Datasheet sum110n05-06l Datasheet

SUM110N05-06L

N-Channel 55-V (D-S), 175 °C MOSFET

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

(BR)DSS

55

Ordering Information: SUM110N05-06L

DS(on)

0.006 at V

0.0085 at V

(Ω)I

GS

SUM110N05-06L-E3 (Lead (Pb)-free)

= 10 V

= 4.5 V

TO-263

Top View

(A) Qg (Typ)

D

110

92

SDG

65

FEATURES

• TrenchFET® Power MOSFET

• 175 °C Junction Temperature

• Low Thermal Resistance Package

APPLICATIONS

• Industrial

D

G

S

N-Channel MOSFET

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

a

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

= 25 °C

T

C

= 125 °C

T

C

L = 0.1 mH

T

= 25 °C

C

= 25 °C

T

A

V

DS

V

GS

I

D

I

DM

I

AR

E

AR

P

c

D

T

, T

J

stg

55

± 20

110

63

240

60

180 mJ

b

158

3.7

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient

PCB Mount

Junction-to-Case

Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply.

c

R

thJA

R

thJC

40

0.95

°C/W

Document Number: 72005 S-80108-Rev. C, 21-Jan-08

www.vishay.com

1

SUM110N05-06L

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

c

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

t

d(on)

t

r

t

d(off)

t

f

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Charge

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

VDS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 55 V, V

DS

V

= 55 V, V

DS

V

= 55 V, V

DS

≥ 5 V, V

DS

V

= 10 V, ID = 30 A

GS

V

= 4.5 V, ID = 20 A

GS

V

= 10 V, ID = 30 A, TJ = 125 °C

GS

V

= 10 V, ID = 30 A, TJ = 175 °C

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

VDS = 15 V, ID = 30 A

VGS = 0 V, V

VDS = 30 V, V

V

DD

≅ 110 A, V

I

D

b

IF = 110 A, V

= 25 V, f = 1 MHz

DS

= 10 V, ID = 110 A

GS

= 30 V, RL = 0.27 Ω

= 10 V, Rg = 2.5 Ω

GEN

GS

IF = 110 A, di/dt = 100 A/µs

= 0 V

= 10 V

= 0 V

55

13

V

± 100 nA

1

50

µA

250

120 A

0.0047 0.006

0.0066 0.0085

0.0102

Ω

0.0132

30 S

3300

625

pFOutput Capacitance

310

65 100

15

nC

16

15 25

35 55

ns

15 25

110

240

A

1.0 1.5 V

70 125 ns

2.5 5 A

0.09 0.31 µC

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

www.vishay.com 2

Document Number: 72005

S-80108-Rev. C, 21-Jan-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUM110N05-06L

Vishay Siliconix

250

200

150

100

- Drain Current (A)I

D

50

0

0246810

VGS = 10 thru 5 V

4 V

2, 3 V

VDS - Drain-to-Source Voltage (V)

Output Characteristics

200

160

120

80

- Transconductance (S)g

fs

40

TC = - 55 °C

25 °C

125 °C

- Drain Current (A)I

D

Ω)

- On-Resistance (r

DS(on)

250

200

150

100

50

0

0123456

TC = 125 °C

25 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

0.015

0.012

0.009

VGS = 4.5 V

0.006

0.003

VGS = 10 V

0

0 153045607590

VGS - Gate-to-Source Voltage (V)

5000

4000

3000

2000

C - Capacitance (pF)

1000

0

0 1122334455

C

rss

VDS - Drain-to-Source Voltage (V)

Document Number: 72005 S-80108-Rev. C, 21-Jan-08

Transconductance

C

iss

C

Capacitance

oss

0.000 0 20 40 60 80 100 120

ID - Drain Current (A)

On-Resistance vs. Drain Current

20

VGS = 30 V

16

I

= 110 A

D

12

8

- Gate-to-Source Voltage (V)

GS

4

V

0

0 20 40 60 80 100 120

Qg - Total Gate Charge (nC)

Gate Charge

www.vishay.com

3

SUM110N05-06L

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.5

2.0

1.5

1.0

- On-Resistance (Normalized)

DS(on)

r

0.5

0.0

- 50 - 25 0 25 50 75 100 125 150 175

1000

100

(a)I

10

Dav

V

= 10 V

GS

= 30 A

I

D

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

IAV (A) at T

= 25 °C

J

100

T

= 150 °C

J

10

- Source Current (A)I

S

1

0.2

0.4 0.6 0.8 1.0 1.2

VSD - Source-to-Drain Voltage (V)

T

J

= 25 °C

Source-Drain Diode Forward Voltage

70

ID = 10 mA

65

60

1

IAV (A) at T

0.1

0.00001 0.0001 0.01 1

= 150 °C

J

0.001

0.1

tin (s)

Avalanche Current vs. Time

- On-Resistance (Normalized)

55

DS(on)

r

50

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

www.vishay.com 4

Document Number: 72005

S-80108-Rev. C, 21-Jan-08

THERMAL RATINGS

SUM110N05-06L

Vishay Siliconix

120

100

80

60

40

- Drain Current (A)I

D

20

0

0 25 50 75 100 125 150 175

TC - Ambient Temperature (°C)

Maximum Drain Current

vs. Case Temperature

2

1

Duty Cycle = 0.5

0.2

0.1

1000

Limited by r

100

10

- Drain Current (A)I

D

1

0.1

0.1 1 10 100

V

* V

> minimum VGS at which r

GS

*

DS(on)

TC = 25 °C

Single Pulse

- Drain-to-Source Voltage (V)

DS

DS(on)

Safe Operating Area

is specified

10 µs

100 µs

1 ms

10 ms 100 ms

DC

0.1

Thermal Impedance

Normalized Effective Transient

0.01 10

4

-

0.02

Single Pulse

0.05

-

3

10

-2

10

Square Wave Pulse Duration (s)

-

1

10

Normalized Thermal Transient Impedance, Junction-to-Case

1

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72005.

Document Number: 72005

www.vishay.com

S-80108-Rev. C, 21-Jan-08

5

DETAIL A (ROTATED 90°)

SECTION A-A

-A-

-B-

0° - 5°

D1

A

L1

L4

e

b2

b

E

A

c2

c

L2

D

L3

L

M

c1

c

b1

b

Detail “A”

E1

E2

K

E3

D2

D3

6

0.010 M A

M

2 PL

Package Information

Vishay Siliconix

TO-263 (D2PAK): 3-LEAD

INCHES MILLIMETERS

DIM. MIN. MAX. MIN. MAX.

A 0.160 0.190 4.064 4.826

b 0.020 0.039 0.508 0.990

b1 0.020 0.035 0.508 0.889

b2 0.045 0.055 1.143 1.397

Thin lead 0.013 0.018 0.330 0.457

c*

Thick lead 0.023 0.028 0.584 0.711

Thin lead 0.013 0.017 0.330 0.431

c1

Thick lead 0.023 0.027 0.584 0.685

c2 0.045 0.055 1.143 1.397

D 0.340 0.380 8.636 9.652

D1 0.220 0.240 5.588 6.096

D2 0.038 0.042 0.965 1.067

D3 0.045 0.055 1.143 1.397

E 0.380 0.410 9.652 10.414

E1 0.245 - 6.223 -

E2 0.355 0.375 9.017 9.525

E3 0.072 0.078 1.829 1.981

e 0.100 BSC 2.54 BSC

K 0.045 0.055 1.143 1.397

L 0.575 0.625 14.605 15.875

L1 0.090 0.110 2.286 2.794

L2 0.040 0.055 1.016 1.397

L3 0.050 0.070 1.270 1.778

L4 0.010 BSC 0.254 BSC

M - 0.002 - 0.050

ECN: T10-0738-Rev. J, 03-Jan-11 DWG: 5843

Notes

1. Plane B includes maximum features of heat sink tab and plastic.

2. No more than 25 % of L1 can fall above seating plane by max. 8 mils.

3. Pin-to-pin coplanarity max. 4 mils.

4. *: Thin lead is for SUB, SYB.

Thick lead is for SUM, SYM, SQM.

5. Use inches as the primary measurement.

6. This feature is for thick lead.

Document Number: 71198 www.vishay.com Revison: 03-Jan-11

1

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420

(10.668)

0.635 (16.129)

0.355

AN826

Vishay Siliconix

(9.017)

Return to Index

0.135

(3.429)

0.200

(5.080)

Recommended Minimum Pads

Dimensions in Inches/(mm)

0.050

(1.257)

0.145

(3.683)

Document Number: 73397 11-Apr-05

www.vishay.com

1

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com Revision: 11-Mar-11 1