Datasheet sum110p06-07l Datasheet

SUM110P06-07L

P-Channel 60-V (D-S) 175 °C MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 60

DS(on)

0.0069 at V

0.0088 at V

GS

(Ω)

= - 10 V

= - 4.5 V

I

(A)

D

- 110

d

FEATURES

• TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

S

Available

RoHS*

COMPLIANT

TO-263

G

SDG

Top View

D

Ordering Information: SUM110P06-07L

SUM110P06-07L-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

d

(TJ = 175 °C)

Pulsed Drain Current

Avalanche Current

Single Pulse Avalanche Energy

a

Power Dissipation

Operating Junction and Storage Temperature Range

T

= 25 °C

C

= 125 °C

T

C

L = 0.1 mH

= 25 °C

T

C

T

= 25 °C

A

b

V

DS

V

GS

I

D

I

DM

I

AS

E

AS

P

D

T

, T

J

stg

- 60

± 20

- 110

- 95

- 240

- 75

281 mJ

c

375

3.75

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Unit

Junction-to-Ambient PCB Mount

Junction-to-Case

Notes: a. Duty cycle ≤ 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72439 S-80274-Rev. C, 11-Feb-08

b

R

thJA

R

thJC

40

0.4

°C/W

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1

SUM110P06-07L

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

c

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

c

Turn-Off Delay Time

Fall Ti me

c

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

R

g

t

d(on)

t

r

t

d(off)

t

f

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Charge

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

VGS = 0 V, ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= - 60 V, V

DS

V

= - 60 V, V

DS

V

= - 60 V, V

DS

= - 5 V, V

DS

V

= - 10 V, ID = - 30 A

GS

V

= - 10 V, ID = - 30 A, TJ = 125 °C

GS

V

= - 10 V, ID = - 30 A, TJ = 175 °C

GS

V

= - 4.5 V, ID = - 20 A

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

= - 10 V

GS

VDS = - 15 V, ID = - 50 A

VGS = 0 V, V

VDS = - 30 V, V

= - 25 V, f = 1 MHz

DS

= - 10 V, ID = - 110 A

GS

f = 1.0 MHz 3 Ω

V

= - 30 V, RL = 0.27 Ω

DD

≅ - 110 A, V

I

D

b

IF = - 85 A, V

= - 10 V, Rg = 2.5 Ω

GEN

GS

IF = - 85 A, di/dt = 100 A/µs

= 0 V

- 60

- 1 - 3

± 100 nA

- 1

- 50

- 250

- 120 A

0.0055 0.0069

0.0115

0.0138

0.007 0.0088

20 S

11400

1200

900

230 345

50

60

20 30

160 240

200 300

240 360

- 110

- 240

- 1.0 -1.5 V

65 100 ns

- 4.2 - 6.3 A

0.14 0.32 µC

V

µA

Ω

pFOutput Capacitance

nC

ns

A

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 72439

S-80274-Rev. C, 11-Feb-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

200

VGS = 10 thru 5 V

160

4 V

120

SUM110P06-07L

Vishay Siliconix

200

160

120

80

- Drain Current (A)

D

I

40

0

0246810

VDS - Drain-to-Source Voltage (V)

Output Characteristics

250

TC = - 55 °C

200

150

100

- Transconductance (S)

fs

g

50

0

0 153045607590

ID - Drain Current (A)

Transconductance

3 V

25 °C

125 °C

80

Drain Current (A)

-

D

I

40

0

012345

0.016

0.014

0.012

0.010

0.008

- On-Resistance (Ω)

0.006

0.004

DS(on)

r

0.002

0.000 0 20 40 60 80 100 120

TC = 125 °C

25 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

VGS = 4.5 V

VGS = 10 V

I

- Drain Current (A)

D

On-Resistance vs. Drain Current

14000

12000

10000

8000

6000

- Capacitance (pF) C

4000

2000

0

C

oss

0 102030405060

Document Number: 72439 S-80274-Rev. C, 11-Feb-08

C

iss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

- Gate-to-Source Voltage (V)

GS

V

20

VDS = 30 V

16

I

= 110 A

D

12

8

4

0

0 50 100 150 200 250 300 350 400 450

Qg - Total Gate Charge (nC)

Gate Charge

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SUM110P06-07L

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.0

1.7

1.4

- On-Resistance

1.1

(Normalized)

DS(on)

r

0.8

0.5

- 50 - 25 0 25 50 75 100 125 150 175

1000

100

(A)I

10

Dav

V

= 10 V

GS

I

= 30 A

D

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

IAV (A) at T

= 25 °C

A

- Source Current (A)I

S

100

T

= 150 °C

J

10

1

0.0 0.3 0.6 0.9 1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

75

ID = 250 µA

(V)V

(BR)DSS

72

69

66

T

J

= 25 °C

1

IAV (A) at T

0.1

0.00001 0.001 0.1 1

= 150 °C

A

0.010.0001

tin (s)

Avalanche Current vs. Time

63

60

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown vs.

Junction Temperature

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Document Number: 72439

S-80274-Rev. C, 11-Feb-08

THERMAL RATINGS

SUM110P06-07L

Vishay Siliconix

200

150

100

- Drain Current (A)

D

I

50

0

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

10

Package Limited

0 25 50 75 100 125 150 175

TC - Case Temperature (°C)

Maximum Avalanche and Drain Current

vs. Case Temperature

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-4

-3

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

1000

Limited by r

(

DS on)

*

10 µs

100

10

- Drain Current (A)I

D

1

TC = 25 °C

Single Pulse

100 µs

1 ms 10 ms

100 ms, DC

0.1

0.1 1 10 100

VDS - Drain-to-Source Voltage (V) minimum VGS at which r

* V

GS

DS(on)

is specified

Safe Operating Area

Notes:

P

DM

t

1

t

2

t

thJA

1

t

2

(t)

= 62.5 °C/W

1

1. Duty Cycle, D =

2. Per Unit Base = R

- TA = PDMZ

3. T

JM

4. Surface Mounted

-2

10

-1

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72439.

Document Number: 72439

www.vishay.com

S-80274-Rev. C, 11-Feb-08

5

DETAIL A (ROTATED 90°)

SECTION A-A

-A-

-B-

0° - 5°

D1

A

L1

L4

e

b2

b

E

A

c2

c

L2

D

L3

L

M

c1

c

b1

b

Detail “A”

E1

E2

K

E3

D2

D3

6

0.010 M A

M

2 PL

Package Information

Vishay Siliconix

TO-263 (D2PAK): 3-LEAD

INCHES MILLIMETERS

DIM. MIN. MAX. MIN. MAX.

A 0.160 0.190 4.064 4.826

b 0.020 0.039 0.508 0.990

b1 0.020 0.035 0.508 0.889

b2 0.045 0.055 1.143 1.397

Thin lead 0.013 0.018 0.330 0.457

c*

Thick lead 0.023 0.028 0.584 0.711

Thin lead 0.013 0.017 0.330 0.431

c1

Thick lead 0.023 0.027 0.584 0.685

c2 0.045 0.055 1.143 1.397

D 0.340 0.380 8.636 9.652

D1 0.220 0.240 5.588 6.096

D2 0.038 0.042 0.965 1.067

D3 0.045 0.055 1.143 1.397

E 0.380 0.410 9.652 10.414

E1 0.245 - 6.223 -

E2 0.355 0.375 9.017 9.525

E3 0.072 0.078 1.829 1.981

e 0.100 BSC 2.54 BSC

K 0.045 0.055 1.143 1.397

L 0.575 0.625 14.605 15.875

L1 0.090 0.110 2.286 2.794

L2 0.040 0.055 1.016 1.397

L3 0.050 0.070 1.270 1.778

L4 0.010 BSC 0.254 BSC

M - 0.002 - 0.050

ECN: T10-0738-Rev. J, 03-Jan-11 DWG: 5843

Notes

1. Plane B includes maximum features of heat sink tab and plastic.

2. No more than 25 % of L1 can fall above seating plane by max. 8 mils.

3. Pin-to-pin coplanarity max. 4 mils.

4. *: Thin lead is for SUB, SYB.

Thick lead is for SUM, SYM, SQM.

5. Use inches as the primary measurement.

6. This feature is for thick lead.

Document Number: 71198 www.vishay.com Revison: 03-Jan-11

1

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635 (16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397 11-Apr-05

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Disclaimer

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Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1