Page 1
SUR2x60-12
P1
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
SUR2x60-12
VRSM
V
1200
Dimensions SOT-227(ISOTOP)
VRRM
V
1200
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAVM
IFRM
TVJ=TVJM
TC=50oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
100
52
700
A
TVJ=45oC t=10ms (50Hz), sine
IFSM
TVJ=150oC t=10ms(50Hz), sine
TVJ=45oC t=10ms (50Hz), sine
I2t
TVJ=150oC t=10ms(50Hz), sine
TVJ
TVJM
Tstg
Ptot TC=25
VISOL
Md
50/60Hz, RMS
IISOL<1mA
Mounting torque
Terminal connection torque (M4)
450
t=8.3ms (60Hz), sine
500
400
t=8.3ms(60Hz), sine
440
1000
t=8.3ms (60Hz), sine
1050
800
t=8.3ms(60Hz), sine
810
-40...+150
150
-40...+150
o
C 180 W
_
2500
1.5/13
1.5/13
30Weight g
A
A2s
o
C
V~
Nm/lb.in.
Page 2
SUR2x60-12
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
Symbol Test Conditions Characteristic Values
typ. max.
IR
VF
VTO
rT
RthJC
RthCK
trr
IRM
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
IF=60A; TVJ=150oC
TVJ=25oC
For power-loss calculations only 1.65 V
TVJ=TVJM
0.7
0.05
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC ns
VR=540V; IF=60A; -diF/dt=480A/us; L<0.05uH; TVJ=100oC
_
40 60
32
2.2
0.5
14
2.15
2.50
8.3 m
36
Unit
mA
V
K/W
A
FEATURES
* International standard package
miniBLOC (ISOTOP compatible)
* Isolation voltage 2500 V~
* 2 independent FRED in 1
package
* Glass passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* UL File NO.E310749
* RoHS compliant
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
Page 3
SUR2x60-12
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
www.sirectifier.com
Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes
90
A
80
70
60
I
F
50
40
30
20
10
0
= 25°C
T
VJ
TVJ=100°C
TVJ=150°C
01234
V
F
V
12
TVJ=100°C
µC
VR= 540V
10
=60A
I
F
8
Q
r
IF=120A
I
=60A
F
IF=30A
6
4
2
0
10 100 1000
max.
-diF/dt
typ.
A/µs
80
TVJ=100°C
A
V
=540V
R
60
I
IF=60A
IF=120A
RM
IF=60A
IF=30A
40
max.
typ.
20
0
0 200 400 600 800 1000
-diF/dt
A/µs
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
1.4
1.2
1.0
I
K
f
0.8
0.6
0.4
0.2
0.0
RM
Q
R
0 40 80 120 160
T
J
1.0
µs
0.8
t
rr
0.6
0.4
0.2
°C
0.0
0 200 400 600 800 1000
max.
typ.
-diF/dt
TVJ=100°C
VR=540V
IF=60A
I
=120A
F
IF=60A
=30A
I
F
A/µs
60
V
50
V
t
FR
fr
diF/dt
40
V
FR
30
20
10
0
0 200 400 600 800 1000
1200
1000
TVJ=125°C
IF=60A
A/µs
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
ns
800
tfr
600
400
200
0
Fig. 7 Transient thermal impedance junction to case.
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