Page 1
PNP Silicon Switching Transistor SXT 3906
● High current gain: 0.1 mA to 100 mA
● Low collector-emitter saturation voltage
Type Ordering Code
SXT 3906 Q68000-A83972A SOT-89
Marking
(tape and reel)
Pin Configuration
1 2 3
B C E
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 40 V
Collector-base voltage VCB0 40
Emitter-base voltage VEB0 5
Collector current I
Total power dissipation, TS = 100˚C
Junction temperature T
Storage temperature range T
C 200 mA
tot 1W
P
j 150 ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 120 K/W
1)
Junction - soldering point Rth JS ≤ 50
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Page 2
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
SXT 3906
Parameter Symbol
UnitValues
min. typ. max.
DC characteristics
V
(BR)CE0 40 – –
C = 1 mA
Collector-base breakdown voltage
C = 10 µA
Emitter-base breakdown voltage
E = 10 µA
CB = 30 V
V
Collector-emitter cutoff current
CE = 30 V, VBE = – 3 V
V
C = 100 µA, VCE = 1 V
C = 1 mA, VCE = 1 V
C = 10 mA, VCE = 1 V
C = 50 mA, VCE = 1 V
C = 100 mA, VCE = 1 V
1)
C = 10 mA, IB = 1 mA
C = 50 mA, IB = 5 mA
Base-emitter saturation voltage
C = 10 mA, IB = 1 mA
C = 50 mA, IB = 5 mA
1)
V
(BR)CB0 40 – –
V
(BR)EB0 5––
I
CB0 ––50
I
CEV ––50
FE
h
V
V
60
80
100
60
30
CEsat
–
–
BEsat
0.65
–
–
–
–
–
–
–
–
–
–
–
–
300
–
–
0.25
0.4
0.85
0.95
VCollector-emitter breakdown voltage
nACollector-base cutoff current
–DC current gain
VCollector-emitter saturation voltage
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 2
Page 3
Electrical Characteristics
I
R
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
AC characteristics
C = 10 mA, VCE = 20 V, f = 100 MHz
SXT 3906
min. typ. max.
f
T 250 – –
UnitValuesParameter Symbol
MHzTransition frequency
C
obo – – 4.5
CB = 5 V, f = 1 MHz
V
Input capacitance
EB = 0.5 V, f = 1 MHz
V
CE = 1 mA, VCE = 10 V, f = 1 kHz
Voltage feedback ratio
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 1 mA, VCE = 10 V, f = 1 kHz
C
ibo ––10
h
ie 2–12
h
re 0.1 – 10
h
fe 100 – 400
h
oe 3–60
NF ––4
C = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz
S = 1 kΩ
pFOutput capacitance
kΩInput impedance
10
–Small-signal current gain
µSOutput admittance
dBNoise figure
–4
Switching times
CC = 3 V, VBE = 0.5 V, IC = 10 mA,
V
B1 = 1 mA
t
d
tr
–
–
–
–
35
35
ns
ns
V
CC = 3 V, IC = 10 mA,
B1 = 1 mA
ts
tf
–
–
–
–
225
75
ns
ns
Semiconductor Group 3
Page 4
Test circuits
Delay and rise time
SXT 3906
Storage and fall time
Semiconductor Group 4
Page 5
SXT 3906
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Saturation voltage IC = f (VBE sat, VCE sat)
Permissible pulse load P
tot max/Ptot DC = f (tp)
Open-circuit reverse voltage transfer ratio
h12e = f (IC)
Semiconductor Group 5
Page 6
SXT 3906
Small-signal current gain
fe = f (IC)
h
CE = 10 V, f = 1 MHz
V
Output admittance
22e = f (IC)
h
CE = 10 V, f = 1 MHz
V
Delay time td = f (IC)
Rise time t
r = f (IC)
Fall time tf = f (IC)
Semiconductor Group 6
Page 7
DC current gain hFE = f (IC)
CE = 1 V, normalized
V
SXT 3906
Semiconductor Group 7
Loading...