Datasheet T16T Datasheet (ST)

T16T

Snubberless™, logic level and standard 16 A Triacs

Features

■ Medium current Triac

■ High static and dynamic commutation

■ Low thermal resistance with clip bonding

■ Packages is RoHS (2002/95/EC) compliant

■ 600 V V

RM

Applications

■ Value sensitive application

■ General purpose ac line load switching

■ Motor control circuits in power tools

■ Small home appliances, lighting

■ Inrush current limiting circuits

■ Overvoltage crowbar protection

Description

Available in through-hole, the T16T series of
Triacs can be used as on/off or phase angle
control function in general purpose ac switching
where high commutation capability is required.

A2

G

A1

A1

A2

G

TO-220AB insulated

(T16xxT-6I)

Table 1. Device summary

Order code Symbol Value

3Q

I

T1610T-6I

T1620T-6I
T1635T-6I

GT

logic level

3Q

I

GT

Snubberless

20 / 35 mA

10 mA

This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.

Provides insulation rated at 2500 V rms
(TO-220AB insulated package).

TM: Snubberless is a trademark of STMicroelectronics

January 2010 Doc ID 16488 Rev 2 1/9

www.st.com

9

Characteristics T16T

1 Characteristics

Table 2. Absolute maximum ratings (limiting values; Tj = 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

I

T(RMS)

I

dI/dt

V

DSM

V

I

P

G(AV)

T

On-state rms current (full sine wave) Tc = 86 °C 16 A

Non repetitive surge peak on-state current (full

TSM

cycle, Tj initial = 25 °C)

²

tI²t Value for fusing tp = 10 ms 105 A²s

I

Critical rate of rise of on-state current I

= 2 x IGT

G

tr ≤ 100 ns

/

Non repetitive surge peak off-state
voltage

RSM

Peak gate current tp = 20 µs Tj = 125 °C 4 A

GM

F = 50 Hz t

F = 60 Hz t

F = 60 Hz T

= 10 ms Tj = 25 °C

t

p

= 20 ms 120

p

= 16.7 ms 126

p

= 125 °C 50 A/µs

j

V

DRM/VRRM

+ 100

Average gate power dissipation Tj = 125 °C 1 W

Storage junction temperature range - 40 to + 150 °C

stg

Operating junction temperature range - 40 to + 125 °C

T

j

A

V

2/9 Doc ID 16488 Rev 2

T16T Characteristics

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

T16xxT

Symbol Test conditions Quadrant

T1610T T1620T T1635T

I

GT

V

V

I

H

GT

GD

I

(1)

VD = 12 V RL = 30 Ω

I - II - III

MAX.

IV

VD = V
Tj = 25 °C

VD = V

= 125 °C

T

j

(2)

IT = 500 mA MAX. 12 25 40 mA

, RL = 3.3 kΩ,

DRM

, RL = 3.3 kΩ,

DRM

ALL MAX. 1.3 V

ALL MIN. 0.2 V

I - III

IG = 1.2 I

L

GT

MAX.

10 20 35

20 35 50

II 30 40 80

dV/dt

(di/dt)c

(2)

VD = 67% V

DRM,

gate open

Tj = 125 °C

= 150 °C

T

j

(3)

MIN.

(dV/dt)c = 0.1 V/µs

(dV/dt)c = 10 V/µs 4

Without snubber 6 16

(2)

(dV/dt)c = 0.1 V/µs

(dV/dt)c = 10 V/µs 1

Tj = 125 °C

= 150 °C

T

j

MIN.

(3)

100 1000 2000

20 500 1000

8

3

Without snubber 3 12

1. minimum IGT is guaranted at 5% of IGT max.

2. for both polarities of A2 referenced to A1.

3. derating information for excess temperature above T

Table 4. Static characteristics

max.

j

Unit

mA

mAIV

V/µs

A/ms

Symbol Test conditions Value Unit

(1)

V

T

V

TO

R

D

I

DRM

I

RRM

1. for both polarities of A2 referenced to A1.

2. derating information for excess temperature above T

ITM = 22.6 A, tp = 380 µs Tj = 25 °C MAX. 1.55 V

(1)

Threshold voltage Tj = 125 °C MAX. 0.85 V

(1)

Dynamic resistance Tj = 125 °C MAX. 30 mΩ

Tj = 25 °C

V

DRM

V

= 0.9 x V

D

= V

RRM

DRM

max.

j

= 125 °C 1

T

j

Tj = 150 °C

(2)

MAX.

TYP. 1.9

5µA

Doc ID 16488 Rev 2 3/9

mA

Characteristics T16T

Table 5. Thermal resistance

Symbol Parameter Value Unit

R

R

Figure 1. Maximum power dissipation versus

20

18

16

14

12

10

Figure 3. On-state rms current versus

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Junction to case (AC) 2.1 °C/W

th(j-c)

Junction to ambient (DC) 60 °C/W

th(j-a)

Figure 2. On-state rms current versus case

rms on-state current (full cycle)

P(W)

α = 180°

8

6

4

2

0

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

180°

I

T(RMS)

(A)

I

T(RMS)

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125

temperature (full cycle)

(A)

TO-220 ins.

Figure 4. Relative variation of thermal

ambient temperature

I

(A)

T(RMS)

α = 180°

TO-220 ins.

Ta(°C)

0 25 50 75 100 125

1.0E+00

1.0E-01

1.0E-02

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

impedance versus pulse duration

K = [Zth/ Rth]

Z

th(j-c)

TO-220AB

TO-220AB

Z

th(j-a)

α = 180°

TC(°C)

Tp(s)

Figure 5. On state characteristics

Figure 6. Surge peak on state current versus

(maximum values)

ITM(A)

1000

100

10

1

0

Tj= 125 °C

Tj= 25 °C

VTM(V)

1234

Tjmax:
Vto= 0.85 V
Rd= 25 mW

4/9 Doc ID 16488 Rev 2

I

TMS

120

100

80

60

40

20

0

1 10 100 1000

number of cycles

(A)

Non repetitive

Tjinitial = 25 °C

Repetitive
Tc= 86 °C

TO-220AB ins.

t = 20 ms

One cycle

Number of cycles

T16T Characteristics

Figure 7. Non repetitive surge peak on state

current for a sinusoidal

I

(A), I²t (A²s)

TSM

10000

1000

dl /dt limitation: 50 A / µs

100

10

0.01 0.10 1.00 10.00

Tjinitial = 25 °C

I

TSM

I²t

tp(ms)

Figure 9. Relative variation of holding

current and latching current versus
junction temperature

IH,[Tj] / IH,IL[Tj= 25 °C]I

L

2.5

2.0

1.5

1.0

I

0.5

0.0

-50 -25 0 25 50 75 100 125

Tj(°C)

L

I

H

Figure 8. Relative variation of gate trigger

current and gate trigger voltage
versus junction temperature

IGT,VGT[Tj] / IGT,VGT[Tj= 25 °C]

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125

IGTQ3

IGTQ1-Q2

IGTQ1-Q2-Q3

Tj(°C)

Figure 10. Relative variation of critical rate of

decrease of main current versus
junction temperature

dV / dt [Tj] / [Tj= 125 °C]dV / dt

7

6

5

4

3

2

1

0

25 50 75 100 125

1

Tj(°C)

VD=VR= 402 V

Figure 11. Relative variation of critical rate of

decrease of main current versus
junction temperature

(dl / dt)c[Tj] / [Tj= 125 °C](dl / dt)

8

7

6

5

4

3

2

1

0

25 50 75 100 125

c

Tj(°C)

Doc ID 16488 Rev 2 5/9

Figure 12. Leakage current versus junction

temperature for different values of
blocking voltage (typical values)

I

DRM/IRRM[Tj;VDRM/VRRM

1.0E+00

1.0E-01

1.0E-02

1.0E-03
25 50 75 100

[Tj= 125 °C; 700 V]

V

DRM=VRRM

] / I

DRM/IRRM

V

DRM=VRRM

= 400 V

V

= 600 V

DRM=VRRM

= 200 V

125

Ordering information scheme T16T

2 Ordering information scheme

Figure 13. Ordering information scheme

T 16 10 T - 6 I

TRIAC

Current

16 = 16 A

Sensitivity

10 = 10 mA
20 = 20 mA
35 = 35 mA

Application specific

Voltage

6 = 600 V

Package
I = TO-220AB-Ins.

6/9 Doc ID 16488 Rev 2

T16T Package mechanical data

3 Package mechanical data

● Epoxy meets UL94, V0

● Lead-free packages

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. TO-220AB insulated dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 15.20 15.90 0.598 0.625

a1 3.75 0.147

B

Ø I

C

b2

a2 13.00 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409

L

A

I4

l3

a1

l2

a2

F

b1 0.61 0.88 0.024 0.034

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

c2

c1 0.49 0.70 0.019 0.027

c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106

b1

M

e

F 6.20 6.60 0.244 0.259

c1

ØI 3.75 3.85 0.147 0.151

I4 15.80 16.40 16.80 0.622 0.646 0.661

L 2.65 2.95 0.104 0.116

l2 1.14 1.70 0.044 0.066

l3 1.14 1.70 0.044 0.066

M2.60 0.102

Doc ID 16488 Rev 2 7/9

Ordering information T16T

4 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

T1610T-6I T1610T-6I

TO-220AB ins. 2.3 g 50 TubeT1620T-6I T1620T-6I

T1635T-6I T1635T-6I

5 Revision history

Table 8. Document revision history

Date Revision Changes

03-Dec-2009 1 Initial release.

18-Jan-2010 2 Updated pag.1.

8/9 Doc ID 16488 Rev 2

T16T

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Doc ID 16488 Rev 2 9/9