Page 1
NPN Silicon Switching Transistor SXT 2222 A
● High current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
Type Ordering Code
SXT 2222 A Q68000-A83302P SOT-89
Marking
(tape and reel)
Pin Configuration
1 2 3
B C E
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 40 V
Collector-base voltage VCB0 75
Emitter-base voltage VEB0 6
Collector current I
Total power dissipation, TS = 120˚C
Junction temperature T
Storage temperature range T
C 600 mA
tot 1W
P
j 150 ˚C
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 90 K/W
1)
Junction - soldering point Rth JS ≤ 30
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Page 2
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
SXT 2222 A
Parameter Symbol
UnitValues
min. typ. max.
DC characteristics
V
(BR)CE0 40 – –
C = 10 mA
Collector-base breakdown voltage
C = 10 µA
Emitter-base breakdown voltage
E = 10 µA
Collector-base cutoff current
CB = 60 V, IE = 0
V
CB = 60 V, IE = 0, TA = 125 ˚C
V
CE = 30 V, VBE = 0.5 V
V
Emitter-base cutoff current
EB = 3 V, IC = 0
V
V
(BR)CB0 75 – –
V
(BR)EB0 6––
CB0
I
–
–
I
CEX ––10
I
EB0 ––10
–
–
10
10
VCollector-emitter breakdown voltage
nA
µA
nACollector cutoff current
Base cutoff current
CE = 30 V, VBE = – 3 V
V
C = 100 µA, VCE = 10 V
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 10 mA, VCE = 10 V, TA = – 55 ˚C
C = 150 mA, VCE = 10 V
C = 150 mA, VCE = 1 V
C = 500 mA, VCE = 10 V
C = 150 mA, IB = 15 mA
C = 500 mA, IB = 50 mA
Base-emitter saturation voltage
C = 150 mA, IB = 15 mA
C = 500 mA, IB = 50 mA
1)
1)
I
BL ––20
h
FE
V
V
35
50
75
35
100
50
40
CEsat
–
–
BEsat
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
–
–
0.3
1.0
1.2
2.0
–DC current gain
VCollector-emitter saturation voltage
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 2
Page 3
Electrical Characteristics
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A = 25 ˚C, unless otherwise specified.
at T
AC characteristics
SXT 2222 A
UnitValuesParameter Symbol
min. typ. max.
f
T 300 – –
C = 50 mA, VCE = 20 V, f = 100 MHz
C
obo ––8
CB = 10 V, f = 1 MHz
V
Input capacitance
EB = 2 V, f = 1 MHz
V
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 10 mA, VCE = 10 V, f = 1 kHz
Voltage feedback ratio
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 10 mA, VCE = 10 V, f = 1 kHz
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 10 mA, VCE = 10 V, f = 1 kHz
C = 1 mA, VCE = 10 V, f = 1 kHz
C = 10 mA, VCE = 10 V, f = 1 kHz
E = 20 mA, VCB = 20 V, f = 31.8 MHz
C
ibo ––25
ie
h
2
0.25
re
h
–
–
fe
h
50
75
oe
h
5
25
r
b'Cc – – 150
–
–
–
–
–
–
–
–
8
1.25
8
4
300
375
35
200
MHzTransition frequency
pFOutput capacitance
kΩInput impedance
10
–Small-signal current gain
µSOutput admittance
psCollector-base time constant
–4
Noise figure
C = 100 µA, VCE = 10 V, RS = 1 kΩ, f = 1 kHz
dBNF ––4
Switching times
CC = 30 V, VBE = 0.5 V, IC = 150 mA,
V
B1 = 15 mA
V
CC = 30 V, IC = 150 mA,
B1 = IB2 = 15 mA
t
d
tr
ts
tf
–
–
–
–
–
–
–
–
10
25
225
60
ns
ns
ns
ns
Semiconductor Group 3
Page 4
Test circuits
Delay and rise time
SXT 2222 A
Storage and fall time
Semiconductor Group 4
Page 5
SXT 2222 A
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance
cb = f (VCB)
C
f = 1 MHz
Permissible pulse load P
tot max / Ptot DC = f (tp)
Transition frequency f
CE = 20 V
V
T = f (IC)
Semiconductor Group 5
Page 6
SXT 2222 A
Saturation voltage IC = f (VBE sat, VCE sat)
FE = 10
h
DC current gain hFE = f (IC)
CE = 10 V
V
Delay time t
Rise time t
d = f (IC)
r = f (IC)
Storage time t
Fall time t
f = f (IC)
s = f (IC)
Semiconductor Group 6
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