Datasheet T835H, T850H Datasheet (ST)

T835H, T850H

High temperature 8 A Snubberless™ Triacs

Features

■ Medium current Triac

■ 150 °C max. T

■ Low thermal resistance with clip bonding

■ Very high 3 quadrant commutation capability

■ Packages are RoHS (2002/95/EC) compliant

■ UL certified (ref. file E81734)

turn-off commutation

j

Applications

Especially designed to operate in high power
density or universal motor applications such as
vacuum cleaner and washing machine drum
motor, these 8 A Triacs provide a very high
switching capability up to junction temperatures of
150 °C.

The heatsink can be reduced, compared to
traditional Triac, according to the high
performance at given junction temperatures.

Description

Available in through-hole or surface mount
packages, the T835H and T850H Triacs series
are suitable for general purpose mains power ac
switching.

By using an internal ceramic pad, the T8xxH-6I
provides voltage insulation (rated at 2500 V rms).

A2

G

A2

G

A2

A1

A2

A1

D2PAK

T8xxH-6G

A2

A1

TO-220AB Insulated

T8xxH-6I

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

8A

600 V

35 or 50 mA

A1

TO-220AB

T8xxH-6T

G

G

A2

TM: Snubberless is a trademark of STMicroelectronics

September 2011 Doc ID 13564 Rev 2 1/10

www.st.com

10

Characteristics T835H, T850H

1 Characteristics

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

2

D

I

T(RMS)

I

TSM

²

tI

I

dI/dt

V

DSM/VRSM

I

GM

P

G(AV)

T

stg

T

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

On-state rms current (full sine wave)

Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)

²

t Value for fusing tp = 10 ms 42 A²s

Critical rate of rise of on-state current I
= 2 x IGT, tr ≤ 100 ns

Non repetitive surge peak off-state
voltage

Peak gate current tp = 20 µs Tj = 150 °C 4 A

Average gate power dissipation Tj = 150 °C 1 W

Storage junction temperature range
Operating junction temperature range

j

PAK, TO-220AB Tc = 136 °C

TO-220AB Ins T

= 123 °C

c

F = 50 Hz t = 20 ms 80

F = 60 Hz t = 16.7 ms 84

G

F = 120 Hz T

= 10 ms Tj = 25 °C

t

p

= 150 °C 50 A/µs

j

8A

V

DRM/VRRM

+ 100

- 40 to + 150

- 40 to + 150

Value

Symbol Test conditions Quadrant

T835H T850H

(1)

I

GT

V

GT

V

GD

(2)

I

H

I

L

dV/dt

(dI/dt)c

1. minimum IGT is guaranted at 20% of IGT max.

2. for both polarities of A2 referenced to A1.

VD = 12 V, RL = 33 Ω

VD = V

, RL = 3.3 kΩ I - II - III MIN. 0.15 V

DRM

IT = 500 mA MAX. 35 75 mA

IG = 1.2 I

(2)

VD = 67% V

(2)

Without snubber, Tj = 150 °C MIN. 11 14 A/ms

GT

gate open, Tj = 150 °C MIN. 1000 1500 V/µs

DRM,

I - II - III MAX. 35 50 mA

I - II - III MAX. 1.0 V

I - III

50 60

MAX.

II 80 110

A

V

°C

Unit

mA

2/10 Doc ID 13564 Rev 2

T835H, T850H Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit

(1)

V

T

V

t0

R

d

ITM = 11 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V

(1)

Threshold voltage Tj = 150 °C MAX. 0.80 V

(1)

Dynamic resistance Tj = 150 °C MAX. 25 mΩ

Tj = 25 °C MAX. 5 µA

V

= V

V

DRM

D/VR

D/VR

I

DRM

(2)

I

RRM

1. for both polarities of A2 referenced to A1

= 380 µs

2. t

p

Table 5. Thermal resistance

RRM

T

= 150 °C MAX. 3.1

j

= 400 V (at peak mains voltage) Tj = 150 °C MAX. 2.5

= 200 V (at peak mains voltage) Tj = 150 °C MAX. 2.0

Symbol Parameter Value Unit

D2PAK / TO-220AB 1.85

R

R

th(j-c)

th(j-a)

Junction to case (AC)

Junction to ambient

S = 1 cm

TO-220AB Ins 3.7

2

D2PA K 4 5

TO-220AB / TO-220AB Ins 60

mAV

°C/W

Doc ID 13564 Rev 2 3/10

Characteristics T835H, T850H

Figure 1. Maximum power dissipation versus

on-state rms current (full cycle)

P(W)

10

α=180 °

9

8

7

6

5

4

3

2

1

0

012345678

I

T(RMS)

(A)

180°

Figure 3. On-state rms current versus

ambient temperature

I

(A)

T(RMS)

4.5

4.0

3.5

Epoxy printed circuit board FR4,

copper thickness = 35 µm

α=180 °

D²PAK

S

CU

=1 cm²

3.0

2.5

2.0

1.5

1.0

0.5

0.0

T

(°C)

amb

0 25 50 75 100 125 150

Figure 5. On-state characteristics

(maximum values)

ITM(A)

100

Tj=150 °C

10

Tj=25 °C

Tjmax. :

V

= 0.80 V

t0

R

= 52 mΩ

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VTM(V)

d

Figure 2. On-state rms current versus case

temperature (full cycle)

I

(A)

T(RMS)

9

8

7

TO-220AB

TO-220AB/D²PAK

Insulated

6

5

4

3

2

1

α=180 °

TC(°C)

0

0 25 50 75 100 125 150

Figure 4. Variation of thermal impedance

versus pulse duration

Zth(°C/W)

1.0E+02

Z

th(j-a)

1.0E+01

Z

th(j-c)

1.0E+00

1.0E-01

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

tP(s)

Figure 6. Surge peak on-state current versus

number of cycles

I

(A)

TSM

90

80

70

60

Non repetitive

initial=25 °C

T

j

50

40

30

Repetitive
T

=125 °C

c

20

10

0

Number of cycles

1 10 100 1000

t=20ms

One cycle

4/10 Doc ID 13564 Rev 2

T835H, T850H Characteristics

Figure 7. Non-repetitive surge peak on-state

current for a sinusoidal pulse with

Figure 8. Relative variation of IGT,IH, IL vs

junction temperature
(typical values)

I

(A), I²t (A²s)

TSM

10000

dI/dt limitation: 50 A/µs

1000

100

width t < 10 ms and corresponding value of I t

10

0.01 0.10 1.00 10.00

p

2

Tj initial=25 °C

I

TSM

I²t

tP(ms)

Figure 9. Relative variation of critical rate of

decrease of main current (dI/dt)c
versus reapplied (dV/dt)c

(dI/dt)c[(dV/dt)c] / Specified (dI /dt)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1.0 10.0 100.0

c

typical values

(dV/dt)C(V/µs)

Figure 11. Leakage current versus junction

temperature for different values of
blocking voltage (typical values)

I

(µA)

DRM/IRRM

1.0E+04

V

=600 VV

1.0E+03

V

=400 VV

1.0E+02

V

=200 VV

=200 V

DRM=VRRM

1.0E+01

1.0E+00

1.0E-01

1.0E-02

DRM=VRRM

25 50 75 100 125 150

DRM=VRRM

DRM=VRRM

=400 V

Tj(°C)

DRM=VRRM

DRM=VRRM

=600 V

IGT,IH,IL[Tj]/IGT,IH,IL[Tj=25°C]

2.5

2.0

1.5

1.0

0.5

0.0

I

GT

IH& I

L

Tj(°C)

-40 -20 0 20 40 60 80 100 120 140 160

Figure 10. Relative variation of critical rate of

decrease of main current versus
junction temperature

(dI/dt)c[Tj] / (dI/dt)c[Tj=150°C]

8

7

6

5

4

3

2

1

0

25 50 75 100 125 150

Tj(°C)

Figure 12. Variation of thermal resistance

junction to ambient versus copper
surface under tab

R

(°C/W)

th(j-a)

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

Epoxy printed circuit board FR4,

copper thickness = 35 µm

SCU(cm²)

D²PAK

Doc ID 13564 Rev 2 5/10

Ordering information scheme T835H, T850H

2 Ordering information scheme

Figure 13. Ordering information scheme

T 8 xx H - 6 y -TR

Triac series
Current

8 = 8 A

Sensitivity

35 = 35 mA
50 = 50 mA

High temperature
Voltage

6 = 600 V

Package

G = D2PA K
T = TO-220AB
I = TO-220AB Ins

Packing

Blank = Tube (D2PAK, TO-220AB)

-TR = Tape and reel (D2PAK)

6/10 Doc ID 13564 Rev 2

T835H, T850H Package information

D

3 Package information

● Epoxy meets UL94, V0

● Recommended torque 0.4 to 0.6 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. D

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

2

PAK dimensions

.

Dimensions

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.30 4.60 0.169 0.181

A

L2

E

C2

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

L

L3

G

A1

B2

B

C

R

B2 1.25 1.40 0.048 0.055

C 0.45 0.60 0.017 0.024

C2 1.21 1.36 0.047 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.28 0.393 0.405

2mm min.
FLAT ZONE

A2

V2

Figure 14. Footprint (dimensions in mm)

16.90

10.30

Doc ID 13564 Rev 2 7/10

8.90

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

R 0.40 0.016

V2 0° 8° 0° 8°

5.08

1.30

3.70

Package information T835H, T850H

Table 7. TO-220AB and TO-220AB Ins dimensions

Dimensions

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

B

Ø I

C

b2

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409

L

A

I4

l3

a1

l2

b1

e

a2

F

b1 0.61 0.88 0.024 0.034

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

c2

c1 0.49 0.70 0.019 0.027

c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

M

F 6.20 6.60 0.244 0.259

c1

ØI 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066

l3 1.14 1.70 0.044 0.066

M2.60 0.102

8/10 Doc ID 13564 Rev 2

T835H, T850H Ordering information

4 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode

T8xxH-6G T8xxH 6G D

T8xxH-6G-TR T8xxH 6G D

2

PAK 1.5 g 50 Tube

2

PAK 1.5 g 1000 Tape and reel

T8xxH-6T T8xxH 6T TO-220AB 2.3 g 50 Tube

T8xxH-6I T8xxH 6I TO-220AB Ins 2.3 g 50 Tube

5 Revision history

Table 9. Document revision history

Date Revision Changes

17-Apr-2007 1 First issue.

19-Sep-2011 2 Udated: Features, Description, Figure 2, Ta b l e 2 and 4.

Doc ID 13564 Rev 2 9/10

T835H, T850H

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10/10 Doc ID 13564 Rev 2