Datasheet sum23n15-73 Datasheet

N-Channel 150-V (D-S) 175_C MOSFET

Conti

t (TJ = 175_C)

I

A

PRODUCT SUMMARY

V

(BR)DSS

(V) r

150

TO-263

0.073 @ VGS = 10 V 23

(W) I

DS(on)

0.077 @ VGS = 6 V 22.5

G

(A)

D

D

SUM23N15-73

Vishay Siliconix

FEATURES

D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
D PWM Optimized

APPLICATIONS

D Primary Side Switch

SDG

Top View

Ordering Information: SUM23N15-73

SUM23N15-73

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V
Gate-Source Voltage V

=

nuous Drain Curren

Pulsed Drain Current I
Avalanche Current I
Repetitive Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TC = 25_C

TC = 125_C

L = 0.1 mH E

TC = 25_C

TA = 25_C

c

P

DS
GS

D

DM
AR

AR

D

stg

150

"20

23

13.4
35
25
31 mJ

100

3.75

-55 to 175 _C

V

b

W

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain) R

Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).

Document Number: 72143
S-03535—Rev. A, 24-Mar-03

c

R

thJA
thJC

40

1.5

_C/W

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1

SUM23N15-73

V

g

DSS

m

DS

,

GS

,

D

VDD = 75 V, RL = 3.26 W

Vishay Siliconix

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Drain-Source Breakdown V oltage V
Gate-Threshold Voltage V

Gate-Body Leakage I

(BR)DSS

GS(th)

GSS

VDS = 0 V, I

VDS = VGS, I

VDS = 0 V, VGS = "20 V "100 nA

VDS = 120 V, VGS = 0 V 1

Zero Gate Voltage Drain Current I

DSS

VDS = 120 V, VGS = 0 V, TJ = 125_C 50
VDS = 120 V, VGS = 0 V, TJ = 175_C 250

On-State Drain Current

a

I

D(on)

VDS w 5 V, VGS = 10 V 35 A

VGS = 10 V, ID = 15 A 0.059 0.073

Drain-Source On-State Resistance

a

r

DS(on)

VGS = 10 V, ID = 15 A, TJ = 125_C 0.140
VGS = 10 V, ID = 15 A, TJ = 175_C 0.168

VGS = 6 V, ID = 10 A 0.062 0.077

Forward Transconductance

Dynamic

b

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Gate Resistance R
Turn-On Delay Time

Rise Time

c

Turn-Off Delay Time

c

Fall Time

a

c

c

c

c

c

Q
Q

t

d(on)

t

d(off)

g

fs

iss

oss

rss

Q

g
gs
gd

G

t

r

VDS = 15 V, ID = 25 A 10 S

VGS = 0 V, VDS = 25 V, f = 1 MHz

V

= 75 V, VGS = 10 V, ID = 23 A

DS

VDD = 75 V, RL = 3.26 W

ID ^ 23 A, V

t

f

Source-Drain Diode Ratings and Characteristics (TC = 25_C)

= 250 mA 150

D

= 250 mA 2 4

D

= 10 V, RG = 2.5 W

GEN

b

1290

160 pF

70
22 35

6

7.5

4.0 W
10 15

60 90
30 43
45 70

mA

W

nC

ns

Continuous Current I
Pulsed Current I
Forward Voltage

a

Reverse Recovery Time t
Peak Reverse Recovery Current I
Reverse Recovery Charge Q

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

S

SM

V

SD

rr

RM(REC)

rr

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2

IF = 23 A, V

GS

= 0 V

IF = 23 A, di/dt = 100 A/ms

35
23

1.0 1.5 V

100 150 ns

5 8 A

0.25 0.6 mC

Document Number: 72143

S-03535—Rev. A, 24-Mar-03

A

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

35

30

25

Output Characteristics Transfer Characteristics

VGS = 10 thru 6 V

SUM23N15-73

Vishay Siliconix

35

28

20

15

- Drain Current (A)I

D

10

5

0

0 3 6 9 12 15

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Transconductance On-Resistance vs. Drain Current

50

TC = -55_C

40

30

20

- Transconductance (S)g

fs

10

5 V

4 V

25_C

125_C

- Drain Current (A)I

D

W )

- On-Resistance (r

DS(on)

21

14

TC = 125_C

7

25_C

0

0123456

0.12

0.09
VGS = 6 V

0.06
VGS = 10 V

0.03

-55_C

0

0 5 10 15 20 25 30

2000

1600

1200

800

C - Capacitance (pF)

400

0

0 30 60 90 120 150

Document Number: 72143
S-03535—Rev. A, 24-Mar-03

C

rss

V

DS

0.00

0 5 10 15 20 25 30 35

ID - Drain Current (A)

Capacitance Gate Charge

C

iss

C

oss

- Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

GS

V

20

VDS = 75 V

16

I

= 23 A

D

12

8

4

0

0 8 16 24 32 40

- Drain Current (A)

I

D

Qg - Total Gate Charge (nC)

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3

SUM23N15-73

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

2.7
V

= 10 V

2.4

2.1

W)

1.8

1.5

1.2

(Normalized)

- On-Resistance (r

0.9

0.6

DS(on)

0.3

0.0

GS

I

= 15 A

D

-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)

- Source Current (A)I

S

100

T

= 150_C

10

1

0

J

0.3 0.6 0.9 1.5

T

J

= 25_C

1.2

Drain Source Breakdown vs.

Junction Temperature

190

180

(V)V

170

(BR)DSS

160

150

140

ID = 1.0 mA

-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)

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Document Number: 72143

S-03535—Rev. A, 24-Mar-03

THERMAL RATINGS

SUM23N15-73

Vishay Siliconix

Maximum Avalanche and Drain Current

25

vs. Case Temperature

20

15

10

- Drain Current (A)I

D

5

0

0 25 50 75 100 125 150 175

TC - Ambient Temperature (_C)

2

1

Duty Cycle = 0.5

0.2

Normalized Thermal Transient Impedance, Junction-to-Case

100

10

- Drain Current (A)I

1

D

0.1

0.1 1 10 1000

Safe Operating Area

Limited

by r

DS(on)

TC = 25_C

Single Pulse

100

VDS - Drain-to-Source Voltage (V)

10 ms
100 ms

1 ms

10 ms
100 ms

dc

0.1

0.1

Thermal Impedance

Normalized Effective Transient

Single Pulse

0.01

-4

10

0.02

0.05

-3

10

-2

10

Square Wave Pulse Duration (sec)

10

-1

1

10

Document Number: 72143
S-03535—Rev. A, 24-Mar-03

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Revision: 18-Jul-08 1