Datasheet sum110n04-04 Datasheet

N-Channel 40-V (D-S) 175 °C MOSFET

SUM110N04-04

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

(BR)DSS

40

Ordering Information: SUM110N04-04

0.0035 at V

DS(on)

TO-263

Top View

SUM110N04-04-E3 (Lead (Pb)-free)

(Ω)I

= 10 V

GS

SDG

(A)

D

110

a

FEATURES

• TrenchFET® Power MOSFET

• 175 °C Junction Temperature

D

G

S

N-Channel MOSFET

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

b

Operating Junction and Storage Temperature Range

= 25 °C

T

C

= 125 °C

T

C

L = 0.1 mH

TC = 25 °C

= 25 °C

T

A

d

V

DS

V

GS

I

D

I

DM

I

AR

E

AR

P

D

, T

T

J

stg

40

20

a

110

a

107

350

60

180 mJ

c

250

3.75

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient

(PCB Mount)

d

Junction-to-Case

Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72077 S-80108-Rev. E, 21-Jan-08

R

thJA

thJC

40

0.6

°C/W

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1

SUM110N04-04

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

c

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

t

d(on)

t

r

t

d(off)

t

f

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

VDS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = 20 V

V

= 40 V, V

DS

V

= 40 V, V

DS

V

= 40 V, V

DS

≥ 5 V, V

DS

V

= 10 V, ID = 30 A

GS

V

= 10 V, ID = 30 A, TJ = 125 °C

GS

V

= 10 V, ID = 30 A, TJ = 175 °C

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

VDS = 15 V, ID = 30 A

VGS = 0 V, V

VDS = 30 V, V

V

DD

≅ 110 A, V

I

D

b

IF = 110 A, V

= 25 V, f = 1 MHz

DS

= 10 V, ID = 110 A

GS

= 30 V, RL = 0.47 Ω

= 10 V, Rg = 2.5 Ω

GEN

GS

IF = 110 A, di/dt = 100 A/µs

= 0 V

= 10 V

= 0 V

40

24

V

100 nA

1

50

µA

250

120 A

0.0028 0.0035

0.0055

Ω

0.006

30 S

6800

1110

pFOutput Capacitance

690

140 200

35

nC

55

20 35

115 175

75 115

ns

85 130

110

350

A

1.1 1.4 V

50 80 ns

23A

0.05 0.12 µC

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 72077

S-80108-Rev. E, 21-Jan-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SUM110N04-04

Vishay Siliconix

250

VGS = 10 thru 7 V

200

6 V

150

100

- Drain Current (A)I

D

50

4 V

0

0246810

VDS - Drain-to-Source Voltage (V)

5 V

Output Characteristics

250

TC = - 55 °C

200

150

125 °C

25 °C

250

200

150

100

- Drain Current (A)I

D

50

0

01234567

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

25 °C

- 55 °C

Transfer Characteristics

0.005

0.004

0.003

VGS = 10 V

100

- Transconductance (S)g

fs

50

0

0 153045607590

- Drain Current (A)

I

D

Transconductance

10000

8000

6000

4000

C - Capacitance (pF)

2000

C

rss

0

0 8 16 24 32 40

C

oss

VDS - Drain-to-Source Voltage (V)

C

iss

Capacitance

0.002

- On-Resistance (Ω)r

DS(on)

0.001

0.000

20

16

12

- Gate-to-Source Voltage (V)

GS

V

0 20 40 60 80 100 120

ID - Drain Current (A)

On-Resistance vs. Drain Current

VDS = 30 V I

= 85 A

D

8

4

0

0 50 100 150 200 250

Qg - Total Gate Charge (nC)

Gate Charge

Document Number: 72077 S-80108-Rev. E, 21-Jan-08

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3

SUM110N04-04

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.0

1.6

1.2

- On-Resistance (Normalized)

0.8

DS(on)

r

0.4

0.0

- 50 - 25 0 25 50 75 100 125 150 175

1000

100

(A)I

10

Dav

V

= 10 V

GS

= 30 A

I

D

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

IAV (A) at T

= 25 °C

A

- Source Current (A)I

S

(V)V

(BR)DSS

100

T

= 150 °C

10

1

0

J

T

= 25 °C

J

0.3 0.6 0.9 1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

56

52

48

ID = 1 mA

1

IAV (A) at T

0.1

0.00001 0.001 0.1 1

0.0001

= 150 °C

A

0.01

tin (s)

Avalanche Current vs. Time

44

40

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown

vs. Junction Temperature

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Document Number: 72077

S-80108-Rev. E, 21-Jan-08

THERMAL RATINGS

SUM110N04-04

Vishay Siliconix

120

100

80

60

40

- Drain Current (A)I

D

20

0

0 25 50 75 100 125 150 175

TC - Ambient Temperature (°C)

Maximum Avalanche and Drain Current

vs. Case Temperature

2

1

Duty Cycle = 0.5

0.2

1000

100

Limited

by r

*

10

- Drain Current (A)I

D

1

0.1

0.1 1 10 100

V

DS

minimum VGS at which r

* V

GS

DS(on)

TC = 25 °C

Single Pulse

- Drain-to-Source Voltage (V)

DS(on)

Safe Operating Area

10 µs

100 µs

1 ms 10 ms

100 ms DC

is specified

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-

10

0.1

Single Pulse

4

0.02

0.05

-

3

10

-

2

10

Square Wave Pulse Duration (s)

10

-

1

10

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72077.

Document Number: 72077

www.vishay.com

S-80108-Rev. E, 21-Jan-08

5

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Disclaimer

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