Datasheet T1235-600G Datasheet (SGS Thomson Microelectronics)



FEATURES

HIGHCOMMUTATION (dI/dt)c> 6.5 A/ms
withoutsnubber

HIGHSTATICdV/dt > 500V/µs

T1235-600G

HIGH PERFORMANCE TRIAC

A2

DESCRIPTION

The T1235-600G triac uses a high performance
SNUBBERLESS

TM

technology.

The part is intended for general purpose
applicationsusingsurfacemounttechnology.

D

2

PAK

A1

A2

G

ABSOLUTERATINGS (limitingvalues)

Symbol Parameter Value Unit

V

DRM

V

RRM

I

T(RMS)

Repetitivepeak off-statevoltage

RMSon-statecurrent

Tj= 125°C 600 V

Tc=105°C12A

(360°conduction angle)

I

TSM

Non repetitivesurgepeak on-statecurrent

tp = 8.3ms 126 A

(Tj initial= 25°C)

tp = 10ms 120

2

tI

I

2

t Value(half-cycle,50 Hz) tp = 10ms 72 A2s

dI/dt Criticalrate of riseof on-statecurrent

Repetitive

F = 50Hz

I

=500 mA dIG/dt =1 A/µs.

G

Non Repetitive 100

T

stg

T

j

Storagetemperaturerange
Operatingjunctiontemperaturerange

Tl Maximumtemperaturefor solderingduring 10s 260

January 1998- Ed: 1D

20 A/µs

-40, +150

-40, +125

°C

°

C

1/5

T1235-600G

THERMALRESISTANCES

Symbol Parameter Value Unit

2

Rth(j-a) Junctionto ambiant(S=1cm
Rth(j-c) Junctionto case forDC 1.8 °C/W

)45

°

C/W

Rth(j-c)

GATECHARACTERISTICS

P

=1W PGM=10W(tp=20µs) IGM=4 A (tp = 20µs)

G (AV)

Junctionto caseforAC 360°conductionangle(F=50Hz)

(maximumvalues)

1.4

ELECTRICALCHARACTERISTICS

Symbol Test Conditions Quadrant Sensitivity Unit

I

GT

VD=12V (DC) RL=33

Ω

Tj= 25°C I-II-III MIN 2 mA

MAX 35

V

GT

V

GD

*I

I

H

I

L

VD=12V (DC) RL=33Ω
VD=V

DRMRL

= 100mA Gateopen Tj= 25°C MAX 35 mA

T

IG=1.2 I

=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V

GT

Tj= 25°C I-II-III MAX 1.3 V

Tj= 25°C I-III MAX 50 mA

II MAX 80

V

I

DRM

TM*

ITM= 17A tp= 380µs Tj= 25°C MAX 1.5 V
VD=V

DRM

Tj= 25°C MAX 5

°

C/W

µ

A

I

RRM

dV/dt* Linearslope uptoV

VR=V

RRM

=67%V

D

DRM

Tj= 125°C MIN 500 V/µs

Gateopen

(dI/dt)c*

* For eitherpolarity of electrode A2 voltagewith referenceto electrode A1.

ORDERINGINFORMATION

Withoutsnubber

Tj= 125°C MIN 6.5 A/ms

Add”-TR” suffixfor Tape &Reelshipment

T 12 35 - 600 G

TRIAC

CURRENT

2/5

SENSITIVITY



Tj=125°C MAX 2 mA

PACKAGE:

2

G=D

PAK

VOLTAGE

T1235-600G

Fig. 1:

Maximum power dissipation versus RMS

on-statecurrent.

P(W)

16
14
12
10

α=120°

α=90°

α=180°

8
6
4

α=30°

2
0

024681012

Fig. 3:

RMS on-state current versus case tem-

α=60°

I (A)T(RMS)

perature.

I (A)

T(RMS)

14
12
10

8
6

α=180°

Fig.2: Correlationbetweenmaximumpowerdissi­pation and maximum allowable temperatures
(TambandTcase)for differentthermal resistances
heatsink+contact.

P(W) Tcase (°C)

16
14

Rth=6°C/W

Rth=2°C/WRth=4°C/W

Rth=0°C/W

105

12
10

8

110

115

6
4
2
0

0 20 40 60 80 100 120 140

Fig. 4:

α=180°

Tamb(°C)

Relative variation of thermal impedance

120

125

versuspulseduration.

K=[Zth/Rth]

1.00

Zth(j-c)

Zth(j-a)

0.10

4
2
0

0 25 50 75 100 125

Fig.5:

Relativevariationof gatetriggercurrentand

Tcase(°C)

holding current versus junction temperature(typi­calvalues).

I ,I [Tj]/I ,I [Tj=25°C]GT H GT H

2.5

2.0

1.5

1.0

0.5

0.0

IGT

IH

Tj(°C)

-40 -20 0 20 40 60 80 100 120 140



tp(s)

0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 6:

Non repetitive surge peak on-statecurrent

versusnumberof cycles.

I (A)TSM

120

Tj initial=25°C

100

80

60

40

20

0

1 10 100 1000

Number of cycles

F=50Hz

3/5

T1235-600G

Fig. 7: Non repetitive surge peak on-state current

fora sinusoidalpulsewith widthtp<10ms,and cor­respondingvalue of I

I

(A),I t(A s)

TSM

500

100

10

12 510

2

t.

I t

TSM

I

tp(ms)

Tj initial=25°C

Fig.9: Thermalresistancejunction toambientver­suscoppersurfaceundertab (Epoxy printed circuit
boardFR4, copperthickness: 35µm).

Rth(j-a) (°C/W)

80
70
60
50
40
30
20
10

0

0 4 8 12 16 20 24 28 32 36 40

S(Cu) (cm )

Fig.8:On-statecharacteristics(maximumvalues).

TM

I (A)

100

Tj max.:
Vto=0.77V
Rt=42 mΩ

Tj=Tj max.

10

Tj=25°C

V (V)TM

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Fig.10:

Typicalreflow solderingheatprofile,either

formounting onFR4 or metal-backedboards.

T(°C)

250

200

150

100

50

0

0 40 80 120 160 200 240 280 320 360

Epoxy FR4

board

Metal-backed

245°C
215°C

board

t (s)

4/5



PACKAGEMECHANICAL DATA

2

D

PAK

L2

L

L3

Note 1: Max resin gateprotusion = 0.5 mm

E

A1

B2

B

G

2.0 MIN.
FLAT ZONE

C2

T1235-600G

DIMENSIONS

REF.

A

A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

D

B 0.70 0.93 0.027 0.037
B2 1.40 0.055

C 0.45 0.60 0.017 0.024

C

R

C2 1.21 1.36 0.047 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.28 0.393 0.405

A2

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055

V2

L3 1.40 1.75 0.055 0.069

R 0.40 0.016
V2 0° 8° 0° 8°

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

FOOTPRINT DIMENSIONS

16.90

(in millimeters)

MARKING

: T1235

600G

10.30

8.90

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor forany infringementof patents or other rights ofthird parties which mayresult from its use.No
license is grantedby implication or otherwise underany patent orpatent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subject tochange withoutnotice. This publicationsupersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics productsarenot authorizedfor use as critical components in lifesupport devicesor systemswithout express
written approval ofSGS-THOMSON Microelectronics.

3.70

 1998 SGS-THOMSON Microelectronics- Printed in Italy- All rights reserved.

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5.08

1.30



5/5