Datasheet T75 Series Specification

T75-750

Outline type code: JEDEC TO-200AB

(E-puk)

See package details for further information

Phase Control Thyristor

KKT75750, July 2005 version

Thyristors type T75 are of modern design with pressure contacts, high alumina ceramic insulator and cold-welding
encapsulation. Designed for use in power electronic circuits and equipment under normal operating conditions.

KEY PARAMETERS

U

, U

DRM

I

750 A

T(AV)

I

9500 A

TSM

du/dt* 1000 V/s
di/dt 150 A/s

* maximum (non standard) value

FEATURES

all diffused design

high current capabilities
high surge current capabilities
high rates voltages
high du/dt
low gate current
dynamic gate
low thermal impedance
tested according to IEC standards
compact size and small weight

APPLICATION

High Power Drives
DC Motor Control
High Voltage Power Supplies

Designed for use in high power industrial and commercial electronic circuits and equipment where high
currents are encoutered and high reliability is essential.

up to 1600 V

RRM

Zakłady Elektronowe LAMINA S.A. Tel.: [phone]

Puławska 34 Tel.: [phone]
PL-05-500 Piaseczno Fax.: [phone]
POLAND e-mail: [e-mail]
www.lamina.com.pl

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T75-750

Voltage class

U

DRM

, U

RRM

U

DSM

, U

RSM

I

DRM

, I

RRM

V V mA

04

400

500

30

06

600

700

08

800

900

10

1000

1100

12

1200

1300

14

1400

1500

16

1600

1700

Group code

du/dt

V/s

0

no specified value

5

320

6

500

7

1000

voltage class (hundreds of volts)

Phase Control Thyristor

KKT75750, July 2005 version

ORDERING INFORMATION

When ordering please refer to device code builder presented below.
Please use the complete part number when ordering, quote or in any future correspondence relating to your
order.

T75-750-

This is standard device, with no dynamic parameters specified and standard accessory set.
Please refer to Electrical Parameters if specific dynamic demands have to be met.
Those information, as well as any other concerning non-standard accessories e.g. custom leads lenght or lead
terminal connector type should be included in the order.

ELECTRICAL PARAMETERS

Voltage ratings

du/dt group codes

Zakłady Elektronowe LAMINA S.A. Tel.: [phone]

Puławska 34 Tel.: [phone]
PL-05-500 Piaseczno Fax.: [phone]
POLAND e-mail: [e-mail]
www.lamina.com.pl

2/7

T75-750

Parameter

Unit

Test conditions

Value

Average on-state current

I

T(AV)

A

750

Case temperature

Tc °C

65

RMS on-state current

I

T(RMS)

A

1180

Surge on-state current

I

TSM

A

T

j

=125°C, U

R

=0,8U

RRM

,

tp=10ms

9500

I2t – value

I2t

kA2s

450

On-state voltage max.

U

TM

V

T

j

=25°C, I

TM

=1500A

1,70

Treshold voltage

U

T(T0)

V

0,89

Slope resistance

rT mΩ

0,48

Latching current

Il

mA

T

j

=25°C, U

D

=12V

800

Holding current

IH mA

T

j

=25°C, U

D

=12V

200

Circuit commutated turn-off
time (typical)

tq (typ)

s

T

j

=125°C, I

TM

=250A,

diR/dt=25A/s, du/dt=20V/s,

UD=0,67U

DRM

, URM=100V

150

Turn-0n time (typical)

ton

s

ITM=100A, UDM=100V

7

Rate of rise of on-state current­repetitive

di/dt

A/s

T

j

=125°C, I

TM

=3I

T(AV)

,

UD=0,67U

DRM

, f=50Hz, IGM=1A,

diG/dt=1A/s

150

Critical rate of raise of off-state
voltage

du/dt

V/s

T

j

=125°C, U

D

=0,67U

DRM

,

320 - 1000

Gate current to trigger

I

GT

mA

T

j

=25°C, U

D

=12V

150

Gate voltage to trigger

UGT V T

j

=25°C, U

D

=12V

3

Parameter

Unit

Test conditions

Value

Thermal resistance, junction to
case

R

thJC

°C/W

two sided, DC

0,04

Thermal resistance, case to
heatsink

R

thCS

°C/W

two sided

0,020

Operating junction temperature

T

jmin

...T

jmax

°C

-40...+125

Storage temperature

T

stg

°C

-40...+125

Parameter

Unit

Value

Clamping force

F

kN

9,0 ... 11,0

Weight m g

85

Phase Control Thyristor

KKT75750, July 2005 version

Electrical properties

Termal properties

Mechanical properties

Zakłady Elektronowe LAMINA S.A. Tel.: [phone]

Puławska 34 Tel.: [phone]
PL-05-500 Piaseczno Fax.: [phone]
POLAND e-mail: [e-mail]
www.lamina.com.pl

3/7

T75-750

Phase Control Thyristor

KKT75750, July 2005 version

Package details

For further package information, please contact Sales & Marketing Department. All dimensions in mm, unless
stated otherwise.
Do not scale.

Zakłady Elektronowe LAMINA S.A. Tel.: [phone]
Puławska 34 Tel.: [phone]
PL-05-500 Piaseczno Fax.: [phone]
POLAND e-mail: [e-mail]
www.lamina.com.pl

4/7

T75-750

Power loss characteristics. Sinus wave form.

I

T(AV)

, [A]

0 100 200 300 400 500 600 700 800

P

T(AV)

, [W]

0

200

400

600

800

1000

1200

1400

Q

30

o

60

o

90

o

120

o

180

o

Power loss characteristics. Square wave form.

I

T(AV)

, [A]

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

P

T(AV)

, [W]

0

200

400

600

800

1000

1200

1400

1600

1800

Q

30

o

60

o

90

o

120

o

180

o

DC

Case temperature ratings. Sinus wave form.

I

F(AV)

, [A]

0 100 200 300 400 500 600 700 800

TC, [oC]

50

60

70

80

90

100

110

120

130

Q

30

o

60

o

90o120

o

180

o

Case temperature ratings. Square wave form.

I

F(AV)

, [A]

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

TC, [oC]

50

60

70

80

90

100

110

120

130

Q

30

o

60

o

90

o

120

o

180

o

DC

Phase Control Thyristor

KKT75750, July 2005 version

CHARACTERISTICS

Zakłady Elektronowe LAMINA S.A. Tel.: [phone]

Puławska 34 Tel.: [phone]
PL-05-500 Piaseczno Fax.: [phone]
POLAND e-mail: [e-mail]
www.lamina.com.pl

5/7

T75-750

n

1 10 100

I

TSM

, [kA]

4

5

6

7

8

9

10

Tj=T

jmax

UR=0,8U

RRM

Non-repetitive surge current rating

ITM, A

100 1000 10000

UTM, V

0

1

2

3

4

5

6

Tj=T

jmax

On-state characteristic

t, s

0,001 0,01 0,1 1 10

Z

th(t)

, oC/W

0,001

0,01

0,1

Transient thermal impedance

Phase Control Thyristor

KKT75750, July 2005 version

Zakłady Elektronowe LAMINA S.A. Tel.: [phone]
Puławska 34 Tel.: [phone]
PL-05-500 Piaseczno Fax.: [phone]
POLAND e-mail: [e-mail]
www.lamina.com.pl

6/7

T75-750

Gate characteristic. Possible trigger area.

uG, V

0 1 2 3 4

iG, mA

0

75

150

225

300

375

Tj=+25oC

Tj=-40oC

Tj=+125oC

Gate characteristic.

A - possible trigger area
B - permitted gate pulse forcing area
R - recommended gate drive load line

uG, V

0 5 10 15 20

iG, A

0

1

2

3

4

I

FGM

=4A

U

FGM

=20V

PGM=16W

A

B

R

Phase Control Thyristor

KKT75750, July 2005 version

Gate characteristics

HEATSINKS

LAMINA S.I. has its own proprietary range of extruded aluminium heatsinks designed to optimise the performance
of our semiconductors with natural and forced air flow. High efficiency water cooled copper heatsinks are also
available.

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their best operation. LAMINA S.I. offers a wide selection
of clamps to suit all of our manufactured devices.

POWER ASSEMBLY CAPABILITY

LAMINA S.I. provides a support for those customers requiring more than a basic semiconductor and offers
precisely assembled Power Blocks according to factory or customer standards.

Zakłady Elektronowe LAMINA S.A. Tel.: [phone]
Puławska 34 Tel.: [phone]
PL-05-500 Piaseczno Fax.: [phone]
POLAND e-mail: [e-mail]
www.lamina.com.pl

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