Datasheet SXA-289 Datasheet (Stanford Microdevices)

Product Description

Stanford Microdevices’ SXA-289 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.

These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 5-2000 MHz
cellular, ISM, WLL and narrowband PCS applications.

Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.

Typical IP3, P1dB, Gain

45
40
35
30
25

dBm

20
15
10

IP3

P1dB

Gain(dB)

5
0

850 MHz 1960 MHz

IP3

P1dB

Gain(dB)

Preliminary

SXA-289

5-2000 MHz Medium Power
GaAsHBT Amplifier

Product Features

• Patented High Reliability GaAs HBT Technology

• High Output 3rd Order Intercept : +41.5 dBm typ.

at 1960 MHz

• Surface-Mountable Power Plastic Package

Applications

• PCS, Cellular Systems

• High Linearity IF Amplifiers

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

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Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085

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1

mBd
mBd

Bd
Bd

-

mBd
mBd

Bd
Bd

Am58501021

0.810.02

0.835.04

0.42

0.42

0.51

1:3.1
1:7.1

5.14

0.5

7.5

EDS-100622 Rev E

5.12

SXA-289 5-2000 MHz Power Amplifier

850 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V

Note: Tuned for Output IP3

P1dB vs Frequency

26

25

24

dBm

23

-40C

25C

22

21

800 825 850 875 900 925 950

MHz

Input/Output Return Loss,

Isolation vs Frequency

5
0

-5

S22

-10

-15

dB

-20

S11

-25

-30

-35

800 850 900 950

MHz

S12

85C

Gain vs. Frequency

25

23

21

dB

19

85C

25C

17

15

800 825 850 875 900 925 950

MHz

Third Order Intercept vs. Frequency

(P

per tone = 11dBm)

45

OUT

43

41

39

25C

85C

dBm

37

35

800 825 850 875 900 925 950

MHz

-40C

-40C

Third Order Intercept vs Tone Power

44

42

25C

40

dBm

85C

-40C

38

36

03691215

P

per tone (dBm)

OUT

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

180
160
140
120
100

80
60

Device Current (mA)

40
20

0

0246810

2

Device Current vs. Source Voltage

25C

-40C
85C

VS (V)

http://www.stanfordmicro.com

EDS-100622 Rev E

SXA-289 5-2000 MHz Power Amplifier

1960 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V

Note: Tuned for Output IP3

26

P1dB vs Frequency

25

24

dBm

23

-40C

25C

22

21

1930 1940 1950 1960 1970 1980 1990

MHz

Input/Output Return Loss,

Isolation vs Frequency

0

dB

-5

-10

-15

-20

-25

-30

S22

S11

S12

-35

1930 1940 1950 1960 1970 1980 1990

MHz

85C

20

Gain vs. Frequency

18

16

dB

14

85C

25C

12

10

1930 1940 1950 1960 1970 1980 1990

MHz

Third Order Intercept vs. Frequency

(P

per tone = 11dBm)

25C

OUT

85C

-40C

44

42

40

dBm

38

36

1930 1940 1950 1960 1970 1980 1990

MHz

-40C

Third Order Intercept vs Tone Power

44

42

40

dBm

38

85C

-40C

25C

36

34

03691215

P

per tone (dBm)

OUT

522 Almanor Ave., Sunnyvale, CA 94085

180
160
140
120
100

80
60

Device Current (mA)

40
20

0

Phone: (800) SMI-MMIC

3

Device Current vs. Source Voltage

25C

-40C
85C

0246810

VS (V)

http://www.stanfordmicro.com

EDS-100622 Rev E

850 MHz Application Circuit

Voltage Feed Resistor Bias Circuit (for > 7V supply)

SXA-289 5-2000 MHz Power Amplifier

390 Ω

180 Ω

220 Ω

6

1.8 KΩ

100 pF

2

100 pF

0.1 µF
(SIZE A)

1000pF

33 nH

Z=50Ω, 12.9°

5.6 pF

850 MHz Schematic

0.1 µF
(SIZE A)

(Rohm)
UMZ1N

1000 pF

1

4

5

3

750Ω

Z=50Ω, 12.9°

5.6 pF

850 MHz Schematic

Vs

Rbias

68pF

33 nH

)sV(egatloVylppuSV7V8V01V21

)smhO(saibR81727426

gnitaRrewoPW5.0W0.1W5.1W0.2

Rbias

390 Ohms

180 Ohms

100 pF

SXA-289

33nH 33nH

5.6pF

STANFORD MICRODEVICES

SOT-89 Eval Board
ECB-101499 Rev A

850 MHz Evaluation Board Layout

Active Current Feedback Bias Circuit (for 5V supply)

Vs = 5V

68 pF

Rbias=4.3 Ω

Vdev

33 nH

SXA-289

100 pF

*Note: IP3 performance degraded due to lower
(4.5V) device voltage.

RF IN RF OUT

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)Bd(ssoLnruteRtupnI8.22-

)mBd(3PItuptuO*7.73

)mBd(Bd1P0.32

UMZ1N

100pF 100pF

0.1 uF

220Ω

1.8KΩ

1

750Ω

5.6pF

1000pF

68pF

SXA-2 8 9

33nH

seulaVrotsiseRsaiBdednemmoceR

VCC

4.3Ω

0.1uF

1000pF
68 pF

RFoutRFin

100pF100pF

GND

NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.

ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

STANFORD MICRODEVICES

XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89

850 MHz Active Bias Evaluation Board Layout

4

http://www.stanfordmicro.com

EDS-100622 Rev E

1960 MHz Application Circuit

Voltage Feed Resistor Bias Circuit (for > 7V supply)

SXA-289 5-2000 MHz Power Amplifier

390 Ω

180 Ω

220 Ω

6

1.8 KΩ

68 pF

68 pF

2

1

0.1 µF
(SIZE A)

1000pF

22nH

1960 MHz Schematic

0.1 µF
(SIZE A)

1000 pF

(Rohm)
UMZ1N

5

750Ω

1960 MHz Schematic

Vs

Rbias

)sV(egatloVylppuSV7V8V01V21

)smhO(saibR81727426

sgnitaRrewoPW5.0W0.1W5.1W0.2

22pF

Rbias

390 Ohms

22nH

180 Ohms

68pF

SXA-289

Z=50Ω, 45.5°

1.8 pF

22nH 22nH

STANFORD MICRODEVICES

SOT-89 Eval Board
ECB-101499 Rev A

1960 MHz Evaluation Board Layout

Active Current Feedback Bias Circuit (for 5V supply)

Vs = 5V

22 pF

4

3

SXA-289

Rbias=4.3 Ω

Vdev

22nH

Z=50Ω, 45.5°

1.2 pF

68pF

*Note: IP3 performance degraded due to lower
(4.5V) device voltage.

RF IN RF OUT

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UMZ1N

68pF 68pF

0.1 uF

220Ω

1.8KΩ

1

750Ω

1000pF

22pF

SXA-289

22nH

seulaVrotsiseRsaiBdednemmoceR

VCC

4.3Ω

0.1uF
1000pF
22pF

1.8pF

1.2pF

RFoutRFin

68pF68pF

GND

NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.

ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

STANFORD MICRODEVICES
XAMP EVALUATION BOARD

ECB-101872 Rev A SOT-89

1960 MHz Active Bias Evaluation Board Layout

5

http://www.stanfordmicro.com

EDS-100622 Rev E

Absolute Maximum Ratings

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Caution: ESD sensitive

Appropriate precautions in handling, packaging and
testing devices must be observed.

SXA-289 5-2000 MHz Power Amplifier

Part Number Ordering Information

rebmuNtraPleeRrePseciveDeziSleeR

982-AXS0001"7

Part Symbolization

The part will be symbolized with a “XA2”

designator on the top surface of the package.

Pin Description

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1esaBniPesaB

2rettimE&DNG

3rotcelloCniProtcelloC

4rettimE&DNG2niPsaemaS

.elbissopsasdaeldnuorgotesolcsasaivecalP

.ecnatcudnidaelecuderotselohaivesU.dnuorgotnoitcennoC

.161±.006

.096±.006

MARKING AREA

TOP VIEW

PCB Pad Layout

.041±.006

.118±.003.177±.004

.059±.003

.030±.004

DOT DENOTES
PIN 1

Package Dimensions

.059±.004

.016REF

.118REF

+.003

.019

-.002

.059

+3°

5°

-4°

+.002

.015

TYP(4X)

-.001

Recommended via and mounting hole pattern

(For RF Ground and Thermal considerations)

.041REF

.016

.008

.010

+.003

-.002

.038±.002

.036±.002

.117±.002

.024±.004

.161 REF

.105±.002

.048±.002

.010±.002 TYP(2X)

.034

.068±.004

Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a

DIMENSIONS ARE IN INCHES [MM]

continuous groundplane on the backside of the board.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

6

http://www.stanfordmicro.com

EDS-100622 Rev E