Page 1
PNP Silicon Switching Transistor SXT 2907 A
● High current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
Type Ordering Code
SXT 2907 A Q68000-A83002F SOT-89
Marking
(tape and reel)
Pin Configuration
1 2 3
B C E
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 60 V
Collector-base voltage VCB0 60
Emitter-base voltage VEB0 5
Collector current I
Total power dissipation, TS = 120˚C
Junction temperature T
Storage temperature range T
C 600 mA
tot 1W
P
j 150 ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 90 K/W
1)
Junction - soldering point Rth JS ≤ 30
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Page 2
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
SXT 2907 A
Parameter Symbol
UnitValues
min. typ. max.
DC characteristics
V
(BR)CE0 60 – –
C = 10 mA
Collector-base breakdown voltage
C = 10 µA
Emitter-base breakdown voltage
E = 10 µA
Collector-base cutoff current
CB = 60 V, IE = 0
V
CB = 60 V, IE = 0, TA = 125 ˚C
V
CE = 30 V, VBE = 0.5 V
V
Emitter-base cutoff current
EB = 3 V, IC = 0
V
V
(BR)CB0 60 – –
V
(BR)EB0 5––
CB0
I
–
–
I
CEX ––50
I
EB0 ––10
–
–
10
10
VCollector-emitter breakdown voltage
nA
µA
nACollector cutoff current
CE = 30 V, VBE = 3 V
V
C = 100 µA, VCE = 10 V
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 150 mA, VCE = 10 V
C = 500 mA, VCE = 10 V
C = 150 mA, IB = 15 mA
C = 500 mA, IB = 50 mA
Base-emitter saturation voltage
C = 150 mA, IB = 15 mA
C = 500 mA, IB = 50 mA
1)
1)
Base cutoff current
I
BL ––50
FE
h
V
V
75
100
100
100
50
CEsat
–
–
BEsat
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
–
0.4
1.6
1.3
2.0
–DC current gain
VCollector-emitter saturation voltage
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 2
Page 3
Electrical Characteristics
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
AC characteristics
SXT 2907 A
UnitValuesParameter Symbol
min. typ. max.
C = 50 mA, VCE = 20 V, f = 100 MHz
CB = 10 V, f = 1 MHz
V
Input capacitance
EB = 2 V, f = 1 MHz
V
Switching times
CC = 30 V, VBE = 0.5 V, IC = 150 mA,
V
B1 = 15 mA
V
CC = 6 V, IC = 150 mA,
B1 = IB2 = 15 mA
Test circuits
Delay and rise time
f
T 200 – –
C
obo ––8
C
ibo ––30
t
d
tr
ts
tf
–
–
–
–
–
–
–
–
10
40
80
30
MHzTransition frequency
pFOutput capacitance
ns
ns
ns
ns
Storage and fall time
Semiconductor Group 3
Page 4
SXT 2907 A
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance
cb = f (VCB)
C
f = 1 MHz
Permissible pulse load P
tot max / Ptot DC = f (tp)
Transition frequency f
CE = 20 V
V
T = f (IC)
Semiconductor Group 4
Page 5
SXT 2907 A
Saturation voltage IC = f (VBE sat, VCE sat)
FE = 10
h
Delay time td = f (IC)
Rise time t
FE = 10
h
r = f (IC)
Storage time t
s = f (IC)
Fall time tf = f (IC)
Semiconductor Group 5
Page 6
DC current gain hFE = f (IC)
SXT 2907 A
Semiconductor Group 6
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