Page 1
SEMICONDUCTOR
TECHNICAL DATA
AC POWER CONTROL APPLICATION.
T10A6CI
Bi-Directional Triode Thyristor
10A Mold TRIAC
FEATURES
ᴌRepetitive Peak Off-state Voltage : V
ᴌR.M.S On-State Current : I
T(RMS)
=10A.
ᴌHigh Commutaing (dv/dt)
ᴌIsolation Voltage : V
=1500V AC
ISOL
(UL Recognized : E166398)
APPLICATIONS
ᴌSwitching Mode Power Supply
ᴌSpeed Control of Small Motors
ᴌSolid State Relay
ᴌLight Dimmer
ᴌWashing Machine
ᴌTemperature Control of Heater
DRM
=600V.
A
U
E
L
K
D
N
T
O
1
F
B
G
L
M
J
D
N
T
3
2
Q
P
S
T
1. T1
2. T2
3. GATE
C
MILLIMETERS
DIM
10.30 MAX
A
15.30 MAX
B
C
2.70Ź0.30
D
0.85 MAX
Ѹ3.20Ź0.20
E
F
3.00Ź0.30
12.30 MAX
G
0.75 MAX
H
R
V
H
13.60Ź0.50
J
K
3.90 MAX
L
1.20
1.30
M
N
2.54
4.50Ź0.20
O
6.80
P
2.60Ź0.20
Q
R
10Ɓ
S
25Ş
5Ş
T
U
0.5
V
2.60Ź0.15
TO-220IS
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Non-Repetitive Peak Off-state Voltage
Repetitive Peak Off-state Voltage
R.M.S On-state Current
(Full Sine Waveform Tc=80ᴱ)
Peak One Cycle Surge On-state Current
(Non-Repetitive)
I2t Limit Value (1mS⏊t⏊10mS)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (Ac, t=1min.)
V
DSM
V
DRM
I
T(RMS)
I
TSM
700 V
600 V
10 A
90 (50Hz 1 Cycle)
100 (60Hz 1 Cycle)
I2t 41.6 A2S
P
P
V
V
GM
G(AV)
GM
I
GM
T
j
T
stg
ISOL
5 W
0.5 W
10 V
2 A
-40ᴕ125
-40ᴕ125
1500 V
A
ᴱ
ᴱ
1997. 10. 28 1/3
Revision No : 2
Page 2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
T10A6CI
Repetitive Peak Off-state Current
Gate Trigger Voltage
Gate Trigger Current
Peak On-State Voltage
Gate Non-Trigger Voltage
Holding Current
Critical Rate of Rise of
Off-state Voltage
Critical Rate of Rise of
Off-state Voltage at commutation
Thermal Resistance
Ẑ
ẑ
Ẓ
ẓ
Ẑ
ẑ
Ẓ
ẓ
I
DRM
V
GT
I
GT
V
TM
V
GD
I
H
dV/d
(dV/dt)C
R
th(j-c)
V
DRM
VD=12V,
=20ή
R
L
ITM=15A
VD=Rated, Tc=125ᴱ
VD=12V, ITM=1A
Tj=125ᴱ, V
t
Exponential Rise
Tj=125ᴱ,
(di/dt)C=-5.0A/mS, V
=Rated
T2(+), Gate(+)
T2(+), Gate(-)
T2(-), Gate(-)
T2(-), Gate(+)
T2(+), Gate(+)
T2(+), Gate(-)
T2(-), Gate(-)
T2(-), Gate(+)
=Rated
DRM
=2/3V
D
DRM
- - 20
- - 1.5
- - 1.5
- - 1.5
- - -
- - 30
- - 30
- - 30
- - -
- - 1.5 V
0.2 - - V
- - 50 mA
- 300 -
10 - -
Junction to Case, AC - - 3.4
ỌA
V
mA
V/ỌS
V/ỌS
ᴱ/W
1997. 10. 28 2/3
Revision No : 2
Page 3
T10A6CI
GATE TRIGGER CHARACTERISTIC
1
10
G
PEAK GATE
VOLTAGE
AVE
R
A
GE
DISSIPATION
GA
GATE TRIGGER VOLTAGE
0
10
25 C
GATE NON TRIGGER VOLTAGE
-1
10
12
INSTANTANEOUS GATE VOLTAGE V (V)
10
10 10
INSTANTANEOUS GATE CURRENT I (mA)
SURGE ON-STATE CURRENT(60Hz)
200
180
160
140
120
100
80
60
40
SURGE ON CURRENT (A)
20
0
0
10
NUMBER OF CYCLES AT 60Hz
1
10
TIME
PEAK GATE
T
E
DIS
S
I
PA
10
T
IO
3
G
2
CURRENT
N
PEAK GATE
ι - ν
2
10
(A)
1
T
10
ι
0
10
INSTANTANEOUS ON-STATE CURRENT
TT
1.81.41.00.6 2.2 2.6 3.0
INSTANTANEOUS ON-STATE VOLTAGE ν (V)
Ta MAX - I
140
120
100
80
60
40
20
TEMPERATURE Ta MAX ( C)
MAXIMUM ALLOWABLE AMBIENT
0
R.M.S ON-STATE CURRENT I (A)
T
T(RMS)
3.02.52.00 0.5 1.0 1.5
T(RMS)
Tc MAX - I
140
120
100
80
60
40
MAXIMUM ALLOWABLE CASE
0
20
TEMPERATURE Tc MAX ( C)
R.M.S ON-STATE CURRENT I (A)
TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
th(j-c)
r ( C-W)
1.2
0.8
0.4
TRANSIENT THERMAL IMPEDANCE
0
-1
10
02
NUMBER OF CYCLES AT 60Hz
10
TIME
T(RMS)
1
151050
T(RMS)
1010
P - I
T(RMS)T(AV)
12
10
8
T(AV)
6
4
2
DISSIPATION P (W)
AVERAGE ON-STATE POWER
20
3
10
0
R.M.S ON-STATE CURRENT I (A)
64208 10
T(RMS)
1997. 10. 28 3/3
Revision No : 2
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