0
.
7
K
/
W
1
K
/
W
1
.
5
K
/
W
2
K
/
W
3
K
/
W
5
K
/
W
K
/
W
-
D
e
l
t
a
R
020406080100120
Max imum Allowable Ambient T emperature ( C)
7
Page 8
T..RIA Series
Bulletin I27105 rev. B 02/02
1500
1400
1300
At Any Rated Load Condition And With
R ated V Applied F ollowing S urge.
RRM
Initial T = 125 C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1200
1100
1000
900
T 70R IA.. S eries
800
Peak Half S ine Wave On-s tate Current (A)
700
110100
Nu mber Of E qual Ampli tude H al f Cycle Cur rent P uls es (N )
Fig. 16 - Maximum Non-Repetitive Surge Current
1000
100
T = 25 C
10
J
T = 125 C
J
1700
Max imum Non R epeti tive S u rge Cur rent
1600
1500
1400
1300
Versus P ulse Train Duration. Control
Of Conduction May Not B e Maintain ed.
Initial T = 125 C
No Voltage R eapplied
R ated V R eapplied
J
RRM
1200
1100
1000
900
800
T 70R IA.. S eries
700
P eak H alf S ine Wave On-s tate Curr en t (A)
600
0.01 0.1 1
Pulse Train Duration (s)
Fig. 17 - Maximum Non-Repetitive Surge Current
Ins tantaneous On-s tate Cur r ent (A)
1
0 0.5 1 1.5 2 2.5 3 3.5 4
Ins tantaneous On- s tate Voltage (V)
T70RIA.. Series
Fig. 10 - On-state Voltage Drop Characteristics
100
R ectangular gate pulse
a) R ecommended load line for
rated di/dt : 20V, 20ohms;
tr=0.5 s , tp>=6 s
b) R ecommen ded load line for
<=30 % rated di/dt : 15V, 40ohms
10
tr=1 s , tp>=6 s
1
Ins tantaneous Gate Voltage (V)
VGD
0.1
0.001 0.01 0.1 1 10 100 1000
IGD
(b)
Tj=125 C
T 70R IA.., T 90R IA.. S eries F requency L imited by PG(AV)
Instantaneous Gate Current (A)
Tj=25 C
Tj=-40 C
(a)
(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300 s
(1)
(2)
(3) (4)
Fig. 19 - Gate Characteristics
8
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Page 9
T..RIA Series
Bulletin I27105 rev. B 02/02
130
120
T 90R IA.. S eries
R (DC) = 0.38 K/W
thJ C
110
100
Conduction Angle
90
80
70
60
Max i mu m Allowabl e Cas e T emper atur e ( C)
50
0 20406080100
30
60
90
120
Average On-s tate Current (A)
180
130
120
T 90R IA.. S eries
R (DC) = 0.38 K/W
thJ C
110
100
90
80
70
60
Maxi mum All owable Cas e T emperatur e ( C)
50
0 20406080100120140160
30
60
90
120
Average On-s tate Cu rr ent (A)
Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics
140
120
100
80
180
120
90
60
30
RMS Limit
60
40
20
Maximu m Aver age On-s tate P ower L os s (W)
0
0 102030405060708090
Conduction Angle
T90RIA Series
T = 125 C
J
Average On- s tate Cur rent (A)
0
.
5
0
.
7
1
K
1
.
5
2
K
3
K
0 20406080100120
Maxi mum Allowable Ambient T emperature ( C)
R
t
h
0
K
/
K/
W
/
W
K
/
W
/
W
/
W
S
.
W
3
A
K
=
/
W
0
.
1
K
/
W
D
e
l
t
a
R
Fig. 29 - On-state Power Loss Characteristics
Conduction Period
180
DC
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180
DC
160
180
120
140
90
60
120
30
100
80
RMS Limit
60
40
20
Maximum Aver age On-s tate P ower L oss (W)
0
0 20406080100120140160
Conduction P eri od
T 90R IA.. S eries
T = 125 C
J
Average On-s tate Current (A)
Fig. 29 - On-state Power Loss Characteristics
R
t
h
S
=
A
0.
1
0
0
.
0
.
7
1
1
.
5
2
K/
.
3
5
K
K
/
K
/
W
K
/
K
/
W
W
K
/
W
W
W
/
-
W
D
el
ta
R
0 20406080100120
Maximum All owable Ambien t T emperatur e ( C)
9
Page 10
T..RIA Series
Bulletin I27105 rev. B 02/02
1600
1500
1400
1300
At Any R ated Load Condition And With
R ated V Applied Following Surge.
RRM
Initial T = 125 C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1200
1100
1000
900
T 90R IA.. S eries
800
Peak Half S ine Wave On-s tate Current (A)
700
110100
Nu mber Of E qual Amplitude H al f Cy cle Curren t P uls es (N)
Fig. 27 - Maximum Non-Repetitive Surge Current
1000
100
10
T = 25 C
J
T = 125 C
J
1800
Maximum Non R epetitive S urge Curr ent
1700
1600
1500
1400
Versus P uls e T rain Duration. Control
Of Con duction May N ot B e Main tained.
Initial T = 125 C
No V oltage R eappl ied
R ated V R eapplied
J
RRM
1300
1200
1100
1000
900
T 90R IA.. S eries
800
P eak H alf S ine Wave On-s tate Cur rent (A)
700
0.01 0.1 1
Pulse Train Duration (s)
Fig. 28 - Maximum Non-Repetitive Surge Current
10
Ins tantaneous On-s tate Current (A)
1
0 0.5 1 1.5 2 2.5 3 3.5
T 90R IA.. S eries
Ins tantaneous On-s tate Voltage (V)
Fig. 21 - On-state Voltage Drop Characteristics
1
Steady State Value
R = 0.65 K /W
thJ C
R = 0.50 K /W
thJ C
T ransient T hermal Impedance Z (K /W )
thJ C
R = 0.38 K /W
thJ C
(DC Operation )
0.1
0.01
0.001 0.01 0.1 1 10 10 0
S quare Wave Pulse Duration (s )
Fig. 34 - Thermal Impedance Z
Characteristics
thJC
T 50R IA.. S eries
T 70R IA.. S eries
T 90R IA.. S eries
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T..RIA Series
Bulletin I27105 rev. B 02/02
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 02/02
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