Datasheet sum110n04-03 Datasheet

N-Channel 40-V (D-S) 175 °C MOSFET

SUM110N04-03

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

(BR)DSS

40

DS(on)

0.0028 at V

(Ω)I

= 10 V

GS

(A)

D

110

a

FEATURES

• TrenchFET® Power MOSFET

• Package with Low Thermal Resistance

D

Available

RoHS*

COMPLIANT

TO-263

G

SDG

Top View

Ordering Information: SUM110N04-03

SUM110N04-03-E3 (Lead (Pb)-free)

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

b

Operating Junction and Storage Temperature Range

= 25 °C

T

C

= 125 °C

T

C

L = 0.1 mH

TC = 25 °C

T

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

AR

E

AR

P

D

T

, T

J

stg

40

± 20

a

110

a

110

440

70

211 mJ

c

437.5

3.75

W

- 55 to 175 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient

PCB Mount

d

Junction-to-Case (Drain)

Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material).

* PB containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 71745 S-80108-Rev. E, 21-Jan-08

R

thJA

R

thJC

40

0.4

°C/W

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SUM110N04-03

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

c

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

t

d(on)

t

r

t

d(off)

t

f

Source-Drain Diode Ratings and Characteristics TC = 25 °C

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

VDS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 40 V, V

DS

V

= 40 V, V

DS

V

= 40 V, V

DS

≥ 5 V, V

DS

V

= 10 V, ID = 30 A

GS

V

= 10 V, ID = 30 A, TJ = 125 °C

GS

V

= 10 V, ID = 30 A, TJ = 175 °C

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 175 °C

GS

VDS = 15 V, ID = 30 A

VGS = 0 V, V

VDS = 30 V, V

V

DD

≅ 110 A, V

I

D

b

IF = 85 A, V

= 25 V, f = 1 MHz

DS

= 10 V, ID = 110 A

GS

= 30 V, RL = 0.27 Ω

= 10 V, Rg = 2.5 Ω

GEN

GS

IF = 85 A, di/dt = 100 A/µs

= 0 V

= 10 V

= 0 V

40

2.5 4

100 nA

1

50

250

120 A

0.0023 0.0028

0.0045

0.0056

30 S

8250

1380

850

165 250

45

65

25 40

170 255

55 85

110 165

110

240

1.1 1.5 V

60 90 ns

3.0 5 A

0.09 0.22 µC

V

µA

Ω

pFOutput Capacitance

nC

ns

A

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 71745

S-80108-Rev. E, 21-Jan-08

SUM110N04-03

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

250

VGS = 10 thru 7 V

200

)A( tnerruC niarD -I

150

100

D

50

0

02468 10

VDS - Drain-to-Source Voltage (V)

Output Characteristics

300

250

)S( ecna

200

tcudno

150

c sna

100

r T -

sf

g

50

6 V

5 V

4 V

TC = - 55 °C

25 °C

125 °C

250

200

)A( tner

150

r uC

nia r

D

100

-

D

I

50

0

01234567

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

25 °C

Transfer Characteristics

0.006

0.005

(Ω) ecnatsi

0.004

seR-n

0.003

O

-r

)no(SD

0.002

0.001

VGS = 10 V

- 55 °C

0

020406080 100 120

12000

10000

)Fp( ecnaticapaC -

8000

6000

4000

C

2000

0

0 8 16 24 32 40

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- Drain Current (A)

I

D

Transconductance

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

0.000 020406080 100 120

I

- Drain Current (A)

D

On-Resistance vs. Drain Current

20

iss

)V( e

ga tlo

V

e c

ruo

S

-o t

-e ta

G

-

SG

V

VDS = 30 V

16

I

= 85 A

D

12

8

4

0

0 50 100 150 200 250 300

Qg - Total Gate Charge (nC)

Gate Charge

Document Number: 71745

S-80108-Rev. E, 21-Jan-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.1

1.8

V

GS

= 30 A

I

D

= 10 V

100

SUM110N04-03

Vishay Siliconix

1.5

1.2

– On-Resistance r

0.9

(Normalized)

0.6

DS(on)

0.3

0.0

- 50 - 25 0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

1000

100

IAV (A) at TA= 25 °C

(A)I

vaD

10

IAV (A) at TA= 150 °C

1

)A( tnerruC ecruoS -I

TJ= 150 °C

10

S

1

0

VSD - Source-to-Drain Voltage (V)

0.3 0.6 0.9 1.2

TJ= 25 °C

Source-Drain Diode Forward Voltage

56

52

(V) V

4

(BR)DSS

44

I D = 10 mA

8

0.1

0.00001 0.001 0.1 1

0.0001

Avalanche Current vs. Time

Document Number: 71745 S-80108-Rev. E, 21-Jan-08

tin (s)

0.01

40

- 50 - 25 0 25 50 75 100 125 150 175

T J - Junction Temperature (°C)

Drain Source Breakdown

vs. Junction Temperature

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THERMAL RATINGS

SUM110N04-03

Vishay Siliconix

120

100

)A( tnerruC niarD -I

80

60

40

D

20

0

0 25 50 75 100 125 150 175

TC - Ambient Temperature (°C)

Maximum Avalanche and Drain Current

vs. Case Temperature

2

1

Duty Cycle = 0.5

is

ec n

a d e p

mI l

am r

e h T

0.1

0.2

0.1

0.05

0.02

Single Pulse

n a

rT ev

i

tceffE

d ez

i

l a

m r

o N tne

1000

100

)A( tnerruC niarD -I

Limited

by r

10

D

1

0.1

0.1 1 10 100

* V

GS

TC = 25 °C

Single Pulse

VDS - Drain-to-Source Voltage (V) minimum VGS at which r

DS(on)

*

DS(on)

Safe Operating Area

is specified

10 µs

100 µs

1 ms 10 ms 100 ms DC

0.01

-4

10

-3

10

Square Wave Pulse Duration (s)

-2

10

-1

10

1

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71745.

Document Number: 71745

www.vishay.com

S-80108-Rev. E, 21-Jan-08

5

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

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Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1