Page 1
T835-600G
®
FEATURES
HIGH COMMUTATION PREFORMANCES
TM
SNUBBERLESS
TECHNOLOGY
HIGH NOISE IMMUNITY (dV/dt)
HIGH I
TSM
DESCRIPTION
The T835-600G and T850-600G triacs are using
high performance SNUBBERLESS technology.
They are intended for AC control applications
using surface mount tecnology.
These devices are perfectly suited where high
commutation and surge performances are
required.
T850-600G
HIGH PERFORMANCE TRIAC
A2
G
A2
A1
2
D
PAK
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
DRM
V
RRM
I
T(RMS)
Repetitive peak off-state voltage Tj = 125°C 600 V
RMS on-state current
Tc= 110°C 8 A
(360° conduction angle)
I
TSM
Non repetitive surge peak on-state current
tp = 8.3ms 85 A
(Tj initial = 25°C)
tp = 10 ms 80
2
I
t
dI/dt Critical rate of rise of on- state current
2
I
t Value for fusing
tp = 10 ms 32 A
Repetitive
20 A/µs
F = 50 Hz
I
= 500 mA dIG /dt = 1 A/µs.
G
Non Repetitive 100
T
stg
T
j
Storage temperature range
Operating junction temperature range
- 40, + 150
- 40, + 125
T Maximum temperature for soldering during 10s 260
2
s
°
C
°
C
May 1998 - Ed: 3A
1/5
Page 2
T835-600G / T850-600G
THERMAL RE SISTA NC ES
Symbol Parameter Value Unit
2
Rth(j-a) Junction to ambient (S = 1 cm
) 45 °C/W
Rth(j-c) Junction to case for DC 2.1
Rth(j-c)
GATE CHARACTERISTICS
P
= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
G (AV)
Junction to case for AC 360° conduction angle (F=50Hz)
(maximum values)
1.6
ELECTRICAL CHARACT E RISTICS
Symbol Test Conditions Quadrant T835 T850 Unit
I
GT
VD=12V (DC) RL=33
Ω
Tj= 25°C I-II-III MIN 2 mA
MAX 35 5 0
V
GT
V
GD
*I
I
H
I
L
VD=12V (DC) RL=33
VD=V
IG = 1.2 I
RL=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V
DRM
= 100mA Gate open Tj= 25°C MAX 35 50 mA
T
GT
Ω
Tj= 25°CI-II-IIIMAX 1.3 V
Tj = 2 5°C I-III MAX 50 60 mA
II MAX 80 100
V
TM *
ITM= 11A t p= 380µs Tj= 25°CMAX1.5V
°
C/W
°
C/W
I
DRM
I
RRM
VD = V
VR = V
DRM
RRM
dV/dt * Linear slope up to VD=67%V
DRM
Tj= 25°CMAX5
Tj= 125°C MAX 2 mA
Tj= 125°C MIN 500 1000 V/µs
Gate open
(dI/dt)c *
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION
Without snubber
Tj= 125°C MIN 4.5 7 A/ms
Add "-TR" suffix for Tape & Reel shipment
T 8 35 - 600 G
TRIAC
CURRENT
SENSITIVITY
PACKAGE :
2
G = D
VOLTAG E
PAK
µ
A
2/5
Page 3
T835-600G / T850-600G
Fig. 1:
Maximum power dissipation versus RMS
on-state current.
Fig. 2:
pation and maximum allowable temperatures
(T
heatsink+contact.
P(W)
12
10
8
6
a
=60°
α
α
=90°
=120°
α
=180°
4
α
=30°
2
I (A)
0
012345678
Fig. 3:
RMS on-state current versus case tem-
T(RMS)
perature.
I (A)
T(RMS)
10
α
8
=180°
P(W) Tcase (°C)
12
10
8
6
4
2
0
Fig. 4 :
versus pulse duration.
K=[Zth/Rth]
1.00
Correlation between maximum power dissi-
amb
and T
) for different thermal resistances
case
Rth=8°C/W
α
=180°
Rth=2°C/WRth=5°C/W
Tamb(°C)
0 20 40 60 80 100 120 140
Rth=0°C/W
Relative variation of thermal impedance
Zth(j-c)
110
115
120
125
6
4
2
Tcase(°C)
0
0 25 50 75 100 125
Fig. 5:
Relative variation of gate trigger current and
holding current versus junction temperature (typical values).
I ,I [Tj]/I ,I [Tj=25°C]
GT H GT H
2.5
I
2.0
1.5
1.0
0.5
0.0
GT
I
H
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140
Zth(j-a)
0.10
tp(s)
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6:
Non repetitive surge peak on-stat e current
versus number of cycles.
TSM
(A)
I
80
70
60
50
40
30
20
10
0
1 10 100 1000
Number of cycles
Tj initial=25°C
F=50Hz
3/5
Page 4
T835-600G / T850-600G
Fig. 7:
for a sinusoidal pulse with width tp<10ms, and corresponding value of I
300
100
Fig. 9:
Non repetitive surge peak on-state current
2
t.
ITSM(A),I²t(A²s)
ITSM
I²t
10
12 510
tp(ms)
Tj initial=25°C
Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0 4 8 1216202428323640
S(Cu) (cm²)
Fig. 8:
On-state characteristics (maximum values).
I (A)
TM
100
Tj max.:
Vto=0.83V
Rt=56 m
Ω
Tj=Tj max.
10
Tj=25°C
V (V)
TM
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 10:
Typical reflow soldering heat profile, either
for mounting on FR4 or metal-backed boards.
T (°C)
250
200
150
100
50
0
0 40 80 120 160 200 240 280 320 360
Epoxy FR4
board
Metal-backed
245°C
215°C
board
t (s)
4/5
Page 5
PACKAGE MECHANICAL DAT A
2
D
PAK
E
L2
L
L3
A1
B2
B
G
2.0 MIN.
FLAT ZONE
C2
T835-600G / T850-600G
DIMENSIONS
REF.
A
A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
D
B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.048 0.055
C 0.45 0.60 0.017 0.024
C2 1.21 1.36 0.047 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G 4.88 5.28 0.192 0.208
A2
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
V2
R 0.40 0.016
V2 0° 8° 0° 8°
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
FOOT PRINT DIMENSIONS
16.90
(in millimeters)
MARKING
TYPE MARKING
T835-600G T835
600G
10.30
8.90
3.70
5.08
1.30
PACKING
Tube : 50 units
T850-600G T850
600G
Tape and reel : 500 unit s
Information fur nished is be lieved to be accurate and relia ble. Howev er, STMicr oelectr onics assume s no respons ibility for th e consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise u nder any patent or patent right s of STMicroel ectronics. S pecification mentione d in this publi cation are s ubject to
change without notice. Th is publication superse des and replaces all information prev iously supplied. STMicroelec tronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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