Datasheet sum110n03-04p Datasheet

SUM110N03-04P

N-Channel 30-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V

(BR)DSS

(V) r

30

DS(on)

0.0042 @ VGS = 10 V 110

0.0065 @ VGS = 4.5 V 77

TO-263

(W) I

New Product

FEATURES

D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Optimized for Low-Side Synchronous Rectifier Operation

(A)

D

D New Package with Low Thermal Resistance
D 100% Rg Tested

APPLICATIONS

D DC/DC Converters
D Synchronous Rectifier

Vishay Siliconix

D

G

SDG

Top View

Ordering Information: SUM110N03-04P

SUM110N03-04P-E3 (Lead Free)

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (TJ = 175_C)

Pulsed Drain Current I

Avalanche Current I

Repetitive Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TC = 25_C

TC = 100_C

L = 0.1 mH E

TC = 25_C

TA = 25_C

c

P

I

DM

AR

DS

GS

D

AR

D

stg

30

"20

110

88

300

55

151 mJ

120

3.75

−55 to 175 _C

THERMAL RESISTANCE RATINGS

V

A

b

W

Parameter Symbol Limit Unit

Junction-to-Ambient PCB Mount

Junction-to-Case R

Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).

Document Number: 72366
S-32523—Rev. B, 08-Dec-03

c

R

thJA

thJC

40

1.25

_C/W

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1

SUM110N03-04P

V

g

DSS

m

DS

,

GS

,

D

VDD = 15 V, RL = 0.3 W

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New Product

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate-Resistance R

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

b

b

b

b

b

b

b

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

iss

oss

rss

g

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Source-Drain Diode Ratings and Characteristics (TC = 25_C)

VDS = 0 V, I

VDS = VGS, I

= 250 mA 30

D

= 250 mA 1 3.0

D

VDS = 0 V, VGS = "20 V

VDS = 30 V, VGS = 0 V 1

VDS = 30 V, VGS = 0 V, TJ = 125_C 50

VDS = 30 V, VGS = 0 V, TJ = 175_C 250

VDS w 5 V, VGS = 10 V 120 A

VGS = 10 V, ID = 20 A 0.0033 0.0042

VGS = 10 V, ID = 20 A, TJ = 125_C 0.0063

VGS = 10 V, ID = 20 A, TJ = 175_C 0.0076

VGS = 4.5 V, ID = 20 A

VDS = 15 V, ID = 20 A 20 S

VGS = 0 V, VDS = 25 V, f = 1 MHz

V

= 15 V, VGS = 4.5 V, ID = 50 A

DS

VDD = 15 V, RL = 0.3 W

ID ^ 50 A, V

= 10 V, Rg = 2.5 W

GEN

c

"100 nA

0.0052 0.0065

5100

860 pF

430

0.5 1.0 1.7 W

40 60

18

16

12 20

12 20

40 60

10 15

mA

W

nC

ns

Continuous Current I

Pulsed Current I

Forward Voltage

a

Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.

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2

S

SM

V

SD

rr

IF = 30 A, V

IF = 50 A, di/dt = 100 A/ms

GS

= 0 V

1.2 1.5 V

40 80 ns

100

300

A

Document Number: 72366

S-32523—Rev. B, 08-Dec-03

SUM110N03-04P

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

250

200

150

100

− Drain Current (A)I

D

50

0

0246810

180

150

120

90

60

− Transconductance (S)g

fs

30

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

4 V

− Drain Current (A)I

D

2 V

VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)

3 V

Transconductance On-Resistance vs. Drain Current

TC = −55_C

25_C

125_C

W )

− On-Resistance (r

DS(on)

Vishay Siliconix

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0.010

0.008

0.006

0.004

0.002

VGS = 4.5 V

TC = 125_C

25_C

VGS = 10 V

−55_C

0

0 20406080100

8000

7000

6000

5000

4000

3000

C − Capacitance (pF)

2000

1000

C

rss

0

0 6 12 18 24 30

V

DS

Document Number: 72366
S-32523—Rev. B, 08-Dec-03

0.000
0 20406080100

ID − Drain Current (A)

Capacitance Gate Charge

C

iss

C

oss

− Drain-to-Source Voltage (V)

− Gate-to-Source Voltage (V)

V

GS

10

VDS = 15 V

8

I

= 50 A

D

6

4

2

0

0 20406080100

− Drain Current (A)

I

D

Qg − Total Gate Charge (nC)

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SUM110N03-04P

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

1.8

V

= 10 V

GS

I

= 30 A

D

1.6

W)

1.4

1.2

(Normalized)

− On-Resistance (r

1.0

DS(on)

0.8

0.6

−50 −25 0 25 50 75 100 125 150 175

TJ − Junction Temperature (_C) VSD − Source-to-Drain Voltage (V)

Drain-Source Voltage Breakdown

40

vs. Junction Temperature

100

T

= 150_C

J

10

− Source Current (A)I

S

1

0

0.3 0.6 0.9 1.2 1.5

T

J

= 25_C

ID = 1.0 mA

38

36

(V)

34

(BR)DSS

V

32

30

−50 −25 0 25 50 75 100 125 150 175

TJ − Junction Temperature (_C)

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Document Number: 72366

S-32523—Rev. B, 08-Dec-03

SUM110N03-04P

THERMAL RATINGS

Maximum Avalanche Drain Current

vs. Case Temperature

120

100

80

60

40

− Drain Current (A)I

D

20

0

0 25 50 75 100 125 150 175

TC − Case Temperature (_C)

New Product

Vishay Siliconix

1000

− Drain Current (A)I

D

Safe Operating Area, Junction-to-Case

Limited by r

100

10

1

0.1

0.1 1 10 100

DS(on)

TC = 25_C

Single Pulse

VDS − Drain-to-Source Voltage (V)

10 ms

100 ms

1 ms

10 ms

dc, 100 ms

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

−4

10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

Normalized Thermal Transient Impedance, Junction-to-Case

−3

10

−2

10

Square Wave Pulse Duration (sec)

10

−1

110

Document Number: 72366
S-32523—Rev. B, 08-Dec-03

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Revision: 18-Jul-08 1