Datasheet T2535-600G Datasheet (SGS Thomson Microelectronics)



FEATURES

HIGHCOMMUTATION(dI/dt)c> 13 A/ms
withoutsnubber

HIGHSTATICdV/dt > 500 V/µs

T2535-600G

HIGH PERFORMANCE TRIAC

A2

DESCRIPTION

The T2535-600G triac uses a high performance
SNUBBERLESS

TM

technology.

The part is intended for general purpose
applicationsusing surfacemounttechnology.

D

2

PAK

A1

A2

G

ABSOLUTERATINGS (limitingvalues)

Symbol Parameter Value Unit

V

DRM

V

RRM

I

T(RMS)

Repetitivepeakoff-statevoltage

RMSon-statecurrent

Tj= 125°C 600 V

Tc= 95°C25A

(360°conductionangle)

I

TSM

Non repetitivesurge peak on-statecurrent

tp = 8.3ms 262 A

(Tj initial= 25°C)

tp = 10 ms 250

2

tI

I

2

t Value(half-cycle,50 Hz) tp = 10 ms 312.5 A2s

dI/dt Criticalrate of rise ofon-statecurrent

Repetitive

F = 50 Hz

I

=500 mA dIG/dt = 1 A/µs.

G

Non Repetitive 100

T

stg

T

j

Storagetemperature range
Operatingjunctiontemperaturerange

Tl Maximumtemperaturefor solderingduring 10s 260

May 1998 - Ed:1E

20 A/µs

-40, +150

-40, +125

°C

°

C

1/5

T2535-600G

THERMALRESISTANCES

Symbol Parameter Value Unit

2

Rth(j-a) Junctionto ambiant(S=1cm
Rth(j-c) Junctionto casefor DC 1.4 °C/W

)45°C/W

Rth(j-c)

GATECHARACTERISTICS

P

=1W PGM= 10 W (tp = 20 µs) IGM=4A(tp=20µs)

G (AV)

Junctionto casefor AC 360°conductionangle(F=50Hz)

(maximumvalues)

1.0

ELECTRICALCHARACTERISTICS

Symbol Test Conditions Quadrant Sensitivity Unit

I

GT

VD=12V (DC) RL=33

Ω

Tj= 25°C I-II-III MIN 2 mA

MAX 35

V

GT

V

GD

*I

I

H

I

L

V

TM*

I

DRM

I

RRM

VD=12V (DC) RL=33Ω
VD=V

DRMRL

= 500mA Gateopen Tj= 25°C MAX 50 mA

T

IG=1.2 I

=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V

GT

Tj= 25°C I-II-III MAX 1.3 V

Tj= 25°C I-II-III MAX 80 mA
ITM= 35A tp=380µs Tj= 25°C MAX 1.5 V
VD=V
VR=V

DRM

RRM

Tj= 25°C MAX 5

Tj=125°C MAX 3 mA

°

C/W

µ

A

dV/dt* Linearslope up toV

=67%V

D

DRM

Tj= 125°C MIN 500 V/µs

Gateopen

(dI/dt)c* Withoutsnubber Tj= 125°C MIN 13 A/ms

* For either polarity of electrodeA2 voltagewith referenceto electrode A1.

ORDERINGINFORMATION

Add ”-TR” suffixfor Tape & Reelshipment

T 25 35 - 600 G

PACKAGE:

2

G=D

VOLTAGE

PAK

2/5

TRIAC

CURRENT

SENSITIVITY

T2535-600G

Fig. 1:

Maximum power dissipation versus RMS

on-statecurrent.

P(W)

35
30
25
20
15

α=120°

α=90°

α=60°

α=180°

10

α=30°

5

I (A)T(RMS)

0

0 5 10 15 20 25

Fig. 3:

RMS on-state current versus case tem-

perature.

T(RMS)

I (A)

30

25

α=180°

Fig.2: Correlationbetweenmaximumpower dissi­pation and maximum allowable temperatures
(T

amb

and T

) for different thermal resistances

case

heatsink+contact.

P(W) Tcase (°C)

35

Rth=3°C/W

30

25
20
15
10

5
0

0 20 40 60 80 100 120 140

Fig. 4:

Rth=2°C/W

α=180°

Tamb(°C)

Relative variation of thermal impedance

Rth=0°C/WRth=1°C/W

95

100

105

110

115

120

125

versuspulseduration.

K=[Zth/Rth]

1.00

Zth(j-c)

20

15

10

5

Tcase(°C)

0

0 25 50 75 100 125

Fig.5:

Relativevariationofgatetriggercurrentand
holding current versus junction temperature (typi­calvalues).

I ,I [Tj]/I ,I [Tj=25°C]GT H GT H

2.5

2.0

1.5

1.0

0.5

0.0

IGT

IH

Tj(°C)

-40 -20 0 20 40 60 80 100 120 140

Zth(j-a)

0.10

tp(s)

0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 6: Non repetitivesurge peak on-statecurrent
versusnumberof cycles.

I (A)TSM

220
200
180
160
140
120
100

80
60
40
20

0

1 10 100 1000

Number of cycles

Tj initial=25°C
F=50Hz

3/5

T2535-600G

Fig. 7: Non repetitivesurge peak on-state current

fora sinusoidalpulsewith width tp<10ms,and cor­respondingvalueof I

I

(A),I t(A s)

TSM

1000

500

200

100

12 510

Fig.9:

Thermalresistancejunctionto ambientver-

2

t.

TSM

I

I t

Tj initial=25°C

tp(ms)

suscoppersurfaceunder tab(Epoxy printed circuit
boardFR4, copperthickness:35µm).

Rth(j-a) (°C/W)

80
70
60
50
40
30
20
10

0

0 4 8 12 16 20 24 28 32 36 40

S(Cu) (cm )

Fig.8: On-statecharacteristics(maximumvalues).

TM

I (A)

200

Tj max.:
Vto=0.9V

100

Rt=16 m Ω

Tj=Tj max.

10

Tj=25°C

V (V)TM

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig.10:

Typicalreflowsolderingheatprofile,either

formountin gon FR4 or metal-backedboards.

T(°C)

250

200

150

100

50

0

0 40 80 120 160 200 240 280 320 360

Epoxy FR4

board

Metal-backed

245°C
215°C

board

t (s)

4/5

PACKAGEMECHANICAL DATA

2

D

PAK

E

L2

L

L3

A1

B2

B

G

2.0 MIN.
FLAT ZONE

C2

T2535-600G

DIMENSIONS

REF.

A

A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

D

B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.048 0.055

C 0.45 0.60 0.017 0.024

C2 1.21 1.36 0.047 0.054

C

R

D 8.95 9.35 0.352 0.368

E 10.00 10.28 0.393 0.405

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

A2

L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069

V2

R 0.40 0.016

V2 0° 8° 0° 8°

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

FOOTPRINT DIMENSIONS

16.90

(in millimeters)

MARKING

: T2535

600G

10.30

8.90

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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publicationsupersedes and replaces all information previouslysupplied.
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5.08

1.30

5/5