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1
Motorola Thyristor Device Data
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Symbol Value Unit
Repetitive Peak Off-State Voltage
(1)
(TJ = –40 to +100°C, Gate Open)
T2500 B
D
M
N
V
DRM
200
400
600
800
Volts
On-State Current RMS (TC = +80°C)
(Full Cycle Sine Wave 50 to 60 Hz)
I
T(RMS)
6 Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
I
TSM
60 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t 15 A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 1 µs)
P
GM
16 Watts
Average Gate Power
(TC = +80°C, t = 8.3 ms)
P
G(AV)
0.2 Watt
Peak Gate Trigger Current (Pulse Width = 10 µs) I
GTM
4 Amps
Operating Junction Temperature Range T
J
–40 to +100 °C
Storage Temperature Range T
stg
–40 to +150 °C
1. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Order this document
by T2500/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
T2500
Series
CASE 221A-04
(TO-220AB)
STYLE 4
TRIACs
6 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
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2 Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.7 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
Peak Blocking Current
(Rated V
DRM
, Gate Open,TJ = 100°C)
I
DRM
— — 2 mA
Maximum On-State Voltage (Either Direction)*
(IT = 30 A Peak)
V
TM
— — 2 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 12 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
I
GT
—
—
—
—
10
20
15
30
25
60
25
60
mA
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 12 Ohms)
(VD = V
DROM
, RL = 125 Ohms, TC = 100°C)
V
GT
—
0.2
1.25
—
2.5
—
Volts
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 150 mA)
I
H
— 15 30 mA
Gate Controlled Turn-On Time
(Rated V
DRM
, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs)
t
gt
— 1.6 — µs
Critical Rate-of-Rise of Commutation Voltage
(Rated V
DRM
, I
T(RMS)
= 6 A, Commutating di/dt = 3.2 A/ms,
Gate Unenergized, TC = 80°C)
dv/dt(c) — 10 — V/µs
Critical Rate-of-Rise of Off-State Voltage
(Rated V
DRM
, Exponential Voltage Rise,
Gate Open, TC = 100°C) T2500B
T2500D,M,N
dv/dt
—
—
100
75
—
—
V/µs
*Pulse Test: Pulse Width p 300 µs, Duty Cycle p 2%.
QUADRANT DEFINITIONS
QUADRANT II QUADRANT I
QUADRANT III QUADRANT IV
MT2(+)
MT2(–)
MT2(+), G(–) MT2(+), G(+)
MT2(–), G(–) MT2(–), G(+)
G(–) G(+)
ELECTRICAL CHARACTERISTICS of RECOMMENDED
BIDIRECTIONAL SWITCHES
USAGE
General
PART NUMBER MBS4991 MBS4992
V
S
6.0 – 10 V 7.5 – 9.0 V
I
S
350 µA Max 120 µA Max
VS1 – V
S2
0.5 V Max 0.2 V Max
Temperature
Coefficient
0.02%/°C Typ
See AN-526 for Theory and Characteristics of Silicon Bidirectional Switches.
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Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 221A-04
(TO–220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.055 1.15 1.39
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
A
K
L
V
G
D
N
Z
H
Q
FB
1 2 3
4
–T–
SEATING
PLANE
S
R
J
U
T
C
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4 Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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T2500/D
*T2500/D*
◊
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