Datasheet sum18n25-165 Datasheet

SUM18N25-165

T

N-Channel 250-V (D-S) 175 °C MOSFET

Vishay Siliconix

PRODUCT SUMMARY

V

(V)

(BR)DSS

250

Ordering Information:

r

DS(on)

0.165 at V

TO-263

SDG

Top View

SUM18N25-165-E3 (Lead (Pb)-free)

(Ω)

GS

= 10 V

FEATURES

I

(A)

D

18

• TrenchFET® Power MOSFET

• 175 °C Junction Temperature

• Low Thermal Resistance Package

D

G

S

N-Channel MOSFE

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

Pulsed Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

= 25 °C

T

C

= 125 °C

T

C

L = 0.1 mH

TC = 25 °C

T

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

AS

E

AS

P

c

D

, T

T

J

stg

250

± 20

18

10.4

20

5

1.25 mJ

b

150

3.75

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient

Junction-to-Case (Drain)

Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material).

PCB Mount (TO-263)

c

R

thJA

R

thJC

40

1.0

°C/W

Document Number: 72849 S-80272-Rev. B, 11-Feb-08

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1

SUM18N25-165

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

c

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

c

Turn-Off Delay Time

Fall Time

c

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

R

g

t

d(on)

t

r

t

d(off)

t

f

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Charge

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

VDS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 250 V, V

DS

V

= 250 V, V

DS

V

= 250 V, V

DS

≥ 15 V, V

DS

V

= 10 V, ID = 14 A

GS

V

= 10 V, ID = 14 A, TJ = 125 °C

GS

V

= 10 V, ID = 14 A, TJ = 175 °C

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

VDS = 15 V, ID = 18 A

VGS = 0 V, V

VDS = 125 V, V

V

DD

≅ 18 A, V

I

D

b

IF = 18 A, V

= 25 V, f = 1 MHz

DS

= 10 V, ID = 18 A

GS

= 125 V, RL = 7.0 Ω

= 10 V, Rg = 2.5 Ω

GEN

GS

IF = 18 A, di/dt = 100 A/µs

= 0 V

= 10 V

= 0 V

250

2.5 4

± 100 nA

1

50

250

20 A

0.130 0.165

0.347

0.462

36 S

1950

160

70

30 45

10

1.6 Ω

15 25

130 195

30 45

100 150

18

20

1.0 1.5 V

115 175 ns

10 15 A

0.58 1.3 µC

V

µA

Ω

pFOutput Capacitance

nC

ns

A

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 72849

S-80272-Rev. B, 11-Feb-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUM18N25-165

Vishay Siliconix

20

16

12

8

- Drain Current (A)I

D

4

0

048121620

VGS = 10 thru 6 V

VDS - Drain-to-Source Voltage (V)

Output Characteristics

60

TC = - 55 °C

50

40

30

20

- Transconductance (S)g

fs

10

25 °C

125 °C

5 V

4 V

- Drain Current (A)I

D

- On-Resistance (Ω)

DS(on)

r

20

16

12

8

TC = 125 °C

4

0

0123456

VGS - Gate-to-Source Voltage (V)

25 °C

- 55 °C

Transfer Characteristics

0.32

0.28

0.24

0.20

0.16

0.12

0.08

0.04

VGS = 10 V

0

048121620

2800

2100

1400

C - Capacitance (pF)

700

C

rss

0

0 40 80 120 160 200

Document Number: 72849 S-80272-Rev. B, 11-Feb-08

- Drain Current (A)

I

D

Transconductance

C

iss

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

0.00

20

16

12

- Gate-to-Source Voltage (V)

GS

V

048121620

I

- Drain Current (A)

D

On-Resistance vs. Drain Current

VDS = 125 V I

= 17 A

D

8

4

0

0 8 16 24 32 40 48 56

Qg - Total Gate Charge (nC)

Gate Charge

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SUM18N25-165

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.8

V

= 10 V

GS

= 18 A

I

D

2.4

2.0

1.6

- On-Resistance (Normalized)

1.2

DS(on)

r

0.8

0.4

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

100

10

(A)I

1

Dav

IAV (A) at T

= 25 °C

A

- Source Current (A)I

S

(V)V

(BR)DSS

100

325

310

295

280

T

= 150 °C

J

10

T

= 25 °C

J

1

0

0.3 0.6 0.9 1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

ID = 10 mA

0.1

0.01

0.000001 0.0001 0.01 0.1

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0.00001

= 150 °C

A

tin (s)

IAV (A) at T

Avalanche Current vs. Time

0.001

265

250

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown vs.

Junction Temperature

Document Number: 72849

S-80272-Rev. B, 11-Feb-08

THERMAL RATINGS

SUM18N25-165

Vishay Siliconix

20

16

12

8

- Drain Current (A)I

D

4

0

0 25 50 75 100 125 150 175

TC - Case Temperature (°C)

Maximum Drain Current vs. Case Temperature

2

1

Duty Cycle = 0.5

0.2

0.1

100

Limited by r

10

1

- Drain Current (A)I

D

0.1

0.1 1 10 1000

* V

GS

*

DS(on)

TC = 25 °C

Single Pulse

- Drain-to-Source Voltage (V)

V

DS

minimum VGS at which r

DS(on)

Safe Operating Area

10 µs

100 µs

1 ms

10 ms

100 ms, DC

100

is specified

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-

10

0.05

Single Pulse

4

0.02

-

3

10

Square Wave Pulse Duration (s)

-

2

10

Normalized Thermal Transient Impedance, Junction-to-Case

-

1

10

1

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72849.

Document Number: 72849

www.vishay.com

S-80272-Rev. B, 11-Feb-08

5

DETAIL A (ROTATED 90°)

SECTION A-A

-A-

-B-

0° - 5°

D1

A

L1

L4

e

b2

b

E

A

c2

c

L2

D

L3

L

M

c1

c

b1

b

Detail “A”

E1

E2

K

E3

D2

D3

6

0.010 M A

M

2 PL

Package Information

Vishay Siliconix

TO-263 (D2PAK): 3-LEAD

INCHES MILLIMETERS

DIM. MIN. MAX. MIN. MAX.

A 0.160 0.190 4.064 4.826

b 0.020 0.039 0.508 0.990

b1 0.020 0.035 0.508 0.889

b2 0.045 0.055 1.143 1.397

Thin lead 0.013 0.018 0.330 0.457

c*

Thick lead 0.023 0.028 0.584 0.711

Thin lead 0.013 0.017 0.330 0.431

c1

Thick lead 0.023 0.027 0.584 0.685

c2 0.045 0.055 1.143 1.397

D 0.340 0.380 8.636 9.652

D1 0.220 0.240 5.588 6.096

D2 0.038 0.042 0.965 1.067

D3 0.045 0.055 1.143 1.397

E 0.380 0.410 9.652 10.414

E1 0.245 - 6.223 -

E2 0.355 0.375 9.017 9.525

E3 0.072 0.078 1.829 1.981

e 0.100 BSC 2.54 BSC

K 0.045 0.055 1.143 1.397

L 0.575 0.625 14.605 15.875

L1 0.090 0.110 2.286 2.794

L2 0.040 0.055 1.016 1.397

L3 0.050 0.070 1.270 1.778

L4 0.010 BSC 0.254 BSC

M - 0.002 - 0.050

ECN: T10-0738-Rev. J, 03-Jan-11 DWG: 5843

Notes

1. Plane B includes maximum features of heat sink tab and plastic.

2. No more than 25 % of L1 can fall above seating plane by max. 8 mils.

3. Pin-to-pin coplanarity max. 4 mils.

4. *: Thin lead is for SUB, SYB.

Thick lead is for SUM, SYM, SQM.

5. Use inches as the primary measurement.

6. This feature is for thick lead.

Document Number: 71198 www.vishay.com Revison: 03-Jan-11

1

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635 (16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397 11-Apr-05

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1