Datasheet sup28n15 Datasheet

N-Channel 150-V (D-S) 175 °C MOSFET

SUP28N15-52

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

150

DS(on)

0.052 at V

0.060 at V

GS

(Ω)I

= 10 V

= 6 V

GS

D

(A)

28

26

FEATURES

• TrenchFET® Power MOSFET

• 175 °C Junction Temperature

• PWM Optimized

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Primary Side Switch

TO-220AB

DRAIN connected to TAB

GDS

Top View

Ordering Information: SUP28N15-52 E3 (Lead (Pb)-free)

G

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

b

TC = 25 °C

T

= 125 °C

C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH

= 25 °C

T

Maximum Power Dissipation

C

= 25 °C

T

A

(mounted)

Operating Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

S

I

AR

E

AR

P

a

D

, T

T

J

stg

150

± 20

28

16

50

28

25

31 mJ

b

120

3.75

a

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Unit

Junction-to-Ambient

a

PCB Mount

Free Air

Junction-to-Case (Drain)

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating.

Document Number: 71939 S09-1501-Rev. B, 10-Aug-09

a

R

thJA

R

thJC

40

62.5

1.25

°C/W

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SUP28N15-52

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

b

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

a

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

c

V

DS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

b

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

t

d(on)

t

r

t

d(off)

t

f

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 120 V, V

DS

V

= 120 V, V

DS

V

= 120 V, V

DS

V

= 10 V, ID = 5 A, TJ = 125 °C

GS

V

= 10 V, ID = 5 A, TJ = 175 °C

GS

V

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

= 5 V, V

GS

= 10 V, ID = 5 A

GS

= 6 V, ID = 5 A

GS

VDS = 15 V, ID = 25 A

VGS = 0 V, V

VDS = 75 V, V

V

≅ 28 A, V

I

D

= 25 V, f = 1 MHz

DS

= 10 V, ID = 28 A

GS

= 50 V, RL = 3 Ω

DD

= 10 V, Rg = 2.5 Ω

GEN

= 0 V

GS

= 10 V

150

24.5

50 A

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Pulsed Current

Diode Forward Voltage

b

Source-Drain Reverse Recovery Time

I

SM

V

SD

t

rr

IF = 25 A, V

GS

= 0 V

IF = 28 A, dI/dt = 100 A/µs

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

a

Typ .

Max. Unit

± 100 nA

1

50

250

0.042 0.052

0.109

0.145

0.047 0.060

40 S

1725

216

100

33 40

9

12

15 25

70 100

25 40

60 90

50

0.9 1.5 V

95 140 ns

V

µA

Ω

pFOutput Capacitance

nC

ns

A

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Document Number: 71939

S09-1501-Rev. B, 10-Aug-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUP28N15-52

Vishay Siliconix

50

VGS = 10 V thru 7 V

40

30

20

- Drain Current (A)

D

I

10

0

0246810

VDS - Drain-to-Source Voltage (V)

Output Characteristics

60

50

TC = - 55 °C

40

30

20

- Transconductance (S)

fs

g

10

25 °C

125 °C

5 V

4 V

6 V

50

40

30

20

- Drain Current (A)

D

I

10

0

01234567

0.10

0.08

0.06

0.04

- On-Resistance (Ω)

DS(on)

R

0.02

TC = 125 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

VGS = 6 V

VGS = 10 V

- 55 °C

0

0 1020304050

2500

2000

1500

1000

C- Capacitance (pF)

500

0

C

rss

0 30 60 90 120 150

VDS - Drain-to-Source Voltage (V)

Document Number: 71939 S09-1501-Rev. B, 10-Aug-09

- Drain Current (A)

I

D

Transconductance

C

iss

C

oss

Capacitance

- Gate-to-Source Voltage (V)

V

0.00 0 1020304050

ID - Drain Current (A)

On-Resistance vs. Drain Current

20

VDS = 75 V

16

I

= 25 A

D

12

8

GS

4

0

0 102030405060

Qg - Total Gate Charge (nC)

Gate Charge

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SUP28N15-52

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

3.0

V

= 10 V

GS

I

= 5 A

D

2.5

2.0

1.5

- On-Resistance

DS(on)

R

(Normalized)

1.0

0.5

- Source Current (A)I

S

100

T

= 150 °C

J

10

T

= 25 °C

J

0.0

- 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

THERMAL RATINGS

30

25

20

15

- Drain Current (A)I 10

D

5

0

0 25 50 75 100 125 150 175

TC - Case Temperature (°C)

Maximum Avalanche Drain Current

vs. Case Temperature

2

1

Duty Cycle = 0.5

1

0

0.3 0.6 0.9 1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

100

Limited

10

by

R

DS(on)*

- Drain Current (A)I

1

D

TC = 25 °C

Single Pulse

0.1

0.1 1 10 1000 VDS - Drain-to-Source Voltage (V)

>

* V GS minimum VGS at which R

DS(on)

Safe Operating Area

10 µs

100 µs

1 ms

10 ms

100 ms DC

100

is specified

0.2

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-4

10

0.02

0.05

Single Pulse

-3

10

-2

10

Square Wave Pulse Duration (s)

-1

10

11030

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71939

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.

Document Number: 71939

S09-1501-Rev. B, 10-Aug-09

TO-220AB

* M

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471

Note

* M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM

Document Number: 71195 www.vishay.com Revison: 01-Nov-10

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1