Datasheet sum110p04-05 Datasheet

P-Channel 40-V (D-S) MOSFET

SUM110P04-05

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 40

0.005 at V

DS(on)

(Ω)

= - 10 V

GS

a

I

(A)

D

Qg (Typ.)

- 110 185 nC

FEATURES

• TrenchFET® Power MOSFET

RoHS

COMPLIANT

TO-263

S

G

Drain Connected to Tab

SGD

Top View

Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free)

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Avalanche Current

Single-Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

T

= 70 °C

C

TA = 25 °C

TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

- 40

± 20

a

- 110

a

- 110

b, c

39

b, c

33

240

110

b, c

10

75

281 mJ

V

A

375

P

D

, T

T

J

stg

262

b, c

15

b, c

10.5

- 55 to 175

260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain) Steady State

Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.

Document Number: 73493
S-80274-Rev. B, 11-Feb-08

b, d

t ≤ 10 s

R

thJA

R

thJC

810

0.33 0.4

°C/W

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1

SUM110P04-05

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

V

DS

= - 40 V, V

DS

= - 40 V, V

V

GS

≥ 5 V, V

DS

= - 10 V, ID = - 20 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 15 V, ID = - 20 A

VDS = - 25 V, V

VDS = - 20 V, V

= 0 V, f = 1 MHz

GS

= - 10 V, ID = - 110 A

GS

f = 1 MHz 4.0 Ω

V

= - 20 V, RL = 0.18 Ω

DD

≅ - 110 A, V

I

D

= - 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 20 A

IF = - 20 A, di/dt = 100 A/µs, TJ = 25 °C

- 40 V

- 40

- 5.5

mV/°C

- 2 - 3 - 4 V

± 100 nA

- 1

- 10

- 120 A

0.0041 0.005 Ω

75 S

11300

1510

1000

185 280

48

nCGate-Source Charge

42

25 40

290 440

110 165

35 55

- 110

- 240

- 0.8 - 1.5 V

70 105 ns

130 200 nC

37

33

µA

pFOutput Capacitance

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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2

Document Number: 73493

S-80274-Rev. B, 11-Feb-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUM110P04-05

Vishay Siliconix

- Drain Current (A)I

D

- On-Resistance (Ω)

DS(on)

r

200

VGS = 10 thru 7 V

160

120

80

40

0

0.0 0.5 1.0 1.5 2.0

V

- Drain-to-Source Voltage (V)

DS

6 V

5 V

4 V

Output Characteristics

0.010

0.008

0.006

VGS = 10 V

0.004

0.002

0.000
0 20406080100120

- Drain Current (A)

I

D

On-Resistance vs. Drain Current

40

30

20

- Drain Current (A)I

D

10

0

0123456

16000

14000

12000

10000

8000

6000

C - Capacitance (pF)

4000

2000

C

rss

0

0 10203040

25 °C

TC = 125 °C

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

C

iss

C

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

- 55 °C

10

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 40 80 120 160 200 240

Document Number: 73493
S-80274-Rev. B, 11-Feb-08

VDS = 20 V

VDS = 32 V

Qg - Total Gate Charge (nC)

Gate Charge

1.8

ID = 20 A

V

= 10 V

1.5

1.2

- On-Resistance
(Normalized)

DS(on)

r

0.9

0.6

GS

- 50 - 25 0 25 50 75 100 125 150 175

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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SUM110P04-05

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Variance (V)

V

100

TJ = 150 °C

10

- Source Current (A)I

S

1

0.0 0.3 0.6 0.9 1.2 1.5

- Source-to-Drain Voltage (V)

V

SD

TJ = 25 °C

Source-Drain Diode Forward Voltage

1.1

0.9

0.7

0.5

0.3

0.1

GS(th)

- 0.1

ID =10 mA

- Drain-to-Source On-Resistance (Ω)

DS(on)

r

Power (W)

0.05

0.04

0.03

0.02

0.01

T

= 25 °C

A

0.00
012345678910

VGS - Gate-to-Source Voltage (V)

TA = 150 °C

On-Resistance vs. Gate-to-Source Voltage

35

30

25

20

15

T

= 25 °C

10

C

- 0.3

- 0.5

- 50 - 25 0 25 50 75 100 125 150 175

- Temperature (°C)

T

J

Threshold Voltage

1000

Limited by r

100

- Drain Current (A)I

10

D

1

0.1

*V

GS

Safe Operating Area, Junction-to-Case

*

DS(on)

Single Pulse

= 25 °C

T

C

110

V

- Drain-to-Source Voltage (V)

DS

> minimum VGS at which r

DS(on)

5

0

0.1 10000.010.0010.0001

Time (s)

Single Pulse Power, Junction-to-Ambient

10 µs

100 µs

1 ms

10 ms
100 ms
DC

100

is specified

1001.00 10

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4

Document Number: 73493

S-80274-Rev. B, 11-Feb-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUM110P04-05

Vishay Siliconix

240

210

180

150

120

90

- Drain Current (A)

D

I

60

30

0

Package Limited

0 25 50 75 100 125 150 175

TC - Case Temperature (°C)

Max. Avalanche and Drain Current

vs. Case Temperature*

1

0.5

0.2

0.1

Power (W)

400

350

300

250

200

150

100

50

0

25 50 75 100 125 150 175

TC - Case Temperature (°C)

Power Derating, Junction-to-Case

0.1

Thermal Impedance

Normalized Effective Transient

0.01

0.05

0.02

Single Pulse

0.001 0.01 10.10.0001
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

* The power dissipation PD is based on T

= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73493.

Document Number: 73493

www.vishay.com

S-80274-Rev. B, 11-Feb-08

5

DETAIL A (ROTATED 90°)

SECTION A-A

-A-

-B-

0° - 5°

D1

A

A

L1

L4

e

b2

b

E

A

c2

c

L2

D

L3

L

M

c1

c

b1

b

Detail “A”

E1

E2

K

E3

D2

D3

6

0.010 M A

M

2 PL

Package Information

Vishay Siliconix

TO-263 (D2PAK): 3-LEAD

INCHES MILLIMETERS

DIM. MIN. MAX. MIN. MAX.

A 0.160 0.190 4.064 4.826

b 0.020 0.039 0.508 0.990

b1 0.020 0.035 0.508 0.889

b2 0.045 0.055 1.143 1.397

Thin lead 0.013 0.018 0.330 0.457

c*

Thick lead 0.023 0.028 0.584 0.711

Thin lead 0.013 0.017 0.330 0.431

c1

Thick lead 0.023 0.027 0.584 0.685

c2 0.045 0.055 1.143 1.397

D 0.340 0.380 8.636 9.652

D1 0.220 0.240 5.588 6.096

D2 0.038 0.042 0.965 1.067

D3 0.045 0.055 1.143 1.397

E 0.380 0.410 9.652 10.414

E1 0.245 - 6.223 -

E2 0.355 0.375 9.017 9.525

E3 0.072 0.078 1.829 1.981

e 0.100 BSC 2.54 BSC

K 0.045 0.055 1.143 1.397

L 0.575 0.625 14.605 15.875

L1 0.090 0.110 2.286 2.794

L2 0.040 0.055 1.016 1.397

L3 0.050 0.070 1.270 1.778

L4 0.010 BSC 0.254 BSC

M - 0.002 - 0.050

ECN: T10-0738-Rev. J, 03-Jan-11
DWG: 5843

Notes

1. Plane B includes maximum features of heat sink tab and plastic.

2. No more than 25 % of L1 can fall above seating plane by max.
8 mils.

3. Pin-to-pin coplanarity max. 4 mils.

4. *: Thin lead is for SUB, SYB.

Thick lead is for SUM, SYM, SQM.

5. Use inches as the primary measurement.

6. This feature is for thick lead.

Document Number: 71198 www.vishay.com
Revison: 03-Jan-11

1

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635
(16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397
11-Apr-05

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Revision: 11-Mar-11 1