Datasheet sum110p08 Datasheet

New Product

P-Channel 80-V (D-S) MOSFET

SUM110P08-11L

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 80

0.0112 at V

0.0145 at V

TO-263

Top View

Ordering Information: SUM110P08-11L-E3 (Lead (Pb)-free)

DS(on)

SGD

(Ω)

= - 10 V

GS

= - 4.5 V

GS

Drain Connected to Tab

I

(A)

D

- 110

- 109

b

Qg (Typ)

85 nC

FEATURES

• TrenchFET® Power MOSFET

RoHS

COMPLIANT

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

= 25 °C

T

C

T

= 125 °C

C

T

= 25 °C

A

TA = 125 °C

= 25 °C

T

C

T

= 25 °C

A

L = 0.1 mH

= 25 °C

T

C

T

= 125 °C

C

T

= 25 °C

A

TA = 125 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

, T

T

J

stg

- 80

± 20

a

- 110

- 71

b, c

- 23.5

b, c

13.6

- 120

- 110

b, c

- 9

- 75

281 mJ

375

125

13.6

4.5

b, c

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain) Steady State

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is °C/W.

Document Number: 73471 S-72194-Rev. B, 22-Oct-07

b, d

t ≤ 10 s

R

thJA

thJC

811

0.33 0.4

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°C/W

1

New Product

SUM110P08-11L

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

VGS = 0 V, ID = - 250 µA

ID = - 1 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= - 80 V, V

DS

= - 80 V, V

V

GS

≥ 10 V, V

DS

= - 10 V, ID = - 20 A

GS

= - 4.5 V, ID = - 15 A

GS

= 0 V

GS

= 0 V, TJ = 175 °C

= - 10 V

GS

VDS = - 15 V, ID = - 20 A

VDS = - 40 V, V

V

= - 40 V, V

DS

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 110 A

GS

= - 4.5 V, ID = - 110 A

GS

f = 1 MHz 3.6 Ω

V

= - 40 V, RL = 0.36 Ω

DD

≅ - 110 A, V

I

D

= - 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 20 A

IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C

- 80 V

- 85

- 5.5

mV/°C

- 1 - 3 V

± 100 nA

- 1

- 500

- 120 A

0.0093 0.0112

0.012 0.0145

85 S

10850

800

700

180 270

85 130

35

42

20 30

330 500

135 205

550 825

- 110

- 120

- 0.8 - 1.5 V

65 100 ns

135 205 nC

43

22

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 73471

S-72194-Rev. B, 22-Oct-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUM110P08-11L

Vishay Siliconix

- (A)

D

I

- on (Ω)

DS

R

200

VGS = 10 V thru 6 V

160

5 V

120

80

40

0

0 1 2

- (V)

V

DS

4 V

Output Characteristics

0.025

0.020

VGS = 4.5 V

0.015

0.010

VGS = 10 V

0.005

- (A)

D

I

15000

12000

9000

- (pF)

AP

6000

C

3000

40

30

20

10

TC = 125 °C

0

01234

VGS - (V)

25 °C

- 55 °C

Transfer Characteristics

C

iss

C

oss

C

rss

0.000 0 20406080100120

On-Resistance vs. Drain Current

10

8

6

- (V)

GS

V

4

2

0

0 40 80 120 160 200 240

Document Number: 73471 S-72194-Rev. B, 22-Oct-07

VDS = 40 V

Gate Charge

- (A)

I

D

Qg - (nC)

VDS = 64 V

0

0 20406080

VDS - (V)

Capacitance

2.3

VGS = 10 V

ID = 20 A

- 50 - 25 0 25 50 75 100 125 150 175

- (°C)

T

J

- (normalized)

DS(on)

r

2.0

1.7

1.4

1.1

0.8

0.5

On-Resistance vs. Junction Temperature

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3

New Product

SUM110P08-11L

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Variance (V)

GS(th)

V

100

TJ = 150 °C

10

- (A)

S

I

1

0 0.3 0.6 0.9 1.2

- (V)

V

SD

Source-Drain Diode Forward Voltage

1.0

0.8

0.6

0.4 ID = 1mA

0.2

0.0

25 °C

- on (Ω)

DS

R

Power (W)

0.06

0.05

ID = 20 A

0.04

0.03

150 °C

0.02

0.01 25 °C

0

0246810

VGS - (V)

On-Resistance vs. Gate-to-Source Voltage

6000

5000

4000

3000

2000

Power (W)

- 0.2

- 0.4

- 50 - 25 0 25 50 75 100 125 150 175

T

- (°C)

J

Threshold Voltage

400

350

300

250

200

150

100

50

0

25 50 75 100 125 150 175

T

C

Power Derating, Junction-to-Case

1000

0

0.0001 0.001 0.01 0.10 1

Time (s)

Single Pulse Power, Junction-to-Case (T

1000.0

Limited by r

100.0

10.0

(A)

D

I

1.0

0.1

0.1 1.0 10.0

* V

GS

DS(on)*

Single Pulse Tc = 25 °C

VDS - Drain-to-Source Voltage (V)

> minimum VGS at which r

DS(on)

Safe Operating Area

C

10 µs

100 µs

10 ms

100 ms, DC

is specified

= 25 °C)

1 ms

100.0

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Document Number: 73471

S-72194-Rev. B, 22-Oct-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

120

Package Limited

90

- (A)

D

I

60

av - (A)

D

I

SUM110P08-11L

Vishay Siliconix

1000.0

100.0

10.0

30

0

0 25 50 75 100 125 150 175

TC - (°C)

Max Avalanche and Drain Current

vs. Case Temperature

1.00

0.5

0.2

0.1

0.10

Single

Normalized Effective Transient Thermal Impedance

0.01

0.05

0.02

0.001

Normalized Thermal Transient Impedance, Junction-to-Case

0.01

1.0

0.1

0.00001 0.0001 0.001 0.01 0.1 1.0

tin - (s)

Avalanche Current vs. Time

0.1

10.0001

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73471.

Document Number: 73471

www.vishay.com

S-72194-Rev. B, 22-Oct-07

5

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

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Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1