Datasheet sum27n20-78 Datasheet

N-Channel 200-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V

(BR)DSS

(V) r

200

TO-263

0.078 @ VGS = 10 V 27

(W) I

DS(on)

0.083 @ VGS = 6 V 26

G

D

D

(A)

SUM27N20-78

Vishay Siliconix

FEATURES

D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D New Low Thermal Resistance Package
D PWM Optimized for Fast Switching

APPLICATIONS

D Isolated DC/DC Converters

- Primary-Side Switch

SDG

Top View

SUM27N20-78

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current (TJ = 175_C)

Pulsed Drain Current I
Avalanche Current I
Repetitive Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TC = 25_C

TC = 125_C

L = 0.1 mH E

TC = 25_C

TA = 25_C

c

P

I

DM
AR

DS
GS

D

AR

D

stg

200

"20

27

15.5
60
18

16.2 mJ

150

3.75

-55 to 175 _C

THERMAL RESISTANCE RATINGS

V

A

b

W

Parameter Symbol Limit Unit

Junction-to-Ambient PCB Mount (TO-263)
Junction-to-Case (Drain) R

Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).

Document Number: 72108
S-31511—Rev. B, 14-Jul-03

c

R

thJA
thJC

40

1.0

_C/W

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1

SUM27N20-78

V

g

DSS

m

DS

,

GS

,

D

VDD = 100 V, RL = 5 W

F

, m

Vishay Siliconix

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Drain-Source Breakdown V oltage V
Gate-Threshold Voltage V

Gate-Body Leakage I

(BR)DSS

GS(th)

GSS

VDS = 0 V, I

VDS = VGS, I

= 250 mA 200

D

= 250 mA 2 4

D

VDS = 0 V, VGS = "20 V

"100 nA

VDS = 160 V, VGS = 0 V 1

Zero Gate Voltage Drain Current I

DSS

VDS = 160 V, VGS = 0 V, TJ = 125_C 50
VDS = 160 V, VGS = 0 V, TJ = 175_C 250

On-State Drain Current

a

I

D(on)

VDS w 15 V, VGS = 10 V 60 A

VGS = 10 V, ID = 20 A 0.064 0.078

Drain-Source On-State Resistance

a

r

DS(on)

VGS = 10 V, ID = 20 A, TJ = 125_C 0.160

VGS = 10 V, ID = 20 A, TJ = 175_C 0.205
Drain-Source on State Resistance VGS = 6 V, ID = 15 A 0.068 0.083 W
Forward Transconductance

Dynamic

b

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Gate Resistance R
Turn-On Delay Time

Rise Time

c

Turn-Off Delay Time

c

Fall Time

Source-Drain Diode Ratings and Characteristics (TC = 25_C)

a

c

c

c

c

c

Q
Q

t

d(on)

t

d(off)

g

fs

iss

oss

rss

Q

g
gs
gd

G

VDS = 15 V, ID = 30 A 15 S

2150

VGS = 0 V, VDS = 25 V, f = 1 MHz

215 pF

90
40 60

V

= 100 V, VGS = 10 V, ID = 20 A

DS

11
14

2 W

15 25

t

r

t

f

VDD = 100 V, RL = 5 W

ID ^ 20 A, V

GEN

= 10 V, RG = 2.5 W

35 55
40 60
30 45

b

mA

W

nC

ns

Continuous Current I
Pulsed Current I
Forward Voltage

a

Reverse Recovery Time t
Peak Reverse Recovery Current I

RM(REC)

Reverse Recovery Charge Q

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

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2

S

SM

V

SD

rr

IF = 20 A, V

IF = 50 A, di/dt = 100 A/ms

rr

GS

= 0 V

1.0 1.5 V

115 170 ns

7.5 12 A

0.43 1.02 mC

27
60

A

Document Number: 72108

S-31511—Rev. B, 14-Jul-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

60

VGS = 10 thru 7 V

50

Output Characteristics Transfer Characteristics

6 V

SUM27N20-78

Vishay Siliconix

60

50

40

30

- Drain Current (A)I
20

D

10

0

012345678910

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

5 V

3 V, 4 V

40

30

- Drain Current (A)I
20

D

10

0

01234567

TC = 125_C

25_C

-55_C

Transconductance On-Resistance vs. Drain Current

80

60

40

- Transconductance (S)g

20

fs

TC = -55_C

25_C

125_C

W )

- On-Resistance (r

DS(on)

0.16

0.12

0.08

0.04

VGS = 6 V

VGS = 10 V

0

0 102030405060

3000

2500

2000

1500

1000

C - Capacitance (pF)

C

500

0

Document Number: 72108
S-31511—Rev. B, 14-Jul-03

rss

0 40 80 120 160 200

V

DS

0.00
0 102030405060

ID - Drain Current (A)

Capacitance Gate Charge

C

iss

C

oss

- Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

GS

V

20

VDS = 100 V

16

I

= 20 A

D

12

8

4

0

0 102030405060

- Drain Current (A)

I

D

Qg - Total Gate Charge (nC)

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3

SUM27N20-78

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

3.0
V

= 10 V

GS

I

= 20 A

D

2.5

W)

2.0

1.5

(Normalized)

- On-Resistance (r

DS(on)

1.0

0.5

- Source Current (A)I

S

100

T

= 150_C

10

J

T

J

= 25_C

0.0

-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)

1000

100

(a)I

10

Dav

1

0.1

0.00001 0.001 0.1 1

Avalanche Current vs. Time

IAV (A) @ T

IAV (A) @ T

0.0001

= 150_C

A

= 25_C

A

0.01

1

0

0.3 0.6 0.9 1.2

Drain Source Breakdown vs.

Junction Temperature

260

240

(V)V

220

(BR)DSS

200

180

ID = 1.0 mA

-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)tin (Sec)

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Document Number: 72108

S-31511—Rev. B, 14-Jul-03

THERMAL RATINGS

SUM27N20-78

Vishay Siliconix

Maximum Avalanche and Drain Current

30

vs. Case Temperature

25

20

15

- Drain Current (A)I

10

D

5

0

0 25 50 75 100 125 150 175

TC - Ambient Temperature (_C)

2

1

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Case

100

Limited by r

10

- Drain Current (A)I

1

D

0.1

0.1 1 10 1000

Safe Operating Area

DS(on)

TC = 25_C

Single Pulse

100

VDS - Drain-to-Source Voltage (V)

10 ms

100 ms

1 ms
10 ms

100 ms, dc

0.2

0.1

Thermal Impedance

Normalized Effective Transient

0.01

Single Pulse

-4

10

0.02

0.05

0.1

-3

10

Square Wave Pulse Duration (sec)

-2

10

-1

10

1

Document Number: 72108
S-31511—Rev. B, 14-Jul-03

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Revision: 18-Jul-08 1