Datasheet T2035-600G Datasheet (SGS Thomson Microelectronics)



FEATURES

HIGHCOMMUTATION (dI/dt)c> 11 A/ms
withoutsnubber

HIGHSTATICdV/dt > 500V/µs

T2035-600G

HIGH PERFORMANCE TRIAC

A2

DESCRIPTION

The T2035-600G triac uses a high performance
SNUBBERLESS

TM

technology.

The part is intended for general purpose
applicationsusingsurfacemounttechnology.

D

2

PAK

A1

A2

G

ABSOLUTERATINGS (limitingvalues)

Symbol Parameter Value Unit

V

DRM

V

RRM

I

T(RMS)

Repetitivepeak off-statevoltage

RMSon-statecurrent

Tj= 125°C 600 V

Tc=100°C20A

(360°conduction angle)

I

TSM

Non repetitivesurgepeak on-statecurrent

tp = 8.3ms 210 A

(Tj initial= 25°C)

tp = 10ms 200

2

tI

I

2

t Value(half-cycle,50 Hz) tp = 10ms 200 A2s

dI/dt Criticalrate of riseof on-statecurrent

Repetitive

F = 50Hz

I

=500 mA dIG/dt =1 A/µs.

G

Non Repetitive 100

T

stg

T

j

Storagetemperaturerange
Operatingjunctiontemperaturerange

Tl Maximumtemperaturefor solderingduring 10s 260

January 1998- Ed: 1D

20 A/µs

-40, +150

-40, +125

°C

°

C

1/5

T2035-600G

THERMALRESISTANCES

Symbol Parameter Value Unit

2

Rth(j-a) Junctionto ambiant(S=1cm
Rth(j-c) Junctionto casefor DC 1.5 °C/W

)45°C/W

Rth(j-c)

GATECHARACTERISTICS

P

=1W PGM= 10W (tp = 20µs) IGM=4A(tp=20µs)

G (AV)

Junctionto caseforAC 360°conductionangle(F=50Hz)

(maximumvalues)

1.1

ELECTRICALCHARACTERISTICS

Symbol Test Conditions Quadrant Sensitivity Unit

I

GT

VD=12V (DC) RL=33

Ω

Tj= 25°C I-II-III MIN 2 mA

MAX 35

V

GT

V

GD

*I

I

H

I

L

V

TM*

I

DRM

I

RRM

VD=12V (DC) RL=33Ω
VD=V

DRMRL

= 500mA Gateopen Tj= 25°C MAX 35 mA

T

IG=1.2 I

=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V

GT

Tj= 25°C I-II-III MAX 1.3 V

Tj= 25°C I-II-III MAX 80 mA
ITM= 28A tp= 380µs Tj= 25°C MAX 1.5 V
VD=V
VR=V

DRM

RRM

Tj= 25°C MAX 5

Tj=125°C MAX 2 mA

°

C/W

µ

A

dV/dt* Linearslope uptoV

=67%V

D

DRM

Tj= 125°C MIN 500 V/µs

Gateopen

(dI/dt)c* Withoutsnubber Tj= 125°C MIN 11 A/ms

* For eitherpolarity of electrode A2 voltagewith referenceto electrode A1.

ORDERINGINFORMATION

Add”-TR” suffixfor Tape &Reelshipment

T 20 35 - 600 G

PACKAGE:

2

G=D

VOLTAGE

PAK

2/5

TRIAC

CURRENT

SENSITIVITY



T2035-600G

Fig. 1:

Maximum power dissipation versus RMS

on-statecurrent.

P(W)

25

20

15

10

α=90°

α=60°

α=30°

5

α=180°

α=120°

I (A)T(RMS)

0

0 5 10 15 20

Fig. 3:

RMS on-state current versus case tem-

perature.

I (A)

T(RMS)

22
20
18
16
14
12
10

8
6
4
2
0

0 25 50 75 100 125

α=180°

Tcase(°C)

Fig.2:

Correlationbetweenmaximumpowerdissi­pation and maximum allowable temperatures
(T

amb

and T

) for different thermal resistances

case

heatsink+contact.

P(W) Tcase (°C)

25

Rth=4°C/W

20

15

10

5

0

0 20 40 60 80 100 120 140

Fig. 4:

α=180°

Tamb(°C)

Relative variation of thermal impedance

Rth=0°C/WRth=1°C/WRth=2°C/W

100

105

110

115

120

125

versuspulseduration.

K=[Zth/Rth]

1.00

Zth(j-c)

Zth(j-a)

0.10

tp(s)

0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig.5:

Relativevariationof gatetriggercurrentand
holding current versus junction temperature(typi­calvalues).

I ,I [Tj]/I ,I [Tj=25°C]GT H GT H

2.5

2.0

1.5

1.0

0.5

0.0

IGT

IH

Tj(°C)

-40 -20 0 20 40 60 80 100 120 140



Fig. 6:

Non repetitive surge peak on-statecurrent

versusnumberof cycles.

I (A)TSM

200
180
160
140
120
100

80
60
40
20

0

1 10 100 1000

Number of cycles

Tj initial=25°C
F=50Hz

3/5

T2035-600G

Fig. 7: Non repetitive surge peak on-state current

fora sinusoidalpulsewith widthtp<10ms,and cor­respondingvalue of I

I

(A),I t(A s)

TSM

1000

500

200

100

12 510

Fig.9:

Thermalresistancejunctiontoambientver-

2

I t

t.

Tj initial=25°C

ITSM

tp(ms)

suscoppersurfaceundertab (Epoxy printed circuit
boardFR4, copperthickness:35µm).

Rth(j-a) (°C/W)

80
70
60
50
40
30
20
10

0

0 4 8 12 16 20 24 28 32 36 40

S(Cu) (cm )

Fig.8:On-statecharacteristics(maximumvalues).

TM

I (A)

200

Tj max.:
Vto=0.87V

100

Rt=20 mΩ

Tj=Tj max.

10

Tj=25°C

V (V)TM

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig.10:

Typicalreflow solderingheatprofile,either

formounting onFR4 or metal-backedboards.

T(°C)

250

200

150

100

50

0

0 40 80 120 160 200 240 280 320 360

Epoxy FR4

board

Metal-backed

245°C
215°C

board

t (s)

4/5



PACKAGEMECHANICALDATA

2

D

PAK

L2

L

L3

Note 1: Max resin gateprotusion = 0.5 mm

E

A1

B2

B

G

2.0 MIN.
FLATZONE

C2

T2035-600G

DIMENSIONS

REF.

A

A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

D

B 0.70 0.93 0.027 0.037
B2 1.40 0.055

C 0.45 0.60 0.017 0.024

C

R

C2 1.21 1.36 0.047 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.28 0.393 0.405

A2

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055

V2

L3 1.40 1.75 0.055 0.069

R 0.40 0.016
V2 0° 8° 0° 8°

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

FOOTPRINT DIMENSIONS

16.90

(in millimeters)

MARKING

: T2035

600G

10.30

8.90

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor forany infringementof patents or other rights ofthird parties which mayresult from its use.No
license is grantedby implication or otherwise underany patent orpatent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subject tochange withoutnotice. This publicationsupersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics productsarenot authorizedfor use as critical components in lifesupport devicesor systemswithout express
written approval ofSGS-THOMSON Microelectronics.

3.70

 1998 SGS-THOMSON Microelectronics- Printed in Italy- All rights reserved.

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5.08

1.30



5/5